TW200623376A - Fabrication method of anisotropic conductive film and structure of the same - Google Patents

Fabrication method of anisotropic conductive film and structure of the same

Info

Publication number
TW200623376A
TW200623376A TW093141107A TW93141107A TW200623376A TW 200623376 A TW200623376 A TW 200623376A TW 093141107 A TW093141107 A TW 093141107A TW 93141107 A TW93141107 A TW 93141107A TW 200623376 A TW200623376 A TW 200623376A
Authority
TW
Taiwan
Prior art keywords
conductive film
anisotropic conductive
nanowires
forming
same
Prior art date
Application number
TW093141107A
Other languages
Chinese (zh)
Other versions
TWI244188B (en
Inventor
Syh-Yuh Cheng
Ren-Jen Lin
Original Assignee
Ind Tech Res Inst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ind Tech Res Inst filed Critical Ind Tech Res Inst
Priority to TW93141107A priority Critical patent/TWI244188B/en
Application granted granted Critical
Publication of TWI244188B publication Critical patent/TWI244188B/en
Publication of TW200623376A publication Critical patent/TW200623376A/en

Links

Landscapes

  • Electroplating Methods And Accessories (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Chemically Coating (AREA)
  • Non-Insulated Conductors (AREA)

Abstract

The Anisotropic conductive film and the forming method thereof are disclosed. The method includes steps of (A) provide a nano-porous template and form the thin metal layer on its surface; (B) grow the nanowires into the nanochannel of the template; (C) removing the porous template; (D) forming a magnetic coating layer on the nanowires; (E) applying a magnetic field on the nanowires and forming a passivation layer between the nanowires; and (F) optionally removing the substrate. (G) forming electrodes by sputtering on the both side of the anisotropic conductive film.
TW93141107A 2004-12-29 2004-12-29 Fabrication method of anisotropic conductive film and structure of the same TWI244188B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW93141107A TWI244188B (en) 2004-12-29 2004-12-29 Fabrication method of anisotropic conductive film and structure of the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW93141107A TWI244188B (en) 2004-12-29 2004-12-29 Fabrication method of anisotropic conductive film and structure of the same

Publications (2)

Publication Number Publication Date
TWI244188B TWI244188B (en) 2005-11-21
TW200623376A true TW200623376A (en) 2006-07-01

Family

ID=37154724

Family Applications (1)

Application Number Title Priority Date Filing Date
TW93141107A TWI244188B (en) 2004-12-29 2004-12-29 Fabrication method of anisotropic conductive film and structure of the same

Country Status (1)

Country Link
TW (1) TWI244188B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI385118B (en) * 2008-11-28 2013-02-11 Univ Nat Cheng Kung Heterogeneous surface nanowire structure and its manufacturing method
TWI582796B (en) * 2010-06-09 2017-05-11 鑫河電材股份有限公司 Anisotropic conductive film and method of fabricating the same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI287805B (en) 2005-11-11 2007-10-01 Ind Tech Res Inst Composite conductive film and semiconductor package using such film

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI385118B (en) * 2008-11-28 2013-02-11 Univ Nat Cheng Kung Heterogeneous surface nanowire structure and its manufacturing method
TWI582796B (en) * 2010-06-09 2017-05-11 鑫河電材股份有限公司 Anisotropic conductive film and method of fabricating the same

Also Published As

Publication number Publication date
TWI244188B (en) 2005-11-21

Similar Documents

Publication Publication Date Title
EP1564802A3 (en) Thin film semiconductor device and method for fabricating the same
EP1396877A3 (en) Substrate for electronic devices, manufacturing method therefor, and electronic device
WO2008048928A3 (en) Methods of patterning a material on polymeric substrates
EP1750296A3 (en) Ion implantation mask and method for manufacturing the mask and a SiC semiconductor device using the mask
EP2458620A3 (en) Fabrication of graphene electronic devices using step surface contour
WO2006078281A3 (en) Systems and methods for harvesting and integrating nanowires
WO2002095799A3 (en) Thin films and production methods thereof
EP1363319A3 (en) Method of transferring a laminate and method of manufacturing a semiconductor device
WO2005008745A3 (en) Selective etching of silicon carbide films
AU2003215959A1 (en) Thin film transistor substrate and method for forming metal wire thereof
SG140481A1 (en) A method for fabricating micro and nano structures
WO2004036668A3 (en) Thin-film cathode for 3-dimensional microbattery and method for preparing such cathode
DE60235906D1 (en) EXPERIENCED
EP1986254A3 (en) Composite particles for an electrode, production process thereof and electrochemical device
WO2009005042A1 (en) Metal material, method for producing the same, and electrical electronic component using the same
SG128539A1 (en) Tunable magnetic recording medium and its fabricating method
TW200709427A (en) Wire structure, a method for fabricating a wire, a thin film transistor substrate, and a method for fabricating the thin film transistor substrate
WO2006135446A3 (en) Method of forming a porous metal catalyst on a substrate for nanotube growth
WO2006055310A3 (en) Article with patterned layer on surface
TW200628972A (en) Thin film device active matrix by pattern reversal process
CN108470849A (en) A kind of flexible base board and preparation method thereof
EP2378544A3 (en) Semiconductor device fabricating method
WO2004051738A3 (en) Method for the manufacture of a display
RU2006140760A (en) HETEROSTRUCTURE FOR A PHOTOCATODE
WO2010050773A3 (en) Embedded capacitor and method for fabricating same