TW200611117A - Method and apparatus of built-in self-diagnosis and repair in a memory with syndrome indentification - Google Patents

Method and apparatus of built-in self-diagnosis and repair in a memory with syndrome indentification

Info

Publication number
TW200611117A
TW200611117A TW093128298A TW93128298A TW200611117A TW 200611117 A TW200611117 A TW 200611117A TW 093128298 A TW093128298 A TW 093128298A TW 93128298 A TW93128298 A TW 93128298A TW 200611117 A TW200611117 A TW 200611117A
Authority
TW
Taiwan
Prior art keywords
syndrome
memory
repair
faulty
diagnosis
Prior art date
Application number
TW093128298A
Other languages
English (en)
Other versions
TWI252397B (en
Inventor
Cheng-Wen Wu
Rei-Fu Huang
Chin-Lung Su
Wen-Ching Wu
Yeong-Jar Chang
Kun Lun Luo
Shen Tien Lin
Original Assignee
Ind Tech Res Inst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ind Tech Res Inst filed Critical Ind Tech Res Inst
Priority to TW093128298A priority Critical patent/TWI252397B/zh
Priority to US11/001,345 priority patent/US7228468B2/en
Application granted granted Critical
Publication of TWI252397B publication Critical patent/TWI252397B/zh
Publication of TW200611117A publication Critical patent/TW200611117A/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/44—Indication or identification of errors, e.g. for repair
    • G11C29/4401—Indication or identification of errors, e.g. for repair for self repair
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/14—Implementation of control logic, e.g. test mode decoders
    • G11C29/16—Implementation of control logic, e.g. test mode decoders using microprogrammed units, e.g. state machines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/44—Indication or identification of errors, e.g. for repair
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/72—Masking faults in memories by using spares or by reconfiguring with optimized replacement algorithms
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C2029/0405—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals comprising complete test loop
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/36—Data generation devices, e.g. data inverters
    • G11C2029/3602—Pattern generator

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
TW093128298A 2004-09-17 2004-09-17 Method and apparatus of built-in self-diagnosis and repair in a memory with syndrome identification TWI252397B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW093128298A TWI252397B (en) 2004-09-17 2004-09-17 Method and apparatus of built-in self-diagnosis and repair in a memory with syndrome identification
US11/001,345 US7228468B2 (en) 2004-09-17 2004-11-30 Method and apparatus of build-in self-diagnosis and repair in a memory with syndrome identification

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW093128298A TWI252397B (en) 2004-09-17 2004-09-17 Method and apparatus of built-in self-diagnosis and repair in a memory with syndrome identification

Publications (2)

Publication Number Publication Date
TWI252397B TWI252397B (en) 2006-04-01
TW200611117A true TW200611117A (en) 2006-04-01

Family

ID=36075370

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093128298A TWI252397B (en) 2004-09-17 2004-09-17 Method and apparatus of built-in self-diagnosis and repair in a memory with syndrome identification

Country Status (2)

Country Link
US (1) US7228468B2 (zh)
TW (1) TWI252397B (zh)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7539977B1 (en) * 2005-01-21 2009-05-26 Xilinx, Inc. Automatic bug isolation in computer programming languages
US7401270B2 (en) * 2005-10-20 2008-07-15 Infineon Technologies Ag Repair of semiconductor memory device via external command
US7454671B2 (en) * 2006-04-05 2008-11-18 Micron Technology, Inc. Memory device testing system and method having real time redundancy repair analysis
US20080010510A1 (en) * 2006-06-19 2008-01-10 Tony Turner Method and system for using multiple memory regions for redundant remapping
US8069377B2 (en) * 2006-06-26 2011-11-29 Micron Technology, Inc. Integrated circuit having memory array including ECC and column redundancy and method of operating the same
JP2008084423A (ja) * 2006-09-27 2008-04-10 Funai Electric Co Ltd 光ディスク装置及びデータ補完方法
US9348730B2 (en) 2007-01-31 2016-05-24 Standard Microsystems Corporation Firmware ROM patch method
US7779312B2 (en) * 2007-08-13 2010-08-17 Faraday Technology Corp. Built-in redundancy analyzer and method for redundancy analysis
EP2201575A2 (en) * 2007-09-18 2010-06-30 Mentor Graphics Corporation Fault diagnosis in a memory bist environment using a linear feedback shift register
TWI375959B (en) * 2007-11-06 2012-11-01 Nat Univ Tsing Hua Method for repairing memory and system thereof
TWI336890B (en) * 2007-12-21 2011-02-01 Nat Univ Tsing Hua Built-in self-repair method for nand flash memory and system thereof
JP2009163790A (ja) * 2007-12-28 2009-07-23 Toshiba Corp オンチップ不良情報解析装置及びオンチップ不良情報解析方法
WO2010102235A1 (en) * 2009-03-05 2010-09-10 Mentor Graphics Corporation Fault diagnosis for non-volatile memories
WO2011037758A1 (en) * 2009-09-28 2011-03-31 Verigy (Singapore) Pte. Ltd. Characterization and repair of integrated circuits
US8650335B2 (en) 2010-06-23 2014-02-11 International Business Machines Corporation Measurement facility for adapter functions
US8566480B2 (en) 2010-06-23 2013-10-22 International Business Machines Corporation Load instruction for communicating with adapters
US8639858B2 (en) 2010-06-23 2014-01-28 International Business Machines Corporation Resizing address spaces concurrent to accessing the address spaces
US9195623B2 (en) 2010-06-23 2015-11-24 International Business Machines Corporation Multiple address spaces per adapter with address translation
US9213661B2 (en) 2010-06-23 2015-12-15 International Business Machines Corporation Enable/disable adapters of a computing environment
US8468284B2 (en) 2010-06-23 2013-06-18 International Business Machines Corporation Converting a message signaled interruption into an I/O adapter event notification to a guest operating system
US8615645B2 (en) 2010-06-23 2013-12-24 International Business Machines Corporation Controlling the selectively setting of operational parameters for an adapter
US8572635B2 (en) 2010-06-23 2013-10-29 International Business Machines Corporation Converting a message signaled interruption into an I/O adapter event notification
US9342352B2 (en) 2010-06-23 2016-05-17 International Business Machines Corporation Guest access to address spaces of adapter
US8621112B2 (en) 2010-06-23 2013-12-31 International Business Machines Corporation Discovery by operating system of information relating to adapter functions accessible to the operating system
US8549182B2 (en) 2010-06-23 2013-10-01 International Business Machines Corporation Store/store block instructions for communicating with adapters
US8635430B2 (en) 2010-06-23 2014-01-21 International Business Machines Corporation Translation of input/output addresses to memory addresses
US8626970B2 (en) 2010-06-23 2014-01-07 International Business Machines Corporation Controlling access by a configuration to an adapter function
US8867286B2 (en) * 2011-12-20 2014-10-21 Industrial Technology Research Institute Repairable multi-layer memory chip stack and method thereof
KR101530587B1 (ko) * 2013-07-31 2015-06-23 주식회사 유니테스트 고속 Ｆａｉｌ Ｍｅｍｏｒｙ 데이터 취득 장치 및 그 방법
US9548137B2 (en) * 2013-12-26 2017-01-17 Intel Corporation Integrated circuit defect detection and repair
US9564245B2 (en) * 2013-12-26 2017-02-07 Intel Corporation Integrated circuit defect detection and repair
US10699796B2 (en) 2014-05-27 2020-06-30 Hewlett Packard Enterprise Development Lp Validation of a repair to a selected row of data
KR102204390B1 (ko) * 2014-09-12 2021-01-18 삼성전자주식회사 빠른 불량 셀 구제 동작의 메모리 장치
WO2017030564A1 (en) * 2015-08-18 2017-02-23 Hewlett Packard Enterprise Development Lp Post package repair for mapping to a memory failure pattern
US10120749B2 (en) 2016-09-30 2018-11-06 Intel Corporation Extended application of error checking and correction code in memory
US10204698B2 (en) * 2016-12-20 2019-02-12 Ampere Computing Llc Method to dynamically inject errors in a repairable memory on silicon and a method to validate built-in-self-repair logic
KR102573833B1 (ko) * 2018-04-18 2023-09-04 에스케이하이닉스 주식회사 메모리에 대한 테스트 회로 및 이를 포함하는 메모리 모듈
TWI655637B (zh) 2018-06-15 2019-04-01 華邦電子股份有限公司 記憶體裝置
US10825543B2 (en) * 2018-07-25 2020-11-03 International Business Machines Corporation Locating failures in memory with redundancy
US10991445B2 (en) 2018-09-06 2021-04-27 Micron Technology, Inc. Memory sub-system including an in-package sequencer to perform error correction and memory testing operations

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6026505A (en) * 1991-10-16 2000-02-15 International Business Machines Corporation Method and apparatus for real time two dimensional redundancy allocation
US6408401B1 (en) * 1998-11-13 2002-06-18 Compaq Information Technologies Group, L.P. Embedded RAM with self-test and self-repair with spare rows and columns
KR100354437B1 (ko) * 2000-01-28 2002-09-28 삼성전자 주식회사 내장 메모리를 위한 자기 복구 회로를 구비하는 집적회로반도체 장치 및 메모리 복구 방법
US6373758B1 (en) * 2001-02-23 2002-04-16 Hewlett-Packard Company System and method of operating a programmable column fail counter for redundancy allocation
US7219271B2 (en) * 2001-12-14 2007-05-15 Sandisk 3D Llc Memory device and method for redundancy/self-repair
EP1465204A3 (en) * 2003-02-12 2005-03-30 Infineon Technologies AG Memory built-in self repair (MBISR) circuits / devices
US7200786B2 (en) * 2003-04-15 2007-04-03 Wu-Tung Cheng Built-in self-analyzer for embedded memory
US6907554B2 (en) * 2003-05-09 2005-06-14 International Business Machines Corporation Built-in self test system and method for two-dimensional memory redundancy allocation

Also Published As

Publication number Publication date
US7228468B2 (en) 2007-06-05
TWI252397B (en) 2006-04-01
US20060064618A1 (en) 2006-03-23

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