TW200717659A - Method for controlling the step coverage of a ruthenium layer on a patterned substrate - Google Patents

Method for controlling the step coverage of a ruthenium layer on a patterned substrate

Info

Publication number
TW200717659A
TW200717659A TW095134801A TW95134801A TW200717659A TW 200717659 A TW200717659 A TW 200717659A TW 095134801 A TW095134801 A TW 095134801A TW 95134801 A TW95134801 A TW 95134801A TW 200717659 A TW200717659 A TW 200717659A
Authority
TW
Taiwan
Prior art keywords
step coverage
patterned substrate
controlling
ruthenium layer
substrate
Prior art date
Application number
TW095134801A
Other languages
English (en)
Other versions
TWI326115B (en
Inventor
Kenji Suzuki
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200717659A publication Critical patent/TW200717659A/zh
Application granted granted Critical
Publication of TWI326115B publication Critical patent/TWI326115B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/16—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal carbonyl compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76846—Layer combinations

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW095134801A 2005-09-28 2006-09-20 Method for controlling the step coverage of a ruthenium layer on a patterned substrate TWI326115B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/238,487 US7482269B2 (en) 2005-09-28 2005-09-28 Method for controlling the step coverage of a ruthenium layer on a patterned substrate

Publications (2)

Publication Number Publication Date
TW200717659A true TW200717659A (en) 2007-05-01
TWI326115B TWI326115B (en) 2010-06-11

Family

ID=37735294

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095134801A TWI326115B (en) 2005-09-28 2006-09-20 Method for controlling the step coverage of a ruthenium layer on a patterned substrate

Country Status (3)

Country Link
US (1) US7482269B2 (zh)
TW (1) TWI326115B (zh)
WO (1) WO2007040701A2 (zh)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7484315B2 (en) * 2004-11-29 2009-02-03 Tokyo Electron Limited Replaceable precursor tray for use in a multi-tray solid precursor delivery system
US7638002B2 (en) * 2004-11-29 2009-12-29 Tokyo Electron Limited Multi-tray film precursor evaporation system and thin film deposition system incorporating same
US7708835B2 (en) * 2004-11-29 2010-05-04 Tokyo Electron Limited Film precursor tray for use in a film precursor evaporation system and method of using
US7488512B2 (en) * 2004-11-29 2009-02-10 Tokyo Electron Limited Method for preparing solid precursor tray for use in solid precursor evaporation system
US7651570B2 (en) * 2005-03-31 2010-01-26 Tokyo Electron Limited Solid precursor vaporization system for use in chemical vapor deposition
US7846256B2 (en) * 2007-02-23 2010-12-07 Tokyo Electron Limited Ampule tray for and method of precursor surface area
KR100924865B1 (ko) * 2007-12-27 2009-11-02 주식회사 동부하이텍 반도체 소자의 금속배선 형성방법
US9063730B2 (en) 2010-12-20 2015-06-23 Intel Corporation Performing variation-aware profiling and dynamic core allocation for a many-core processor
US8399353B2 (en) * 2011-01-27 2013-03-19 Tokyo Electron Limited Methods of forming copper wiring and copper film, and film forming system
US8859422B2 (en) 2011-01-27 2014-10-14 Tokyo Electron Limited Method of forming copper wiring and method and system for forming copper film
US9904339B2 (en) 2014-09-10 2018-02-27 Intel Corporation Providing lifetime statistical information for a processor
US9704598B2 (en) 2014-12-27 2017-07-11 Intel Corporation Use of in-field programmable fuses in the PCH dye
JP6467239B2 (ja) 2015-02-16 2019-02-06 東京エレクトロン株式会社 ルテニウム膜の成膜方法、成膜装置及び半導体装置の製造方法
JP6419644B2 (ja) 2015-05-21 2018-11-07 東京エレクトロン株式会社 金属ナノドットの形成方法、金属ナノドット形成装置及び半導体装置の製造方法
US20170241014A1 (en) * 2016-02-19 2017-08-24 Tokyo Electron Limited Ruthenium metal deposition method for electrical connections
TWI821369B (zh) * 2018-08-23 2023-11-11 奧地利商蘭姆研究股份公司 用於防止高深寬比結構的黏滯效應及／或修補高深寬比結構的蒸氣輸送頭
SE2250842A1 (en) * 2022-07-04 2024-01-05 Canatu Oy A method for operating a chemical vapor deposition process

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6319832B1 (en) * 1999-02-19 2001-11-20 Micron Technology, Inc. Methods of making semiconductor devices
US6303809B1 (en) * 1999-12-10 2001-10-16 Yun Chi Organometallic ruthenium and osmium source reagents for chemical vapor deposition
US6440495B1 (en) * 2000-08-03 2002-08-27 Applied Materials, Inc. Chemical vapor deposition of ruthenium films for metal electrode applications
KR100727372B1 (ko) * 2001-09-12 2007-06-12 토소가부시키가이샤 루테늄착체, 그 제조방법 및 박막의 제조방법
US6713373B1 (en) * 2002-02-05 2004-03-30 Novellus Systems, Inc. Method for obtaining adhesion for device manufacture
US6924223B2 (en) * 2003-09-30 2005-08-02 Tokyo Electron Limited Method of forming a metal layer using an intermittent precursor gas flow process
US7107998B2 (en) * 2003-10-16 2006-09-19 Novellus Systems, Inc. Method for preventing and cleaning ruthenium-containing deposits in a CVD apparatus
US20050110142A1 (en) * 2003-11-26 2005-05-26 Lane Michael W. Diffusion barriers formed by low temperature deposition
US7285308B2 (en) * 2004-02-23 2007-10-23 Advanced Technology Materials, Inc. Chemical vapor deposition of high conductivity, adherent thin films of ruthenium

Also Published As

Publication number Publication date
US20070072414A1 (en) 2007-03-29
TWI326115B (en) 2010-06-11
WO2007040701A2 (en) 2007-04-12
US7482269B2 (en) 2009-01-27
WO2007040701A3 (en) 2007-06-07

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees