TW200644078A - Measurement method, measurement system, inspection method, inspection system, exposure method, and exposure system - Google Patents

Measurement method, measurement system, inspection method, inspection system, exposure method, and exposure system

Info

Publication number
TW200644078A
TW200644078A TW095102569A TW95102569A TW200644078A TW 200644078 A TW200644078 A TW 200644078A TW 095102569 A TW095102569 A TW 095102569A TW 95102569 A TW95102569 A TW 95102569A TW 200644078 A TW200644078 A TW 200644078A
Authority
TW
Taiwan
Prior art keywords
exposure
reticle
inspection
measurement
face shape
Prior art date
Application number
TW095102569A
Other languages
Chinese (zh)
Other versions
TWI402890B (en
Inventor
Shinichi Okita
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of TW200644078A publication Critical patent/TW200644078A/en
Application granted granted Critical
Publication of TWI402890B publication Critical patent/TWI402890B/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70783—Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Instruments For Measurement Of Length By Optical Means (AREA)
  • Length Measuring Devices By Optical Means (AREA)

Abstract

A reticle is loaded on a reticle measurement device (step S50) and a face shape of the reticle held on a reticle holder of the reticle measurement device is measured in advance (step S52). Since the face shape difference between the reticle holder of the reticle measurement device and the reticle holder of an exposure device is known, it is possible to calculate the face shape of the reticle in a state equivalent to the state when it is held by the reticle holder of the exposure device (step S56). The calculated face shape is used, for example, for correction of the image formation state upon exposure.
TW095102569A 2005-01-24 2006-01-24 Measurement methods, measurement systems, inspection methods, inspection systems, exposure methods and exposure systems TWI402890B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005015464 2005-01-24

Publications (2)

Publication Number Publication Date
TW200644078A true TW200644078A (en) 2006-12-16
TWI402890B TWI402890B (en) 2013-07-21

Family

ID=36692396

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095102569A TWI402890B (en) 2005-01-24 2006-01-24 Measurement methods, measurement systems, inspection methods, inspection systems, exposure methods and exposure systems

Country Status (4)

Country Link
JP (1) JP5278719B2 (en)
KR (1) KR101193432B1 (en)
TW (1) TWI402890B (en)
WO (1) WO2006078025A1 (en)

Cited By (5)

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US9116136B2 (en) 2012-06-27 2015-08-25 Nuflare Technology, Inc Inspection method and system
TWI572975B (en) * 2012-02-15 2017-03-01 克萊譚克公司 Methods,inspection systems and a computer readable medium for inspecting a photolithographic reticle
CN112154320A (en) * 2018-06-11 2020-12-29 株式会社岛津制作所 Defect detection method and device
CN114467007A (en) * 2019-10-11 2022-05-10 信越半导体株式会社 Method for measuring wafer shape
TWI846291B (en) * 2022-01-28 2024-06-21 日商尼康股份有限公司 First holding device, third holding device, fifth holding device, conveying system, exposure system, exposure method, and device manufacturing method

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US8102505B2 (en) 2007-03-20 2012-01-24 Asml Netherlands B.V. Lithographic apparatus comprising a vibration isolation support device
US7894037B2 (en) * 2007-07-30 2011-02-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101428136B1 (en) * 2007-08-03 2014-08-07 칼 짜이스 에스엠티 게엠베하 Projection objective for microlithography, projection exposure apparatus, projection exposure method and optical correction plate
NL1036307A1 (en) 2007-12-21 2009-06-23 Asml Netherlands Bv Lithographic apparatus, method for leveling an object, and lithographic projection method.
WO2017209901A2 (en) * 2016-06-03 2017-12-07 Applied Materials, Inc. Substrate distance monitoring
US10488176B2 (en) * 2016-06-17 2019-11-26 Corning Incorporated Edge registration for interferometry
TWI715150B (en) 2019-08-14 2021-01-01 錼創顯示科技股份有限公司 Ejection device, micro light emitting diode inspection and repairing equipment and inspection and repairing method
CN112880597B (en) * 2019-12-26 2022-12-27 南京力安半导体有限公司 Method for measuring wafer flatness

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JPH0618220A (en) * 1992-07-03 1994-01-25 Nikon Corp Pattern position measuring apparatus
JP3307988B2 (en) * 1992-07-17 2002-07-29 株式会社ニコン Projection exposure method and apparatus
JP3374467B2 (en) * 1993-09-14 2003-02-04 株式会社ニコン Projection exposure apparatus and exposure method
JP3167089B2 (en) * 1994-12-27 2001-05-14 キヤノン株式会社 Exposure apparatus and method
JP3393947B2 (en) * 1995-03-13 2003-04-07 株式会社東芝 Semiconductor circuit pattern evaluation method and evaluation system, writing method, and writing system
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JPH1145846A (en) * 1997-07-25 1999-02-16 Nikon Corp Scanning type exposure method and aligner
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AU9095798A (en) * 1997-09-19 1999-04-12 Nikon Corporation Stage device, a scanning aligner and a scanning exposure method, and a device manufactured thereby
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JP2001023886A (en) * 1999-07-08 2001-01-26 Nikon Corp Sample holding device and aligner
JP2002057097A (en) * 2000-05-31 2002-02-22 Nikon Corp Aligner, and microdevice and its manufacturing method
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JP2004296939A (en) * 2003-03-27 2004-10-21 Toshiba Corp Position distortion correction apparatus, exposure system, exposure method, and position distortion correction program
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JP2005005316A (en) * 2003-06-09 2005-01-06 Nikon Corp Reticle and exposure method

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI572975B (en) * 2012-02-15 2017-03-01 克萊譚克公司 Methods,inspection systems and a computer readable medium for inspecting a photolithographic reticle
US9116136B2 (en) 2012-06-27 2015-08-25 Nuflare Technology, Inc Inspection method and system
CN112154320A (en) * 2018-06-11 2020-12-29 株式会社岛津制作所 Defect detection method and device
CN112154320B (en) * 2018-06-11 2023-10-20 株式会社岛津制作所 Defect detection method and device
CN114467007A (en) * 2019-10-11 2022-05-10 信越半导体株式会社 Method for measuring wafer shape
CN114467007B (en) * 2019-10-11 2024-06-21 信越半导体株式会社 Wafer shape measuring method
TWI846291B (en) * 2022-01-28 2024-06-21 日商尼康股份有限公司 First holding device, third holding device, fifth holding device, conveying system, exposure system, exposure method, and device manufacturing method

Also Published As

Publication number Publication date
TWI402890B (en) 2013-07-21
KR101193432B1 (en) 2012-10-24
JPWO2006078025A1 (en) 2008-06-19
KR20070100866A (en) 2007-10-12
WO2006078025A1 (en) 2006-07-27
JP5278719B2 (en) 2013-09-04

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