TW200700306A - Insulation piping member, gas supply device and ion beam device - Google Patents

Insulation piping member, gas supply device and ion beam device

Info

Publication number
TW200700306A
TW200700306A TW095110623A TW95110623A TW200700306A TW 200700306 A TW200700306 A TW 200700306A TW 095110623 A TW095110623 A TW 095110623A TW 95110623 A TW95110623 A TW 95110623A TW 200700306 A TW200700306 A TW 200700306A
Authority
TW
Taiwan
Prior art keywords
piping member
ion beam
insulation
gas supply
insulation piping
Prior art date
Application number
TW095110623A
Other languages
Chinese (zh)
Other versions
TWI386355B (en
Inventor
Eiji Isobe
Masateru Sato
Tatsuo Nishihara
Original Assignee
Sumitomo Eaton Nova
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Eaton Nova filed Critical Sumitomo Eaton Nova
Publication of TW200700306A publication Critical patent/TW200700306A/en
Application granted granted Critical
Publication of TWI386355B publication Critical patent/TWI386355B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32467—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32513—Sealing means, e.g. sealing between different parts of the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32825—Working under atmospheric pressure or higher
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2277/00—Applications of particle accelerators
    • H05H2277/12—Ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)

Abstract

To provide an insulation piping member allowing a gas source to be formed at a lowe-voltage part and capable of reducing a down time of an ion beam device, and of reducing probability of discharge of an insulation pipe. This insulation piping member 10 is used for a piping system for supplying a process gas to a part having a voltage higher than that of a ground part. The insulation pipe 11 used as a passage of the process gas is combined with an insulating purge box 12 for housing the insulation pipe 11, and a supply part and a discharge part for a harmless purge gas are formed in the purge box 12.
TW095110623A 2005-03-31 2006-03-28 An insulating piping member, a gas supply device, and an ion beam device TWI386355B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005102317A JP4695911B2 (en) 2005-03-31 2005-03-31 Insulating piping member, gas supply device, and ion beam device

Publications (2)

Publication Number Publication Date
TW200700306A true TW200700306A (en) 2007-01-01
TWI386355B TWI386355B (en) 2013-02-21

Family

ID=37408006

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095110623A TWI386355B (en) 2005-03-31 2006-03-28 An insulating piping member, a gas supply device, and an ion beam device

Country Status (3)

Country Link
JP (1) JP4695911B2 (en)
KR (1) KR101166271B1 (en)
TW (1) TWI386355B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105556641A (en) * 2013-07-23 2016-05-04 恩特格里斯公司 Remote delivery of chemical reagents
CN111863657A (en) * 2019-04-25 2020-10-30 晨硕国际有限公司 Air supply system for ion implanter
CN113623543A (en) * 2020-05-08 2021-11-09 晨硕国际有限公司 Gas transmission adapter device of remote doping gas supply system

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5096893B2 (en) * 2007-12-06 2012-12-12 三菱電機株式会社 Microwave ion source equipment
JP6307622B2 (en) * 2014-09-05 2018-04-04 株式会社日立ハイテクノロジーズ Electron beam apparatus and gas supply device for electron beam apparatus
KR102474022B1 (en) * 2018-06-25 2022-12-05 주성엔지니어링(주) Appratus for processing substrate
JP7449747B2 (en) 2020-03-30 2024-03-14 住友重機械工業株式会社 Ion source gas piping structure and ion source gas piping system

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5123673B2 (en) * 1973-02-20 1976-07-19
JPS55154558A (en) * 1979-05-22 1980-12-02 Toshiba Corp Ion-implanting apparatus
JP2724503B2 (en) * 1989-06-29 1998-03-09 東京エレクトロン株式会社 Ion implanter
JPH10275695A (en) * 1997-03-28 1998-10-13 Nissin Electric Co Ltd Gas supplying method to plasma device, plasma processing device, and ion beam device
US5980183A (en) * 1997-04-14 1999-11-09 Asyst Technologies, Inc. Integrated intrabay buffer, delivery, and stocker system
JPH11132359A (en) * 1997-10-27 1999-05-21 Tofle Co Ltd Executing method for piping for exhaust of semiconductor manufacturing process device and piping unit for exhaust to be used for this method
JP3533916B2 (en) 1997-11-26 2004-06-07 日新電機株式会社 Ion beam irradiation equipment
US6311822B1 (en) * 1998-04-22 2001-11-06 Jervis B. Webb Company Method and apparatus for high speed article processing
FR2812281A1 (en) * 2000-07-25 2002-02-01 Dubuit Mach BATTERY SUPPORT LOADING AND/OR UNLOADING DEVICE AND CORRESPONDING LOADING AND/OR UNLOADING STATION
US6515290B1 (en) * 2000-09-05 2003-02-04 Axcelis Technologies, Inc. Bulk gas delivery system for ion implanters
US20020090282A1 (en) * 2001-01-05 2002-07-11 Applied Materials, Inc. Actuatable loadport system
US6699329B2 (en) * 2001-05-25 2004-03-02 George Koch Sons, Llc Coating and curing system

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105556641A (en) * 2013-07-23 2016-05-04 恩特格里斯公司 Remote delivery of chemical reagents
CN111863657A (en) * 2019-04-25 2020-10-30 晨硕国际有限公司 Air supply system for ion implanter
CN113623543A (en) * 2020-05-08 2021-11-09 晨硕国际有限公司 Gas transmission adapter device of remote doping gas supply system

Also Published As

Publication number Publication date
KR20060106709A (en) 2006-10-12
JP2006286298A (en) 2006-10-19
JP4695911B2 (en) 2011-06-08
KR101166271B1 (en) 2012-07-17
TWI386355B (en) 2013-02-21

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees