TW200625664A - Thin film transistor and method of farbricating a thin film transistor and a pixel structure - Google Patents

Thin film transistor and method of farbricating a thin film transistor and a pixel structure

Info

Publication number
TW200625664A
TW200625664A TW094100227A TW94100227A TW200625664A TW 200625664 A TW200625664 A TW 200625664A TW 094100227 A TW094100227 A TW 094100227A TW 94100227 A TW94100227 A TW 94100227A TW 200625664 A TW200625664 A TW 200625664A
Authority
TW
Taiwan
Prior art keywords
thin film
film transistor
gate
pixel structure
farbricating
Prior art date
Application number
TW094100227A
Other languages
Chinese (zh)
Other versions
TWI282180B (en
Inventor
Chiun-Hung Chen
Yu-Chou Lee
Original Assignee
Chunghwa Picture Tubes Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chunghwa Picture Tubes Ltd filed Critical Chunghwa Picture Tubes Ltd
Priority to TW94100227A priority Critical patent/TWI282180B/en
Publication of TW200625664A publication Critical patent/TW200625664A/en
Application granted granted Critical
Publication of TWI282180B publication Critical patent/TWI282180B/en

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)

Abstract

A thin film transistor and method of fabricating a thin film transistor and a pixel structure are provided. First, a gate is formed on the substrate. Then, a gate-isolating layer is formed on the substrate to cover the gate electrode. After that, a source/drain is formed on the gate-isolating layer and exposes a portion of the gate-isolating layer above the gate electrode. Then, a channel is formed on the portion of the gate-isolating layer above the gate. The source/drain layer is formed before forming the channel to prevent the channel from over etching as forming the source/drain layer. Therefore, the yields of manufacturing thin film transistor and pixel structure can be improved.
TW94100227A 2005-01-05 2005-01-05 Thin film transistor and method of fabricating a thin film transistor and a pixel structure TWI282180B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW94100227A TWI282180B (en) 2005-01-05 2005-01-05 Thin film transistor and method of fabricating a thin film transistor and a pixel structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW94100227A TWI282180B (en) 2005-01-05 2005-01-05 Thin film transistor and method of fabricating a thin film transistor and a pixel structure

Publications (2)

Publication Number Publication Date
TW200625664A true TW200625664A (en) 2006-07-16
TWI282180B TWI282180B (en) 2007-06-01

Family

ID=38777633

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94100227A TWI282180B (en) 2005-01-05 2005-01-05 Thin film transistor and method of fabricating a thin film transistor and a pixel structure

Country Status (1)

Country Link
TW (1) TWI282180B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI550859B (en) * 2008-09-12 2016-09-21 半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI550859B (en) * 2008-09-12 2016-09-21 半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof

Also Published As

Publication number Publication date
TWI282180B (en) 2007-06-01

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees