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Application filed by Macronix Int Co LtdfiledCriticalMacronix Int Co Ltd
Priority to TW93135397ApriorityCriticalpatent/TWI292950B/en
Publication of TW200618255ApublicationCriticalpatent/TW200618255A/en
Application grantedgrantedCritical
Publication of TWI292950BpublicationCriticalpatent/TWI292950B/en
A phase change device includes a first contact electrode structure a phase change material and a first insulating material between the phase change material and the first contact electrode structure and a second contact electrode in contact with the phase change material. A contact structure formed in the first insulating material between the first contact electrode structure and the phase change material is also included. The contact structure is formed by an insulating material breakdown process. A method of forming a phase change device is also described.
TW93135397A2004-11-182004-11-18Phase change device and the method of forming the same and phase change memory cell
TWI292950B
(en)