TW200605327A - Magnetic storage device - Google Patents

Magnetic storage device

Info

Publication number
TW200605327A
TW200605327A TW094106578A TW94106578A TW200605327A TW 200605327 A TW200605327 A TW 200605327A TW 094106578 A TW094106578 A TW 094106578A TW 94106578 A TW94106578 A TW 94106578A TW 200605327 A TW200605327 A TW 200605327A
Authority
TW
Taiwan
Prior art keywords
film
contact
magnetic
ferromagnetic
storage device
Prior art date
Application number
TW094106578A
Other languages
Chinese (zh)
Inventor
Tatsuya Kunikiyo
Original Assignee
Renesas Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Tech Corp filed Critical Renesas Tech Corp
Publication of TW200605327A publication Critical patent/TW200605327A/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/10—Inductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Abstract

The present invention relates to a magnetic storage device, into which incorrect information are difficult to be written, characterized in that a magnetic tunnel junction element(1) comprises a contact(3a), a free magnetic film(30), which covers the periphery of the contact(3a) with the direction of magnetization changed according to the direction of magnetic field, a fixed magnetic film(29), which covers the periphery of the contact(3a) with the direction of magnetization fixed, and an insulating film(24), which is disposed between the free magnetic film(30) and the fixed magnetic film(29), wherein the free magnetic film(30), the insulating film(24) and the fixed magnetic film(29) are laminated in the radial direction of the contact(3a), and the free magnetic film(30) comprises a ferromagnetic film(27), an anti-ferromagnetic film(26) and a ferromagnetic film(25), which are laminated in the radial direction of the contact(3a), wherein the anti-ferromagnetic film(26) is disposed between the ferromagnetic film(27) and the ferromagnetic film(25).
TW094106578A 2004-03-25 2005-03-04 Magnetic storage device TW200605327A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004089718A JP2005277189A (en) 2004-03-25 2004-03-25 Magnetic storage device

Publications (1)

Publication Number Publication Date
TW200605327A true TW200605327A (en) 2006-02-01

Family

ID=35056483

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094106578A TW200605327A (en) 2004-03-25 2005-03-04 Magnetic storage device

Country Status (3)

Country Link
JP (1) JP2005277189A (en)
TW (1) TW200605327A (en)
WO (1) WO2005093835A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8665629B2 (en) * 2007-09-28 2014-03-04 Qimonda Ag Condensed memory cell structure using a FinFET
JP5542550B2 (en) * 2010-07-08 2014-07-09 株式会社東芝 Resistance change memory
JP5555211B2 (en) * 2011-09-06 2014-07-23 株式会社東芝 Semiconductor device and manufacturing method thereof
JP5694129B2 (en) * 2011-11-29 2015-04-01 株式会社東芝 Semiconductor device and manufacturing method thereof
JP6121961B2 (en) * 2014-09-17 2017-04-26 株式会社東芝 Resistance change memory
CN104766621B (en) * 2015-04-20 2017-04-26 北京航空航天大学 Stress control-based magnetic logic device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001156357A (en) * 1999-09-16 2001-06-08 Toshiba Corp Magneto-resistance effect element and magnetic recording element
JP3884312B2 (en) * 2002-03-28 2007-02-21 株式会社東芝 Magnetic storage
US6664582B2 (en) * 2002-04-12 2003-12-16 International Business Machines Corporation Fin memory cell and method of fabrication
US6888187B2 (en) * 2002-08-26 2005-05-03 International Business Machines Corporation DRAM cell with enhanced SER immunity

Also Published As

Publication number Publication date
JP2005277189A (en) 2005-10-06
WO2005093835A1 (en) 2005-10-06

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