TW200605186A - - Google Patents
Info
- Publication number
- TW200605186A TW200605186A TW94122767A TW94122767A TW200605186A TW 200605186 A TW200605186 A TW 200605186A TW 94122767 A TW94122767 A TW 94122767A TW 94122767 A TW94122767 A TW 94122767A TW 200605186 A TW200605186 A TW 200605186A
- Authority
- TW
- Taiwan
Links
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10403314 | 2004-07-08 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200605186A true TW200605186A (cs) | 2006-02-01 |
| TWI289325B TWI289325B (en) | 2007-11-01 |
Family
ID=38220482
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW94122616A TWI267896B (en) | 2004-07-08 | 2005-07-04 | Process for producing a layer arrangement and layer arrangement |
| TW94122767A TWI289325B (en) | 2004-07-08 | 2005-07-05 | Planar double-gate transistor and method for fabricating a planar double-gate transistor |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW94122616A TWI267896B (en) | 2004-07-08 | 2005-07-04 | Process for producing a layer arrangement and layer arrangement |
Country Status (1)
| Country | Link |
|---|---|
| TW (2) | TWI267896B (cs) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI595650B (zh) * | 2015-05-21 | 2017-08-11 | 蘇烱光 | 適應性雙閘極金氧半場效電晶體 |
-
2005
- 2005-07-04 TW TW94122616A patent/TWI267896B/zh not_active IP Right Cessation
- 2005-07-05 TW TW94122767A patent/TWI289325B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| TWI267896B (en) | 2006-12-01 |
| TWI289325B (en) | 2007-11-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |