TW200703582A - Method of manufacturing a CMOS image sensor - Google Patents

Method of manufacturing a CMOS image sensor

Info

Publication number
TW200703582A
TW200703582A TW094122710A TW94122710A TW200703582A TW 200703582 A TW200703582 A TW 200703582A TW 094122710 A TW094122710 A TW 094122710A TW 94122710 A TW94122710 A TW 94122710A TW 200703582 A TW200703582 A TW 200703582A
Authority
TW
Taiwan
Prior art keywords
pixel array
manufacturing
image sensor
array area
semiconductor substrate
Prior art date
Application number
TW094122710A
Other languages
Chinese (zh)
Other versions
TWI253722B (en
Inventor
Sheng-Chin Li
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW94122710A priority Critical patent/TWI253722B/en
Application granted granted Critical
Publication of TWI253722B publication Critical patent/TWI253722B/en
Publication of TW200703582A publication Critical patent/TW200703582A/en

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  • Solid State Image Pick-Up Elements (AREA)

Abstract

The present invention relates to the method of manufacturing an image sensor, the method comprising providing a semiconductor substrate, which comprises a pixel array area and a logic area, a plurality of the photodiodes are formed on the semiconductor substrate of the pixel array area, a multilevel interconnect process is processed on the semiconductor substrate, a passivation is doping on the pixel array area and the logic area, removing the passivation on the pixel array area, and a plurality of the color filter arrays are formed on the pixel array area and correspond to the photodiode individually.
TW94122710A 2005-07-05 2005-07-05 Method of manufacturing a CMOS image sensor TWI253722B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW94122710A TWI253722B (en) 2005-07-05 2005-07-05 Method of manufacturing a CMOS image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW94122710A TWI253722B (en) 2005-07-05 2005-07-05 Method of manufacturing a CMOS image sensor

Publications (2)

Publication Number Publication Date
TWI253722B TWI253722B (en) 2006-04-21
TW200703582A true TW200703582A (en) 2007-01-16

Family

ID=37586696

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94122710A TWI253722B (en) 2005-07-05 2005-07-05 Method of manufacturing a CMOS image sensor

Country Status (1)

Country Link
TW (1) TWI253722B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI637496B (en) * 2015-03-18 2018-10-01 聯華電子股份有限公司 Semiconductor device and method for fabricating the same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI759757B (en) * 2020-06-05 2022-04-01 揚明光學股份有限公司 Optical characteristic measurement device and fabrication method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI637496B (en) * 2015-03-18 2018-10-01 聯華電子股份有限公司 Semiconductor device and method for fabricating the same

Also Published As

Publication number Publication date
TWI253722B (en) 2006-04-21

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