TW200632152A - Apparatus for manufacturing quartz film - Google Patents
Apparatus for manufacturing quartz filmInfo
- Publication number
- TW200632152A TW200632152A TW094146241A TW94146241A TW200632152A TW 200632152 A TW200632152 A TW 200632152A TW 094146241 A TW094146241 A TW 094146241A TW 94146241 A TW94146241 A TW 94146241A TW 200632152 A TW200632152 A TW 200632152A
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- substrate holder
- inlet pipe
- reaction vessel
- gas inlet
- Prior art date
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P40/00—Technologies relating to the processing of minerals
- Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
- Y02P40/57—Improving the yield, e-g- reduction of reject rates
Landscapes
- Chemical Vapour Deposition (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
An apparatus for manufacturing a quartz film comprising a reaction vessel made of quartz and equipped with a gas outlet, a substrate holder arranged in the reaction vessel (the substrate holder optionally placed in a shielding cylinder arranged in the reaction vessel along its inner surface, in which the shielding cylinder has an inner surface made of material which is inert to gaseous silicon oxide), a first gas inlet pipe that is connected through its outside end to a silicon alkoxide source-containing vessel and that has an in-side end facing a substrate to be fixed onto the substrate holder or a plane around the substrate with a space, and a second gas inlet pipe that is connected through its outside end to a vessel containing an oxygen-containing gas source and that has an inside end facing the substrate to be fixed onto the substrate holder or the plane around the substrate with a space smaller than the space between the substrate and the inside end of the first gas inlet pipe.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004374208 | 2004-12-24 | ||
JP2004377432 | 2004-12-27 | ||
JP2005272749A JP4786982B2 (en) | 2004-12-27 | 2005-09-20 | Crystal thin film manufacturing equipment |
JP2005272746A JP4682001B2 (en) | 2004-12-24 | 2005-09-20 | Crystal thin film manufacturing equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200632152A true TW200632152A (en) | 2006-09-16 |
TWI390090B TWI390090B (en) | 2013-03-21 |
Family
ID=37166516
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094146241A TWI390090B (en) | 2004-12-24 | 2005-12-23 | Apparatus for manufacturing quartz film |
Country Status (3)
Country | Link |
---|---|
KR (1) | KR101146547B1 (en) |
CN (1) | CN1807295B (en) |
TW (1) | TWI390090B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI490940B (en) * | 2008-12-22 | 2015-07-01 | Tokyo Electron Ltd | A supply method of a mixed gas, and a supply means for a mixed gas |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3111994B2 (en) * | 1998-08-03 | 2000-11-27 | 日本電気株式会社 | Vapor growth apparatus for metal oxide dielectric materials |
JP2001152342A (en) * | 1999-11-30 | 2001-06-05 | Hitachi Ltd | Semiconductor producing system and method for producing semiconductor system |
JP3592218B2 (en) * | 2000-09-06 | 2004-11-24 | 株式会社ヒューモラボラトリー | Manufacturing method of crystal thin film |
JP4592198B2 (en) * | 2001-03-01 | 2010-12-01 | シャープ株式会社 | III-V compound semiconductor manufacturing apparatus and III-V compound semiconductor manufacturing method |
-
2005
- 2005-12-23 TW TW094146241A patent/TWI390090B/en not_active IP Right Cessation
- 2005-12-23 KR KR1020050128925A patent/KR101146547B1/en not_active IP Right Cessation
- 2005-12-24 CN CN2005101191473A patent/CN1807295B/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI490940B (en) * | 2008-12-22 | 2015-07-01 | Tokyo Electron Ltd | A supply method of a mixed gas, and a supply means for a mixed gas |
Also Published As
Publication number | Publication date |
---|---|
TWI390090B (en) | 2013-03-21 |
CN1807295B (en) | 2010-11-03 |
KR20060073523A (en) | 2006-06-28 |
KR101146547B1 (en) | 2012-05-25 |
CN1807295A (en) | 2006-07-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |