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Priority to TW93129836ApriorityCriticalpatent/TWI355090B/en
Publication of TW200612566ApublicationCriticalpatent/TW200612566A/en
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Publication of TWI355090BpublicationCriticalpatent/TWI355090B/en
Insulated Gate Type Field-Effect Transistor
(AREA)
Internal Circuitry In Semiconductor Integrated Circuit Devices
(AREA)
Parts Printed On Printed Circuit Boards
(AREA)
Abstract
As a substrate for a semiconductor device, there is provided a substrate using a metal substrate and having a structure in which the metal substrate includes a metal base formed by a first metal, and a connection metal layer formed by a second metal and covering the metal base, with an anti-diffusion layer formed on the connection metal layer to prevent diffusion of the first metal.
TW93129836A2004-10-012004-10-01Semiconductor device and method of producing the s
TWI355090B
(en)