TW200625464A - Electric device with vertical component - Google Patents
Electric device with vertical componentInfo
- Publication number
- TW200625464A TW200625464A TW094116735A TW94116735A TW200625464A TW 200625464 A TW200625464 A TW 200625464A TW 094116735 A TW094116735 A TW 094116735A TW 94116735 A TW94116735 A TW 94116735A TW 200625464 A TW200625464 A TW 200625464A
- Authority
- TW
- Taiwan
- Prior art keywords
- electric device
- vertical component
- conductive layer
- elongate structure
- transistor
- Prior art date
Links
- 239000000758 substrate Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 1
- 239000002070 nanowire Substances 0.000 abstract 1
- 238000000926 separation method Methods 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
- H01L29/0669—Nanowires or nanotubes
- H01L29/0676—Nanowires or nanotubes oriented perpendicular or at an angle to a substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66439—Unipolar field-effect transistors with a one- or zero-dimensional channel, e.g. quantum wire FET, in-plane gate transistor [IPG], single electron transistor [SET], striped channel transistor, Coulomb blockade transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66469—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with one- or zero-dimensional channel, e.g. quantum wire field-effect transistors, in-plane gate transistors [IPG], single electron transistors [SET], Coulomb blockade transistors, striped channel transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/775—Field effect transistors with one dimensional charge carrier gas channel, e.g. quantum wire FET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Nanotechnology (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Composite Materials (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP04102313 | 2004-05-26 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200625464A true TW200625464A (en) | 2006-07-16 |
Family
ID=34967679
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094116735A TW200625464A (en) | 2004-05-26 | 2005-05-23 | Electric device with vertical component |
Country Status (7)
Country | Link |
---|---|
US (1) | US20070222074A1 (zh) |
EP (1) | EP1754260A1 (zh) |
JP (1) | JP2008500719A (zh) |
KR (1) | KR20070034515A (zh) |
CN (1) | CN1957477A (zh) |
TW (1) | TW200625464A (zh) |
WO (1) | WO2005117131A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI562287B (en) * | 2013-09-27 | 2016-12-11 | Intel Corp | Vertical transistor devices for embedded memory and logic technologies |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1850580A (zh) * | 2005-04-22 | 2006-10-25 | 清华大学 | 超晶格纳米器件及其制作方法 |
US7498211B2 (en) * | 2005-12-28 | 2009-03-03 | Intel Corporation | Independently controlled, double gate nanowire memory cell with self-aligned contacts |
US8114774B2 (en) | 2006-06-19 | 2012-02-14 | Nxp B.V. | Semiconductor device, and semiconductor device obtained by such a method |
FR2904146B1 (fr) | 2006-07-20 | 2008-10-17 | Commissariat Energie Atomique | Procede de fabrication d'une nanostructure a base de nanofils interconnectes,nanostructure et utilisation comme convertisseur thermoelectrique |
KR101361129B1 (ko) * | 2007-07-03 | 2014-02-13 | 삼성전자주식회사 | 발광소자 및 그 제조방법 |
US8273591B2 (en) * | 2008-03-25 | 2012-09-25 | International Business Machines Corporation | Super lattice/quantum well nanowires |
JP2011187901A (ja) | 2010-03-11 | 2011-09-22 | Canon Inc | 半導体デバイスの製造方法 |
WO2011162725A1 (en) * | 2010-06-25 | 2011-12-29 | Agency For Science, Technology And Research | Nanowire transistor and method for manufacturing a nanowire transistor |
US8592276B2 (en) | 2011-07-08 | 2013-11-26 | Peking University | Fabrication method of vertical silicon nanowire field effect transistor |
CN102315129B (zh) * | 2011-07-08 | 2013-01-16 | 北京大学 | 一种垂直硅纳米线场效应晶体管的制备方法 |
US9905311B2 (en) * | 2013-03-12 | 2018-02-27 | Sharp Kabushiki Kaisha | Shift register circuit, drive circuit, and display device |
CN104241128B (zh) * | 2013-06-09 | 2018-08-21 | 中芯国际集成电路制造(上海)有限公司 | 一种垂直SiGe FinFET的制备方法 |
US9871111B2 (en) | 2014-09-18 | 2018-01-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method |
US9397094B2 (en) | 2014-09-25 | 2016-07-19 | International Business Machines Corporation | Semiconductor structure with an L-shaped bottom plate |
CN106252227B (zh) * | 2016-08-12 | 2019-06-07 | 北京大学 | 一种带栅极调控的垂直纳米线生物传感器的集成方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR0165398B1 (ko) * | 1995-05-26 | 1998-12-15 | 윤종용 | 버티칼 트랜지스터의 제조방법 |
US6642574B2 (en) * | 1997-10-07 | 2003-11-04 | Hitachi, Ltd. | Semiconductor memory device and manufacturing method thereof |
US6060723A (en) * | 1997-07-18 | 2000-05-09 | Hitachi, Ltd. | Controllable conduction device |
US6509586B2 (en) * | 2000-03-31 | 2003-01-21 | Fujitsu Limited | Semiconductor device, method for fabricating the semiconductor device and semiconductor integrated circuit |
DE10030391C2 (de) * | 2000-06-21 | 2003-10-02 | Infineon Technologies Ag | Verfahren zur Herstellung einer Anschlussfläche für vertikale sublithographische Halbleiterstrukturen |
KR100401130B1 (ko) * | 2001-03-28 | 2003-10-10 | 한국전자통신연구원 | 수직형 채널을 가지는 초미세 mos 트랜지스터 제조방법 |
-
2005
- 2005-05-19 JP JP2007514247A patent/JP2008500719A/ja active Pending
- 2005-05-19 WO PCT/IB2005/051634 patent/WO2005117131A1/en not_active Application Discontinuation
- 2005-05-19 CN CNA2005800169150A patent/CN1957477A/zh active Pending
- 2005-05-19 KR KR1020067027136A patent/KR20070034515A/ko not_active Application Discontinuation
- 2005-05-19 US US11/569,175 patent/US20070222074A1/en not_active Abandoned
- 2005-05-19 EP EP05739381A patent/EP1754260A1/en not_active Withdrawn
- 2005-05-23 TW TW094116735A patent/TW200625464A/zh unknown
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI562287B (en) * | 2013-09-27 | 2016-12-11 | Intel Corp | Vertical transistor devices for embedded memory and logic technologies |
US9871117B2 (en) | 2013-09-27 | 2018-01-16 | Intel Corporation | Vertical transistor devices for embedded memory and logic technologies |
Also Published As
Publication number | Publication date |
---|---|
EP1754260A1 (en) | 2007-02-21 |
US20070222074A1 (en) | 2007-09-27 |
WO2005117131A1 (en) | 2005-12-08 |
CN1957477A (zh) | 2007-05-02 |
KR20070034515A (ko) | 2007-03-28 |
JP2008500719A (ja) | 2008-01-10 |
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