TW200719431A - Making method for semiconductor device and semiconductor device the same - Google Patents

Making method for semiconductor device and semiconductor device the same

Info

Publication number
TW200719431A
TW200719431A TW094139464A TW94139464A TW200719431A TW 200719431 A TW200719431 A TW 200719431A TW 094139464 A TW094139464 A TW 094139464A TW 94139464 A TW94139464 A TW 94139464A TW 200719431 A TW200719431 A TW 200719431A
Authority
TW
Taiwan
Prior art keywords
cutting
semiconductor device
semiconductor wafer
stealth
area
Prior art date
Application number
TW094139464A
Other languages
Chinese (zh)
Other versions
TWI381485B (en
Inventor
Yoshiyuki Abe
Tomoko Higashino
Chuichi Miyazaki
Original Assignee
Renesas Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Tech Corp filed Critical Renesas Tech Corp
Priority to TW94139464A priority Critical patent/TWI381485B/en
Publication of TW200719431A publication Critical patent/TW200719431A/en
Application granted granted Critical
Publication of TWI381485B publication Critical patent/TWI381485B/en

Links

Landscapes

  • Dicing (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

The topic of the invention is using stealth cutting for semiconductor wafer to reduce or prevent the bad shape in breaking process. The solving method in using stealth cutting comprising cutting a semiconductor wafer 1W so that disposing a test bonding pad 1LB or aligning target Am of cutting area CR at single side along the direction of the width of cutting area CR, utilizing laser forming a changing property area PR to irradiate the leaving position from the plane of test bonding pad 1LB or aligning target Am. According to this invention it can reduce or prevent the bad shape in the cutting process by using stealth cutting for cutting the semiconductor wafer.
TW94139464A 2005-11-10 2005-11-10 Semiconductor device manufacturing method and semiconductor device TWI381485B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW94139464A TWI381485B (en) 2005-11-10 2005-11-10 Semiconductor device manufacturing method and semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW94139464A TWI381485B (en) 2005-11-10 2005-11-10 Semiconductor device manufacturing method and semiconductor device

Publications (2)

Publication Number Publication Date
TW200719431A true TW200719431A (en) 2007-05-16
TWI381485B TWI381485B (en) 2013-01-01

Family

ID=50023208

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94139464A TWI381485B (en) 2005-11-10 2005-11-10 Semiconductor device manufacturing method and semiconductor device

Country Status (1)

Country Link
TW (1) TWI381485B (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI412073B (en) * 2008-05-08 2013-10-11 Creative Sensor Inc Wafer cutting method for contact image sensing unit
TWI477999B (en) * 2009-12-29 2015-03-21 Hynix Semiconductor Inc Method of fabricating a semiconductor device using spacer pattern technology
TWI488229B (en) * 2010-06-22 2015-06-11 應用材料股份有限公司 Wafer dicing using femtosecond-based laser and plasma etch
TWI677020B (en) * 2015-03-06 2019-11-11 日商迪思科股份有限公司 Optical element chip manufacturing method
CN111696923A (en) * 2019-03-14 2020-09-22 东芝存储器株式会社 Semiconductor device and method for manufacturing semiconductor device
CN113013097A (en) * 2019-12-18 2021-06-22 意法半导体股份有限公司 Method for cutting semiconductor substrate and corresponding semiconductor product
CN113097094A (en) * 2021-04-29 2021-07-09 云谷（固安）科技有限公司 Substrate to be cut, display panel and preparation method of display panel
TWI763913B (en) * 2017-08-30 2022-05-11 日商日亞化學工業股份有限公司 Method of manufacturing light-emitting element
US11817304B2 (en) 2019-12-30 2023-11-14 Micron Technology, Inc. Method of manufacturing microelectronic devices, related devices, systems, and apparatus

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004221215A (en) * 2003-01-14 2004-08-05 Renesas Technology Corp Semiconductor device

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI412073B (en) * 2008-05-08 2013-10-11 Creative Sensor Inc Wafer cutting method for contact image sensing unit
TWI477999B (en) * 2009-12-29 2015-03-21 Hynix Semiconductor Inc Method of fabricating a semiconductor device using spacer pattern technology
TWI488229B (en) * 2010-06-22 2015-06-11 應用材料股份有限公司 Wafer dicing using femtosecond-based laser and plasma etch
US9245802B2 (en) 2010-06-22 2016-01-26 Applied Materials, Inc. Wafer dicing using femtosecond-based laser and plasma etch
US10163713B2 (en) 2010-06-22 2018-12-25 Applied Materials, Inc. Wafer dicing using femtosecond-based laser and plasma etch
US10566238B2 (en) 2010-06-22 2020-02-18 Applied Materials, Inc. Wafer dicing using femtosecond-based laser and plasma etch
US10714390B2 (en) 2010-06-22 2020-07-14 Applied Materials, Inc. Wafer dicing using femtosecond-based laser and plasma etch
US11621194B2 (en) 2010-06-22 2023-04-04 Applied Materials, Inc. Wafer dicing using femtosecond-based laser and plasma etch
US10910271B2 (en) 2010-06-22 2021-02-02 Applied Materials, Inc. Wafer dicing using femtosecond-based laser and plasma etch
US12131952B2 (en) 2010-06-22 2024-10-29 Applied Materials, Inc. Wafer dicing using femtosecond-based laser and plasma etch
TWI677020B (en) * 2015-03-06 2019-11-11 日商迪思科股份有限公司 Optical element chip manufacturing method
TWI763913B (en) * 2017-08-30 2022-05-11 日商日亞化學工業股份有限公司 Method of manufacturing light-emitting element
CN111696923A (en) * 2019-03-14 2020-09-22 东芝存储器株式会社 Semiconductor device and method for manufacturing semiconductor device
TWI764006B (en) * 2019-03-14 2022-05-11 日商鎧俠股份有限公司 Semiconductor device and manufacturing method of semiconductor device
US11139208B2 (en) 2019-03-14 2021-10-05 Toshiba Memory Corporation Semiconductor device and method of manufacturing semiconductor device
CN111696923B (en) * 2019-03-14 2023-11-03 铠侠股份有限公司 Semiconductor device and method of manufacturing semiconductor device
CN113013097A (en) * 2019-12-18 2021-06-22 意法半导体股份有限公司 Method for cutting semiconductor substrate and corresponding semiconductor product
US11817304B2 (en) 2019-12-30 2023-11-14 Micron Technology, Inc. Method of manufacturing microelectronic devices, related devices, systems, and apparatus
CN113097094B (en) * 2021-04-29 2022-11-25 云谷（固安）科技有限公司 Substrate to be cut, display panel and preparation method of display panel
CN113097094A (en) * 2021-04-29 2021-07-09 云谷（固安）科技有限公司 Substrate to be cut, display panel and preparation method of display panel

Also Published As

Publication number Publication date
TWI381485B (en) 2013-01-01

Similar Documents

Publication Publication Date Title
WO2007024526A3 (en) Microelectronic devices and microelectronic support devices, and associated assemblies and methods
WO2011132929A3 (en) Glass sheet cutting device
TW200719431A (en) Making method for semiconductor device and semiconductor device the same
TW200710980A (en) Method for manufacturing semiconductor device
WO2009047990A1 (en) Fragile material substrate, laser scribe method for the fragile material substrate, and laser scribe apparatus
DE112010003803A5 (en) Method for welding a plastic housing
TW200802567A (en) Method of cutting and machining a silicon wafer
TW200607772A (en) Vertical crack forming method and vertical crack forming device in substrate
MY183229A (en) Method of welding overlapped portion, method of manufacturing overlap-welded member, overlap-welded member, and automotive part
SG145777A1 (en) Methods and apparatus for flip-chip-on-lead semiconductor package
TW200730544A (en) Process for preparing (meth)acrylate-based ABA triblock copolymers
WO2006083928A3 (en) Apparatus and method for modifying an object
DK1878547T3 (en) Edge of a cutting element for a cutting drum
WO2009017672A3 (en) Wire saw process
AR053270A1 (en) HYBRID CONTACT LENS SYSTEM AND ADJUSTMENT METHOD
DE112006000443B8 (en) Inner material and laser beam processing method for it
TW200720023A (en) A method of forming a stacked polishing pad using laser ablation
IN2012DN02446A (en)
TW200633809A (en) Method and device for separating products with a controlled cut edge, and separated product
SG161182A1 (en) Integrated circuit system employing an elevated drain
DE502005007431D1 (en) MULTI-REFLECTION DELAY RANGE FOR A LASER BEAM AND RESONATOR BZW. KURZPULSLASERVORRI
WO2007041595A3 (en) Iii-nitride semiconductor fabrication
DE602005026702D1 (en) LASER WELDING
MX2017002941A (en) Welding material and method for producing an assembly by means of a bonded connection.
TW200717585A (en) Manufacturing method for electronic substrate, manufacturing method for electro-optical device, and manufacturing method for electronic device

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees