TW200700585A - Metal selective etching solution - Google Patents

Metal selective etching solution

Info

Publication number
TW200700585A
TW200700585A TW095113244A TW95113244A TW200700585A TW 200700585 A TW200700585 A TW 200700585A TW 095113244 A TW095113244 A TW 095113244A TW 95113244 A TW95113244 A TW 95113244A TW 200700585 A TW200700585 A TW 200700585A
Authority
TW
Taiwan
Prior art keywords
etching
noble metal
etching solution
metal
base metal
Prior art date
Application number
TW095113244A
Other languages
Chinese (zh)
Other versions
TWI392770B (en
Inventor
Hideki Takahashi
Kenji Kuroiwa
Masaru Kato
Original Assignee
Kanto Kagaku
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kanto Kagaku filed Critical Kanto Kagaku
Publication of TW200700585A publication Critical patent/TW200700585A/en
Application granted granted Critical
Publication of TWI392770B publication Critical patent/TWI392770B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/30—Acidic compositions for etching other metallic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

The present invention aims to provide an etching solution for corroding base metal being minimized and the yield being raised in etching noble metal on a semiconductor material having noble metal and base metal, the etching solution furthermore being superior in safety and giving less effect on environment compared with an aqueous solution composed of cyanide or lead compounds. This aim is achieved by the present iodine series etching solution for etching noble metal from a semiconductor material having noble metal and base metal, wherein the noble metal-base metal etching ratio (the noble metal etching rate/the base metal etching rate) of the etching solution is 0.03 or more.
TW095113244A 2005-04-14 2006-04-13 Metal selective etching solution TWI392770B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005117440A JP4744181B2 (en) 2005-04-14 2005-04-14 Metal selective etchant

Publications (2)

Publication Number Publication Date
TW200700585A true TW200700585A (en) 2007-01-01
TWI392770B TWI392770B (en) 2013-04-11

Family

ID=37077190

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095113244A TWI392770B (en) 2005-04-14 2006-04-13 Metal selective etching solution

Country Status (4)

Country Link
JP (1) JP4744181B2 (en)
KR (1) KR101344229B1 (en)
CN (1) CN1847457B (en)
TW (1) TWI392770B (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090184092A1 (en) * 2005-10-28 2009-07-23 Kanto Kagaku Kabuashiki Kaisha Palladium-Selective Etching Solution and Method for Controlling Etching Selectivity
KR20080041766A (en) * 2006-11-08 2008-05-14 동우 화인켐 주식회사 Etchant composition for metal layer
CN100378272C (en) * 2007-02-15 2008-04-02 陈建庭 Stereo in-situ ecological urban water system repairing process
JP5758065B2 (en) * 2009-03-25 2015-08-05 関東化学株式会社 Selective etching solution for gold and nickel
JP5308986B2 (en) * 2009-10-14 2013-10-09 スタンレー電気株式会社 Compound semiconductor etching solution, compound semiconductor etching method, and compound semiconductor light emitting device manufacturing method
JP5992150B2 (en) * 2011-07-08 2016-09-14 富士フイルム株式会社 Semiconductor substrate product manufacturing method, thin film removing solution and kit used therefor
CN103194755B (en) * 2013-04-15 2015-03-25 昆山市板明电子科技有限公司 Selective iron etching solution and etching method
KR102088840B1 (en) * 2013-09-10 2020-04-16 동우 화인켐 주식회사 ETCHANT COMPOSITION FOR NICKEL-BASED METAL LAYER AND TiN
JP6300304B2 (en) * 2013-12-19 2018-03-28 学校法人関東学院 Electrolytic etching method
KR101777909B1 (en) 2015-04-27 2017-09-13 길기환 Component of gold etchant for prolonging bath life time.
JP2022112426A (en) 2021-01-21 2022-08-02 関東化学株式会社 Gold or gold alloy etchant composition and etching method
CN112928020A (en) * 2021-02-08 2021-06-08 江苏艾森半导体材料股份有限公司 Etching method of gold-nickel film and application thereof
CN113594034A (en) * 2021-08-03 2021-11-02 中山大学南昌研究院 Method for improving wet etching uniformity

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3124735B2 (en) * 1997-03-25 2001-01-15 メルテックス株式会社 Gold plating stripper
JP3706310B2 (en) * 2001-01-23 2005-10-12 日本電信電話株式会社 Microstructure manufacturing method
JP2003109949A (en) * 2001-09-28 2003-04-11 Mitsubishi Chemicals Corp Etchant and etching method
JP4032916B2 (en) * 2001-11-28 2008-01-16 三菱化学株式会社 Etching solution
JP2003224116A (en) * 2002-01-30 2003-08-08 Shin Etsu Handotai Co Ltd Etching liquid, etching method and method for manufacturing semiconductor device
JP4104454B2 (en) * 2002-12-27 2008-06-18 関東化学株式会社 Etching solution

Also Published As

Publication number Publication date
KR101344229B1 (en) 2013-12-24
KR20060108502A (en) 2006-10-18
JP2006291341A (en) 2006-10-26
CN1847457B (en) 2010-05-12
TWI392770B (en) 2013-04-11
CN1847457A (en) 2006-10-18
JP4744181B2 (en) 2011-08-10

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