TW200640301A - Surface wave plasma processing apparatus - Google Patents

Surface wave plasma processing apparatus

Info

Publication number
TW200640301A
TW200640301A TW095114515A TW95114515A TW200640301A TW 200640301 A TW200640301 A TW 200640301A TW 095114515 A TW095114515 A TW 095114515A TW 95114515 A TW95114515 A TW 95114515A TW 200640301 A TW200640301 A TW 200640301A
Authority
TW
Taiwan
Prior art keywords
wave
disposed
dielectric
dielectric blocks
plasma
Prior art date
Application number
TW095114515A
Other languages
English (en)
Inventor
Masayasu Suzuki
Tetuya Saruwatari
Original Assignee
Shimadzu Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shimadzu Corp filed Critical Shimadzu Corp
Publication of TW200640301A publication Critical patent/TW200640301A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
TW095114515A 2005-05-12 2006-04-24 Surface wave plasma processing apparatus TW200640301A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005139454 2005-05-12

Publications (1)

Publication Number Publication Date
TW200640301A true TW200640301A (en) 2006-11-16

Family

ID=37396414

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095114515A TW200640301A (en) 2005-05-12 2006-04-24 Surface wave plasma processing apparatus

Country Status (6)

Country Link
US (1) US8018162B2 (zh)
JP (1) JP4803179B2 (zh)
KR (1) KR100885395B1 (zh)
CN (1) CN101099419A (zh)
TW (1) TW200640301A (zh)
WO (1) WO2006120904A1 (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2921388B1 (fr) * 2007-09-20 2010-11-26 Air Liquide Dispositif et procede de depot cvd assiste par plasma tres haute frequence a la pression atmospherique, et ses applications
JP5686996B2 (ja) * 2010-07-15 2015-03-18 国立大学法人東北大学 プラズマ処理装置
JP5572019B2 (ja) * 2010-07-15 2014-08-13 国立大学法人東北大学 プラズマ処理装置及びプラズマ処理方法
JP5631088B2 (ja) 2010-07-15 2014-11-26 国立大学法人東北大学 プラズマ処理装置及びプラズマ処理方法
JP6178140B2 (ja) * 2013-07-10 2017-08-09 東京エレクトロン株式会社 マイクロ波プラズマ処理装置及びマイクロ波供給方法
JP6356415B2 (ja) * 2013-12-16 2018-07-11 東京エレクトロン株式会社 マイクロ波プラズマ源およびプラズマ処理装置
KR101723190B1 (ko) * 2015-07-07 2017-04-04 주식회사 아바코 증착장치용 마이크로웨이브 전송장치
KR101781290B1 (ko) * 2016-02-29 2017-09-22 부산대학교 산학협력단 대면적 표면파 플라즈마 장치 및 이를 이용하여 전기전도성 다이아몬드 코팅방법
CN108878243B (zh) * 2017-05-11 2020-08-21 北京北方华创微电子装备有限公司 表面波等离子体加工设备

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2932942B2 (ja) * 1994-07-14 1999-08-09 住友金属工業株式会社 プラズマ処理装置
JP3164200B2 (ja) * 1995-06-15 2001-05-08 住友金属工業株式会社 マイクロ波プラズマ処理装置
JP3164195B2 (ja) * 1995-06-15 2001-05-08 住友金属工業株式会社 マイクロ波プラズマ処理装置
US5951887A (en) * 1996-03-28 1999-09-14 Sumitomo Metal Industries, Ltd. Plasma processing apparatus and plasma processing method
JP3657744B2 (ja) * 1996-07-08 2005-06-08 株式会社東芝 プラズマ処理装置
TW477009B (en) * 1999-05-26 2002-02-21 Tadahiro Ohmi Plasma process device
JP3668079B2 (ja) * 1999-05-31 2005-07-06 忠弘 大見 プラズマプロセス装置
JP3723783B2 (ja) 2002-06-06 2005-12-07 東京エレクトロン株式会社 プラズマ処理装置
JP2004128346A (ja) * 2002-10-04 2004-04-22 Sekisui Chem Co Ltd Ｃｖｄ装置及び半導体装置の製造方法
TW200415726A (en) * 2002-12-05 2004-08-16 Adv Lcd Tech Dev Ct Co Ltd Plasma processing apparatus and plasma processing method
JP4064274B2 (ja) 2003-03-20 2008-03-19 積水化学工業株式会社 プラズマ処理装置およびその電極ユニットの製造方法
US20050000446A1 (en) * 2003-07-04 2005-01-06 Yukihiko Nakata Plasma processing apparatus and plasma processing method
JP4396166B2 (ja) * 2003-07-10 2010-01-13 株式会社島津製作所 表面波励起プラズマ処理装置
US7584714B2 (en) * 2004-09-30 2009-09-08 Tokyo Electron Limited Method and system for improving coupling between a surface wave plasma source and a plasma space

Also Published As

Publication number Publication date
KR100885395B1 (ko) 2009-02-24
US20090232715A1 (en) 2009-09-17
CN101099419A (zh) 2008-01-02
JP4803179B2 (ja) 2011-10-26
WO2006120904A1 (ja) 2006-11-16
KR20070088765A (ko) 2007-08-29
US8018162B2 (en) 2011-09-13
JPWO2006120904A1 (ja) 2008-12-18

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