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Application filed by Cleavage Entpr Co LtdfiledCriticalCleavage Entpr Co Ltd
Priority to TW93123178ApriorityCriticalpatent/TWI235510B/en
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Publication of TWI235510BpublicationCriticalpatent/TWI235510B/en
Publication of TW200607110ApublicationCriticalpatent/TW200607110A/en
The present invention provides a light emitting diode testing structure and its manufacturing method. The method includes first providing a substrate and forming an epitaxy layer on the upper surface of the substrate; next, forming a metal layer on the upper surface of the epitaxy layer and employing polish upon the substrate; after polishing, etching the substrate to remove the substrate while retaining the epitaxy layer and the metal layer; then, then jointing a plurality of electrodes to the lower surface of the epitaxy layer for reversing the epitaxy layer and the metal layer to make the metal layer be located at the bottom; and finally forming a testing layer at the lower surface of the metal layer, thereby forming a light emitting diode testing structure. The present invention can increase the brightness of the light emitting diode, reduce the cost and increase the heat dissipating capability and testing yield of the device.
TW93123178A2004-08-032004-08-03Light emitting diode testing structure and its manufacturing method
TWI235510B
(en)