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Priority to TW93119773ApriorityCriticalpatent/TWI247348B/en
Publication of TW200601436ApublicationCriticalpatent/TW200601436A/en
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Publication of TWI247348BpublicationCriticalpatent/TWI247348B/en
The present invention provides a process for 2-D buckled SiGe quantum wells, which includes the following steps: providing a first substrate; growing a semiconductor layer on the first substrate, and the material of the semiconductor layer is different from that of the first substrate; growing a first capping layer on the semiconductor layer to form a first wafer structure; conducting ion implantation on the first wafer structure to form an ion implantation layer; providing a second substrate; growing a second capping layer on the second substrate to form a second wafer structure; aligning the first and the second capping layers as face-to-face and bonding the first and the second wafer structures; conducting the first high temperature process to separate the first and the second wafer structures at the ion implantation layer; and, conducting the second high temperature process to generate the 2-D buckled SiGe quantum wells on the separated surface.
TW93119773A2004-06-302004-06-30Process for two-dimensional buckled quantum well
TWI247348B
(en)