TW200635088A - Nitride semiconductor light-emitting device and method for fabrication thereof - Google Patents

Nitride semiconductor light-emitting device and method for fabrication thereof

Info

Publication number
TW200635088A
TW200635088A TW095104722A TW95104722A TW200635088A TW 200635088 A TW200635088 A TW 200635088A TW 095104722 A TW095104722 A TW 095104722A TW 95104722 A TW95104722 A TW 95104722A TW 200635088 A TW200635088 A TW 200635088A
Authority
TW
Taiwan
Prior art keywords
nitride semiconductor
semiconductor layer
substrate
emitting device
light
Prior art date
Application number
TW095104722A
Other languages
Chinese (zh)
Other versions
TWI342613B (en
Inventor
Yasuhito Urashima
Katsuki Kusunoki
Original Assignee
Showa Denko Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko Kk filed Critical Showa Denko Kk
Publication of TW200635088A publication Critical patent/TW200635088A/en
Application granted granted Critical
Publication of TWI342613B publication Critical patent/TWI342613B/en

Links

Landscapes

  • Led Devices (AREA)
  • Weting (AREA)

Abstract

A nitride semiconductor light-emitting device includes a substrate and a nitride semiconductor layer including a light-emitting layer stacked on the substrate, wherein a normal line relative to a lateral face of the nitride semiconductor layer is not perpendicular to a normal line relative to a principal plane of the substrate. A method for the production of a nitride semiconductor light-emitting device that includes a substrate and a nitride semiconductor layer including a light-emitting layer stacked on the substrate includes the steps of covering a first surface of the nitride semiconductor layer with a mask provided with a prescribed pattern, removing the nitride semiconductor layer in regions to be divided into component devices till the substrate, subjecting the nitride semiconductor layer to wet-etching treatment and dividing the nitride semiconductor layer into the component devices.
TW95104722A 2005-02-14 2006-02-13 Nitride semiconductor light-emitting device and method for fabrication thereof TWI342613B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005035935 2005-02-14

Publications (2)

Publication Number Publication Date
TW200635088A true TW200635088A (en) 2006-10-01
TWI342613B TWI342613B (en) 2011-05-21

Family

ID=37593103

Family Applications (1)

Application Number Title Priority Date Filing Date
TW95104722A TWI342613B (en) 2005-02-14 2006-02-13 Nitride semiconductor light-emitting device and method for fabrication thereof

Country Status (3)

Country Link
JP (1) JP2009033205A (en)
KR (1) KR100674486B1 (en)
TW (1) TWI342613B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103094444A (en) * 2011-10-27 2013-05-08 广镓光电股份有限公司 Semiconductor light emitting diode structure
US8455879B2 (en) 2006-12-28 2013-06-04 Saint-Gobain Ceramics & Plastics, Inc. Sapphire substrates and methods of making same
US8740670B2 (en) 2006-12-28 2014-06-03 Saint-Gobain Ceramics & Plastics, Inc. Sapphire substrates and methods of making same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5631190A (en) * 1994-10-07 1997-05-20 Cree Research, Inc. Method for producing high efficiency light-emitting diodes and resulting diode structures
US6229160B1 (en) * 1997-06-03 2001-05-08 Lumileds Lighting, U.S., Llc Light extraction from a semiconductor light-emitting device via chip shaping
JP2000068608A (en) * 1998-08-24 2000-03-03 Agency Of Ind Science & Technol Manufacture of gallium nitride based semiconductor element
JP4493127B2 (en) * 1999-09-10 2010-06-30 シャープ株式会社 Manufacturing method of nitride semiconductor chip
JP4123830B2 (en) * 2002-05-28 2008-07-23 松下電工株式会社 LED chip
JP2005012206A (en) * 2003-05-29 2005-01-13 Mitsubishi Cable Ind Ltd Nitride semiconductor element and its manufacturing method
JP4937599B2 (en) * 2005-02-14 2012-05-23 昭和電工株式会社 Nitride semiconductor light emitting device and manufacturing method thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8455879B2 (en) 2006-12-28 2013-06-04 Saint-Gobain Ceramics & Plastics, Inc. Sapphire substrates and methods of making same
US8740670B2 (en) 2006-12-28 2014-06-03 Saint-Gobain Ceramics & Plastics, Inc. Sapphire substrates and methods of making same
US9464365B2 (en) 2006-12-28 2016-10-11 Saint-Gobain Ceramics & Plastics, Inc. Sapphire substrate
CN103094444A (en) * 2011-10-27 2013-05-08 广镓光电股份有限公司 Semiconductor light emitting diode structure

Also Published As

Publication number Publication date
KR20060091268A (en) 2006-08-18
JP2009033205A (en) 2009-02-12
KR100674486B1 (en) 2007-01-25
TWI342613B (en) 2011-05-21

Similar Documents

Publication Publication Date Title
WO2008087763A1 (en) Semiconductor device and process for manufacturing the same
WO2009059128A3 (en) Crystalline-thin-film photovoltaic structures and methods for forming the same
TW200802536A (en) Method of manufacturing semiconductor device
TW200633022A (en) Method of manufacturing an epitaxial semiconductor substrate and method of manufacturing a semiconductor device
MY140100A (en) Manufacturing method for semiconductor devices, and formation apparatus for semiconductor wafer dicing masks
TW200501199A (en) Methods of forming semiconductor mesa structures including self-aligned contact layers and related devices
TW200629416A (en) Semiconductor device and fabrication method thereof
TW200633050A (en) Manufacturing method for semiconductor chips
TW200625400A (en) Integrated passive devices
TW200501216A (en) Organic semiconductor device and method of manufacture of same
TW200717710A (en) Method of manufacturing semiconductor device
TW200637041A (en) Nitride semiconductor light-emitting device and method for fabrication thereof
SG132642A1 (en) Methods of forming semiconductor devices using embedded l-shape spacers
TW200618068A (en) Strained semiconductor devices and method for forming at least a portion thereof
TW200729409A (en) Method for fabricating semiconductor device
TW200713422A (en) Semiconductor device having dummy pattern and method for manufacturing the same
WO2009008407A1 (en) Process for producing organic semiconductor element, organic semiconductor element, and organic semiconductor device
TW200713569A (en) Bottle-shaped trench and method of fabricating the same
TW200743157A (en) Method of fabricating metal oxide semiconductor
TW200710946A (en) Method for manufacturing semiconductor apparatus and the semiconductor apparatus
TW200618093A (en) Method for manufacturing semiconductor device
TW200741889A (en) Method of fabricating recess channel in semiconductor device
TW200623948A (en) Manufacturing method for organic electronic device
TW200605268A (en) Method of manufacturing a strained semiconductor layer, method of manufacturing a semiconductor device, semiconductor device obtained with such a method and semiconductor substrate suitable for use in such a method
TW200802621A (en) Method of fabricating recess gate in semiconductor device