TW200701313A - Polysilicon thin-film transistors and fabricating method thereof - Google Patents

Abstract

A fabricating method of polysilicon thin-film transistor is provided. First, a substrate is provided. An patterned amorphous-silicon layer used as an active area is formed on the substrate. A gate and an insulating layer are formed on the substrate in sequence, and a crystallization window and multiple contact windows are formed in the insulating layer. A metal-induced-lateral crystallization is performed to transform the amorphous-silicon layer into a polysilicon layer. Thereafter, an ion implantation is performed to implant ions into the gate and active area beside. A metal layer is formed on the substrate and defined as many metal contacts by photolithography and etching process. The metal contacts are electrically connected to the gate and the active area beside the gate through the contact windows, respectively. Because the formations of the crystallization window and the contact window are performed in the same process step, the process cost is reduced substantially.