TW200715370A - Etchant and method for forming bumps - Google Patents
Etchant and method for forming bumpsInfo
- Publication number
- TW200715370A TW200715370A TW094135717A TW94135717A TW200715370A TW 200715370 A TW200715370 A TW 200715370A TW 094135717 A TW094135717 A TW 094135717A TW 94135717 A TW94135717 A TW 94135717A TW 200715370 A TW200715370 A TW 200715370A
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- etchant
- utilized
- wetting
- patterned photoresist
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 2
- 229920002120 photoresistant polymer Polymers 0.000 abstract 3
- 238000009736 wetting Methods 0.000 abstract 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 abstract 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 abstract 2
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 abstract 2
- 230000004888 barrier function Effects 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910021578 Iron(III) chloride Inorganic materials 0.000 abstract 1
- 239000012425 OXONE® Substances 0.000 abstract 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 abstract 1
- 229910001870 ammonium persulfate Inorganic materials 0.000 abstract 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- HJKYXKSLRZKNSI-UHFFFAOYSA-I pentapotassium;hydrogen sulfate;oxido sulfate;sulfuric acid Chemical compound [K+].[K+].[K+].[K+].[K+].OS([O-])(=O)=O.[O-]S([O-])(=O)=O.OS(=O)(=O)O[O-].OS(=O)(=O)O[O-] HJKYXKSLRZKNSI-UHFFFAOYSA-I 0.000 abstract 1
Classifications
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
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- H—ELECTRICITY
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- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/014—Solder alloys
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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- Weting (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW094135717A TWI273639B (en) | 2005-10-13 | 2005-10-13 | Etchant and method for forming bumps |
US11/462,720 US7402510B2 (en) | 2005-10-13 | 2006-08-07 | Etchant and method for forming bumps |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW094135717A TWI273639B (en) | 2005-10-13 | 2005-10-13 | Etchant and method for forming bumps |
Publications (2)
Publication Number | Publication Date |
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TWI273639B TWI273639B (en) | 2007-02-11 |
TW200715370A true TW200715370A (en) | 2007-04-16 |
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TW094135717A TWI273639B (en) | 2005-10-13 | 2005-10-13 | Etchant and method for forming bumps |
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US (1) | US7402510B2 (zh) |
TW (1) | TWI273639B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110233115A (zh) * | 2019-05-29 | 2019-09-13 | 宁波芯健半导体有限公司 | 一种晶圆级芯片封装方法及封装结构 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI401775B (zh) * | 2008-07-24 | 2013-07-11 | Chipmos Technologies Inc | 具基板支柱之封裝結構及其封裝方法 |
US20120009777A1 (en) * | 2010-07-07 | 2012-01-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | UBM Etching Methods |
US9082832B2 (en) * | 2011-09-21 | 2015-07-14 | Stats Chippac, Ltd. | Semiconductor device and method of forming protection and support structure for conductive interconnect structure |
US9484259B2 (en) * | 2011-09-21 | 2016-11-01 | STATS ChipPAC Pte. Ltd. | Semiconductor device and method of forming protection and support structure for conductive interconnect structure |
US9029268B2 (en) * | 2012-11-21 | 2015-05-12 | Dynaloy, Llc | Process for etching metals |
US10522501B2 (en) | 2017-11-17 | 2019-12-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor structure and method of forming the same |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
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TWI239578B (en) * | 2002-02-21 | 2005-09-11 | Advanced Semiconductor Eng | Manufacturing process of bump |
US6780751B2 (en) * | 2002-10-09 | 2004-08-24 | Freescale Semiconductor, Inc. | Method for eliminating voiding in plated solder |
-
2005
- 2005-10-13 TW TW094135717A patent/TWI273639B/zh active
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2006
- 2006-08-07 US US11/462,720 patent/US7402510B2/en active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110233115A (zh) * | 2019-05-29 | 2019-09-13 | 宁波芯健半导体有限公司 | 一种晶圆级芯片封装方法及封装结构 |
Also Published As
Publication number | Publication date |
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TWI273639B (en) | 2007-02-11 |
US20070087546A1 (en) | 2007-04-19 |
US7402510B2 (en) | 2008-07-22 |
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