TW200713398A - Semiconductor device having nickel silicide and method of fabricating nickel silicide - Google Patents
Semiconductor device having nickel silicide and method of fabricating nickel silicideInfo
- Publication number
- TW200713398A TW200713398A TW094130755A TW94130755A TW200713398A TW 200713398 A TW200713398 A TW 200713398A TW 094130755 A TW094130755 A TW 094130755A TW 94130755 A TW94130755 A TW 94130755A TW 200713398 A TW200713398 A TW 200713398A
- Authority
- TW
- Taiwan
- Prior art keywords
- nickel silicide
- semiconductor device
- fabricating
- nickel
- rapid thermal
- Prior art date
Links
Abstract
A semiconductor device having nickel silicide and a method for fabricating nickel silicide. A semiconductor substrate having a plurality of doped regions is provided. Subsequently, a nickel layer is formed on the semiconductor substrate, and a first rapid thermal process (RTF) is performed to react the nickel layer with the doped regions disposed thereunder. Thereafter, the unreacted nickel layer is removed, and a second rapid thermal process is performed to form a semiconductor device having nickel silicide. The second rapid thermal process is a spike anneal process whose process temperature is between 400 to 600 DEG C.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW94130755A TWI276145B (en) | 2005-09-07 | 2005-09-07 | Semiconductor device having nickel silicide and method of fabricating nickel silicide |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW94130755A TWI276145B (en) | 2005-09-07 | 2005-09-07 | Semiconductor device having nickel silicide and method of fabricating nickel silicide |
Publications (2)
Publication Number | Publication Date |
---|---|
TWI276145B TWI276145B (en) | 2007-03-11 |
TW200713398A true TW200713398A (en) | 2007-04-01 |
Family
ID=38646167
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW94130755A TWI276145B (en) | 2005-09-07 | 2005-09-07 | Semiconductor device having nickel silicide and method of fabricating nickel silicide |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI276145B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI696270B (en) * | 2019-04-15 | 2020-06-11 | 力晶積成電子製造股份有限公司 | Memory structure and manufacturing method thereof |
-
2005
- 2005-09-07 TW TW94130755A patent/TWI276145B/en active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI696270B (en) * | 2019-04-15 | 2020-06-11 | 力晶積成電子製造股份有限公司 | Memory structure and manufacturing method thereof |
Also Published As
Publication number | Publication date |
---|---|
TWI276145B (en) | 2007-03-11 |
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