TW200705091A - Phase shift mask for preventing haze - Google Patents
Phase shift mask for preventing hazeInfo
- Publication number
- TW200705091A TW200705091A TW095109701A TW95109701A TW200705091A TW 200705091 A TW200705091 A TW 200705091A TW 095109701 A TW095109701 A TW 095109701A TW 95109701 A TW95109701 A TW 95109701A TW 200705091 A TW200705091 A TW 200705091A
- Authority
- TW
- Taiwan
- Prior art keywords
- phase shift
- shift mask
- haze
- preventing haze
- mask
- Prior art date
Links
- 230000010363 phase shift Effects 0.000 title abstract 3
- 150000002500 ions Chemical class 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 238000004140 cleaning Methods 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 230000009643 growth defect Effects 0.000 abstract 1
- 238000000206 photolithography Methods 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050040499A KR100617389B1 (ko) | 2005-05-16 | 2005-05-16 | 헤이즈 방지를 위한 위상편이 마스크 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200705091A true TW200705091A (en) | 2007-02-01 |
TWI293717B TWI293717B (en) | 2008-02-21 |
Family
ID=37419508
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095109701A TWI293717B (en) | 2005-05-16 | 2006-03-21 | Phase shift mask for preventing haze |
Country Status (5)
Country | Link |
---|---|
US (1) | US20060257752A1 (zh) |
JP (1) | JP2006323360A (zh) |
KR (1) | KR100617389B1 (zh) |
TW (1) | TWI293717B (zh) |
WO (1) | WO2006123857A1 (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100940271B1 (ko) * | 2008-04-07 | 2010-02-04 | 주식회사 하이닉스반도체 | 하프톤 위상반전마스크의 제조방법 |
JP5515238B2 (ja) * | 2008-06-05 | 2014-06-11 | 凸版印刷株式会社 | フォトマスクの曇り防止方法及び装置 |
KR101525497B1 (ko) * | 2008-09-18 | 2015-06-04 | 삼성전자주식회사 | 이온 트랩막을 포함하는 포토마스크 및 이를 이용하는 반도체 소자의 제조 방법 |
JP5497288B2 (ja) * | 2008-12-29 | 2014-05-21 | Hoya株式会社 | フォトマスクブランクの製造方法及びフォトマスクの製造方法 |
US8389183B2 (en) | 2010-02-09 | 2013-03-05 | International Business Machines Corporation | Chromeless phase-shifting photomask with undercut rim-shifting element |
US8435704B2 (en) * | 2010-03-30 | 2013-05-07 | Hoya Corporation | Mask blank, transfer mask, and methods of manufacturing the same |
EP2594994B1 (en) * | 2011-11-21 | 2016-05-18 | Shin-Etsu Chemical Co., Ltd. | Light pattern exposure method |
JP6418035B2 (ja) * | 2015-03-31 | 2018-11-07 | 信越化学工業株式会社 | 位相シフトマスクブランクス及び位相シフトマスク |
KR102313892B1 (ko) | 2016-03-29 | 2021-10-15 | 호야 가부시키가이샤 | 마스크 블랭크, 마스크 블랭크의 제조 방법, 전사용 마스크의 제조 방법 및 반도체 디바이스의 제조 방법 |
JP6323503B2 (ja) * | 2016-06-28 | 2018-05-16 | 信越化学工業株式会社 | フォトマスクブランク、フォトマスク及び光パターン照射方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5674647A (en) * | 1992-11-21 | 1997-10-07 | Ulvac Coating Corporation | Phase shift mask and manufacturing method thereof and exposure method using phase shift mask |
JPH06258817A (ja) * | 1993-03-05 | 1994-09-16 | Toppan Printing Co Ltd | 位相シフトマスクおよびそれに用いるブランクならびにそれらの製造方法 |
KR0166837B1 (ko) * | 1996-06-27 | 1999-01-15 | 문정환 | 위상반전 마스크 및 그 제조방법 |
KR100555447B1 (ko) * | 1998-02-17 | 2006-04-21 | 삼성전자주식회사 | 하프톤 위상반전 마스크 및 그 제조방법 |
JPH11258772A (ja) * | 1998-03-16 | 1999-09-24 | Toppan Printing Co Ltd | ハーフトーン型位相シフトマスク用ブランクス及びハーフトーン型位相シフトマスク |
KR20040003653A (ko) * | 2002-07-03 | 2004-01-13 | 주식회사 하이닉스반도체 | 위상반전 마스크 제작방법 |
US7781125B2 (en) * | 2002-12-26 | 2010-08-24 | Hoya Corporation | Lithography mask blank |
-
2005
- 2005-05-16 KR KR1020050040499A patent/KR100617389B1/ko active IP Right Grant
-
2006
- 2006-03-10 WO PCT/KR2006/000874 patent/WO2006123857A1/en active Application Filing
- 2006-03-17 JP JP2006074743A patent/JP2006323360A/ja active Pending
- 2006-03-21 TW TW095109701A patent/TWI293717B/zh active
- 2006-03-22 US US11/277,182 patent/US20060257752A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
KR100617389B1 (ko) | 2006-08-31 |
TWI293717B (en) | 2008-02-21 |
US20060257752A1 (en) | 2006-11-16 |
JP2006323360A (ja) | 2006-11-30 |
WO2006123857A1 (en) | 2006-11-23 |
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