TW200704836A - Apparatus and method for pulling silicon single crystal - Google Patents

Apparatus and method for pulling silicon single crystal

Info

Publication number
TW200704836A
TW200704836A TW094125633A TW94125633A TW200704836A TW 200704836 A TW200704836 A TW 200704836A TW 094125633 A TW094125633 A TW 094125633A TW 94125633 A TW94125633 A TW 94125633A TW 200704836 A TW200704836 A TW 200704836A
Authority
TW
Taiwan
Prior art keywords
coils
melt
coil
single crystal
silicon single
Prior art date
Application number
TW094125633A
Other languages
Chinese (zh)
Other versions
TWI276709B (en
Inventor
Sen-Lin Fu
Naoki Ono
Original Assignee
Sumitomo Mitsubishi Silicon
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Mitsubishi Silicon filed Critical Sumitomo Mitsubishi Silicon
Publication of TW200704836A publication Critical patent/TW200704836A/en
Application granted granted Critical
Publication of TWI276709B publication Critical patent/TWI276709B/en

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

A quartz crucible which pools silicon melt is rotated at a predetermined rate, and an ingot of silicon single crystal pulled up from the melt is rotated at a predetermined rate. First and second coils are arranged in such a manner that the center of each coil is set to conform with the rotation axis of the crucible, and a magnetic field is generated by passing electric currents through the two coils in the same direction. The first coil is arranged outside a chamber, and the second coil is arranged inside the chamber. An intermediate position of a predetermined spacing between the first and second coils is controlled to be at or under the surface of the silicon melt so that the distance between the intermediate position and the melt surface is 0 mm or more and 10,000 mm or less.
TW94125633A 2004-04-22 2005-07-28 Apparatus and method for pulling silicon single crystal TWI276709B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004126263A JP2005306669A (en) 2004-04-22 2004-04-22 Apparatus for pulling up silicon single cryststal and method therefor

Publications (2)

Publication Number Publication Date
TW200704836A true TW200704836A (en) 2007-02-01
TWI276709B TWI276709B (en) 2007-03-21

Family

ID=35435846

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94125633A TWI276709B (en) 2004-04-22 2005-07-28 Apparatus and method for pulling silicon single crystal

Country Status (2)

Country Link
JP (1) JP2005306669A (en)
TW (1) TWI276709B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007013148A1 (en) * 2005-07-27 2007-02-01 Sumco Corporation Silicon single crystal pulling apparatus and method thereof
FR2895749B1 (en) * 2006-01-04 2008-05-02 Apollon Solar Soc Par Actions DEVICE AND METHOD FOR MANUFACTURING BLOCK OF CRYSTALLINE MATERIAL

Also Published As

Publication number Publication date
JP2005306669A (en) 2005-11-04
TWI276709B (en) 2007-03-21

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