TW200710582A - Structure and method for improving photoresist pattern adhesion - Google Patents
Structure and method for improving photoresist pattern adhesionInfo
- Publication number
- TW200710582A TW200710582A TW095128204A TW95128204A TW200710582A TW 200710582 A TW200710582 A TW 200710582A TW 095128204 A TW095128204 A TW 095128204A TW 95128204 A TW95128204 A TW 95128204A TW 200710582 A TW200710582 A TW 200710582A
- Authority
- TW
- Taiwan
- Prior art keywords
- photoresist pattern
- pattern adhesion
- improving photoresist
- improving
- adhesion
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
Landscapes
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US70684505P | 2005-08-09 | 2005-08-09 | |
US11/427,721 US8137895B2 (en) | 2005-08-09 | 2006-06-29 | Structure and method for improving photoresist pattern adhesion |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200710582A true TW200710582A (en) | 2007-03-16 |
TWI439812B TWI439812B (zh) | 2014-06-01 |
Family
ID=37742911
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095128204A TWI439812B (zh) | 2005-08-09 | 2006-08-01 | 改善光阻圖案附著力的聚合物化學結構 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8137895B2 (zh) |
TW (1) | TWI439812B (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11351509B2 (en) * | 2013-12-06 | 2022-06-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Filter with seal treatment |
US10515822B2 (en) * | 2016-06-20 | 2019-12-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for preventing bottom layer wrinkling in a semiconductor device |
US11605538B2 (en) | 2018-10-31 | 2023-03-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Protective composition and method of forming photoresist pattern |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3895946A (en) * | 1971-10-18 | 1975-07-22 | Fuji Photo Film Co Ltd | Process for producing a lithographic printing plate |
US4362809A (en) * | 1981-03-30 | 1982-12-07 | Hewlett-Packard Company | Multilayer photoresist process utilizing an absorbant dye |
US4370405A (en) * | 1981-03-30 | 1983-01-25 | Hewlett-Packard Company | Multilayer photoresist process utilizing an absorbant dye |
US4910122A (en) * | 1982-09-30 | 1990-03-20 | Brewer Science, Inc. | Anti-reflective coating |
EP0537524A1 (en) * | 1991-10-17 | 1993-04-21 | Shipley Company Inc. | Radiation sensitive compositions and methods |
US6165697A (en) * | 1991-11-15 | 2000-12-26 | Shipley Company, L.L.C. | Antihalation compositions |
DE4323289A1 (de) * | 1993-07-12 | 1995-01-19 | Siemens Ag | Strahlungsempfindliche Lackzusammensetzung |
JP2877011B2 (ja) * | 1994-12-20 | 1999-03-31 | 日本電気株式会社 | ベアチップテストキャリア |
US5886102A (en) * | 1996-06-11 | 1999-03-23 | Shipley Company, L.L.C. | Antireflective coating compositions |
US5939236A (en) * | 1997-02-07 | 1999-08-17 | Shipley Company, L.L.C. | Antireflective coating compositions comprising photoacid generators |
TWI263861B (en) * | 1999-03-26 | 2006-10-11 | Shinetsu Chemical Co | Resist material and pattern forming method |
US6323310B1 (en) * | 2000-04-19 | 2001-11-27 | Brewer Science, Inc. | Anti-reflective coating compositions comprising polymerized aminoplasts |
KR100828313B1 (ko) * | 2000-09-19 | 2008-05-08 | 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨 | 반사방지 조성물 |
US6495305B1 (en) * | 2000-10-04 | 2002-12-17 | Tomoyuki Enomoto | Halogenated anti-reflective coatings |
US6534235B1 (en) * | 2000-10-31 | 2003-03-18 | Kansai Research Institute, Inc. | Photosensitive resin composition and process for forming pattern |
TW576859B (en) * | 2001-05-11 | 2004-02-21 | Shipley Co Llc | Antireflective coating compositions |
US7115532B2 (en) * | 2003-09-05 | 2006-10-03 | Micron Technolgoy, Inc. | Methods of forming patterned photoresist layers over semiconductor substrates |
US7276324B2 (en) * | 2003-11-14 | 2007-10-02 | Shin-Etsu Chemical Co., Ltd. | Nitrogen-containing organic compound, resist composition and patterning process |
US20060248665A1 (en) * | 2005-05-06 | 2006-11-09 | Pluyter Johan G L | Encapsulated fragrance materials and methods for making same |
-
2006
- 2006-06-29 US US11/427,721 patent/US8137895B2/en not_active Expired - Fee Related
- 2006-08-01 TW TW095128204A patent/TWI439812B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US20070037089A1 (en) | 2007-02-15 |
US8137895B2 (en) | 2012-03-20 |
TWI439812B (zh) | 2014-06-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |