TW200641894A - Method of reading the bits of nitride read-only memory cell - Google Patents
Method of reading the bits of nitride read-only memory cellInfo
- Publication number
- TW200641894A TW200641894A TW094117304A TW94117304A TW200641894A TW 200641894 A TW200641894 A TW 200641894A TW 094117304 A TW094117304 A TW 094117304A TW 94117304 A TW94117304 A TW 94117304A TW 200641894 A TW200641894 A TW 200641894A
- Authority
- TW
- Taiwan
- Prior art keywords
- reading
- bit
- memory block
- bits
- memory cell
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
- G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
Landscapes
- Read Only Memory (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW094117304A TWI291699B (en) | 2005-05-26 | 2005-05-26 | Method of reading the bits of nitride read-only memory cell |
US11/441,250 US7310261B2 (en) | 2005-05-26 | 2006-05-26 | Nitride read-only memory (NROM) device and method for reading the same |
US11/987,240 US7411833B2 (en) | 2005-05-26 | 2007-11-28 | Nitride trapping memory device and method for reading the same |
US12/149,350 US7710784B2 (en) | 2005-05-26 | 2008-04-30 | Method of reading the bits of nitride read-only memory cell |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW094117304A TWI291699B (en) | 2005-05-26 | 2005-05-26 | Method of reading the bits of nitride read-only memory cell |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200641894A true TW200641894A (en) | 2006-12-01 |
TWI291699B TWI291699B (en) | 2007-12-21 |
Family
ID=37463140
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094117304A TWI291699B (en) | 2005-05-26 | 2005-05-26 | Method of reading the bits of nitride read-only memory cell |
Country Status (2)
Country | Link |
---|---|
US (3) | US7310261B2 (zh) |
TW (1) | TWI291699B (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007172718A (ja) * | 2005-12-20 | 2007-07-05 | Samsung Electronics Co Ltd | 不揮発性半導体記憶装置 |
US7483311B2 (en) * | 2006-02-07 | 2009-01-27 | Micron Technology, Inc. | Erase operation in a flash memory device |
US8287906B2 (en) * | 2008-05-06 | 2012-10-16 | Agency For Science, Technology And Research | Formation of hydrogel in the presence of peroxidase and low concentration of hydrogen peroxide |
US8031520B2 (en) * | 2008-08-21 | 2011-10-04 | Macronix International Co., Ltd. | Method for reading and programming a charge-trap memory device compensated for an array/second-bit/neighbor-bit effect |
US8004890B2 (en) * | 2009-05-08 | 2011-08-23 | Macronix International Co., Ltd. | Operation method of non-volatile memory |
US8238158B2 (en) * | 2010-08-04 | 2012-08-07 | Texas Instruments Incorporated | Programming of memory cells in a nonvolatile memory using an active transition control |
KR101845510B1 (ko) * | 2011-10-25 | 2018-04-05 | 삼성전자주식회사 | 반도체 저장 장치 및 시스템 |
CN111724830B (zh) * | 2019-03-18 | 2022-07-26 | 中芯国际集成电路制造(上海)有限公司 | 一种电压增强型读出放大电路 |
CN114664351B (zh) * | 2022-03-24 | 2022-11-25 | 珠海博雅科技股份有限公司 | 用于非易失存储器的参考电流产生模块及其操作方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2647394C2 (de) * | 1976-10-20 | 1978-11-16 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | MOS-Halbleiterspeicherbaustein |
-
2005
- 2005-05-26 TW TW094117304A patent/TWI291699B/zh active
-
2006
- 2006-05-26 US US11/441,250 patent/US7310261B2/en active Active
-
2007
- 2007-11-28 US US11/987,240 patent/US7411833B2/en active Active
-
2008
- 2008-04-30 US US12/149,350 patent/US7710784B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US7310261B2 (en) | 2007-12-18 |
US7411833B2 (en) | 2008-08-12 |
US20080205135A1 (en) | 2008-08-28 |
US20080084759A1 (en) | 2008-04-10 |
US20060268617A1 (en) | 2006-11-30 |
TWI291699B (en) | 2007-12-21 |
US7710784B2 (en) | 2010-05-04 |
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