TW200703497A - A method for local wafer thinning and reinforcement - Google Patents

A method for local wafer thinning and reinforcement

Info

Publication number
TW200703497A
TW200703497A TW095118724A TW95118724A TW200703497A TW 200703497 A TW200703497 A TW 200703497A TW 095118724 A TW095118724 A TW 095118724A TW 95118724 A TW95118724 A TW 95118724A TW 200703497 A TW200703497 A TW 200703497A
Authority
TW
Taiwan
Prior art keywords
die
area
insert
reinforcement
wafer thinning
Prior art date
Application number
TW095118724A
Other languages
English (en)
Inventor
Richard A Portune
Original Assignee
Credence Systems Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Credence Systems Corp filed Critical Credence Systems Corp
Publication of TW200703497A publication Critical patent/TW200703497A/zh

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/32—Polishing; Etching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2898—Sample preparation, e.g. removing encapsulation, etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate

Landscapes

  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Pathology (AREA)
  • Health & Medical Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
TW095118724A 2005-05-27 2006-05-26 A method for local wafer thinning and reinforcement TW200703497A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/139,706 US7314767B2 (en) 2005-05-27 2005-05-27 Method for local wafer thinning and reinforcement

Publications (1)

Publication Number Publication Date
TW200703497A true TW200703497A (en) 2007-01-16

Family

ID=36916069

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095118724A TW200703497A (en) 2005-05-27 2006-05-26 A method for local wafer thinning and reinforcement

Country Status (4)

Country Link
US (1) US7314767B2 (zh)
EP (1) EP1726968A3 (zh)
JP (1) JP2007013124A (zh)
TW (1) TW200703497A (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008075970A1 (en) * 2006-12-19 2008-06-26 Rec Scanwafer As Method and device for se aration of silicon wafers
US8048775B2 (en) * 2007-07-20 2011-11-01 Alpha And Omega Semiconductor Incorporated Process of forming ultra thin wafers having an edge support ring
US20100013041A1 (en) * 2008-07-15 2010-01-21 Micron Technology, Inc. Microelectronic imager packages with covers having non-planar surface features
US8248097B2 (en) * 2009-04-02 2012-08-21 International Business Machines Corporation Method and apparatus for probing a wafer
US20140061864A1 (en) * 2012-09-04 2014-03-06 Samsung Electro-Mechanics Co., Ltd. Semiconductor substrate having crack preventing structure and method of manufacturing the same
JP2014093420A (ja) * 2012-11-02 2014-05-19 Toyota Motor Corp ウェハを支持ディスクに接着する治具、および、それを用いた半導体装置の製造方法
CN103029047B (zh) * 2012-12-06 2016-03-02 苏州远东砂轮有限公司 一种涂附磨具横截面的制造方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1472167A1 (de) 1965-11-26 1969-01-09 Leitz Ernst Gmbh Mikroskop-Immersionsobjektiv
GB1281611A (en) 1970-02-10 1972-07-12 Vickers Ltd Apochromatic microscope objectives
JPS5141355B2 (zh) 1973-02-08 1976-11-09
DD215640A1 (de) 1983-05-02 1984-11-14 Zeiss Jena Veb Carl Frontlinsengruppe fuer immersionsmikroskopobjektiv in hd-ausfuehrung mit hoher apertur
US5004307A (en) 1990-04-12 1991-04-02 The Board Of Trustees Of The Leland Stanford Junior University Near field and solid immersion optical microscope
US5208648A (en) 1991-03-11 1993-05-04 International Business Machines Corporation Apparatus and a method for high numerical aperture microscopic examination of materials
US5220403A (en) 1991-03-11 1993-06-15 International Business Machines Corporation Apparatus and a method for high numerical aperture microscopic examination of materials
US5282088A (en) 1992-10-19 1994-01-25 Mark Davidson Aplanatic microlens and method for making same
US5475316A (en) 1993-12-27 1995-12-12 Hypervision, Inc. Transportable image emission microscope
US5940545A (en) 1996-07-18 1999-08-17 International Business Machines Corporation Noninvasive optical method for measuring internal switching and other dynamic parameters of CMOS circuits
US6591121B1 (en) 1996-09-10 2003-07-08 Xoetronics Llc Measurement, data acquisition, and signal processing
US6252412B1 (en) 1999-01-08 2001-06-26 Schlumberger Technologies, Inc. Method of detecting defects in patterned substrates
US6462814B1 (en) 2000-03-15 2002-10-08 Schlumberger Technologies, Inc. Beam delivery and imaging for optical probing of a device operating under electrical test
US6720588B2 (en) 2001-11-28 2004-04-13 Optonics, Inc. Avalanche photodiode for photon counting applications and method thereof
US6621275B2 (en) 2001-11-28 2003-09-16 Optonics Inc. Time resolved non-invasive diagnostics system
US6594086B1 (en) 2002-01-16 2003-07-15 Optonics, Inc. (A Credence Company) Bi-convex solid immersion lens
US6921719B2 (en) * 2002-10-31 2005-07-26 Strasbaugh, A California Corporation Method of preparing whole semiconductor wafer for analysis

Also Published As

Publication number Publication date
JP2007013124A (ja) 2007-01-18
US20060267009A1 (en) 2006-11-30
EP1726968A2 (en) 2006-11-29
US7314767B2 (en) 2008-01-01
EP1726968A3 (en) 2009-04-15

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