TW200628398A - Method for forming nano-scale features - Google Patents

Method for forming nano-scale features

Info

Publication number
TW200628398A
TW200628398A TW094112953A TW94112953A TW200628398A TW 200628398 A TW200628398 A TW 200628398A TW 094112953 A TW094112953 A TW 094112953A TW 94112953 A TW94112953 A TW 94112953A TW 200628398 A TW200628398 A TW 200628398A
Authority
TW
Taiwan
Prior art keywords
nano
layer
scale
substrate
scale features
Prior art date
Application number
TW094112953A
Other languages
Chinese (zh)
Other versions
TWI280226B (en
Inventor
Ming-Tsan Peng
Meng-Fan Luo
Original Assignee
Ming-Tsan Peng
Meng-Fan Luo
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ming-Tsan Peng, Meng-Fan Luo filed Critical Ming-Tsan Peng
Priority to TW94112953A priority Critical patent/TWI280226B/en
Publication of TW200628398A publication Critical patent/TW200628398A/en
Application granted granted Critical
Publication of TWI280226B publication Critical patent/TWI280226B/en

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  • Carbon And Carbon Compounds (AREA)
  • Cold Cathode And The Manufacture (AREA)

Abstract

A method for forming nano-scale features is disclosed. First, a substrate is provided, a layer is formed on the substrate, and a bias voltage is applied to nano carbon tube to emit electron fluxes to the layer, so that a part of the layer diffuses or vapors to create nano-scale openings or holes. Metallic material is formed in the openings and then the layer is removed, and nano-scale metallic particles are therefore formed on the substrate.
TW94112953A 2005-02-03 2005-04-22 Method for forming nano-scale features TWI280226B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW94112953A TWI280226B (en) 2005-02-03 2005-04-22 Method for forming nano-scale features

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW94103419 2005-02-03
TW94112953A TWI280226B (en) 2005-02-03 2005-04-22 Method for forming nano-scale features

Publications (2)

Publication Number Publication Date
TW200628398A true TW200628398A (en) 2006-08-16
TWI280226B TWI280226B (en) 2007-05-01

Family

ID=38742432

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94112953A TWI280226B (en) 2005-02-03 2005-04-22 Method for forming nano-scale features

Country Status (1)

Country Link
TW (1) TWI280226B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8916454B2 (en) 2012-03-21 2014-12-23 Tsinghua University Method for making semiconducting single wall carbon nanotubes
TWI477440B (en) * 2012-03-21 2015-03-21 Hon Hai Prec Ind Co Ltd Preparation of semiconducting single-walled carbon nanotube

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8916454B2 (en) 2012-03-21 2014-12-23 Tsinghua University Method for making semiconducting single wall carbon nanotubes
TWI477440B (en) * 2012-03-21 2015-03-21 Hon Hai Prec Ind Co Ltd Preparation of semiconducting single-walled carbon nanotube
US9136117B2 (en) 2012-03-21 2015-09-15 Tsinghua University Method for making semiconducting single wall carbon nanotubes

Also Published As

Publication number Publication date
TWI280226B (en) 2007-05-01

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees