TW200713647A - Magnetic tunnel junction sensor - Google Patents

Magnetic tunnel junction sensor

Info

Publication number
TW200713647A
TW200713647A TW095127621A TW95127621A TW200713647A TW 200713647 A TW200713647 A TW 200713647A TW 095127621 A TW095127621 A TW 095127621A TW 95127621 A TW95127621 A TW 95127621A TW 200713647 A TW200713647 A TW 200713647A
Authority
TW
Taiwan
Prior art keywords
magnetic
mtj
electrode
magnetic field
tunnel junction
Prior art date
Application number
TW095127621A
Other languages
English (en)
Inventor
Young-Sir Chung
Robert W Baird
Bradley N Engel
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Publication of TW200713647A publication Critical patent/TW200713647A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/933—Spintronics or quantum computing
    • Y10S977/935—Spin dependent tunnel, SDT, junction, e.g. tunneling magnetoresistance, TMR
TW095127621A 2005-07-29 2006-07-28 Magnetic tunnel junction sensor TW200713647A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/192,569 US7541804B2 (en) 2005-07-29 2005-07-29 Magnetic tunnel junction sensor

Publications (1)

Publication Number Publication Date
TW200713647A true TW200713647A (en) 2007-04-01

Family

ID=37694039

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095127621A TW200713647A (en) 2005-07-29 2006-07-28 Magnetic tunnel junction sensor

Country Status (5)

Country Link
US (2) US7541804B2 (zh)
JP (1) JP2009503858A (zh)
KR (1) KR20080033957A (zh)
TW (1) TW200713647A (zh)
WO (1) WO2007016011A2 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111863865A (zh) * 2019-04-24 2020-10-30 上海磁宇信息科技有限公司 一种赝磁性隧道结单元

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US7547480B2 (en) * 2005-10-28 2009-06-16 Everspin Technologies, Inc. Magnetic tunnel junction pressure sensors and methods
US7768083B2 (en) 2006-01-20 2010-08-03 Allegro Microsystems, Inc. Arrangements for an integrated sensor
US7483295B2 (en) * 2007-04-23 2009-01-27 Mag Ic Technologies, Inc. MTJ sensor including domain stable free layer
US8242776B2 (en) * 2008-03-26 2012-08-14 Everspin Technologies, Inc. Magnetic sensor design for suppression of barkhausen noise
US7965077B2 (en) 2008-05-08 2011-06-21 Everspin Technologies, Inc. Two-axis magnetic field sensor with multiple pinning directions
GB2467777B (en) * 2009-02-13 2011-01-12 Wolfson Microelectronics Plc MEMS device and process
US8482968B2 (en) * 2010-11-13 2013-07-09 International Business Machines Corporation Non-volatile magnetic tunnel junction transistor
US9395410B2 (en) * 2011-06-06 2016-07-19 Iii Holdings 1, Llc Integrated circuit with sensing unit and method for using the same
US8767446B2 (en) 2011-10-12 2014-07-01 International Business Machines Corporation Multi-bit spin-momentum-transfer magnetoresistence random access memory with single magnetic-tunnel-junction stack
US8975891B2 (en) 2011-11-04 2015-03-10 Honeywell International Inc. Apparatus and method for determining in-plane magnetic field components of a magnetic field using a single magnetoresistive sensor
WO2014142956A1 (en) * 2013-03-15 2014-09-18 Intel Corporation Logic chip including embedded magnetic tunnel junctions
DE102013211626A1 (de) * 2013-06-20 2014-12-24 Robert Bosch Gmbh Sensor und Verfahren zum Erfassen einer Lage einer Wirkfläche des Sensors
JP6105817B2 (ja) * 2013-11-01 2017-03-29 中国科学院物理研究所 温度センサのためのナノ磁性多層膜とその製造方法
US9543067B2 (en) 2013-12-20 2017-01-10 Nxp Usa, Inc. Magnetic pre-conditioning of magnetic sensors
DE102014109701A1 (de) * 2014-07-10 2016-01-14 Epcos Ag Sensor
EP2966453B1 (en) * 2014-07-11 2018-10-31 Crocus Technology MLU based accelerometer using a magnetic tunnel junction
US9673893B2 (en) * 2015-03-20 2017-06-06 Oracle International Corporation Safety-enhanced laser array
US10082431B2 (en) 2015-07-17 2018-09-25 Honeywell International Inc. System and methods for magnetic tunnel junction pressure sensors
US10935612B2 (en) 2018-08-20 2021-03-02 Allegro Microsystems, Llc Current sensor having multiple sensitivity ranges
US10830841B1 (en) 2019-06-19 2020-11-10 International Business Machines Corporation Magnetic tunnel junction performance monitoring based on magnetic field coupling
US11567108B2 (en) 2021-03-31 2023-01-31 Allegro Microsystems, Llc Multi-gain channels for multi-range sensor

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111863865A (zh) * 2019-04-24 2020-10-30 上海磁宇信息科技有限公司 一种赝磁性隧道结单元
CN111863865B (zh) * 2019-04-24 2024-04-12 上海磁宇信息科技有限公司 一种赝磁性隧道结单元

Also Published As

Publication number Publication date
US7602177B2 (en) 2009-10-13
KR20080033957A (ko) 2008-04-17
JP2009503858A (ja) 2009-01-29
US20070025027A1 (en) 2007-02-01
WO2007016011A3 (en) 2008-09-12
US20070159735A1 (en) 2007-07-12
WO2007016011A2 (en) 2007-02-08
US7541804B2 (en) 2009-06-02

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