TW200600968A - Resist composition and method for forming resist pattern - Google Patents

Resist composition and method for forming resist pattern

Info

Publication number
TW200600968A
TW200600968A TW094115401A TW94115401A TW200600968A TW 200600968 A TW200600968 A TW 200600968A TW 094115401 A TW094115401 A TW 094115401A TW 94115401 A TW94115401 A TW 94115401A TW 200600968 A TW200600968 A TW 200600968A
Authority
TW
Taiwan
Prior art keywords
resist
forming
resist composition
resist pattern
composition
Prior art date
Application number
TW094115401A
Other languages
Chinese (zh)
Other versions
TWI329785B (en
Inventor
Yusuke Nakagawa
Shinichi Hidesaka
Kazuhiko Nakayama
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200600968A publication Critical patent/TW200600968A/en
Application granted granted Critical
Publication of TWI329785B publication Critical patent/TWI329785B/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

A resist composition comprises an organic solvent (C) including a methyl-n-amylketone in which a base resin component (A) and an oxime sulfonate type acid generating agent (B) are dissolved.
TW94115401A 2004-05-31 2005-05-12 Resist composition and method for forming resist pattern TWI329785B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004161880 2004-05-31
JP2004203115 2004-07-09
JP2004259065A JP2006047940A (en) 2004-05-31 2004-09-06 Resist composition and method for forming resist pattern

Publications (2)

Publication Number Publication Date
TW200600968A true TW200600968A (en) 2006-01-01
TWI329785B TWI329785B (en) 2010-09-01

Family

ID=35451027

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94115401A TWI329785B (en) 2004-05-31 2005-05-12 Resist composition and method for forming resist pattern

Country Status (3)

Country Link
JP (1) JP2006047940A (en)
TW (1) TWI329785B (en)
WO (1) WO2005116762A1 (en)

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0571330B1 (en) * 1992-05-22 1999-04-07 Ciba SC Holding AG High-resolution photoresist with enhanced sensitivity for I-line exposure
JP3665166B2 (en) * 1996-07-24 2005-06-29 東京応化工業株式会社 Chemically amplified resist composition and acid generator used therefor
JP3931482B2 (en) * 1999-06-02 2007-06-13 住友化学株式会社 Chemically amplified negative resist composition
JP4365049B2 (en) * 2000-10-20 2009-11-18 富士フイルム株式会社 Pattern formation method using chemically amplified positive resist composition for thermal flow
JP3516653B2 (en) * 2000-12-15 2004-04-05 シャープ株式会社 Method for manufacturing semiconductor device
JP4779079B2 (en) * 2001-04-09 2011-09-21 丸一株式会社 Drain trap
JP4057807B2 (en) * 2001-12-03 2008-03-05 東京応化工業株式会社 Fine resist pattern forming method
JP4120437B2 (en) * 2002-03-29 2008-07-16 Ｊｓｒ株式会社 Compound having sulfonyl structure, radiation-sensitive acid generator, positive-type radiation-sensitive resin composition, and negative-type radiation-sensitive resin composition using the same
JP2004103055A (en) * 2002-09-05 2004-04-02 Sony Corp Cartridge storing case
CN1698016A (en) * 2003-05-20 2005-11-16 东京应化工业株式会社 Chemically amplified positive photo resist composition and method for forming resist pattern
JP4313611B2 (en) * 2003-05-22 2009-08-12 東京応化工業株式会社 Chemically amplified positive photoresist composition and method for forming resist pattern
JP4173413B2 (en) * 2003-08-28 2008-10-29 東京応化工業株式会社 Method for forming resist pattern for lift-off
JP4347110B2 (en) * 2003-10-22 2009-10-21 東京応化工業株式会社 Positive resist composition for electron beam or EUV

Also Published As

Publication number Publication date
JP2006047940A (en) 2006-02-16
TWI329785B (en) 2010-09-01
WO2005116762A1 (en) 2005-12-08

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