TW200616160A - Manufacturing method of flash memory - Google Patents

Manufacturing method of flash memory

Info

Publication number
TW200616160A
TW200616160A TW093134870A TW93134870A TW200616160A TW 200616160 A TW200616160 A TW 200616160A TW 093134870 A TW093134870 A TW 093134870A TW 93134870 A TW93134870 A TW 93134870A TW 200616160 A TW200616160 A TW 200616160A
Authority
TW
Taiwan
Prior art keywords
openings
substrate
dielectric layer
floating gates
sidewalls
Prior art date
Application number
TW093134870A
Other languages
English (en)
Other versions
TWI253719B (en
Inventor
Ko-Hsing Chang
Su-Yuan Chang
Original Assignee
Powerchip Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Powerchip Semiconductor Corp filed Critical Powerchip Semiconductor Corp
Priority to TW093134870A priority Critical patent/TWI253719B/zh
Priority to US11/160,326 priority patent/US20060102948A1/en
Application granted granted Critical
Publication of TWI253719B publication Critical patent/TWI253719B/zh
Publication of TW200616160A publication Critical patent/TW200616160A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
TW093134870A 2004-11-15 2004-11-15 Manufacturing method of flash memory TWI253719B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW093134870A TWI253719B (en) 2004-11-15 2004-11-15 Manufacturing method of flash memory
US11/160,326 US20060102948A1 (en) 2004-11-15 2005-06-20 Method of fabricating flash memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW093134870A TWI253719B (en) 2004-11-15 2004-11-15 Manufacturing method of flash memory

Publications (2)

Publication Number Publication Date
TWI253719B TWI253719B (en) 2006-04-21
TW200616160A true TW200616160A (en) 2006-05-16

Family

ID=36385346

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093134870A TWI253719B (en) 2004-11-15 2004-11-15 Manufacturing method of flash memory

Country Status (2)

Country Link
US (1) US20060102948A1 (zh)
TW (1) TWI253719B (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100526478B1 (ko) * 2003-12-31 2005-11-08 동부아남반도체 주식회사 반도체 소자 및 그 제조방법
TWI255017B (en) * 2005-02-04 2006-05-11 Powerchip Semiconductor Corp Flash memory and fabricating method thereof
US7547599B2 (en) * 2005-05-26 2009-06-16 Micron Technology, Inc. Multi-state memory cell
US7319618B2 (en) * 2005-08-16 2008-01-15 Macronic International Co., Ltd. Low-k spacer structure for flash memory
TWI281753B (en) * 2005-12-13 2007-05-21 Powerchip Semiconductor Corp Non-volatile memory and manufacturing method and operating method thereof
KR100660285B1 (ko) * 2005-12-28 2006-12-20 동부일렉트로닉스 주식회사 스플리트 게이트형 비휘발성 기억 장치의 제조방법
US7968934B2 (en) * 2007-07-11 2011-06-28 Infineon Technologies Ag Memory device including a gate control layer
TW200913166A (en) * 2007-09-07 2009-03-16 Nanya Technology Corp Non-volatile memory and manufacturing method thereof
TWI389304B (zh) * 2008-07-21 2013-03-11 Nanya Technology Corp 非揮發性記憶體單元及其製造方法
CN112038344A (zh) * 2019-06-04 2020-12-04 联华电子股份有限公司 浮栅存储器元件的制作方法
CN117219500B (zh) * 2023-11-09 2024-04-05 绍兴中芯集成电路制造股份有限公司 晶体管器件和闪存存储器的集成结构及其集成方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3065164B2 (ja) * 1992-03-18 2000-07-12 富士通株式会社 半導体装置及びその製造方法
US6133098A (en) * 1999-05-17 2000-10-17 Halo Lsi Design & Device Technology, Inc. Process for making and programming and operating a dual-bit multi-level ballistic flash memory
US6151248A (en) * 1999-06-30 2000-11-21 Sandisk Corporation Dual floating gate EEPROM cell array with steering gates shared by adjacent cells
US6635533B1 (en) * 2003-03-27 2003-10-21 Powerchip Semiconductor Corp. Method of fabricating flash memory

Also Published As

Publication number Publication date
US20060102948A1 (en) 2006-05-18
TWI253719B (en) 2006-04-21

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees