TW200635088A - Nitride semiconductor light-emitting device and method for fabrication thereof - Google Patents
Nitride semiconductor light-emitting device and method for fabrication thereofInfo
- Publication number
- TW200635088A TW200635088A TW095104722A TW95104722A TW200635088A TW 200635088 A TW200635088 A TW 200635088A TW 095104722 A TW095104722 A TW 095104722A TW 95104722 A TW95104722 A TW 95104722A TW 200635088 A TW200635088 A TW 200635088A
- Authority
- TW
- Taiwan
- Prior art keywords
- nitride semiconductor
- semiconductor layer
- substrate
- emitting device
- light
- Prior art date
Links
Landscapes
- Led Devices (AREA)
- Weting (AREA)
Abstract
A nitride semiconductor light-emitting device includes a substrate and a nitride semiconductor layer including a light-emitting layer stacked on the substrate, wherein a normal line relative to a lateral face of the nitride semiconductor layer is not perpendicular to a normal line relative to a principal plane of the substrate. A method for the production of a nitride semiconductor light-emitting device that includes a substrate and a nitride semiconductor layer including a light-emitting layer stacked on the substrate includes the steps of covering a first surface of the nitride semiconductor layer with a mask provided with a prescribed pattern, removing the nitride semiconductor layer in regions to be divided into component devices till the substrate, subjecting the nitride semiconductor layer to wet-etching treatment and dividing the nitride semiconductor layer into the component devices.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005035935 | 2005-02-14 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200635088A true TW200635088A (en) | 2006-10-01 |
TWI342613B TWI342613B (en) | 2011-05-21 |
Family
ID=37593103
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW95104722A TWI342613B (en) | 2005-02-14 | 2006-02-13 | Nitride semiconductor light-emitting device and method for fabrication thereof |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2009033205A (en) |
KR (1) | KR100674486B1 (en) |
TW (1) | TWI342613B (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103094444A (en) * | 2011-10-27 | 2013-05-08 | 广镓光电股份有限公司 | Semiconductor light emitting diode structure |
US8455879B2 (en) | 2006-12-28 | 2013-06-04 | Saint-Gobain Ceramics & Plastics, Inc. | Sapphire substrates and methods of making same |
US8740670B2 (en) | 2006-12-28 | 2014-06-03 | Saint-Gobain Ceramics & Plastics, Inc. | Sapphire substrates and methods of making same |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5631190A (en) * | 1994-10-07 | 1997-05-20 | Cree Research, Inc. | Method for producing high efficiency light-emitting diodes and resulting diode structures |
US6229160B1 (en) * | 1997-06-03 | 2001-05-08 | Lumileds Lighting, U.S., Llc | Light extraction from a semiconductor light-emitting device via chip shaping |
JP2000068608A (en) * | 1998-08-24 | 2000-03-03 | Agency Of Ind Science & Technol | Manufacture of gallium nitride based semiconductor element |
JP4493127B2 (en) * | 1999-09-10 | 2010-06-30 | シャープ株式会社 | Manufacturing method of nitride semiconductor chip |
JP4123830B2 (en) * | 2002-05-28 | 2008-07-23 | 松下電工株式会社 | LED chip |
JP2005012206A (en) * | 2003-05-29 | 2005-01-13 | Mitsubishi Cable Ind Ltd | Nitride semiconductor element and its manufacturing method |
JP4937599B2 (en) * | 2005-02-14 | 2012-05-23 | 昭和電工株式会社 | Nitride semiconductor light emitting device and manufacturing method thereof |
-
2006
- 2006-02-13 TW TW95104722A patent/TWI342613B/en active
- 2006-02-14 KR KR20060014356A patent/KR100674486B1/en active IP Right Grant
-
2008
- 2008-10-30 JP JP2008279055A patent/JP2009033205A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8455879B2 (en) | 2006-12-28 | 2013-06-04 | Saint-Gobain Ceramics & Plastics, Inc. | Sapphire substrates and methods of making same |
US8740670B2 (en) | 2006-12-28 | 2014-06-03 | Saint-Gobain Ceramics & Plastics, Inc. | Sapphire substrates and methods of making same |
US9464365B2 (en) | 2006-12-28 | 2016-10-11 | Saint-Gobain Ceramics & Plastics, Inc. | Sapphire substrate |
CN103094444A (en) * | 2011-10-27 | 2013-05-08 | 广镓光电股份有限公司 | Semiconductor light emitting diode structure |
Also Published As
Publication number | Publication date |
---|---|
KR20060091268A (en) | 2006-08-18 |
JP2009033205A (en) | 2009-02-12 |
KR100674486B1 (en) | 2007-01-25 |
TWI342613B (en) | 2011-05-21 |
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