TW200715611A - Light emitting device and method of manufacture - Google Patents
Light emitting device and method of manufactureInfo
- Publication number
- TW200715611A TW200715611A TW095125247A TW95125247A TW200715611A TW 200715611 A TW200715611 A TW 200715611A TW 095125247 A TW095125247 A TW 095125247A TW 95125247 A TW95125247 A TW 95125247A TW 200715611 A TW200715611 A TW 200715611A
- Authority
- TW
- Taiwan
- Prior art keywords
- light emitting
- emitting device
- manufacture
- emitting structure
- substrate
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 2
- 239000007767 bonding agent Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
- H01L33/465—Reflective coating, e.g. dielectric Bragg reflector with a resonant cavity structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2304/00—Special growth methods for semiconductor lasers
- H01S2304/04—MOCVD or MOVPE
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0215—Bonding to the substrate
- H01S5/0216—Bonding to the substrate using an intermediate compound, e.g. a glue or solder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0217—Removal of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
- H01S5/18388—Lenses
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
- Optical Couplings Of Light Guides (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/187,469 US20070019699A1 (en) | 2005-07-22 | 2005-07-22 | Light emitting device and method of manufacture |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200715611A true TW200715611A (en) | 2007-04-16 |
Family
ID=37023177
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095125247A TW200715611A (en) | 2005-07-22 | 2006-07-11 | Light emitting device and method of manufacture |
Country Status (6)
Country | Link |
---|---|
US (1) | US20070019699A1 (zh) |
EP (1) | EP1746665A3 (zh) |
JP (1) | JP2007036234A (zh) |
KR (1) | KR20070012255A (zh) |
CN (1) | CN1901241B (zh) |
TW (1) | TW200715611A (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102412356B (zh) * | 2010-09-23 | 2015-05-13 | 展晶科技(深圳)有限公司 | 外延基板 |
CN104134722A (zh) * | 2013-05-02 | 2014-11-05 | 展晶科技(深圳)有限公司 | 发光二极管制造方法 |
CN114552380A (zh) * | 2020-11-25 | 2022-05-27 | 上海禾赛科技有限公司 | 谐振腔、激光单元及芯片和激光器及形成方法、激光雷达 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH104240A (ja) * | 1996-06-17 | 1998-01-06 | Furukawa Electric Co Ltd:The | 半導体光素子、ウエハ及びその製造方法 |
JPH11154774A (ja) * | 1997-08-05 | 1999-06-08 | Canon Inc | 面発光半導体デバイスの製造方法、この方法によって製造された面発光半導体デバイス及びこのデバイスを用いた表示装置 |
US6794725B2 (en) * | 1999-12-21 | 2004-09-21 | Xerox Corporation | Amorphous silicon sensor with micro-spring interconnects for achieving high uniformity in integrated light-emitting sources |
DE10026254A1 (de) * | 2000-04-26 | 2001-11-08 | Osram Opto Semiconductors Gmbh | Lumineszenzdiodenchip mit einer auf GaN basierenden strahlungsemittierenden Epitaxieschichtenfolge |
US6888871B1 (en) * | 2000-07-12 | 2005-05-03 | Princeton Optronics, Inc. | VCSEL and VCSEL array having integrated microlenses for use in a semiconductor laser pumped solid state laser system |
US6562648B1 (en) * | 2000-08-23 | 2003-05-13 | Xerox Corporation | Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials |
US20020172459A1 (en) * | 2001-03-16 | 2002-11-21 | Bailey Timothy J. | Method and apparatus for coupling light into an optical waveguide |
US6515308B1 (en) * | 2001-12-21 | 2003-02-04 | Xerox Corporation | Nitride-based VCSEL or light emitting diode with p-n tunnel junction current injection |
TW567618B (en) * | 2002-07-15 | 2003-12-21 | Epistar Corp | Light emitting diode with adhesive reflection layer and manufacturing method thereof |
KR100506730B1 (ko) * | 2002-12-10 | 2005-08-08 | 삼성전기주식회사 | 발광 다이오드의 제조방법 |
TW579610B (en) * | 2003-01-30 | 2004-03-11 | Epistar Corp | Nitride light-emitting device having adhered reflective layer |
US7008858B2 (en) * | 2003-07-04 | 2006-03-07 | Epistar Corporation | Light emitting diode having an adhesive layer and a reflective layer and manufacturing method thereof |
JP4116587B2 (ja) * | 2004-04-13 | 2008-07-09 | 浜松ホトニクス株式会社 | 半導体発光素子及びその製造方法 |
US7332365B2 (en) * | 2004-05-18 | 2008-02-19 | Cree, Inc. | Method for fabricating group-III nitride devices and devices fabricated using method |
US6956246B1 (en) * | 2004-06-03 | 2005-10-18 | Lumileds Lighting U.S., Llc | Resonant cavity III-nitride light emitting devices fabricated by growth substrate removal |
JP4999696B2 (ja) * | 2004-10-22 | 2012-08-15 | ソウル オプト デバイス カンパニー リミテッド | GaN系化合物半導体発光素子及びその製造方法 |
-
2005
- 2005-07-22 US US11/187,469 patent/US20070019699A1/en not_active Abandoned
-
2006
- 2006-07-11 TW TW095125247A patent/TW200715611A/zh unknown
- 2006-07-12 EP EP06014473A patent/EP1746665A3/en not_active Withdrawn
- 2006-07-20 CN CN2006100994652A patent/CN1901241B/zh not_active Expired - Fee Related
- 2006-07-21 KR KR1020060068429A patent/KR20070012255A/ko not_active Application Discontinuation
- 2006-07-21 JP JP2006199256A patent/JP2007036234A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP1746665A2 (en) | 2007-01-24 |
EP1746665A3 (en) | 2008-05-28 |
US20070019699A1 (en) | 2007-01-25 |
CN1901241A (zh) | 2007-01-24 |
JP2007036234A (ja) | 2007-02-08 |
KR20070012255A (ko) | 2007-01-25 |
CN1901241B (zh) | 2012-07-11 |
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