TW200707511A - Substrate Processing method and substrate processing apparatus - Google Patents

Substrate Processing method and substrate processing apparatus

Info

Publication number
TW200707511A
TW200707511A TW095122478A TW95122478A TW200707511A TW 200707511 A TW200707511 A TW 200707511A TW 095122478 A TW095122478 A TW 095122478A TW 95122478 A TW95122478 A TW 95122478A TW 200707511 A TW200707511 A TW 200707511A
Authority
TW
Taiwan
Prior art keywords
substrate
substrate processing
fluid
process liquid
processing apparatus
Prior art date
Application number
TW095122478A
Other languages
English (en)
Chinese (zh)
Other versions
TWI311336B (fr
Inventor
Kenji Sekiguchi
Noritaka Uchida
Satoru Tanaka
Hiroki Ohno
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200707511A publication Critical patent/TW200707511A/zh
Application granted granted Critical
Publication of TWI311336B publication Critical patent/TWI311336B/zh

Links

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
TW095122478A 2005-06-23 2006-06-22 Substrate Processing method and substrate processing apparatus TW200707511A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005183549 2005-06-23

Publications (2)

Publication Number Publication Date
TW200707511A true TW200707511A (en) 2007-02-16
TWI311336B TWI311336B (fr) 2009-06-21

Family

ID=45072406

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095122478A TW200707511A (en) 2005-06-23 2006-06-22 Substrate Processing method and substrate processing apparatus

Country Status (1)

Country Link
TW (1) TW200707511A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI409876B (zh) * 2007-02-23 2013-09-21 Sekisui Chemical Co Ltd Etching method and device
TWI607487B (zh) * 2015-06-10 2017-12-01 思可林集團股份有限公司 基板處理方法及基板處理裝置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI409876B (zh) * 2007-02-23 2013-09-21 Sekisui Chemical Co Ltd Etching method and device
TWI607487B (zh) * 2015-06-10 2017-12-01 思可林集團股份有限公司 基板處理方法及基板處理裝置

Also Published As

Publication number Publication date
TWI311336B (fr) 2009-06-21

Similar Documents

Publication Publication Date Title
TW200627537A (en) Substrate processing method and substrate processing apparatus
SG171605A1 (en) Method for the wet-chemical treatment of a semiconductor wafer
TW200640584A (en) Method and apparatus for cleaning and drying substrates
TW200802581A (en) Substrate processing method and substrate processing apparatus
TW200507979A (en) Substrate processing apparatus, substrate processing method, and substrate holding apparatus
WO2008084658A1 (fr) Procédé de fabrication d'un dispositif à semi-conducteur, appareil de fabrication de semi-conducteur et support de stockage
KR930011129A (ko) 기판처리방법 및 처리장치
US20140230860A1 (en) Methods and apparatus for wetting pretreatment for through resist metal plating
TWI263676B (en) Compositions for chemically treating a substrate using foam technology
MY143956A (en) Controls of ambient environment during wafer drying using proximity head
MY150143A (en) Method for removing material from semiconductor wafer and apparatus for performing the same
SG164385A1 (en) Composition useful for removal of post-etch photoresist and bottom anti- reflection coatings
WO2006107569A3 (fr) Procedes de rinçage de substrats microelectroniques a l'aide d'un fluide de rinçage froid dans un environnement gazeux contenant une substance d'amelioration de sechage
NO20083285L (no) Fremgangsmate og anordning for presisjonsbearbeiding av substrater ved hjelp av laser anordnet i en vaeskestromning, og anvendelse derav
DE69914917D1 (de) Verfahren und gerät zur behandlung eines werkstückes, wie ein halbleiterwafer
EP1748475A3 (fr) Procédé et appareil de gravure
WO2007035071A8 (fr) Dispositif et procédé de traitement de substrat
CN1840248A (zh) 洗涤方法及洗涤装置
TW200700812A (en) Coating apparatus and operating method thereof
CN104183524A (zh) 一种晶圆边缘的刻蚀装置
JP6449097B2 (ja) 基板処理方法及び基板処理装置並びに基板処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体
TWI457993B (zh) 清潔表面的方法
WO2009031270A1 (fr) Procédé de récupération de tranche et appareil de récupération de tranche
WO2005050705A3 (fr) Composants en carbure de silicium d'appareils de traitement de substrats a semi-conducteurs traites pour eliminer le carbone libre
TW201939572A (zh) 具有可控制噴束尺寸之處理噴霧的微電子處理系統