TW200632906A - Memory device with vertical transistor and trench capacitor memory cells and method of fabrication - Google Patents
Memory device with vertical transistor and trench capacitor memory cells and method of fabricationInfo
- Publication number
- TW200632906A TW200632906A TW094107094A TW94107094A TW200632906A TW 200632906 A TW200632906 A TW 200632906A TW 094107094 A TW094107094 A TW 094107094A TW 94107094 A TW94107094 A TW 94107094A TW 200632906 A TW200632906 A TW 200632906A
- Authority
- TW
- Taiwan
- Prior art keywords
- trench
- vertical transistor
- trench capacitor
- fabrication
- memory device
- Prior art date
Links
Landscapes
- Semiconductor Memories (AREA)
Abstract
Memory device with vertical transistor and trench capacitor memory cells and method of fabrication. A substrate having a trench is provided with a trench capacitor in the low portion, the trench capacitor comprising a top electrode and a buried strap surrounding the top electrode. Next, a sacrificial layer is formed on a portion of sidewall of the trench, exposing the sidewall between the sacrificial layer and the buried strap. A top dielectric layer is blanketly formed in the trench to isolate a gate conductive layer of the vertical transistor and the trench capacitor. The vertical transistor contacts the substrate through a buried strap conductive layer diffused to the trench sidewall. Finally, the sacrificial layer and a portion of the top dielectric layer are removed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW94107094A TWI288411B (en) | 2005-03-09 | 2005-03-09 | Memory device with vertical transistor and trench capacitor memory cells and method of fabrication |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW94107094A TWI288411B (en) | 2005-03-09 | 2005-03-09 | Memory device with vertical transistor and trench capacitor memory cells and method of fabrication |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200632906A true TW200632906A (en) | 2006-09-16 |
TWI288411B TWI288411B (en) | 2007-10-11 |
Family
ID=39203013
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW94107094A TWI288411B (en) | 2005-03-09 | 2005-03-09 | Memory device with vertical transistor and trench capacitor memory cells and method of fabrication |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI288411B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI497649B (en) * | 2013-04-01 | 2015-08-21 | Inotera Memories Inc | Semiconductor structure with buried word line and manufacturing method therefor |
-
2005
- 2005-03-09 TW TW94107094A patent/TWI288411B/en active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI497649B (en) * | 2013-04-01 | 2015-08-21 | Inotera Memories Inc | Semiconductor structure with buried word line and manufacturing method therefor |
Also Published As
Publication number | Publication date |
---|---|
TWI288411B (en) | 2007-10-11 |
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