200541064 五、發明說明（1) 【發明所屬之技術領域】 本發明係有關於一種影像感測晶片，特別係有關於_ 種覆晶型態可反向感測之影像感測晶片。 【先前技術】 目前習知用來將光轉換為電子訊號之電路元件有電荷 耦合裝置（Charge Coup 1 ed Devi ce，CCD)或互補式金屬氧 化半導體（Complementary Metal Oxide Semiconductor， CMOS)，然而CCD受限於其價位、體積以及耗電等問題，使 得CMOS的發展更加迅速，而其應用範圍包含數位相機 (DSC)、數位攝影機、手機及個人數位助理（pda)等等。 一種習知之影像感測晶片，如美國專利公告第 6,635,912號「CMOS影像感測器及其製造方法」所揭示 者’其係在一石夕基板上形成一感光二極體（photodiode)及 至少一M0S(Metal Oxide Semiconductor)電晶體，該感光 二極體之感測面係被一多層抗反射薄膜覆蓋，該多層抗反 射薄膜係由二種具有不同折射率之絕緣薄膜所形成，且不 覆蓋至该M0S電晶體’該M0S電晶體係具有一擴散層及一碎 化物層’該石夕化物層係形成於該擴散層上，該Μ 〇 s電晶體 係與該感光二極體電性連接，然而該影像感測晶片仍須進 行第一層次（First Level)電子構裝。 一種習知之影像感測晶片封裝，如第1圖所示，其係 包含一影像感測晶片1 0、一陶瓷基板20與一透明玻璃4〇， 該影像感測晶片1 0係設於該陶究基板2 0之凹槽2 1，該影像 感測晶片1 0之主動面11係形成有複數個銲墊1 2與一感須區200541064 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to an image sensing chip, and more particularly to an image sensing chip with _ flip-chip type that can be reversely sensed. [Prior art] At present, circuit elements conventionally used to convert light into electronic signals include a charge coupled device (Charge Coup 1 ed Devi ce) or a complementary metal oxide semiconductor (Complementary Metal Oxide Semiconductor, CMOS). Limited to its price, size, and power consumption, the development of CMOS has been more rapid, and its applications include digital cameras (DSC), digital cameras, mobile phones, and personal digital assistants (PDAs). A conventional image sensing chip, as disclosed in U.S. Patent Publication No. 6,635,912 "CMOS image sensor and manufacturing method thereof", is a photodiode and at least one MOS formed on a stone substrate. (Metal Oxide Semiconductor) transistor, the sensing surface of the photodiode is covered by a multi-layer anti-reflection film, the multi-layer anti-reflection film is formed by two kinds of insulating films with different refractive indexes, and does not cover The MOS transistor 'the MOS transistor system has a diffusion layer and a fragmentation layer' the petrochemical layer system is formed on the diffusion layer, the MOs transistor system is electrically connected to the photodiode, However, the image sensing chip still needs to be first-level electronically assembled. A conventional image sensing chip package, as shown in FIG. 1, includes an image sensing chip 10, a ceramic substrate 20, and a transparent glass 40. The image sensing chip 10 is disposed in the ceramic. Investigating the groove 21 of the substrate 20, the active surface 11 of the image sensing chip 10 is formed with a plurality of pads 12 and a sensing area
第7頁 200541064 _____ 五、發明說明（2) 1 3，該感測區1 3係形成有複數個感測元件14，該些銲墊1 2 之接合面與該些感測元件1 4之感測端1 5係朝向該透明玻璃 4 0，該些銲墊1 2係以複數個銲線3 0電性連接該陶瓷基板 20，該透明玻璃4〇係設於該陶瓷基板20之凹槽21上方，並 覆蓋該影像感測晶片1 0，以密封保護該影像感測晶片1 〇， 防止水氣或塵粒侵入，在感測時，光線1係先穿過該透明 玻璃4 0 ’再經由該影像感測晶片1 〇將光訊號轉變為電子訊 號，而電子訊號須透過該些銲線30以及該陶瓷基板20才能 傳遞至電路基板50，該影像感測晶片1 0係無法直接覆晶於 一般之電路基板5〇上。 【發明内容】 本發明之主要目的係在於提供一種覆晶型態影像感測 晶片’利用複數個MOS(Metal Oxide Semiconductor)電晶 體、複數個感光二極體（pho tod i ode )及一隔離層形成於一 平坦化層’該平坦化層係直接形成於一透光基板，且該些 感光二極體之感測端係朝向該透光基板，使得該影像感測 晶片可直接覆晶於電路基板。 依本發明之覆晶型態影像感測晶片，其係包含一透光 基板’例如玻璃片，該透光基板係具有一元件形成表面， 該元件形成表面係形成有一第一圖案化金屬層及一平坦化 層’該平坦化層係覆蓋該第一圖案化金屬層，該平坦化層 上係形成有複數個M〇S電晶體、複數個感光二極體及一隔 離層’作為該影像感測晶片之感測端，用以將光訊號轉換 為電子訊號，該隔離層係隔離該些M〇s電晶體與該些感光 第8頁 200541064 五、發明說明（3) 二極體’該M0S電晶體、該些感光二極體及該隔離層上係 設有一保護層及一第二圖案化金屬層，該第二圖案化金屬 層上係形成有複數個凸塊，該些凸塊係電性連接該第一圖 案化金屬層，用以傳遞該影像感測晶片之訊號。 【實施方式】 參閱所附圖式，本發明將列舉以下之實施例說明。 依本發明之第一具體實施例，請參閱第2圖，一種覆 晶型態影像感測晶片1 00，其係可為一種互補式金屬氧化 半導體（Complementary Metal Oxide Semiconductor， CMOS)之影像感測晶片，該影像感測晶片1 〇〇包含一透光基 板110，該透光基板110可為透光玻璃片或透光塑膠板，該 透光基板11 0係具有一元件形成表面111，該元件形成表面 111係形成有一第一圖案化金屬層120及一平坦化層130 , 該第一圖案化金屬層1 2 0係用來傳遞該影像感測晶片1 〇 〇之 訊號，該平坦化層1 30係覆蓋該第一圖案化金屬層1 20，該 平坦化層130上係形成有複數個M0S( Metal Oxide Semiconductor)電晶體1 40、複數個感光二極體1 50 (photodiode)及一隔離層160，，用以將光訊號轉換為電 子訊號，每一M0S電晶體140係具有一源極141(Source)、 一没極142(Drain)與一閘極143(Gate)，在本實施例中， 該源極141 (Source )與該没極142 (Drain)係形成於一ρ型井 170(p-type well)，每一感光二極體150係具有一感測端 15 0a，該些感測端1 50a係朝向該透光基板11〇，該些感光Page 7 200541064 _____ V. Description of the invention (2) 1 3, the sensing area 1 3 is formed with a plurality of sensing elements 14, the joint surfaces of the pads 12 and the sensing elements 14 The measuring end 15 is oriented toward the transparent glass 40, the pads 12 are electrically connected to the ceramic substrate 20 with a plurality of bonding wires 30, and the transparent glass 40 is provided in the groove 21 of the ceramic substrate 20. It covers the image sensing chip 10 above, to seal and protect the image sensing chip 10, to prevent moisture or dust particles from invading. During sensing, the light 1 passes through the transparent glass 40 ′ and then passes through. The image sensing chip 10 converts the optical signal into an electronic signal, and the electronic signal must be transmitted to the circuit substrate 50 through the bonding wires 30 and the ceramic substrate 20. The image sensing chip 10 cannot be directly crystallized on General circuit board 50. [Summary of the Invention] The main object of the present invention is to provide a flip-chip type image sensing chip 'using a plurality of MOS (Metal Oxide Semiconductor) transistors, a plurality of photodiodes and an isolation layer. Formed on a flattening layer 'The flattening layer is directly formed on a light-transmitting substrate, and the sensing ends of the photodiodes face the light-transmitting substrate, so that the image sensing chip can be directly crystallized on the circuit Substrate. The flip-chip type image sensing wafer according to the present invention includes a light-transmitting substrate, such as a glass sheet. The light-transmitting substrate has an element forming surface, and the element forming surface is formed with a first patterned metal layer and A planarization layer 'The planarization layer covers the first patterned metal layer, and a plurality of MOS transistors, a plurality of photodiodes, and an isolation layer are formed on the planarization layer as the image sense. The sensing end of the test chip is used to convert the optical signal into an electronic signal. The isolation layer isolates the Mos transistors from the photosensitivities. Page 8 200541064 V. Description of the invention (3) Diode 'The M0S A transistor, a photodiode, and the isolation layer are provided with a protective layer and a second patterned metal layer. A plurality of bumps are formed on the second patterned metal layer. The bumps are electrically The first patterned metal layer is electrically connected to transmit the signal of the image sensing chip. [Embodiment] With reference to the drawings, the present invention will be described by the following embodiments. According to the first specific embodiment of the present invention, please refer to FIG. 2, a flip-chip type image sensing chip 100, which can be an image sensor of a complementary metal oxide semiconductor (CMOS) Wafer, the image sensing wafer 100 includes a light-transmitting substrate 110, which may be a light-transmitting glass sheet or a light-transmitting plastic plate, and the light-transmitting substrate 110 has a component forming surface 111, the component The forming surface 111 is formed with a first patterned metal layer 120 and a planarization layer 130. The first patterned metal layer 120 is used to transmit a signal of the image sensing wafer 1000, and the planarization layer 1 30 series covers the first patterned metal layer 1 20, and a plurality of MOS (Metal Oxide Semiconductor) transistors 1 40, a plurality of photodiodes 1 50 (photodiode), and an isolation layer are formed on the planarization layer 130. 160, for converting an optical signal into an electronic signal. Each MOS transistor 140 has a source 141 (source), a 142 (Drain), and a gate 143 (Gate). In this embodiment, , The source 141 (Source) and the immutable 142 (Dr ain) is formed in a p-type well 170, and each photodiode 150 has a sensing end 150a, and the sensing ends 150a are oriented toward the light transmitting substrate 110. Light sensitive
V 二極體150 係由一P 型擴散層151(p-type diffusionThe V diode 150 is formed by a p-type diffusion layer 151 (p-type diffusion
第9頁 200541064_ 五、發明說明（4) layer)及一η 型擴散層152( n-type diffusion layer)所組 成，遠隔離層160係為一場氧化層（field oxide film)， 並形成於該平坦化層130與該p型井170之間，以隔離該些 M0S電晶體140與該些感光二極體15〇，該p型井170上係設 有一保護層180及一第二圖案化金屬層190，該保護層18〇 係覆蓋該第二圖案化金屬層1 9 〇，用以保護該第二圖案化 金屬層190 ’該第二圖案化金屬層190上係形成有複數個凸 塊200，該第二圖案化金屬層19〇係與該第一圖案化金屬層 120電性連接，使得該些凸塊2 〇〇與該第一圖案化金屬層 1 2 0電性連接，此外該些凸塊2 〇 〇係可直接接合於該第一圖 案化金屬層1 2 0 ’用以傳遞該影像感測晶片1 〇 〇之訊號。麵丨 請再參閱第3圖，由於該影像感測晶片1 〇 〇之感測元件 (即感光一極體1 5 0 )之感測端1 5 0 a係朝向該透米基板11 〇之 元件形成表面11 1，光線1係可穿透該透光基板丨1〇，使得 該感光二極體1 5 0與該MO S電晶體1 4 0作動，將光訊號轉換 成電子訊號，故該影像感測晶片1 〇〇可直接覆晶接合於一 不透光之電路基板3 〇 〇，且電子訊號經由該第一圖案化金 屬層120、該第二圖案化金屬層19〇與該些凸塊2〇〇傳遞至 該電路基板3 00。 本發明之保護範圍當視後附之申請專利範圍所界定者j 為準，任何熟知此項技藝者，在不脫離本發明之精神和範 圍内所作之任何變化與修改，均屬於本發明之保護範圍。Page 9 200541064_ 5. Description of the invention (4) layer) and an n-type diffusion layer 152 (n-type diffusion layer), the far isolation layer 160 is a field oxide film, and is formed on the flat Between the p-type well 130 and the p-type well 170 to isolate the MOS transistors 140 and the photodiodes 150, a protective layer 180 and a second patterned metal layer are provided on the p-type well 170. 190. The protective layer 180 covers the second patterned metal layer 190 to protect the second patterned metal layer 190. A plurality of bumps 200 are formed on the second patterned metal layer 190. The second patterned metal layer 19 is electrically connected to the first patterned metal layer 120, so that the bumps 2000 are electrically connected to the first patterned metal layer 120, and in addition, the bumps are electrically connected. The block 200 can be directly bonded to the first patterned metal layer 1220 'to transmit the signal of the image sensing chip 100. Please refer to FIG. 3 again, because the sensing element 1 500 of the image sensing chip 1 00 (the photosensitive end 1 150) is a component facing the transparent substrate 11 0 The surface 11 1 is formed, and the light 1 can penetrate the transparent substrate 丨 10, so that the photodiode 150 and the MO S transistor 1 40 act to convert the optical signal into an electronic signal, so the image The sensing wafer 100 can be directly flip-chip bonded to an opaque circuit substrate 300, and the electronic signal passes through the first patterned metal layer 120, the second patterned metal layer 19, and the bumps. 200 is transferred to the circuit board 300. The scope of protection of the present invention shall be determined by the scope of the appended patent application. Any changes and modifications made by those skilled in the art without departing from the spirit and scope of the present invention shall be protected by the present invention. range.
200541064200541064
圖式簡單說明 【圖式簡單說明】 第1圖：習知之影像感蜊曰曰 第2圖··依據本發明之〜之截面示意圖； 感測晶片之截面示意圖；及- 例一種覆晶型態影像 第3圖：依據本發明之—具 、 測晶片覆晶接合於一電路基例該覆晶型態影像感 戰面示意圖。 元件符號簡單說明： 1 光線 10 影像感測晶片11 12 15 50 薛塾 感測端 電路基板Brief Description of the Drawings [Simplified Illustration of the Drawings] Figure 1: The conventional image sensing clam, Figure 2 ... A cross-sectional schematic diagram of the ~ according to the present invention; a cross-sectional schematic diagram of a sensing wafer; and-an example of a flip-chip type Image Figure 3: Schematic diagram of the image-sensing surface of the flip-chip type in accordance with the present invention, with the chip flip-chip bonded to a circuit base. Simple description of the component symbols: 1 light 10 image sensor chip 11 12 15 50 Xue Yan sensor terminal circuit board
感測7〇件 凹槽 透明破璃 元件形成表面 140 MOS電晶艘 141 源極 143 閘極 142 >及極 150 感光二極體 150 a 感测端 151 152 η型擴散層 P型擴散層 160 隔離層 170 P型井 180 190 第二圖案化金屬層 保護層 200 凸塊 V 13 感測區 μ 2〇 陶瓷基板 21 3 0 鲜線 40 1 〇〇 影像感測晶片 11 〇 透光基板 in 120 第一圖案化金屬層 130 平坦化層 200541064 圖式簡單說明 300 電路基板 第12頁Sensing 70 pieces of recessed transparent glass-breaking element forming surface 140 MOS transistor 141 source 143 gate 142 > and pole 150 photodiode 150 a sensing end 151 152 η-type diffusion layer P-type diffusion layer 160 Isolation layer 170 P-type well 180 190 Second patterned metal layer protective layer 200 Bump V 13 Sensing area μ 2〇 Ceramic substrate 21 3 0 Fresh line 40 1 〇〇Image sensing wafer 11 〇Transparent substrate in 120 No. A patterned metal layer 130 and a planarization layer 200541064 A brief illustration of a circuit board 300 page 12