TW200705096A - Photosensitive composition, pattern forming method using the photosensitive composition and compound for use in the photosensitive composition - Google Patents

Photosensitive composition, pattern forming method using the photosensitive composition and compound for use in the photosensitive composition

Info

Publication number
TW200705096A
TW200705096A TW095121819A TW95121819A TW200705096A TW 200705096 A TW200705096 A TW 200705096A TW 095121819 A TW095121819 A TW 095121819A TW 95121819 A TW95121819 A TW 95121819A TW 200705096 A TW200705096 A TW 200705096A
Authority
TW
Taiwan
Prior art keywords
photosensitive composition
compound
forming method
pattern forming
specific structure
Prior art date
Application number
TW095121819A
Other languages
English (en)
Inventor
Kenji Wada
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Publication of TW200705096A publication Critical patent/TW200705096A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
    • C07C309/78—Halides of sulfonic acids
    • C07C309/79—Halides of sulfonic acids having halosulfonyl groups bound to acyclic carbon atoms
    • C07C309/80—Halides of sulfonic acids having halosulfonyl groups bound to acyclic carbon atoms of a saturated carbon skeleton
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C311/00—Amides of sulfonic acids, i.e. compounds having singly-bound oxygen atoms of sulfo groups replaced by nitrogen atoms, not being part of nitro or nitroso groups
    • C07C311/48—Amides of sulfonic acids, i.e. compounds having singly-bound oxygen atoms of sulfo groups replaced by nitrogen atoms, not being part of nitro or nitroso groups having nitrogen atoms of sulfonamide groups further bound to another hetero atom
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
    • C07C381/12—Sulfonium compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/122—Sulfur compound containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/124—Carbonyl compound containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/126—Halogen compound containing

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW095121819A 2005-06-21 2006-06-19 Photosensitive composition, pattern forming method using the photosensitive composition and compound for use in the photosensitive composition TW200705096A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005180980A JP2007003619A (ja) 2005-06-21 2005-06-21 感光性組成物、該感光性組成物を用いたパターン形成方法及び該感光性組成物に用いる化合物

Publications (1)

Publication Number Publication Date
TW200705096A true TW200705096A (en) 2007-02-01

Family

ID=37309670

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095121819A TW200705096A (en) 2005-06-21 2006-06-19 Photosensitive composition, pattern forming method using the photosensitive composition and compound for use in the photosensitive composition

Country Status (5)

Country Link
US (1) US7695891B2 (zh)
EP (1) EP1736825A3 (zh)
JP (1) JP2007003619A (zh)
KR (1) KR20060133922A (zh)
TW (1) TW200705096A (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI416270B (zh) * 2007-08-22 2013-11-21 Shinetsu Chemical Co 圖型之形成方法及用於其之圖型表面塗層材料

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4682064B2 (ja) * 2006-03-09 2011-05-11 富士フイルム株式会社 感光性組成物、該組成物を用いたパターン形成方法及び該組成物に用いる化合物
JP2007293250A (ja) * 2006-03-27 2007-11-08 Fujifilm Corp ポジ型レジスト組成物およびそれを用いたパターン形成方法
JP4621754B2 (ja) 2007-03-28 2011-01-26 富士フイルム株式会社 ポジ型レジスト組成物およびパターン形成方法
JP4466881B2 (ja) * 2007-06-06 2010-05-26 信越化学工業株式会社 フォトマスクブランク、レジストパターンの形成方法、及びフォトマスクの製造方法
JP5449675B2 (ja) * 2007-09-21 2014-03-19 富士フイルム株式会社 感光性組成物、該感光性組成物を用いたパターン形成方法及び該感光性組成物に用いられる化合物
JP2009251037A (ja) * 2008-04-01 2009-10-29 Tokyo Ohka Kogyo Co Ltd レジスト組成物、レジストパターン形成方法、新規な化合物および酸発生剤
CN102834374B (zh) 2010-04-16 2016-08-03 3M创新有限公司 质子传导材料
TWI682240B (zh) * 2014-11-07 2020-01-11 日商富士軟片股份有限公司 感光化射線性或感放射線性樹脂組成物、感光化射線性或感放射線性膜、具備感光化射線性或感放射線性膜之空白遮罩、圖案形成方法、電子元件的製造方法及電子元件

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US4348310A (en) * 1979-09-26 1982-09-07 E. I. Du Pont De Nemours And Company Solutions of sulfonyl fluoride compounds and fluoropolymers
US5011983A (en) * 1987-01-23 1991-04-30 Minnesota Mining And Manufacturing Company Preparation and reactions of omega-halosulfonyl perfluoroalkanesulfonates
JP3300089B2 (ja) 1993-02-15 2002-07-08 クラリアント インターナショナル リミテッド ポジ型放射感応性混合物
US5554664A (en) 1995-03-06 1996-09-10 Minnesota Mining And Manufacturing Company Energy-activatable salts with fluorocarbon anions
JP3751065B2 (ja) 1995-06-28 2006-03-01 富士通株式会社 レジスト材料及びレジストパターンの形成方法
US5998099A (en) 1996-03-08 1999-12-07 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
TWI250379B (en) * 1998-08-07 2006-03-01 Az Electronic Materials Japan Chemical amplified radiation-sensitive composition which contains onium salt and generator
JP4453138B2 (ja) * 1999-12-22 2010-04-21 住友化学株式会社 化学増幅型ポジ型レジスト組成物
JP4262402B2 (ja) 2000-10-20 2009-05-13 富士フイルム株式会社 ポジ型レジスト組成物
JP4288445B2 (ja) * 2000-10-23 2009-07-01 信越化学工業株式会社 新規オニウム塩及びレジスト材料用光酸発生剤並びにレジスト材料及びパターン形成方法
KR100795112B1 (ko) * 2001-02-05 2008-01-17 후지필름 가부시키가이샤 포지티브 레지스트 조성물
JP4102032B2 (ja) 2001-03-12 2008-06-18 富士フイルム株式会社 ポジ型レジスト組成物
TW574607B (en) * 2001-06-25 2004-02-01 Shinetsu Chemical Co Polymers, resist compositions and patterning process
JP2003149812A (ja) 2001-11-08 2003-05-21 Fuji Photo Film Co Ltd ポジ型感光性組成物
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI416270B (zh) * 2007-08-22 2013-11-21 Shinetsu Chemical Co 圖型之形成方法及用於其之圖型表面塗層材料

Also Published As

Publication number Publication date
US20070082289A1 (en) 2007-04-12
US7695891B2 (en) 2010-04-13
KR20060133922A (ko) 2006-12-27
EP1736825A2 (en) 2006-12-27
EP1736825A3 (en) 2011-03-09
JP2007003619A (ja) 2007-01-11

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