TW200601338A - Operation scheme with high work function gate and charge balancing for charge trapping non-volatile memory - Google Patents
Operation scheme with high work function gate and charge balancing for charge trapping non-volatile memoryInfo
- Publication number
- TW200601338A TW200601338A TW093136825A TW93136825A TW200601338A TW 200601338 A TW200601338 A TW 200601338A TW 093136825 A TW093136825 A TW 093136825A TW 93136825 A TW93136825 A TW 93136825A TW 200601338 A TW200601338 A TW 200601338A
- Authority
- TW
- Taiwan
- Prior art keywords
- charge
- threshold voltage
- memory device
- work function
- high work
- Prior art date
Links
Landscapes
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Abstract
A memory device with a charge trapping layer has multiple bias arrangements to cange the threshold voltage of the memory device and record digital signal, 0 or 1, through the change of the threshold voltage. In the conventional memory device, multiple cycles of applying the bias arrangements lowering and raising a threshold voltage leave a distribution of charge in the charge trapping layer. The distribution of charge interferes with the achievable lowest threshold voltage. This distribution of charge is balanced by applying a charge balancing bias arrangement, and thus the operative range of the lowest threshold voltage is recoved. The memory device having a high work function gate can reduce the lowest threshold voltage in the equilibrium state of the charge balancing bias arrangement.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/876,374 US7164603B2 (en) | 2004-04-26 | 2004-06-24 | Operation scheme with high work function gate and charge balancing for charge trapping non-volatile memory |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200601338A true TW200601338A (en) | 2006-01-01 |
TWI250526B TWI250526B (en) | 2006-03-01 |
Family
ID=35718919
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW093136825A TWI250526B (en) | 2004-06-24 | 2004-11-30 | Operation scheme with high work function gate and charge balancing for charge trapping non-volatile memory |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN100391000C (en) |
TW (1) | TWI250526B (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI572015B (en) * | 2007-05-25 | 2017-02-21 | 賽普拉斯半導體公司 | Nonvolatile charge trap memory device having a deuterated layer in a multi-layer charge-trapping region |
TWI660271B (en) * | 2018-04-24 | 2019-05-21 | 群聯電子股份有限公司 | Trim command recording method, memory control circuit unit and memory storage apparatus |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102298971B (en) * | 2011-08-29 | 2014-05-21 | 南京大学 | Operation method for high-density multilevel storage of non-volatile flash memory |
US10049750B2 (en) * | 2016-11-14 | 2018-08-14 | Micron Technology, Inc. | Methods including establishing a negative body potential in a memory cell |
CN110442300B (en) * | 2018-05-03 | 2022-12-13 | 群联电子股份有限公司 | Sorting instruction recording method, memory control circuit unit and memory device |
CN111370046B (en) * | 2020-03-19 | 2022-04-19 | 中国科学院微电子研究所 | Programming method and programming system of three-dimensional memory |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IL125604A (en) * | 1997-07-30 | 2004-03-28 | Saifun Semiconductors Ltd | Non-volatile electrically erasable and programmble semiconductor memory cell utilizing asymmetrical charge |
US6436768B1 (en) * | 2001-06-27 | 2002-08-20 | Advanced Micro Devices, Inc. | Source drain implant during ONO formation for improved isolation of SONOS devices |
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2004
- 2004-11-30 TW TW093136825A patent/TWI250526B/en active
-
2005
- 2005-03-01 CN CNB2005100510700A patent/CN100391000C/en active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI572015B (en) * | 2007-05-25 | 2017-02-21 | 賽普拉斯半導體公司 | Nonvolatile charge trap memory device having a deuterated layer in a multi-layer charge-trapping region |
TWI660271B (en) * | 2018-04-24 | 2019-05-21 | 群聯電子股份有限公司 | Trim command recording method, memory control circuit unit and memory storage apparatus |
Also Published As
Publication number | Publication date |
---|---|
TWI250526B (en) | 2006-03-01 |
CN1713391A (en) | 2005-12-28 |
CN100391000C (en) | 2008-05-28 |
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