TW200713398A - Semiconductor device having nickel silicide and method of fabricating nickel silicide - Google Patents

Semiconductor device having nickel silicide and method of fabricating nickel silicide

Info

Publication number
TW200713398A
TW200713398A TW094130755A TW94130755A TW200713398A TW 200713398 A TW200713398 A TW 200713398A TW 094130755 A TW094130755 A TW 094130755A TW 94130755 A TW94130755 A TW 94130755A TW 200713398 A TW200713398 A TW 200713398A
Authority
TW
Taiwan
Prior art keywords
nickel silicide
semiconductor device
fabricating
nickel
rapid thermal
Prior art date
Application number
TW094130755A
Other languages
Chinese (zh)
Other versions
TWI276145B (en
Inventor
Yi-Wei Chen
Chao-Ching Hsieh
Yi-Yiing Chiang
Tzung-Yu Hung
Yu-Lan Chang
Po Chao Tsao
Chang Chi Huang
Ming Tsung Chen
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW94130755A priority Critical patent/TWI276145B/en
Application granted granted Critical
Publication of TWI276145B publication Critical patent/TWI276145B/en
Publication of TW200713398A publication Critical patent/TW200713398A/en

Links

Abstract

A semiconductor device having nickel silicide and a method for fabricating nickel silicide. A semiconductor substrate having a plurality of doped regions is provided. Subsequently, a nickel layer is formed on the semiconductor substrate, and a first rapid thermal process (RTF) is performed to react the nickel layer with the doped regions disposed thereunder. Thereafter, the unreacted nickel layer is removed, and a second rapid thermal process is performed to form a semiconductor device having nickel silicide. The second rapid thermal process is a spike anneal process whose process temperature is between 400 to 600 DEG C.
TW94130755A 2005-09-07 2005-09-07 Semiconductor device having nickel silicide and method of fabricating nickel silicide TWI276145B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW94130755A TWI276145B (en) 2005-09-07 2005-09-07 Semiconductor device having nickel silicide and method of fabricating nickel silicide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW94130755A TWI276145B (en) 2005-09-07 2005-09-07 Semiconductor device having nickel silicide and method of fabricating nickel silicide

Publications (2)

Publication Number Publication Date
TWI276145B TWI276145B (en) 2007-03-11
TW200713398A true TW200713398A (en) 2007-04-01

Family

ID=38646167

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94130755A TWI276145B (en) 2005-09-07 2005-09-07 Semiconductor device having nickel silicide and method of fabricating nickel silicide

Country Status (1)

Country Link
TW (1) TWI276145B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI696270B (en) * 2019-04-15 2020-06-11 力晶積成電子製造股份有限公司 Memory structure and manufacturing method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI696270B (en) * 2019-04-15 2020-06-11 力晶積成電子製造股份有限公司 Memory structure and manufacturing method thereof

Also Published As

Publication number Publication date
TWI276145B (en) 2007-03-11

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