TW200610175A - Low resistance n-type contact layer structure for GaN multi-quantum well light emitting diode - Google Patents
Low resistance n-type contact layer structure for GaN multi-quantum well light emitting diodeInfo
- Publication number
- TW200610175A TW200610175A TW093126478A TW93126478A TW200610175A TW 200610175 A TW200610175 A TW 200610175A TW 093126478 A TW093126478 A TW 093126478A TW 93126478 A TW93126478 A TW 93126478A TW 200610175 A TW200610175 A TW 200610175A
- Authority
- TW
- Taiwan
- Prior art keywords
- contact layer
- light emitting
- emitting diode
- quantum well
- type contact
- Prior art date
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- Led Devices (AREA)
Abstract
The present invention provides a n-type contact layer structure for GaN multi-quantum well light emitting diode. The n-type contact layer can combine two types of super-lattice structure formed with AlGaN in two different compositions, so as to obtain the n-type GaN contact layer with highly doped density (> 1x10<SP>19</SP> cm<SP>-3</SP>) and low resistance. Moreover, the adjusted composition of Al, In, Ga is employed to obtain the crystal film with lattice constants matched to each other, so as to prevent the cracking caused by heavily doping in the n-type contact layer, and improve the quality of heavily doped contact layer, thereby reducing the difficulty of fabricating n-type ohmic contact, and further greatly decreasing the operational voltage of the entire GaN multi-quantum well light emitting diode.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW93126478A TWI249866B (en) | 2004-09-02 | 2004-09-02 | Low resistance n-type contact layer structure for GaN multi-quantum well light emitting diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW93126478A TWI249866B (en) | 2004-09-02 | 2004-09-02 | Low resistance n-type contact layer structure for GaN multi-quantum well light emitting diode |
Publications (2)
Publication Number | Publication Date |
---|---|
TWI249866B TWI249866B (en) | 2006-02-21 |
TW200610175A true TW200610175A (en) | 2006-03-16 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW93126478A TWI249866B (en) | 2004-09-02 | 2004-09-02 | Low resistance n-type contact layer structure for GaN multi-quantum well light emitting diode |
Country Status (1)
Country | Link |
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TW (1) | TWI249866B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI833091B (en) * | 2021-07-12 | 2024-02-21 | 錼創顯示科技股份有限公司 | Micro light emitting diode chip |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102790146A (en) * | 2011-05-18 | 2012-11-21 | 展晶科技(深圳)有限公司 | Semiconductor light emitting element |
-
2004
- 2004-09-02 TW TW93126478A patent/TWI249866B/en active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI833091B (en) * | 2021-07-12 | 2024-02-21 | 錼創顯示科技股份有限公司 | Micro light emitting diode chip |
Also Published As
Publication number | Publication date |
---|---|
TWI249866B (en) | 2006-02-21 |
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