TW200703899A - Method of manufacturing micro machine, and micro machine - Google Patents

Method of manufacturing micro machine, and micro machine

Info

Publication number
TW200703899A
TW200703899A TW095102070A TW95102070A TW200703899A TW 200703899 A TW200703899 A TW 200703899A TW 095102070 A TW095102070 A TW 095102070A TW 95102070 A TW95102070 A TW 95102070A TW 200703899 A TW200703899 A TW 200703899A
Authority
TW
Taiwan
Prior art keywords
sacrificial layer
micromachine
micro machine
substrate
hydrogen fluoride
Prior art date
Application number
TW095102070A
Other languages
English (en)
Other versions
TWI305445B (zh
Inventor
Tsutomu Osaka
Susumu Sato
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of TW200703899A publication Critical patent/TW200703899A/zh
Application granted granted Critical
Publication of TWI305445B publication Critical patent/TWI305445B/zh

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/173—Air-gaps
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
    • B81C1/00468—Releasing structures
    • B81C1/00476—Releasing structures removing a sacrificial layer
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02149—Means for compensation or elimination of undesirable effects of ageing changes of characteristics, e.g. electro-acousto-migration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0271—Resonators; ultrasonic resonators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/021—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the air-gap type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Micromachines (AREA)
  • Drying Of Semiconductors (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
TW095102070A 2005-01-28 2006-01-19 Method of manufacturing micro machine, and micro machine TW200703899A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005020616A JP2006211296A (ja) 2005-01-28 2005-01-28 マイクロマシンの製造方法およびマイクロマシン

Publications (2)

Publication Number Publication Date
TW200703899A true TW200703899A (en) 2007-01-16
TWI305445B TWI305445B (zh) 2009-01-11

Family

ID=36740260

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095102070A TW200703899A (en) 2005-01-28 2006-01-19 Method of manufacturing micro machine, and micro machine

Country Status (7)

Country Link
US (1) US20090200899A1 (zh)
EP (1) EP1890379A1 (zh)
JP (1) JP2006211296A (zh)
KR (1) KR20070102519A (zh)
CN (1) CN101111993A (zh)
TW (1) TW200703899A (zh)
WO (1) WO2006080226A1 (zh)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2843310B1 (fr) 2002-08-08 2004-09-10 Salomon Sa Dispositif de fixation a decrochage par l'avant
FR2833178B1 (fr) 2001-12-11 2004-02-13 Salomon Sa Dispositif de fixation d'une chaussure a un article de sport comportant des moyens de rappel perfectionnes
FR2865660B1 (fr) 2004-01-30 2006-04-07 Salomon Sa Dispositif de fixation a deverrouillage integre
FR2873044B1 (fr) 2004-07-13 2006-09-29 Salomon Sa Dispositif de fixation d'une chaussure a un article de sport avec systeme de rappel elastique separe
JP5220503B2 (ja) * 2008-07-23 2013-06-26 太陽誘電株式会社 弾性波デバイス
JP2010232983A (ja) * 2009-03-27 2010-10-14 Nippon Telegr & Teleph Corp <Ntt> 薄膜振動子およびその製造方法
JP5319491B2 (ja) * 2009-10-22 2013-10-16 太陽誘電株式会社 圧電薄膜共振子
US9726563B2 (en) * 2012-09-25 2017-08-08 The University Of Tokyo Device member including cavity and method of producing the device member including cavity
US9978621B1 (en) * 2016-11-14 2018-05-22 Applied Materials, Inc. Selective etch rate monitor
US10637435B2 (en) * 2016-12-22 2020-04-28 Samsung Electro-Mechanics Co., Ltd. Bulk acoustic wave resonator and filter including the same
CN106744650B (zh) * 2016-12-26 2018-09-04 苏州工业园区纳米产业技术研究院有限公司 Mems释放长度检测结构及其制备方法
CN107231138A (zh) * 2016-12-29 2017-10-03 杭州左蓝微电子技术有限公司 带有支撑结构的薄膜体声波谐振器及其制备方法
CN107222181A (zh) * 2016-12-29 2017-09-29 杭州左蓝微电子技术有限公司 基于soi基片的薄膜体声波谐振器及其制备方法
CN107528561A (zh) * 2017-09-12 2017-12-29 电子科技大学 一种空腔型薄膜体声波谐振器及其制备方法
KR102109884B1 (ko) 2018-05-17 2020-05-12 삼성전기주식회사 체적 음향 공진기 및 이의 제조방법
KR20200031541A (ko) * 2018-09-14 2020-03-24 스카이워크스 솔루션즈, 인코포레이티드 희생 층 에칭을 위한 릴리스 포트들의 위치들
CN109474254B (zh) 2018-10-31 2020-12-08 武汉衍熙微器件有限公司 一种声波器件及其制作方法
CN111786654B (zh) * 2019-04-04 2023-01-06 中芯集成电路（宁波）有限公司上海分公司 体声波谐振器及其制造方法和滤波器、射频通信系统
CN111786644B (zh) * 2019-04-04 2023-01-06 中芯集成电路（宁波）有限公司上海分公司 体声波谐振器及其制造方法和滤波器、射频通信系统
CN111063657B (zh) * 2019-11-29 2022-08-05 福建省福联集成电路有限公司 一种用于大电流的空气桥及制作方法
CN113346864B (zh) * 2021-05-28 2022-01-04 杭州星阖科技有限公司 一种体声波谐振器及其制作方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5692279A (en) * 1995-08-17 1997-12-02 Motorola Method of making a monolithic thin film resonator lattice filter
US6060018A (en) * 1997-09-12 2000-05-09 Nippon Koshuha Steel Co., Ltd. Cold tool steel featuring high size stability, wear-resistance and machinability
DE19941042A1 (de) * 1999-08-28 2001-03-15 Bosch Gmbh Robert Verfahren zur Herstellung oberflächenmikromechanischer Strukturen durch Ätzung mit einem dampfförmigen, flußsäurehaltigen Ätzmedium
US6384697B1 (en) * 2000-05-08 2002-05-07 Agilent Technologies, Inc. Cavity spanning bottom electrode of a substrate-mounted bulk wave acoustic resonator

Also Published As

Publication number Publication date
TWI305445B (zh) 2009-01-11
JP2006211296A (ja) 2006-08-10
KR20070102519A (ko) 2007-10-18
CN101111993A (zh) 2008-01-23
WO2006080226A1 (ja) 2006-08-03
US20090200899A1 (en) 2009-08-13
EP1890379A1 (en) 2008-02-20

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