TW200641910A - Flash memory storage system - Google Patents

Flash memory storage system

Info

Publication number
TW200641910A
TW200641910A TW094116964A TW94116964A TW200641910A TW 200641910 A TW200641910 A TW 200641910A TW 094116964 A TW094116964 A TW 094116964A TW 94116964 A TW94116964 A TW 94116964A TW 200641910 A TW200641910 A TW 200641910A
Authority
TW
Taiwan
Prior art keywords
memory
physical
flash memory
storage system
logic address
Prior art date
Application number
TW094116964A
Other languages
English (en)
Other versions
TWI275101B (en
Inventor
Yu-Hsien Wang
Chanson Lin
Tung-Hsien Wu
Chien-Chang Su
Gow-Jeng Lin
Ching Chung Hsu
Kuang Yuan Chen
Original Assignee
Prolific Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Prolific Technology Inc filed Critical Prolific Technology Inc
Priority to TW094116964A priority Critical patent/TWI275101B/zh
Priority to JP2005205210A priority patent/JP2006331378A/ja
Priority to US11/368,488 priority patent/US7596655B2/en
Publication of TW200641910A publication Critical patent/TW200641910A/zh
Application granted granted Critical
Publication of TWI275101B publication Critical patent/TWI275101B/zh

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Memory System (AREA)
  • Read Only Memory (AREA)
TW094116964A 2005-05-24 2005-05-24 Flash memory storage system TWI275101B (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
TW094116964A TWI275101B (en) 2005-05-24 2005-05-24 Flash memory storage system
JP2005205210A JP2006331378A (ja) 2005-05-24 2005-07-14 フラッシュメモリ保存システム
US11/368,488 US7596655B2 (en) 2005-05-24 2006-03-07 Flash storage system with data storage security

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW094116964A TWI275101B (en) 2005-05-24 2005-05-24 Flash memory storage system

Publications (2)

Publication Number Publication Date
TW200641910A true TW200641910A (en) 2006-12-01
TWI275101B TWI275101B (en) 2007-03-01

Family

ID=37464806

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094116964A TWI275101B (en) 2005-05-24 2005-05-24 Flash memory storage system

Country Status (3)

Country Link
US (1) US7596655B2 (zh)
JP (1) JP2006331378A (zh)
TW (1) TWI275101B (zh)

Families Citing this family (22)

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Publication number Priority date Publication date Assignee Title
US8225022B2 (en) 2006-08-08 2012-07-17 Dataram, Inc. Methods for eliminating intermediate bussing and bridging requirements between a solid state memory device with PCI controller and a main system bus
DE112006004185T5 (de) * 2006-12-27 2009-11-19 Intel Corporation, Santa Clara Verfahren zum Verwalten von Daten in einem nichtflüchtigen Speicher
CN100458736C (zh) * 2006-12-30 2009-02-04 北京中星微电子有限公司 Nand闪存信息提取方法和nand闪存自动识别方法
CN100462944C (zh) * 2007-03-07 2009-02-18 北京飞天诚信科技有限公司 基于非易失性存储器两个以上连续逻辑块的掉电保护方法
TWM347614U (en) * 2008-07-30 2008-12-21 Portwell Inc Device of information backup
US8099571B1 (en) * 2008-08-06 2012-01-17 Netapp, Inc. Logical block replication with deduplication
TWI419165B (en) * 2009-02-23 2013-12-11 System and method for memory management and dynamic data backup
US8321380B1 (en) 2009-04-30 2012-11-27 Netapp, Inc. Unordered idempotent replication operations
US8655848B1 (en) 2009-04-30 2014-02-18 Netapp, Inc. Unordered idempotent logical replication operations
US8756391B2 (en) * 2009-05-22 2014-06-17 Raytheon Company Multi-level security computing system
TWI431627B (zh) * 2009-07-31 2014-03-21 Silicon Motion Inc 快閃記憶體裝置及快閃記憶體裝置之運作方法
TWI453747B (zh) * 2009-09-02 2014-09-21 Silicon Motion Inc 用來管理一快閃記憶體的複數個區塊之方法以及相關之記憶裝置及其控制器
US8671072B1 (en) 2009-09-14 2014-03-11 Netapp, Inc. System and method for hijacking inodes based on replication operations received in an arbitrary order
US8996785B2 (en) * 2009-09-21 2015-03-31 Aplus Flash Technology, Inc. NAND-based hybrid NVM design that integrates NAND and NOR in 1-die with serial interface
US8775719B2 (en) * 2009-09-21 2014-07-08 Aplus Flash Technology, Inc. NAND-based hybrid NVM design that integrates NAND and NOR in 1-die with parallel interface
US8799367B1 (en) 2009-10-30 2014-08-05 Netapp, Inc. Using logical block addresses with generation numbers as data fingerprints for network deduplication
US8473690B1 (en) 2009-10-30 2013-06-25 Netapp, Inc. Using logical block addresses with generation numbers as data fingerprints to provide cache coherency
US8285920B2 (en) 2010-07-09 2012-10-09 Nokia Corporation Memory device with dynamic controllable physical logical mapping table loading
US8793429B1 (en) * 2011-06-03 2014-07-29 Western Digital Technologies, Inc. Solid-state drive with reduced power up time
US8843805B1 (en) * 2012-03-16 2014-09-23 Juniper Networks, Inc. Memory error protection using addressable dynamic ram data locations
KR101826778B1 (ko) 2016-09-28 2018-03-22 현대오트론 주식회사 플래쉬 라이프 사이클 및 성능 개선을 고려한 eeprom 에뮬레이션 구현 방법
FR3072476A1 (fr) * 2017-10-13 2019-04-19 Proton World International N.V. Unite logique de memoire pour memoire flash

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3072722B2 (ja) * 1997-06-20 2000-08-07 ソニー株式会社 フラッシュメモリを用いるデータ管理装置及びデータ管理方法並びにフラッシュメモリを用いる記憶媒体
JP4079506B2 (ja) * 1997-08-08 2008-04-23 株式会社東芝 不揮発性半導体メモリシステムの制御方法
JP4250250B2 (ja) * 1999-03-31 2009-04-08 株式会社東芝 メモリ管理装置
US6839826B2 (en) * 2002-02-06 2005-01-04 Sandisk Corporation Memory device with pointer structure to map logical to physical addresses
JP3912355B2 (ja) * 2003-10-14 2007-05-09 ソニー株式会社 データ管理装置、データ管理方法、不揮発性メモリ、不揮発性メモリを有する記憶装置及びデータ処理システム
US7509474B2 (en) * 2005-06-08 2009-03-24 Micron Technology, Inc. Robust index storage for non-volatile memory

Also Published As

Publication number Publication date
US7596655B2 (en) 2009-09-29
US20060271727A1 (en) 2006-11-30
JP2006331378A (ja) 2006-12-07
TWI275101B (en) 2007-03-01

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees