TW200624913A - Pixel structure - Google Patents

Pixel structure

Info

Publication number
TW200624913A
TW200624913A TW094100595A TW94100595A TW200624913A TW 200624913 A TW200624913 A TW 200624913A TW 094100595 A TW094100595 A TW 094100595A TW 94100595 A TW94100595 A TW 94100595A TW 200624913 A TW200624913 A TW 200624913A
Authority
TW
Taiwan
Prior art keywords
layer
gate
pixel electrode
active device
insulating layer
Prior art date
Application number
TW094100595A
Other languages
Chinese (zh)
Other versions
TWI318696B (en
Inventor
Han-Chung Lai
Original Assignee
Au Optronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Au Optronics Corp filed Critical Au Optronics Corp
Priority to TW94100595A priority Critical patent/TWI318696B/en
Publication of TW200624913A publication Critical patent/TW200624913A/en
Application granted granted Critical
Publication of TWI318696B publication Critical patent/TWI318696B/en

Links

Landscapes

  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

A pixel structure including an active device, a pixel electrode, a gate-insulating layer, a passivation layer and a pad layer is provided. The active device is electrically connected with the scan line and the data line, and the pixel electrode is electrically connected with the active device. The gate-insulating layer extends under the pixel electrode from the active device, and the passivation layer extends under the pixel electrode to cover the gate-insulating layer from the active device. Moreover, the pad layer is disposed between the passivation layer and the gate-insulating layer. A trench located between the data line and/or the scan line and the pixel electrode is formed in the passivation layer and the gate-insulating layer. The pad layer is disposed at least near one side of the trench, and the pad layer has an undercut at an end near the trench.
TW94100595A 2005-01-10 2005-01-10 Pixel structure TWI318696B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW94100595A TWI318696B (en) 2005-01-10 2005-01-10 Pixel structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW94100595A TWI318696B (en) 2005-01-10 2005-01-10 Pixel structure

Publications (2)

Publication Number Publication Date
TW200624913A true TW200624913A (en) 2006-07-16
TWI318696B TWI318696B (en) 2009-12-21

Family

ID=45073525

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94100595A TWI318696B (en) 2005-01-10 2005-01-10 Pixel structure

Country Status (1)

Country Link
TW (1) TWI318696B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113035066A (en) * 2020-08-21 2021-06-25 友达光电股份有限公司 Electronic device
TWI755957B (en) * 2020-08-21 2022-02-21 友達光電股份有限公司 Electronic device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113035066A (en) * 2020-08-21 2021-06-25 友达光电股份有限公司 Electronic device
TWI755957B (en) * 2020-08-21 2022-02-21 友達光電股份有限公司 Electronic device
CN113035066B (en) * 2020-08-21 2022-12-02 友达光电股份有限公司 Electronic device with a detachable cover

Also Published As

Publication number Publication date
TWI318696B (en) 2009-12-21

Similar Documents

Publication Publication Date Title
TW200627563A (en) Bump-less chip package
EP2249406A3 (en) Light emitting device, package, and system
TW200712714A (en) Active device matrix substrate
EP2333606A3 (en) Pixel structure
TW200727421A (en) Package structure and fabricating method thereof
EP1715529A3 (en) Solar cell with feedthrough via
TW200627561A (en) Chip package
EP1881365A3 (en) Display substrate and display device having the same
EP1798770A3 (en) Display device
TW200629521A (en) Semiconductor device
EP2408030A3 (en) Electrode configuration for a light emitting device
TW200733371A (en) Solid-state imaging device
TW200641494A (en) Pixel structure and active device array substrate
EP2393132A3 (en) Semiconductor light emitting device
WO2006051994A3 (en) Light-emitting device
EP1909326A4 (en) Semiconductor element and electric device
EP1624489A3 (en) Flat panel display device with reduced cross-talk
WO2009008416A1 (en) Semiconductor light-emitting device
TW200700730A (en) Probe card with stacked substrate
TW200733026A (en) Circuit structure of a display
MY151538A (en) Light-emitting device with improved electrode structures
EP2388834A3 (en) Light emitting device, light emitting device package, and lighting device
EP2482319A3 (en) Semiconductor devices and power conversion systems
WO2008096521A1 (en) Semiconductor device
TW201144892A (en) Display panel