TW200623241A - Methods of optimization of implant conditions to minimize channeling and structures formed thereby - Google Patents
Methods of optimization of implant conditions to minimize channeling and structures formed therebyInfo
- Publication number
- TW200623241A TW200623241A TW094135239A TW94135239A TW200623241A TW 200623241 A TW200623241 A TW 200623241A TW 094135239 A TW094135239 A TW 094135239A TW 94135239 A TW94135239 A TW 94135239A TW 200623241 A TW200623241 A TW 200623241A
- Authority
- TW
- Taiwan
- Prior art keywords
- methods
- optimization
- structures formed
- species
- implant conditions
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 3
- 230000005465 channeling Effects 0.000 title 1
- 239000007943 implant Substances 0.000 title 1
- 238000005457 optimization Methods 0.000 title 1
- 238000004377 microelectronic Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
- H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
- H01L21/28052—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a silicide layer formed by the silicidation reaction of silicon with a metal layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Ceramic Engineering (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/966,200 US20060084248A1 (en) | 2004-10-15 | 2004-10-15 | Methods of optimization of implant conditions to minimize channeling and structures formed thereby |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200623241A true TW200623241A (en) | 2006-07-01 |
TWI301636B TWI301636B (en) | 2008-10-01 |
Family
ID=35911152
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094135239A TWI301636B (en) | 2004-10-15 | 2005-10-07 | Methods of optimization of implant conditions to minimize channeling and structures formed thereby |
Country Status (5)
Country | Link |
---|---|
US (2) | US20060084248A1 (zh) |
CN (1) | CN101032010A (zh) |
DE (1) | DE112005002313T5 (zh) |
TW (1) | TWI301636B (zh) |
WO (1) | WO2006044745A2 (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102008049664B3 (de) * | 2008-09-30 | 2010-02-11 | Infineon Technologies Austria Ag | Verfahren zum Herstellen eines Halbleiterkörpers mit einem graduellen pn-Übergang |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4821091A (en) * | 1986-07-22 | 1989-04-11 | The United States Of America As Represented By The United States Department Of Energy | Polysilicon photoconductor for integrated circuits |
US5144165A (en) * | 1990-12-14 | 1992-09-01 | International Business Machines Corporation | CMOS off-chip driver circuits |
US5766969A (en) * | 1996-12-06 | 1998-06-16 | Advanced Micro Devices, Inc. | Multiple spacer formation/removal technique for forming a graded junction |
KR100268871B1 (ko) * | 1997-09-26 | 2000-10-16 | 김영환 | 반도체소자의제조방법 |
JP2000058822A (ja) * | 1998-08-12 | 2000-02-25 | Fujitsu Ltd | 半導体装置の製造方法 |
US6084280A (en) * | 1998-10-15 | 2000-07-04 | Advanced Micro Devices, Inc. | Transistor having a metal silicide self-aligned to the gate |
US6361874B1 (en) * | 2000-06-20 | 2002-03-26 | Advanced Micro Devices, Inc. | Dual amorphization process optimized to reduce gate line over-melt |
US6391731B1 (en) * | 2001-02-15 | 2002-05-21 | Chartered Semiconductor Manufacturing Ltd. | Activating source and drain junctions and extensions using a single laser anneal |
-
2004
- 2004-10-15 US US10/966,200 patent/US20060084248A1/en not_active Abandoned
-
2005
- 2005-10-07 TW TW094135239A patent/TWI301636B/zh not_active IP Right Cessation
- 2005-10-13 DE DE112005002313T patent/DE112005002313T5/de not_active Ceased
- 2005-10-13 WO PCT/US2005/037168 patent/WO2006044745A2/en active Application Filing
- 2005-10-13 CN CNA2005800327489A patent/CN101032010A/zh active Pending
-
2006
- 2006-05-05 US US11/418,593 patent/US20060202267A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
TWI301636B (en) | 2008-10-01 |
US20060202267A1 (en) | 2006-09-14 |
WO2006044745A3 (en) | 2006-11-30 |
WO2006044745A2 (en) | 2006-04-27 |
DE112005002313T5 (de) | 2007-09-06 |
CN101032010A (zh) | 2007-09-05 |
US20060084248A1 (en) | 2006-04-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |