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Publication of TW200612564ApublicationCriticalpatent/TW200612564A/en
A spin transistor uses a single potential barrier structure to increase a current flocculation rate. The spin transistor includes an emitter, a collector, a base and a base resistor. The emitter is a magneto-resistant device, which can provide different under the control of the externally applied magnetic field. The collector is a passive device used to provide the single potential barrier. The base is placed between the emitter and the collector, and electrically connects the emitter and the collector, respectively. The base resistor connects to the base to provide a bias.