TW200609885A - High-reliability shift circuit using amorphous silicon thin-film transistor - Google Patents
High-reliability shift circuit using amorphous silicon thin-film transistorInfo
- Publication number
- TW200609885A TW200609885A TW093127697A TW93127697A TW200609885A TW 200609885 A TW200609885 A TW 200609885A TW 093127697 A TW093127697 A TW 093127697A TW 93127697 A TW93127697 A TW 93127697A TW 200609885 A TW200609885 A TW 200609885A
- Authority
- TW
- Taiwan
- Prior art keywords
- shift circuit
- amorphous silicon
- film transistor
- silicon thin
- transistor
- Prior art date
Links
Landscapes
- Shift Register Type Memory (AREA)
Abstract
This invention relates to a high-reliability shift circuit using amorphous silicon thin film transistor. It utilizes two phase-opposite clock signals to control the shift circuit operation mechanism. The biasing connection of every transistor in the shift circuit enables the transistor in the drive condition of alternating between negative bias and positive bias. It restrains the critical voltage shift, and makes the critical voltage not to be overly increased with the increase of using time. Eventually, it increases the life of the amorphous silicon thin film transistor. Therefore, it effectively extends the using time of the shift circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW93127697A TWI284881B (en) | 2004-09-14 | 2004-09-14 | High-reliability shift circuit using amorphous silicon thin-film transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW93127697A TWI284881B (en) | 2004-09-14 | 2004-09-14 | High-reliability shift circuit using amorphous silicon thin-film transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200609885A true TW200609885A (en) | 2006-03-16 |
| TWI284881B TWI284881B (en) | 2007-08-01 |
Family
ID=39446009
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW93127697A TWI284881B (en) | 2004-09-14 | 2004-09-14 | High-reliability shift circuit using amorphous silicon thin-film transistor |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI284881B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8743044B2 (en) | 2006-09-29 | 2014-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| TWI492207B (en) * | 2008-11-14 | 2015-07-11 | Semiconductor Energy Lab | Liquid crystal display device |
| TWI549115B (en) * | 2012-08-21 | 2016-09-11 | 三星顯示器有限公司 | Emission control driver and organic light emitting display device having the same |
| US10013919B2 (en) | 2013-12-30 | 2018-07-03 | Kunshan New Flat Panel Display Technology Center Co. Ltd. | Scanning drive circuit and organic light-emitting display |
-
2004
- 2004-09-14 TW TW93127697A patent/TWI284881B/en not_active IP Right Cessation
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10297618B2 (en) | 2006-09-29 | 2019-05-21 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| US8902145B2 (en) | 2006-09-29 | 2014-12-02 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| TWI470602B (en) * | 2006-09-29 | 2015-01-21 | Semiconductor Energy Lab | Semiconductor device |
| TWI470601B (en) * | 2006-09-29 | 2015-01-21 | Semiconductor Energy Lab | Semiconductor device |
| US8743044B2 (en) | 2006-09-29 | 2014-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| US11967598B2 (en) | 2006-09-29 | 2024-04-23 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| TWI562112B (en) * | 2006-09-29 | 2016-12-11 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
| US10930683B2 (en) | 2006-09-29 | 2021-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| TWI585731B (en) * | 2006-09-29 | 2017-06-01 | 半導體能源研究所股份有限公司 | Semiconductor device |
| US9842861B2 (en) | 2006-09-29 | 2017-12-12 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| TWI492207B (en) * | 2008-11-14 | 2015-07-11 | Semiconductor Energy Lab | Liquid crystal display device |
| US10901283B2 (en) | 2008-11-14 | 2021-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| US11604391B2 (en) | 2008-11-14 | 2023-03-14 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| US12013617B2 (en) | 2008-11-14 | 2024-06-18 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| USRE48358E1 (en) | 2012-08-21 | 2020-12-15 | Samsung Display Co., Ltd. | Emission control driver and organic light emitting display device having the same |
| US9548026B2 (en) | 2012-08-21 | 2017-01-17 | Samsung Display Co., Ltd. | Emission control driver and organic light emitting display device having the same |
| TWI549115B (en) * | 2012-08-21 | 2016-09-11 | 三星顯示器有限公司 | Emission control driver and organic light emitting display device having the same |
| US10013919B2 (en) | 2013-12-30 | 2018-07-03 | Kunshan New Flat Panel Display Technology Center Co. Ltd. | Scanning drive circuit and organic light-emitting display |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI284881B (en) | 2007-08-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |