TW200610175A - Low resistance n-type contact layer structure for GaN multi-quantum well light emitting diode - Google Patents

Low resistance n-type contact layer structure for GaN multi-quantum well light emitting diode

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Publication number
TW200610175A
TW200610175A TW093126478A TW93126478A TW200610175A TW 200610175 A TW200610175 A TW 200610175A TW 093126478 A TW093126478 A TW 093126478A TW 93126478 A TW93126478 A TW 93126478A TW 200610175 A TW200610175 A TW 200610175A
Authority
TW
Taiwan
Prior art keywords
contact layer
light emitting
emitting diode
quantum well
type contact
Prior art date
Application number
TW093126478A
Other languages
Chinese (zh)
Other versions
TWI249866B (en
Inventor
Liang-Wen Wu
Ru-Chin Tu
Cheng-Tsang Yu
Tzu-Chi Wen
Fen-Ren Chien
Original Assignee
Formosa Epitaxy Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Formosa Epitaxy Inc filed Critical Formosa Epitaxy Inc
Priority to TW93126478A priority Critical patent/TWI249866B/en
Application granted granted Critical
Publication of TWI249866B publication Critical patent/TWI249866B/en
Publication of TW200610175A publication Critical patent/TW200610175A/en

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Abstract

The present invention provides a n-type contact layer structure for GaN multi-quantum well light emitting diode. The n-type contact layer can combine two types of super-lattice structure formed with AlGaN in two different compositions, so as to obtain the n-type GaN contact layer with highly doped density (> 1x10<SP>19</SP> cm<SP>-3</SP>) and low resistance. Moreover, the adjusted composition of Al, In, Ga is employed to obtain the crystal film with lattice constants matched to each other, so as to prevent the cracking caused by heavily doping in the n-type contact layer, and improve the quality of heavily doped contact layer, thereby reducing the difficulty of fabricating n-type ohmic contact, and further greatly decreasing the operational voltage of the entire GaN multi-quantum well light emitting diode.
TW93126478A 2004-09-02 2004-09-02 Low resistance n-type contact layer structure for GaN multi-quantum well light emitting diode TWI249866B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW93126478A TWI249866B (en) 2004-09-02 2004-09-02 Low resistance n-type contact layer structure for GaN multi-quantum well light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW93126478A TWI249866B (en) 2004-09-02 2004-09-02 Low resistance n-type contact layer structure for GaN multi-quantum well light emitting diode

Publications (2)

Publication Number Publication Date
TWI249866B TWI249866B (en) 2006-02-21
TW200610175A true TW200610175A (en) 2006-03-16

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TW93126478A TWI249866B (en) 2004-09-02 2004-09-02 Low resistance n-type contact layer structure for GaN multi-quantum well light emitting diode

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TW (1) TWI249866B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI833091B (en) * 2021-07-12 2024-02-21 錼創顯示科技股份有限公司 Micro light emitting diode chip

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102790146A (en) * 2011-05-18 2012-11-21 展晶科技(深圳)有限公司 Semiconductor light emitting element

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI833091B (en) * 2021-07-12 2024-02-21 錼創顯示科技股份有限公司 Micro light emitting diode chip

Also Published As

Publication number Publication date
TWI249866B (en) 2006-02-21

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