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Priority claimed from JP2005278464Aexternal-prioritypatent/JP2007088386A/en
Application filed by Advantest CorpfiledCriticalAdvantest Corp
Publication of TW200717188ApublicationCriticalpatent/TW200717188A/en
This invention provides an electron beam exposure system, which can suppress the occurrence of contamination within an electron beam exposure system and can suppress the occurrence of a beam drift, and a method for cleaning the same. In the electron beam exposure system, an electron beam emitted from an electron gun (101) is applied in a desired pattern onto a sample mounted on a wafer stage (124). The electron beam exposure system comprises means (129) for injecting a reducing gas into a column (100), in which the electron gun (101) and the wafer stage (124) are housed, and control means (209) for allowing the reducing gas to be continuously injected into the column (100) for a predetermined period of time. An organic contaminant is bonded to H generated from the reducing gas and is then evaporated by electron beam irradiation. A construction may be adopted in which means (128) for injecting ozone gas into the column (100) is provided and the control means (209) allows the reducing gas to be injected into the column (100) and further allows the injection of the ozone gas to be continued for a predetermined period of time.
TW095133048A2005-09-262006-09-07Electron beam exposure system, and method for cleaning electron beam exposure system
TW200717188A
(en)