TW200535992A - Method for creating original disk for information recording medium, device for irradiating original disk for information recording medium, method for manufacturing information recording medium and information recording medium - Google Patents

Abstract

To provide a device for irradiating an original disk for an information recording medium of which the recording position accuracy is enhanced by electron irradiation. The original disk for information recording medium in which variation in groove width and noise levels of recording tracks of the whole original disk 21 are reduced is created by the device 100 for irradiating the original disk for the information recording medium equipped with an electron irradiation means for irradiating the original disk 21 having an electron sensitive resist thin film in which polarity change arises by the electron irradiation with electron beam 19 whose amount is fixed per unit time, a driving means for holding and rotating the original disk 21, a variation means for varying a relative position between the electron irradiation means and the original disk 21 in the horizontal direction and an original disk rotation control means for controlling the number of rotations of the original disk 21 based on the relative position in the case of irradiating the original disk 21 with the electron beam 19 by the electron irradiation means.

Description

200535992 (1) IX. Description of the invention [Technical field to which the invention belongs] The present invention relates to a method for preparing a master film for an information recording medium, etc. In detail, it relates to an electron beam irradiation method that improves the accuracy of a recording position. §3 The method of making master films for recording media. [Prior art] In recent years, with the increase in the amount of data to be recorded, it becomes necessary to increase the recording capacity and recording density of the required information recording medium, and further increase the access speed of the recorded information. Therefore, the pit size or groove width of the substrate of the optical disc is gradually reduced year by year, and the track pitch is also narrowed. Generally, fine structures such as depressions or recessed tracks that are previously formed on the optical disc substrate are made by a lithography method using laser light. Therefore, the minimum size of a depression or recess that can be formed is related to the wavelength of the laser light emitted by the light source and the number of openings (NA) of the condenser lens. Because the lens NA of the exposure device is 0. 9 is close to the limit, so the previous master exposure device using laser light uses the shorter wavelength of laser light to cope with the trend of miniaturization. Specifically, for DVD, for example, a 気 laser having a wavelength of 351 nm is used; and for BluRay Disc, for example, a second high-frequency wave using an excitation beam of argon laser is used, with a wavelength of 2 5 Laser light of 7 nm or 2 4 4 nm. In the same manner as the optical disc, the lithography method is used to form a fine-structure semiconductor manufacturing process. For example, shorter wavelength laser light such as argon fluoride excimer laser light having a wavelength of 19 nm is used. However, in this pulsed laser light source, the intensity of each pulsed light is inconsistent, for example, the averageness of the pit size will be impaired. -5- 200535992 (2) Therefore, for the surface exposure method used in non-semiconductor processes, the direct drawing method The optical disc manufacturing process is not applicable. For this reason, it has not been found that the far-ultraviolet laser, which is the second highest modulation wave using the lasing beam of argon laser, can continuously excite with a shorter wavelength and create a more subtle depression or recessed laser light source. Therefore, the manufacturing of discs with a higher recording density is based on the high possibility of using an electron beam drawing device, and it is continuously being developed. However, in order to make a spiral recording track φ for a mother disc on an optical disc, it is roughly classified into keeping the light amount and linear velocity of the exposure beam constant, and continuously changing the number of rotations of the mother disc and the moving speed of the slider according to the radial position. CL V (Constant Linear Velocity) method; and CAV (Constant Angular Velocity) method that keeps the number of rotations of the mother film and the moving speed of the slider constant and continuously changes the light amount of the exposure beam according to the radial position 2 Species. In general, dedicated live media or recordable media that value recording capacity only uses the CLV method, while computer-use media that values access speed is created using the CAV method. For example, it can be regarded as a φ-optical disk, and the localization of the address at the correct specific location can shorten the access time. That is, in order to record correctly at a specific position on the disc, it must be a CA that is easy to perform drive control and rotation control in the radial direction. V way. In addition, in recent years, the purpose of dramatically improving the recording density is to propose a complex recording method that only adjusts the recording position of a small number of bits, or a two-dimensional recording that forms a mark with a plurality of bit rows; for optical disc masters It is necessary to improve the accuracy of the recording position. On the other hand, the electron beam used in the electron beam drawing device does not exist.-200535992 (3) The acoustic beam (A 0) element of the master exposure device using the previous laser light can be arbitrarily controlled. The device controls the amount of electron beam exposure by adjusting the number of electrons (current 値) passing through the opening. However, for example, when the number of rotations of the fixed mother sheet is within a range of 20 mm to 60 mm in the radius of the mother sheet and a spiral recording track is formed, the current 値 must be changed by about 3 times at the innermost and outermost periphery. In addition, it is difficult to control the scattering of electron beams from behind the substrate, or the amount of charge up of the substrate (Charge up), which has problems such as changing the axis of the electron beam if the current 値 emitted by the electron gun is changed. ; It is not easy to change the number of rotations of the fixed master with the CAV irradiation method of the current 配合 in accordance with the radial position, and there are also considerable obstacles to the manufacture of stable master discs. Fig. 10 is a diagram illustrating the relationship between the radial position and the number of rotations of the master disc for optical discs with respect to the CLV method. The horizontal axis of Fig. 10 is the radial position of the master disc for optical discs, and the vertical axis is the number of rotations. Curve A represents the derivation of the ideal rotation number for the C LV method as the target of the optical disc master; its φ represents the larger radius position (outer periphery), and the rotation number is smaller. As shown in Figure 10, in the CLV method, carefully observe that the number of rotations of the master disc for the optical disc is kept constant, and it is changed stepwise at a very short time interval (the interval C for the number of rotation updates) (error B) Rotate the digital ground for digital control. On the other hand, it does not change the number of rotations of the mother piece in accordance with the inertial force of the rotation. Generally, the rotation of the mother piece is in the form of curve A and the step-like instructions output by digital control are repeated in small amounts. , To proceed. The interval C for the rotation number update is limited by the communication speed or response speed with the control device and the bit resolution of the rotation number of the control device. -7- 200535992 (4). Therefore, if the number of bits indicating the number of rotations is insufficient, and there is no degree of error accumulated to detect the difference from curve A; or the operation of the control device is restricted by communication with other output circuits; or If the update of the rotation number is delayed due to communication failure of the input and output of information, etc., a huge rotation control error (error D) will occur. In addition, the CLV drive has different numbers of rotations on the inner and outer perimeters. Therefore, the inner frequency side with a larger number of rotations has a looser frequency update φ interval, which determines the rotation speed, than the outer perimeter. Therefore, in the inner periphery, it is easier to cause a positional deviation between a specific recording position and a position where the electron beam is actually irradiated. On the other hand, if the speed at the inner periphery is reduced, the irradiation time of the entire disc will be significantly prolonged, so it is not suitable for localized disc manufacturing. In addition, prolonging the irradiation time will greatly affect the output variation of the electron beam, so there is a considerable obstacle to high-density optical disc masters that are stably manufactured when the master film is made, and the amount of pre-recorded information has increased dramatically. On the other hand, when analog control is performed with an open loop, the reference clock indicating the rotation speed φ degree can be compared with the output of the rotary encoder of the slice rotation speed to prepare a specific lamp waveform, so it is difficult to produce such a waveform. Problem; however, it is necessary to set the gain change in detail in accordance with the amount of change in the rotation speed. This kind of management is usually not easy. Therefore, in the example of a single-direction drive such as the control of the rotating shaft and the slider, the closed loop is used for digital control. This is the current mainstream. Therefore, the CLV method does not necessarily perform ideal rotation control. Therefore, in order to realize the exposure position with extremely high accuracy, it is conceivable that the CAV method that keeps the number of rotations of the mother film and the moving speed of the slider is constant; for example, it is reported that for the CAV method, each Unit surface 200535992 (5) Product exposure as a certain exposure method (refer to patent documents; 1) β [Patent Document 1] Japanese Patent Laid-Open No. 2 0 0 0-〇 1 1 4 64 [Inventive Content] Problem to be solved However, as described in Patent Document 1, for the CAV method, the irradiation amount per unit area of the electron beam is regarded as a constant method. The inner and outer peripheries having different rotation speeds φ are radiated by the electron gun. The current 値 must be changed drastically, and there is a problem that the axis of the electron beam cannot be avoided. In addition, as described in Patent Document 1, the method of pulse-modulating the electron beam and controlling the irradiation amount of the electron beam according to the working ratio of the pulse is generally used to blank the electron beam in order to ensure the bias vector. It is not the electrostatic deflection that responds fast, but the electromagnetic deflection. Therefore, the number of electrons passing through the opening part will change, so the formed concave track will have a problem of insufficient width uniformity. That is, in order to solve this problem, it is necessary to suppress the rotation number φ to be low, and the irradiation time of the entire disc is prolonged, so it is not suitable for the manufacture of high-density discs. Even if electrostatic biased disconnection is used, in order to perform the modulation, the bias vector of the electron beam must be increased; that is, the capacitance of the biased electrode for disconnection will increase, resulting in a limitation of the modulation speed. The present invention is to solve the technical problem that such an electron beam drawing device will become a relief when the master for information recording media is exposed. That is, it is an object of the present invention to provide a method for forming a master film of an information recording medium under the irradiation of an electron beam having an improved recording position accuracy. Still another object of the present invention is to provide a mother sheet irradiation device for information recording media capable of performing electron beam irradiation for improving recording position accuracy. Furthermore, another object of the present invention is to provide a method for manufacturing an information recording medium with improved recording position accuracy. Furthermore, another object of the present invention is to provide an information recording medium with improved recording position accuracy.手段 Means to solve the problem% The above-mentioned problem should be solved, but the present invention proposes a method for creating a master film for an information recording medium, which aims at using an electron beam sensing device that has a change in polarity due to electron beam irradiation. Resistor film mother sheet, electron beam irradiation means for irradiating electron beams, driving means for holding and rotating the mother sheet, and means for changing the relative position of the electron beam irradiation means and the mother sheet in a horizontal direction, the mother sheet is irradiated The device is used to irradiate the electron beam, and the information recording medium forming a spiral or concentric circular track is made of a master-square method; the characteristic is that the range of the irradiated electron beam is divided into concentric circles divided in the radial direction. The multiple recording ranges of the state; the amount of electron beam irradiation per unit time in the range of the irradiated electron beams of the mother sheet is kept constant, and the number of rotations of the mother sheet is controlled to be constant for each of the distinguished recording ranges. By adopting such a structure, the current radiated by the electron gun becomes constant, so the axis variation of the electron beam can be suppressed; and the rotation control with a small rotation error due to a fixed rotation speed can be maintained, so the information of the irradiated electron beam can be maintained Height position accuracy. In the present invention, the range of the irradiated electron beam is divided into -10- 200535992 in the radial direction. (7) The concentric circle-shaped plural recording range 'refers to a range in which information can be recorded or reproduced in a specific device; usually' and settings As indicated by the barcode on the inner periphery of the master film, the scope of recording master film management information, etc. is not the same. In addition, in order to form a depression in which specific information is recorded in advance on the mother film, a method of interrupting the electron beam by disconnection is generally adopted; however, with such a control, the amount of electron beam irradiation per unit time is irradiated on the mother film. When changing, it is also within the scope of the present invention to use a method of making the mother film for a certain information recording medium for the timing when the electron beam is not cut off. In addition, in the present invention, if the boundary portion of the discriminated recording range is controlled from the discriminated recording range on the outer periphery to the discriminated recording range on the inner periphery in a stepwise manner, the number of rotations is controlled. The inner and outer peripheral difference of the amount of electron beam irradiation per unit area is reduced, and the electron beam irradiation area of the mother substrate can be made larger. In addition, for the boundary portion of the discriminated recording range, the recording range divided by φ from the inner periphery to the discriminated recording range from the outer periphery is controlled to increase the number of rotations in stages, and the same result can be obtained. Effect, and such an information recording medium using the method of making a master film is also within the scope of the present invention. Furthermore, it adopts a structure in which the number of rotations on the outer recording side is higher, and the electron beam is reduced compared with the previous CAV method. The irradiation time can be stably performed to manufacture the information recording medium. Moreover, in the present invention, the ratio of the maximum linear velocity and the minimum linear velocity is controlled to -11-200535992 (8) 1 for the differentiated recording range of the rotating mother film.  It is better to be less than 3; moreover, the ratio between the maximum 値 of the average linear velocity and the minimum 値 of the average linear velocity between the recorded ranges of the rotating mother film is preferably controlled to be less than 1.1. If the linear velocity in the recording range of the rotating master film, the average linear velocity between the recording ranges, and the width of the recording range are placed within the above-mentioned ranges, then for each recording range, the The variation of the width of the recessed track of the recessed track formed by the Φ of the mother sheet of the electron beam sensing resist film having a polarity change is adjusted within an acceptable range. In addition, for all areas where the electron beam is irradiated with a small area of the electron beam, the number of rotations of the rotating mother wafer is set to be a constant 'to control the ratio of the maximum linear velocity to the minimum linear velocity' to 1 · When 3 or less, the number of recording ranges that are divided into concentric circles in the radial direction can be set as 10, and the width of the divided recording range that is set on the inner peripheral side of the master film is set relatively. The narrower φ width of the recording range that is distinguished on the outer peripheral side of the mother film is better; for the recording range on the inner peripheral side of the mother film that is set to have a large change in the rotational linear velocity, the per-unit area can be further reduced. The difference between the inner and outer circumferences of the irradiation amount of the electron beam. In other words, even if the recording range is set on the inner peripheral side of the mother film having a large change in the rotational linear velocity, the inner and outer peripheral differences in the width of the recessed track of the recessed track formed by the specific development process can be further reduced. Furthermore, according to the present invention, it is proposed to use a mother wafer irradiation device further equipped with an electron beam and a flattening means for vibrating an electron beam to a rail in a nearly vertical direction to irradiate the electron beams to form a spiral or concentric shape. The information recording medium of the circular track is made of a master film; in which, for the range of each recorded record-12-200535992 (9), the bias vector of the electron beam is controlled to increase from the inner periphery to the outer periphery. By adopting such a structure, the local position accuracy of the information irradiated by the electron beam can be maintained; furthermore, it is possible to reduce the inner and outer peripheral differences of the width of the concave track within the range of the irradiated electron beam 'concave tracks formed by specific development processing' . Furthermore, let the linear velocity of each radial position r be V (r), and the electron beam deflection of the linear velocity V (r) is not performed, but the recessed track width of the recessed track formed by the specific development process is defined as W (r) ), And when the width of the recessed orbit formed by the deflection of the electric φ sub-beam while rotating is taken as Wmax, the bias vector of the electron beam for each radial position is Wmax-W (r) ground, It is better to control it; in this way, the width of the grooves in each of the divided recording ranges can be made even. Furthermore, it is better to make the deflection frequency of the electron beam above V (0 / W (r), and deflection the electron beam in a direction almost perpendicular to the orbital direction. This can suppress the formation by performing a specific development process. Second, the present invention grasps a φ-radiation device for a mother film used as an information recording medium, which is characterized by having a mother film having an electron beam sensing resist film having a polarity change due to electron beam irradiation. Electron beam irradiation means for irradiating the electron beam; and driving means for holding and rotating the mother sheet; and changing means for changing the relative position of the electron beam irradiation means and the mother sheet in the horizontal direction; and the range of the electron beam irradiation for the mother sheet, It is divided into a plurality of recording ranges that are divided into concentric circles in the radial direction, and the amount of electron beam exposure per unit time in each of the divided recording ranges is kept constant. The number of rotations is a control method for controlling the number of rotations. By adopting such a configuration, the current 値 emitted from the electron gun can be kept constant at -13- 200535992 (ίο), so it can be suppressed. The axis of the sub-beam fluctuates; and because the rotation speed is fixed, the rotation control with less rotation error is performed, so that the accuracy of the height recording position of the information irradiated by the electron beam can be maintained. Furthermore, if the present invention has a record for distinguishing The boundary part of the range is controlled from the outer recording range to the inner recording range, and the number of rotations is controlled step by step. The control means will reduce the electron beam irradiation per unit area. The difference between the internal and external perimeters can be increased by φ to increase the irradiation area of the electron beam of the mother film. ^ Furthermore, the mother film irradiation device for the information recording medium to which the present invention is applied is a boundary portion of the distinguished recording range. It is better to change the number of rotations of the mother film to 10 rotations or less; since the number of rotations that are not related to recording and reproduction is changed, the transition range of the transition range is reduced, so that the recording capacity can be prevented from decreasing. In the master film irradiating device used for the information recording medium to which the present invention is applied, the master film irradiating device is further equipped with a rotary control of the master film and simultaneously outputs. Φ The rotation angle information output means is preferred if the rotation angle information of the mother piece is output; in this way, resynchronization with the signal generation means recorded by the electron beam can be implemented, and the radial direction is divided into plural concentric circles. The recording range of the state is corrected by the rotation error caused by the change in the number of rotations in the radial direction. Furthermore, the accuracy of the recorded position of information can be improved for the plural recording ranges that are divided into concentric circles by plural numbers in the radial direction. In addition, in the mother film irradiation device for the information recording medium to which the present invention is applicable, it is better to have a bias control means for controlling the bias vector of the electron beam; for the recording range divided in the radial direction, from the inner periphery to the outer periphery In order to make -14-200535992 (11) the electron beam deviated in a direction perpendicular to the orbital direction, the deflection vector is controlled in an increased manner, and the difference between the inner and outer circumferences of the formed concave track width can be further reduced. Furthermore, the means for controlling the deflection of the electron beam is preferably a static deflector with a fast response speed. This is to suppress the meandering of the concave tracks formed by performing a specific development process. It is also preferable that the master film irradiation device for an information recording medium to which the present invention is applied is further provided with a modulation Φ control means capable of interrupting the electron beam by interrupting the electron beam. On the other hand, the present invention grasps a method for manufacturing an information recording medium, which is a method for manufacturing an information recording medium having a specific spiral or concentric circular track, and is directed to a method for forming an information recording medium including a specific concave track. A mother sheet forming process of the mother sheet and a metal mold forming the shape of a recessed track of the mother sheet for the information recording medium to be formed, the mold forming process; and the mother sheet process having an electron beam irradiation means, and A specific electron beam irradiating device for changing the relative position of the mother film in the horizontal direction and a driving method for rotating the mother film by Φ; its characteristic is the electron beam induction resistance of the surface of the mother film which is rotated by the driving method. Agent film, the electron beam is irradiated by the electron beam irradiation means, and then the horizontal position of the electron beam irradiation means and the mother sheet is changed by the changing means. When the electron beam is irradiated by the electron beam irradiation means, the mother sheet is irradiated The area of the electron beam is divided into a plurality of recording ranges that are divided into concentric circles in the radial direction, and the mother plate is irradiated with electrons. The amount of electron beam irradiation per unit time in the beam range is kept constant, and then the electron beam is irradiated with a constant number of rotations of the mother substrate. Furthermore, according to the present invention, an information recording medium is provided. The information recording medium is a -15-200535992 (12) information recording medium having a spiral or concentric circular recording track formed on a substrate; its characteristics are provided on the substrate A plurality of recording ranges that are divided into concentric circles with a specific width; and a migration range that is provided at a boundary portion of each of the separated recording ranges and has a width in the radial direction of the substrate of 10 tracks or less. The migration range in the information recording medium to which the present invention is applied is set to be less than 10 tracks, reducing the track of irrelevant recording and reproduction, and preventing the reduction of the recording capacity. It is better to have re-synchronous re-synchronous Φ step control marks near the migration range or migration range. When forming a recording range that is divided into multiple concentric circles in the radial direction, the boundary of the recording range The rotation error caused by the change in the number of rotations near the radial position is corrected. In the information recording medium to which the present invention is applied, each recording range that is divided into concentric circles with a specific width on the substrate, and the ratio between the radial position on the outer peripheral side and the radial position on the inner peripheral side is one of 1.3 or less. Better. Furthermore, in the information recording medium to which the present invention is applied, the 'width of the divided recording range provided on the inner peripheral side of the substrate' is larger than the width of the divided recording range provided on the outer peripheral side of the base Φ plate is Narrower is better. In the above, according to the present invention, a method for preparing a master for information recording media using an electron beam with improved recording position accuracy can be provided. [Embodiment] Hereinafter, the best method for implementing the present invention will be described with reference to the drawings. Best Mode (hereinafter referred to as the implementation mode). FIG. 1 is a -16-200535992 (13) diagram illustrating a mother film irradiation apparatus to which this embodiment is applied. The master wafer irradiating device 100 shown in Fig. 1 is composed of a mirror tower accommodating an electron optical system as an electron beam irradiation means], and a sample chamber 20 having a master wafer storage rotating means. The mirror tower 10 and the sample chamber 20 are maintained in a vacuum state by a suitable vacuum device (not shown). The electron optics system is installed inside the mirror tower 10 and includes a thermionic electron gun 1 1 that emits an electron beam 19 at a specific applied voltage (for example, 5 OkV); and an electron beam to be emitted 19 , The condenser lens 12 to which the light is focused; and the modulation of the electron beam 19 to the condenser lens 12 by the signal of the φ modulated signal source 17 by the beam modulator 18 Open electrode 1 3; and aperture 14 which will block the electron beam 19 biased by disconnect electrode 13; and a bias electrode which biases the amplitude of the electron beam 19 according to the signal from the controller 26 15; and the electron beam 19 is condensed to a fine beam diameter, and is irradiated onto the objective lens 16 on the mother substrate 21. The sample chamber 20 includes a rotary table 22, which is a driving means for holding and rotating the mother substrate 21, and moves the mother substrate 21 in a horizontal direction so that the electron beam 19 and the mother substrate 21 are horizontally opposed to each other. The means for changing the position, that is, moving the moving table 23; the rotating table 22 and the moving table 23 are transmitted with the power of the AC servo motor 25 through the guide screw 24. As shown in Fig. 1, the electron beam 19 emitted by the electron gun 11 is focused by a capacitive lens 1 12. Disconnecting the electrode 1 3 is to deflect the traveling direction of the electron beam 19 by the electric field modulated by the beam modulator 18 by the signal from the signal source 17 and modulate the electron beam 19's aperture 1 4 Whose throughput. The electron beam 19 passing through the aperture 14 is controlled by the deflection electrode 15 and is condensed again by the objective lens 16 to be irradiated onto the surface of the mother substrate 21. The deflection electrode 15 controls the amplitude of the high-frequency vibration caused by the amplitude control signal of the controller 26, and controls the deflection amount of the electron beam 19 accordingly. The controller 2 6 controls the electron beam 1 based on the position of the electron beam 1 9 on the mother film 21 and its position on the mother film 21 and the rotation number information of the mother film 2 at that position. Partial vector of 9. Also, the controller 26 controls the AC servo motor 25 by controlling the number of rotations of the relative position of the electron beam 19 irradiated on the mother film 21 and the mother film 21 in the horizontal direction, and controls the AC servo motor 25. The rotation number of the master rotation control means and generates a function. Next, the mother sheet 21 will be described. Fig. 2 is a diagram illustrating a recording range of a mother film. Figure 2 (a) shows the plural record ranges equally divided in the radial direction; Figure 2 (b) shows the plural record ranges with different widths. As shown in Figure 2 (a), the master piece 21a , Has a plurality of recording ranges (recording range 1 a to recording range 3 a) which are equally divided in the radial direction. Although the width of each of the divided recording ranges is not particularly limited, it is usually 0 · 2 ~ 0 · 5 m m, and is preferably 0.  5 ~ 5. 0 m m range. The plural recording ranges (recording range 1 a to recording range 3 a) which are equally divided in the radial direction are generally determined in the following manner in the radial direction width. That is, the ratio of the linear velocity on the innermost peripheral side to the linear velocity on the outermost peripheral side in the plural recording ranges that are equally divided in the radial direction when the mother film is rotated by a certain number of rotations in each recording range. Outer peripheral linear velocity / inner peripheral linear velocity of each recording range), usually 1. 3 or less; ideally 1. For the range below 2, it is better to set the width of each recording range in advance. By setting the width of each recording range in this way, it is possible to divide evenly the plural recording ranges of -18-200535992 (15) in the radial direction, and the peripheral difference between the irradiation amount of the electron beam per unit area is further reduced. That is, it is possible to reduce the difference between the inner and outer peripheries of the width of the concave tracks in each recording range formed by performing a specific development process. As shown in Fig. 2 (b), the mother film 21b has a plurality of recording ranges (recording range lb to recording range 3b) divided by a specific width in the radial direction. The width of the plural recording range (recording range lb to recording range 3b) is set to be larger in the radial direction of the mother film 2 1 b from the inner peripheral side to the outer peripheral side. In this way, the mother film 2 1 b is divided into a plurality of concentric circles with a plurality of concentric circles in the width of the recording range (recording range lb to recording range 3b), so that the width of the recording range provided on the inner peripheral side is narrower than the outer peripheral side. The ratio of the linear velocity at the innermost peripheral side to the linear velocity at the outermost peripheral side within the recording range of the inner peripheral side where the linear velocity changes greatly (the outermost peripheral linear velocity of each recording range / the innermost of each recording range) (Peripheral linear velocity) is further reduced; as a result, for the recording range on the inner peripheral side where the linear velocity changes greatly, the inner and outer peripheral differences of the amount of irradiation of the electron beam per unit area by φ can be further reduced. That is, it is possible to reduce the difference between the inner and outer peripheries of the concave track width within the recording range of the inner peripheral side formed by performing a specific development process. In addition, the number of rotations of each recording range divided into concentric circles in the radial direction is the ratio of the maximum 値 and the minimum 平均 of the average linear velocity between the recording ranges (the maximum average linear velocity of the entire recording range 値 / the entire recording range) The average linear velocity is the smallest 値), usually 1. 1 or less; ideally 1. For ranges below 05, it is better to set the width of each recording range in advance. By setting the number of rotations of each recording range in this way, the difference in the amount of electron beam exposure per unit area of -19- 200535992 (16) in each entire recording range can be further reduced. That is, it is also possible to reduce variations in the width of the groove tracks in each of the entire recording ranges formed by the specific development process. In addition, the number of rotations, which are divided into concentric recording ranges in the radial direction, is kept constant, and the rotation error can be reduced, and the height position of the information irradiated by the electron beam can be kept more accurate. The number of rotations of the mother film 21a and the mother film 12b , Is at the boundary of each recording range (recording range 1 a to recording range 3 a, recording range φ range 3 b), corresponding to the synchronous migration range (not shown) of the reintegration signal corresponding to the rotation number of each recording range, Usually around the rails. The change in the number of rotations between recording ranges is usually within a short interval of 10 msec or better. The number of rotations of the mother substrate 21, which is the same as that of the mother substrate irradiating device 100 applicable to this embodiment, is constant, while the electron beam 19 is irradiated on the electron beam sensing resist film when the electron beam 19 is irradiated. The φ shot is not constant. Therefore, the recording track formed in each recording range is changed on the innermost peripheral side and the outermost peripheral side of each recording range. However, even if the recessed track width of such a recording track is changed, the signal strength can be corrected by normalizing by adding these signals. Therefore, the plurality of recording ranges of the master 21 are divided in a radial direction, and the width and the number of rotations of the master 21 are set in advance, and the concave movement of the concave tracks in each recording range can be adjusted to Within acceptable range. Based on this, the mother's C / N ratio (carrier level / noise level) can be made tolerant 値 low rotation control of each concave shape of the circular track. The divided H lb ~ records the change; therefore, it is set to perform a rotation of 1010, while keeping the width of the area, usually in accordance with the width of the area. In this case, the degree is concentric circles. Within -20-200535992 (17) Masterpiece for information recording media. Fig. 3 is a diagram illustrating a state in which the electron beam is deflected to a position almost perpendicular to the orbit. FIG. 3 shows a range 1 of a plurality of recording ranges of a concentric circle in the radial direction for the mother film 21, and the track a (track a, track a + 1, track a + 2) on the inner peripheral side of the table. ··), installed on the rail b (rail b, rail b + 1, rail b + 2, etc.), installed on the outer peripheral side c, rail c + 1, rail c + 2 ...), which are irradiated to each Electric frequency vibration of the rail. • In Figure 3, the horizontal axis indicates the orbital direction of the mother film 21 and the radial direction of the vertical film 21. As shown in FIG. 3, using the function of making the electron beam vibrate in a direction almost vertical, the irradiation area of the electron beam 19 of the photo 2 1 is actually enlarged, and it can be formed in each recording range by specifying it. The concave track, the width of the concave track is increased, and the electron beam 19 is irradiated on the mother film 21 with a specific wide and complex recording range in the radial direction, and its bias vector is recorded for each. It is preferable that φ increases from the inner peripheral side toward the outer peripheral side of the mother sheet 21. Also shown, the orbit a on the inner peripheral side (orbit a, orbit a + 1, orbit a + 2) is slower than the peripheral side, and the electron beam per unit area is larger, so the electron beam is 1 9 The partial vector control is preferably the smaller; the other is the rail c on the outer side (rail c, rail c + 1, rail c + 2. ·. ), Because it is faster, the amount of electron beam irradiation per unit area is small, so it is better to control the bias vector to a large one. That is, in this embodiment, if the orbit of the electron beam 19 mother film 21 is almost perpendicular, it is usually divided into the orbit c (or the The high axis indicates the development of the mother 19 and the orbital shooting on the mother film. The divided recording range is as shown in Figure 3 ... ), And the external exposure is on the one hand, and its linear velocity sub-beam I 9 is biased toward the continuous linear velocity of the parent film 21 at -21-200535992 (18). The electron beam per unit area is irradiated. The internal and external perimeter difference of the width of the inner concave track of each recording range caused by this amount. This kind of problem can maintain a certain number of rotations for each recording range by controlling the bias vector of the electron beam 19, and can be limited to the mother time. The width of the recessed rails forming the average rail on the sheet. In this way, according to the position information of the radial direction of the mother film 21 and the rotation speed information of each recording range, warping can be given to 'expanding the irradiation area of the electron beam 19 of each 9 φ recording range', so that it can be reduced. The formation of the recessed rails-the width of the recessed rails is different inside and outside. Here, for the bias vector of the electron beam 19 at each radial position r of the mother substrate 21, the linear velocity of each radial position r is taken as V (r), and the bias of the electron beam 19 at the linear velocity V (0) is not performed. , But the width of the recessed track W (r) of the recessed track formed by the specific development process, and the width of the recessed track of the recessed track formed by the deflection of the electron beam while rotating is Wmax, control to \ Vmax-W (0 is better. Also, the deflection frequency of the electron beam 19 is at. Above φ V (r) / W (r), it is preferable to deflect the electron beam 19 almost perpendicular to the orbital direction. In this way, by combining the control of the amount of flutter under the high frequency flutter caused by the bias beam and the electron beam caused by the electron beam, the electrons per unit area with the continuous change of the linear velocity within the specific recording range of the mother film 21 are combined. The variation of the beam irradiation amount will offset the variation of the recessed track width of the recording track, and can keep the number of rotations of each recording range of the mother film 21 constant, and keep the recessed track width of the recording track average. That is, based on the positional information of the mother wafer 2 1 irradiated with the electron beam 19 and -22- 200535992 (19) rotation number information for the position on the mother wafer 2 1 irradiated with the electron beam 19 For calculation, the bias vector of the electron beam 19 can be set, which can further reduce the variation of the recessed track width of the recording track within each recording range, and can produce the overall C / N ratio (carrier level / noise level) of the mother film 21 (Standard) Masterpiece for reduced information recording media. Next, the structure of the mother substrate 21 will be described. The mother sheet 21 is formed on the appropriate substrate by spin-coating an electron beam sensing resist with a heat treatment to remove excess solvent to form an electron beam sensing resist film. Examples of the substrate of the mother substrate 21 include silicon wafers, quartz glass, soda glass, quartz glass with a conductive layer formed on the surface, and soda glass with a conductive layer formed on the surface. Among them, those who charge silicon wafers (Charge up) also apply to some extent. Electron beam sensing resists are usually diluted by using an acid generator and an adhesive resin to dissolve a salt-based compound into a salt-based solvent. As an acid generator, as long as the chemical structure is changed by irradiation with an electron beam, those that generate acidic substances are not particularly limited, such as trichlorosulfonic acid, triphenylsulfonic acid, and triphenylsulfonic acid nonafluorobutylsulfonic acid. , Trichlorosulfonic acid diphenyliodine, nonafluorobutylsulfonic acid diphenyliodine, nonafluorobutylsulfonic acid diphenyl p-methoxybenzene, nonafluorobutylsulfonic acid diphenyl P-ethylbenzene, etc. Salts; 1,8-naphthalenedimethylaminosulfonic acid ester, 1,8-naphthalenediamineaminotrichlorosulfonic acid ester, 1,8-naphthalenedimethylaminosulfonic acid tosylate, benzoin Tosylate such as tosylate; bis (benzenesulfonyl) diazomethane, bis (p-chlorobenzenesulfonyl) diazomethane, bis (cyclohexylsulfonyl) diazomethane, etc. Azomethanes. Among these, key salts such as trichlorosulfonic acid triphenylsulfonate are desirable because they can achieve high sensitivity. Acid-23- 200535992 (20) Specific examples of the generator are shown below

CFgSOg

N-0 * ~ S-CH3 TPS-105 Trichlorosulfonyl triphenylsulfonium

0 NAI-105 1,8-Cyme dimethylamino chlorotrisulfonate ΝΑΙ-100 !, 8-Cyme dimethylamino sulfamate

N—O—S—CF3 Q_, ^ Q 〇Fas〇, DPM05 Triazine acid diphenyl iodide DPI-109 nonafluorobutyl sulfonic acid diphenyl iodine 0h3c ~ h〇- nonafluorobutyl sulfonic acid triphenyl pistol

〇4FgS〇3

NAI-101 1,8-naphthalene dimethylamine tosylate MDS-105 Nonafluorobutylsulfonic acid diphenyl p-methoxybenzene

MDS-205 Nonafluorobutylsulfonic acid diphenyl P-ethylbenzene

DAM-102 Di (cyclohexylsulfonyl) diazomethane as an adhesive resin, as long as it is a chemical substance produced by chemical change of an acid generator by irradiating an electron beam, it will become polar at room temperature or under heating The change is not particularly limited, but examples include (meth) polyethylene such as polymethyl methacrylate (PMMA), polyethyl methacrylate, polybutyl methacrylate, polyisobutyl methacrylate, 'polyvinyl methyl ester, and the like. Acid esters; polyhydroxyphenylethyl-24-200535992 (21) ene derivatives. Among these, polymethyl methacrylate (PMMA) is also preferred, and the development speed caused by the change in polarity is large. In addition, narrowing the molecular weight distribution of polyisobutyric acid methyl (PMMA) is preferable because it can reduce the development residual aberration in the electron beam irradiation range. The solvent is not particularly limited as long as it dissolves the acid generator and the adhesive resin; however, propylene glycol-2-monomethyl ether acetate (PGEMA), propylene glycol monomethyl ether ( PE) and other cellophanes; 2- ^ φ heptone, methyl ethyl ketone (MEK) and other ketones; ethyl lactate (EL), butyl acetate (BA) and other esters; moreover, this Equal mixing of solvents and the like is preferable because it can improve the film thickness averageness of the electron beam sensing film after spin coating. Among them, a mixed solvent of propylene glycol-2-monomethyl ether acetate (PGEMA) and ethyl lactate (EL) is particularly preferable. Furthermore, by dissolving the salt-based compound to adjust the salt-based property, the average of the width of the recessed track after development can be improved. The base compound is not particularly limited as long as it is a chemical substance that can be produced by chemically changing an acid generator by irradiating an electron beam. .Φ is not particularly limited; however, for example, bis (2-hydroxy Ethyl) imine tris (hydroxymethyl) methane (Bis-Tfis), triisopropanolamine (TIPA), etc., after rotating the cloth, non-volatile base compounds that do not evaporate due to heat treatment are preferred . Among them, the electron beam sensing resist of bis (2-hydroxyethyl) imine tris (hydroxymethyl) methane (Bis-Tris) after development has a steep sidewall angle, which is ideal. Specific examples of the basic compound are shown below. -25- 200535992 (22)

H2 H〇 \

h2

HOH〆 I, CH2〇H ch2oh

Bis-Tris bis (2-ethylethyl) iminotri (methane) methane

H3c. / OH CH〆 H2 I HO. / C, / CH2

CH〆, 〆 I I

CH3 H2C. / CH3 CH

OH

TIPA Triisopropanolamine In order to improve the film thickness uniformity of the electron beam sensing film after spin coating, it is better to add a small amount of a surfactant to the solvent. The surface active agent is preferably one containing fluorine to suppress the occurrence of streaks during spin coating. Next, a method of manufacturing a mother substrate 21 for an information recording medium by irradiating the mother substrate 21 with an electron beam by the mother substrate irradiation apparatus 100 will be described. The mother substrate 21 having a specific latent image formed on the electron beam sensing resist film by electron beam irradiation is heated from below by a hot plate, and the electron beam sensing resist film is irradiated with the electron beam 19 The polarity of the range. Next, the electron beam irradiation range after the polarity change is dissolved in an alkaline developing solution to obtain a resist pattern. The developing solution is not particularly limited as long as it can dissolve the electron-beam sensing film that has undergone a change in polarity; however, a tetradecyl ammonium hydroxyoxide (TMAH) aqueous solution, a sodium hydroxide (NaOH) aqueous solution, and hydroxide Potassium (KOH) -26-200535992 (23) Aqueous solution, phosphate buffer, and mixtures thereof are preferred; among them, tetradecyl ammonium oxyhydroxide (TMAH) aqueous solution is used as an electron beam sensing resist after development Its side wall angles are steep and ideal. After the conductive film is formed on the surface of the thus-formed electron beam resist pattern, nickel plating is performed; the nickel plating layer is peeled off from the mother sheet with the electron beam resist pattern information recording medium transferred, and information can be obtained. Stamper for recording media. g In this embodiment, in order to obtain the target beam diameter, it is necessary to increase the acceleration voltage of the electron beam 19, but generally, if the acceleration voltage is increased, the sensitivity of the electron beam sensing resistor is reduced. The sensitivity of the electron beam sensing resist is reduced in this way. Although the thickness of the electron beam sensing resist film formed on the mother substrate 21 can be increased, the thickness of the recessed rail formed on the mother substrate 21 is increased. It is difficult to make the depth and the film thickness of the electron beam sensing resist film having sufficient sensitivity the same. Therefore, a resist pattern formed by the electron beam sensing resist film is used as an etching mask on the mother substrate 21 to perform an etching method such as reverse φ ion etching. The shape of the concave track formed by the electron beam sensing resist film is preferably transferred to the mother substrate 21. The gas used for reactive ion etching is not particularly limited as long as the etching speed of the mother substrate 21 corresponding to the etching speed of the electron beam sensing resist, that is, the etching selection ratio is 1.0 or more; however, for example, CHF3, C2F6 Isofluoride gas is preferably selected with a larger ratio; among them, the in-plane averageness at the etching rate of C2F6 is good, which is particularly desirable. Next, the electron beam sensing resist remaining on the surface of the mother substrate 21 is removed to complete a mother substrate for an optical information recording medium. Removal method of electron beam sensing resist > 27-200535992 (24) is not particularly limited as long as it does not deteriorate the shape transferred to the mother substrate 21. Specifically, the periplasmic plasma can be ashed, dissolved in an organic solvent, and dissolved in an alkaline aqueous solution. Among them, when a silicon wafer is used as the mother wafer, it is better to use an oxygen plasma ashing that does not cause chemical reactions on the silicon wafer. The mother sheet for the information recording medium with the electron beam sensing resist pattern transferred as described above is formed with a conductive film on the surface, and then nickel plating is performed; the nickel plating layer is transferred from the information recording medium transferring the electron beam sensing resist pattern. By using a mother film 母, a stamper for an information recording medium can be obtained. The information recording medium is usually a stamper for an optical information recording medium made in this way. For example, injection molding of polycarbonate resin is performed to obtain a substrate on which a recording track transferred by an electron beam sensing resist is formed on the surface. A specific layer such as a recording layer is laminated on this substrate and manufactured. A mother film for an information recording medium is manufactured by using the mother film irradiation device 100 to which this embodiment is applied. The information recording medium made with this mother film is spiral or concentric transferred by an electron beam sensing resist as described above. Circular recording Φ track. The substrate formed on the surface has a plurality of recording ranges divided into concentric circles with a specific width. The boundary portion of each of these recorded ranges is provided with the radius direction of the substrate. The width of the migration range is below 〖0. The migration range or the vicinity of the migration range is preferably the one with more synchronizable resynchronization control marks; this is the irradiation range of the mother film 21 with the electron beam 19, which is formed in the radial direction and is divided into multiple concentric circles. At that time, the rotation error caused by the change in the number of rotations near the radius position of the border of the recording range is corrected. -28- 200535992 (25) The width of the discriminated recording range set on the inner peripheral side of the substrate with the information recording medium will be smaller than the width of the discriminated recording range set on the outer peripheral side of the substrate. good. For the width of each recording range, the width of the divided recording range provided on the inner peripheral side of the substrate is preferably smaller than the width of the divided recording range provided on the outer peripheral side of the substrate. In addition, the ratio of the radial position on the outer peripheral side to the radial position on the inner peripheral side of each recording range divided into concentric circles with a specific width on the substrate is preferably g 1.3 or less. Thus, according to this embodiment, if the range of the electron beam 19 to be irradiated in the mother film 21 is maintained, the amount of electron beam irradiation per unit time can be kept constant, so the axis variation of the electron beam 19 can be suppressed; moreover, by The rotation If control with a small rotation error is performed by a fixed rotation speed, and the information of the irradiation electron beam 19 can be maintained at a high position accuracy. Furthermore, by increasing the accuracy of the recording position, it is possible to control the phase interference of the crosstalk or chattering between adjacent tracks to manufacture a high-density recording medium. In addition, φ can be concentrated on a specific angle of the disc to record control signals and address information, and a large-capacity information recording medium with faster access speed can be manufactured. In addition, the mother film 21 is divided into a plurality of recording ranges that are divided into concentric circles in the radial direction, and the more the recording range on the outer peripheral side is, the higher the number of rotations is. Compared with the previous CAV method, the number of electrons can be reduced. The irradiation time of the beam 19 makes a stable information recording medium. Examples Hereinafter, this embodiment will be described in more detail based on examples. The present embodiment is not limited to the examples. -29- 200535992 (26) (1) Manufacture of master sheet for information recording media (electron beam sensing resist film) 200 mg of trichlorosulfonyl triphenylsulfonate and the weight average molecular weight ratio of the number average molecular weight to 1.2 or less 10 g of polyisobutyric acid methyl ester with a small molecular weight dispersion, dissolved in 5 4 g of a mixed solvent of propylene glycol-2-monomethyl ether acetate and ethyl lactate, to prepare a solution of 5 of 1 · 40 g; and the amount of (2-hydroxyethyl) iminotris (hydroxymethyl) 0.79 g, 0.22 g of solution 2 dissolved in 100 g of ethyl lactate; and the amount of FC-43 0 manufactured by Sumitomo 3M Corporation There are 2g as a surface active agent, and 0.029g of solution 3 is diluted with 100g of propylene glycol-2-monomethyl ether acetate to be mixed with each other to adjust to an electron beam sensing resist. This electron beam sensing resist was spin-coated on a silicon wafer and heated on a hot plate at 1 1 (TC for 2 minutes) to obtain a mother wafer having a thickness of 8 Onm electron beam sensing resist film formed on the silicon wafer. The electron beam irradiation device, under the conditions of an acceleration voltage of 50 kV, a condensing half-angle of 9 mrad, and a beam current of 22 5 ιΑ, makes the amount of electron beam irradiation per unit time constant to the electron beam induction resist formed on the silicon wafer. The film forms a latent image in the following pattern. That is, as shown in Tables 1 to 4 described later, a plurality of recording ranges that are divided into concentric circles with a specific width in the radial direction are set in advance in the master film. Each recording range rotates the master by a specific number of rotations, so that each recording range has a certain amount of electron beam exposure, and the corresponding recording track has a specific recessed track width in the recording medium. The number of rotations, as shown in Tables 1 to 4, is changed stepwise for each of the recording ranges. Each recording range has a specific width in the radius direction of the master film, and is in the first range. Table and Table 4 It is 5mm, and in Tables 2 and 3, it increases toward the outer periphery of the mother film. For the exposure conditions shown in Tables 3 and 4, electron beam irradiation is performed with high frequency vibration, The width of the concave track of the track of the information recording medium is fixed. In addition, the boundary part of each recording ^ range is provided with a migration range (about 10 tracks in width), which is used to generate The signals that change with the change in the number of rotations are synchronized and integrated. Secondly, the silicon wafer on which the electron beam irradiation is completed is heated from below by a hot plate, so that the polarity of the range in which the electron beam is irradiated in the electron-sensitive resist film is This was changed with a developer (a diluted solution of NMD-3 manufactured by Tokyo Yingka Kogyo Co., Ltd.) to dissolve the polarized range to obtain a resist pattern formed on a silicon wafer. Next, the resist pattern was formed on a silicon wafer. The electron beam sensing resist pattern is used as φ as an etching mask, and C2F6 gas is used for reactive ion etching to transfer the electron beam sensing resist pattern to the mother substrate. Furthermore, the residual electrons are removed by ashing with an oxygen plasma. Beam sense (2) Manufacture of information recording medium (polycarbonate substrate) For the above-mentioned optical information recording medium master made of silicon wafer, sputtering is used. After the nickel conductive film is formed by electroplating, an nickel-31-200535992 (28) film with an average of 2 0 // // m is formed by electroplating. Then, the diced wafer and the nickel film are separated to obtain a stamper for an optical information recording medium. In addition, a polycarbonate substrate having an electron beam sensing resist pattern formed on the surface is obtained by injection molding of a polycarbonate resin. (Layer structure of an information recording medium) FIG. 4 illustrates the information used in the embodiment. The information recording medium 400 shown in FIG. 4 is a patterned structure of a large-area injection-type magnetic area expansion ^ φ large medium; it is sequentially layered on the transparent substrate 41 ^ The thermal layer 42, the recording layer 43, the normally magnetic layer 44, the trigger layer 45, and the reproduction layer 46 and the reinforcement layer 47 form a protective coating layer 48 as the outermost layer. The transparent substrate 41 is a polycarbonate substrate formed by an injection line method using a stamper made of the above-mentioned information recording medium master. The heat radiating layer 42 is a layer for adjusting the thermal sensitivity of the medium during recording and reproduction; it is manufactured to a thickness of 40 nm by a sputtering device using a target of an A1 alloy. The recording layer 43 is a layer in which information is recorded as magnetized information; it is composed of TbFeCo with perpendicular magnetization which has the advantage of a transition metal from room temperature to .φ Curie temperature. The recording layer 43 is formed by sputtering the monomer targets of T b, Fe, and C 0 at the same time, and has a film composition with a compensation temperature of about 25 t and a Curie temperature of 250 c. The film thickness is 60 nm. The normally magnetic layer 44 is composed of Gb, and is a layer for adjusting the example of the magnetostatic coupling between the recording layer 43 and the trigger. The trigger layer 45 is composed of T b F e with the advantage of transition metal. The trigger layer 45 is a sputtering target for a single target of τ b and Fe at the same time, and has a film structure with a compensation temperature below room temperature, and its film thickness is 10 nm. The reproduction layer 4 6 is a layer to be enlarged by adding the magnetic region transferred by the recording layer 4 3 to -32- 200535992 (29); it uses a vertical magnetization with the advantages of rare earth metals from room temperature to the Curie temperature. G d F e C 〇. The film formation of the regeneration layer 46 is performed by sputtering a single target of Gd, Fe, and Co at the same time, and the film composition is adjusted by controlling the power input to each target. The regeneration layer 4 6 is a vertical magnetized film with a Curie temperature of about 260 ° C. The film composition is adjusted so that the compensation temperature is above the Curie temperature, and the film thickness is 30 nm. The reinforcing layer 47 is a layer for effectively interfering with the regeneration beam in the layer to effectively increase the Kerr rotation angle. It is made of SiN. The enhancement layer 47 was formed by using Si as a target material, and the film was formed in an Ar and nitrogen environment with a film thickness of 35 nm. The protective coating layer 48 is a coating of an acrylic resin-based ultraviolet curable resin composition on the reinforcing layer 47, and then cured by irradiation with ultraviolet rays to form a film thickness of 1 5 // m 〇 (3) bit error rate measurement According to the information recording medium 4 0 0 manufactured by the above method, the width of the formed concave track is determined by the following procedures (bit error rate for all total bits) number). Fig. 5 is a diagram illustrating a device for measuring a bit error rate. Here, a magneto-optical disk drive using an objective lens with a wavelength of 4.05 nm and an aperture ratio of 0.85 is used. In addition, servo circuits, optical systems, and the like are omitted. The error rate measuring device 5 0, which is not shown in Fig. 5, is a driving optical head 5 1 which outputs a photomagnetic signal 5 7; and a lightning which synchronizes the pseudo-random pattern signal 5 3 and the pseudo-random pattern signal 5 3 The pulse signal 5 4 is a bit error analyzer 5 2 which is output respectively; and the pseudo-random pattern signal 5 3 is converted into a coil driver 5 5 of a modulation-33- 200535992 (30) variable magnetic field; and the laser pulse The signal 5 4 is a laser driver 5 6 which converts the laser pulses for fine adjustment and conversion; and the photomagnetic signal 5 7 output from the self-driving optical head 51 is processed by a band-pass filter 5 8 and an equalizer 5 9. Next, a recording operation of the bit error rate measuring device 500 will be described. First, the bit error analyzer 52 outputs a pseudo-random pattern signal 53 and a laser pulse signal 54 which is appropriately synchronized with the pseudo-random pattern signal 53. These signals are converted into a modulated magnetic field and a modulated laser pulse by the coil driver 55 and the laser driver 56 respectively; the magnetic field and the laser act on the information recording ^ media, and the bit error analysis The pseudo-random data output from the device 52 is recorded on the medium as a magnetic field. Here, a light pulse magnetic field modulation method with a magnetic field intensity of 3 000e and a laser power of 8 mW is used. Next, the reproduction operation of the bit error rate measuring device 500 will be described. First, the magnetic field expansion operation is appropriately performed, and a regeneration power of 1.5 mW to 2 mW is applied. The optical magnetic signal 5 7 output from the self-driving optical head 51 is controlled by the band-pass filter 58 and the equalizer 59 to minimize the errors of the recorded pseudo-random pattern signal .φ 53. The bit error analyzer 52 performs analog-to-digital conversion of the photomagnetic signal 57 and compares the reproduced signal after such analog-to-digital conversion with the pseudo-random pattern signal 5 3 used for recording. Based on this, the bit error rate of the pseudo-random pattern signal 53 used for recording is measured. (Example 1) As shown in Table 1, according to the electron beam irradiation method of the above-mentioned mother sheet, eight concentric circles with a width of 5 mm in the radial direction are set to a recording range of -34- 200535992 (31): For each recording range, the master is rotated by the number of rotations shown in Table 1, and the bit error rate of the information storage medium formed by irradiation with an electron beam is measured. Fig. 6 is a diagram for explaining an electron beam irradiation condition of a mother film in order to obtain an information recording medium according to the embodiment. The horizontal axis in FIG. 6 is the radius of the mother wafer on which the electron beam sensing resist film is formed on the sand wafer (the left side in the figure is the inner periphery); the vertical axis is divided into 5 mm widths for the radial direction. The recording range, its rotation number and linear speed. _ As shown in Table 1, the number of rotations is fixed for each system in each recording range, and is set to increase stepwise from the outer peripheral side to the inner peripheral side of the master. The average linear velocity of each recording range is 1.767 (recording range 4) to 1.814 (recording range 2), and the ratio of the maximum 値 to the minimum 平均 of the average linear velocity is 1.03, and is set to be almost constant. The ratio of the linear velocity at the innermost side to the linear velocity at the outermost side for each recording range that is evenly divided in the radial direction (linear velocity at the outermost periphery of each recording range / linear velocity at the innermost periphery of each recording range) ·· Departments range from 1.09 (recording range 8) to 1.25 (recording range 1). In addition, Table 1 shows the arithmetic mean of the bit error rate measured for each of the recording ranges, including the plural arbitrary orbits of the inner peripheral side rail and the outer peripheral side rail. In addition, the inner radius in the first table is the radius (unit: mm) of the innermost perimeter in each recording range; the outer radius is the radius (unit: ni m) of the outermost perimeter in each recording range; the number of rotations is each Differentiate the number of revolutions in a shaft (unit: rpm); the inner peripheral linear velocity is the innermost peripheral linear velocity of each recording range (unit: m / sec); the outer peripheral linear velocity is the outermost peripheral linear velocity of each recording range (Unit: m / sec); the average linear velocity refers to the radius of -35- 200535992 (32) The average linear velocity of the innermost linear velocity and the outermost linear velocity in each recording range that is evenly divided. (Unit: m / sec). The same applies to the following second to fourth tables. [Table 1]

Record the number of rotations of the inner circumference and the outer circumference. The average line position error range of the inner circumference and outer radius. Radius (rPm) Speed velocity Speed error rate (mm) (mm) (m / sec) (m / sec) (m / sec) xl Ο5 1 20 25 1.602 2.002 1.802 3.15 2 25 3 0 ^ _63j) 1.649 1.979 1.8 14 2.59 3 30 3 5 1.649 1.924 1.786 1.76 4 3 5 40 si5〇1.649 1.884 1.767 1 .76 5 40 45 __4〇5 1.696 1.908 1.802 1.59 6 45 50 ^ 3 ^ 60 1.696 1.884 1.790 1.40 7 50 55 1.727 1.900 1.814 1.52 8 55 60 3〇〇1.727 1.884 1.806 1.40 According to the results of Table 1, the linear velocity of each recording range is from the inner peripheral side. The outer peripheral side is slightly larger, and the bit error rate of the inner peripheral portion is 1¾ ′ closer than the outer peripheral portion. It is learned that all ranges of the information recording medium can be suppressed. (Example 2) As shown in Table 2, according to the electron beam irradiation method of the above-mentioned mother film, the ratio of the linear velocity of the innermost peripheral side to the linear velocity of the outermost peripheral side in each recording range is -36-200535992 (33) The ratio of the linear velocity at the outermost periphery of each recording range / the linear velocity at the innermost periphery of each recording range is reduced to a specific range, and 11 recording ranges are set. For each recording range, the number of rotations shown in Table 2 is used to Rotate, and measure the bit error rate of the information memory medium formed by irradiation with an electron beam. The width in the radial direction of each recording range is set to be narrower on the inner peripheral side than on the outer peripheral side. Fig. 7 is a diagram illustrating the electron beam irradiation conditions of the master in order to obtain the information recording medium of Example 2. The horizontal axis in FIG. 7 is the radius of the mother wafer on which the electron beam sensing resist film is formed on the silicon wafer (the left side is the inner periphery); the vertical axis is divided into specific widths for the radial direction. The recording range, its rotation number and linear speed. As shown in Table 2, the number of rotations is fixed for each system in each recording range, and is set to decrease from the inner peripheral side toward the outer peripheral side of the mother film. The average linear velocity of each recording range is 1 · 7 6 9 (recording range 9) to 1. 8 2 5 (recording range 1) φ. The ratio of the maximum 値 to the minimum 平均 of the average linear velocity is 1 · 0 3, and is The setting is almost always 値. The ratio of the linear velocity of the innermost peripheral side to the linear velocity of each outermost recording range divided equally in the radial direction (linear velocity of the outermost periphery of each recording range / linear velocity of the innermost periphery of each recording range) System 1.1 〇 (recording range 1) to 1 · 1 1 (recording range 6 etc.). Table 2 shows the measurement results of the bit error rate. -37- 200535992 (34) Γ_- Record the inner circumference and outer circumference rotation of the inner circumference and the outer circumference. Average line bit error range radius radius number speed velocity speed error rate (mm) (m rn) j (m / sec) (m / sec ) (m / sec) xlO5 1 20 22 1 '' 3〇1.738 1.825 1.62 2 22 24.J_ _75〇_ 1.727 J ^ 9〇〇_ 1.814 1.52 3 2 4 〇6 7 5 1.710 1.880 1.795 1.37 4 26.6 2 9 ^ 3 __ ^ — 1.713 1.800 1.41 5 29.3 3 2.j_ 1,702 1.787 1.3 1 6 32.2 1.719 1.805 1.44 7 35.4 1.723 1.899 1.811 1.5 1 8 39 4? 9 42 0 1.715 1.886 1.801 1.36 9 42.9 4 7 2 _371__ 1.684 1.853 1.769 1.34 10 47.2 5 ±, 9_ 1.705 1.875 1.790 1.37 11 5 1.9 S 7 3 1 5. 1.712 1.880 1.769 1.25 According to the result shown in Table 2 /, 'radial width of each division range' is set to the inner peripheral side rather than the outer peripheral side If the side is narrow and the width is increased in the radial direction, the recording range on the inner peripheral side with a large change in the number of rotations will have a lower bit error rate. As a result, it is known that for all ranges of the information recording medium, the bit The meta error rate is further reduced. (Example 3) As shown in Table 3, the ratio of the linear velocity on the innermost side to the linear velocity on the outermost side in each recording range was -38-200535992 (35) according to the electron beam irradiation method of the above-mentioned mother film ( The ratio of the linear velocity at the outermost periphery of each recording range / the linear velocity at the innermost periphery of each recording range is reduced to a specific range, and 11 recording ranges are set. For each recording range, the number of rotations shown in Table 3 is used. Rotate and measure the bit error rate of the information storage medium formed by the irradiation of the electron beam. The radial width of each recording range is set to be narrower on the inner peripheral side than on the outer peripheral side. In this embodiment, the high-frequency vibration amplitude (vibration frequency: 47.9 MHz) of the electron beam in each recording range is continuously increased by an offset vector of 20 nm from the inner periphery to the outer periphery, so that the width of the concave track on the entire surface of the mother substrate is almost constant. Fig. 8 is a diagram for explaining the electron beam irradiation conditions of a mother substrate in order to obtain the information recording medium of the third embodiment. The horizontal axis in FIG. 8 is the radius of the mother wafer on which the electron beam sensing resist film is formed on the silicon wafer (the left side in the figure is the inner periphery); the vertical axis is divided into specific widths for the radial direction. The recording range is the partial vector of the number of rotations, linear velocity, and vibration amplitude. As shown in Table 3, the number of rotations is fixed for each system in each recording range, and is set to decrease from the inner peripheral side toward the outer peripheral side of the mother film. The average linear velocity of each recording range is 1. 7 8 7 (recording range 5) to 1. 8 2 5 (recording range 1). The ratio of the maximum 値 to the minimum 平均 of the average linear velocity is 1.02, and is set to Almost sure. The ratio of the linear velocity on the innermost peripheral side to the linear velocity on the outermost peripheral side of each recording range that is evenly divided in the radial direction (the linear velocity on the outermost periphery of each recording range / the linear velocity on the innermost periphery of each recording range) Department 1. 丨 0 (I have recorded range 1 ~ record range 1 1 etc.). Table 3 shows the measurement results of the bit error rate. -39- 200535992 (36)

[Table 3] Record the number of rotations of the inner circumference and the outer circumference. The average line position error range of the inner circumference and outer radius. Radius (rpm). Speed Speed Speed Error Rate (mm) (mm) (m / sec) (m / sec) (m / sec) xlO5 1 20 22 855 1.738 1.912 1.825 1.06 2 22 24.2 780 1.727 1.900 1.814 1.07 3 24.2 26.6 705 1.710 1.880 1.795 1.06 4 26.6 29.3 645 1.713 1.886 1.800 1 .07 5 29.3 32.2 585 1.702 1.871 1.787 1.06 6 32.2 35.4 525 1.719 1.890 1.805 1.06 7 35.4 39 480 1.723 1.899 1.811 1 .06 8 39 42.9 435 1.715 1.886 1.801 1.06 9 42.9 47.2 405 1.684 1.853 1.769 1.11 10 47.2 5 1.9 360 1.705 1.875 1.790 1.06 11 5 1.9 57 330 1.712 1.880 1.796 1.06 by the first The result shown in Table 3, 'radial width of each division range', is set such that the inner peripheral side is narrower than the outer peripheral side, the width is increased toward the radial direction, and the amplitude of the high-frequency vibration of the electron beam in each recording range is set. The bias vector of 20 nm is increased from the inner periphery to the outer periphery; as a result, it is known that for all ranges of the information recording medium, the bit error rate is further reduced. (Example 4) As shown in Table 4, according to the electron beam irradiation method of the above-mentioned mother film, set 200535992 (37) to set 8 concentric circular recording ranges with a width of 5⑴η in the radial direction; for each recording range Rotate the master by the number of rotations shown in Table 4, and measure the bit error rate of the information storage medium formed by irradiation with an electron beam. In this embodiment, the high-frequency vibration amplitude (vibration frequency: 47.9 MHz) of the electron beam in each recording range is continuously increased from the inner periphery to the outer periphery so that the width of the recessed track on the entire surface of the mother substrate is almost constant. FIG. 9 is a diagram for explaining the electron beam irradiation conditions of the mother φ sheet in order to obtain the information recording medium of Example 4. FIG. The horizontal axis in FIG. 9 is the radius of the mother wafer on which the electron beam sensing resist film is formed on the silicon wafer (the left side in the figure is the inner periphery); the vertical axis is divided into 5 mm widths for the radial direction. The recording range, its number of rotations, linear velocity and bias vector. As shown in Table 4, the number of rotations is in each of the recording ranges. Each system becomes constant, and is set to decrease from the inner peripheral side toward the outer peripheral side of the mother film. The average linear velocity of each recording range is 1 · 9 7 9 (recording range 1) to 1 · 8 6 5 (recording range 6). The ratio of the maximum 値 to the minimum 平均 of the average linear velocity is 丨 · 06, and is set to φ is almost always 値. The ratio of the linear velocity on the innermost peripheral side to the linear velocity on the outermost peripheral side of each recording range that is evenly divided in the radial direction (the linear velocity on the outermost periphery of each recording range / the linear velocity on the innermost periphery of each recording range) The range is 1.25 (recording range 1) to 1 · 0 9 (recording range 8). Table 4 shows the measurement results of the bit error rate. -41-200535992 (38) [Table 4] Record the inner circumference and outer rotation, the inner circumference, the outer circumference, the average line bit error range, the radius, the speed, the speed, and the error rate (mm) (mm) (rpm) (m / sec) (m / sec) (m / sec) xl05 1 20 25 840 1.759 2.199 1.979 1.06 2 25 30 675 1.767 2.120 1.943 1.06 3 30 35 570 1 .790 2.089 1.939 1.06 4 35 40 480 1.759 2.0 10 1.884 1.06 5 40 45 420 1.759 1.979 1.869 1.06 6 45 50 3 75 1.767 1.963 1.865 1.06 7 50 55 345 1.806 1.987 1.896 1.08 8 55 60 3 15 1.814 1.979 1.896 1.10

From the results shown in Table 4, the amplitude of the high-frequency vibration of the electron beam in each recording range was increased from the inner periphery to the outer periphery, and it was found that for all ranges of the ® information recording medium, the bit error rate was even greater. reduce. In this way, according to the method for manufacturing a mother film for an information recording medium applicable to this embodiment, it is possible to suppress the axis variation of the electron beam and maintain a high degree of information recording position accuracy; moreover, by using a bias vector with the electron beam The combination of controls can reduce the bit error rate for the entire surface of the information recording medium. [Brief Description of the Drawings] FIG. 1 is a diagram illustrating a mother film irradiation device. -42- 200535992 (39) Figure 2 illustrates the recording range of the master film. Fig. 2 (a) shows the plural recording ranges divided evenly in the radial direction; Fig. 2 (b) shows the plural recording ranges with different widths. Fig. 3 is a diagram illustrating a state in which the electron beam is deflected in a direction almost perpendicular to the orbit. Fig. 4 is a diagram illustrating an information recording medium used in the embodiment. Fig. 5 is a diagram illustrating a bit error rate measuring device. Fig. 6 is a diagram for explaining the electron beam irradiation conditions of the mother substrate in order to obtain the information recording medium of the first embodiment. Fig. 7 is a diagram for explaining the electron beam irradiation conditions of the mother substrate in order to obtain the information recording medium of the second embodiment. Fig. 8 is a diagram for explaining the electron beam irradiation conditions of the mother substrate in order to obtain the information recording medium of the third embodiment. Fig. 9 is a diagram for explaining the electron beam irradiation conditions of the mother substrate in order to obtain the information recording medium of the fourth embodiment. Fig. 10 is a diagram illustrating the relationship between the radius position and the number of rotations of the master disc for optical discs for the CLV method. [Description of main component symbols] 1 〇: Mirror tower 1 1: Electron gun 1 2: Capacitive lens 1 3: Disconnect electrode 1 4: Aperture -43- 200535992 (40) 1 5: Deflecting electrode 16: Objective lens 1 7: Signal Source 18: Beam modulator 19: Electron beam 2 0: Sample chamber 21, 21a, 21b: Mother piece g 22: Rotary table 23: Mobile table 24: Guide screw 2 5: AC servo 2 6: Controller 4 1: Transparent substrate 4 2: Heat dissipation layer 4 3: Recording layer φ 44: Normal magnetic layer 45: Trigger layer 4 6: Regeneration layer 4 7: Reinforcement layer 4 8: Protective coating layer 5 1: Drive optical head 52: Bit error analyzer 5 6: Laser driver 5 7: Photomagnetic signal -44-200535992 (41) 58: Bandpass filter 5 9: Equalizer 1 0 0: Master film irradiation device 400: Information recording medium 5 00: Bit error measuring device

Claims (1)

200535992 (1) 10. Scope of patent application1. A method for preparing a master sheet for information recording media is directed to the use of a master sheet provided with an electron beam sensing resist film having a polarity change due to electron beam irradiation to irradiate electrons The electron beam irradiating means for the beam, the driving means for holding and rotating the mother sheet, and the changing means for changing the relative position of the electron beam irradiating means and the mother sheet in a horizontal direction, the mother sheet irradiating device irradiates the electron beam to form Information recording of spiral or concentric tracks Φ The recording medium uses a master film; it is characterized by dividing the range of the above-mentioned electron beam into a plurality of recording ranges that are divided into concentric circles in the radial direction; The irradiation amount of the electron beam per unit time in the range of the irradiated electron beam of the sheet is kept constant, and the number of rotations of the above-mentioned mother sheet is controlled to be constant for each of the above-mentioned recording ranges that are distinguished. 2 · The method of making a master film for an information recording medium as described in item 1 of the scope of the patent application, wherein the boundary φ of the above-mentioned divided recording range is defined from the outer recording area to the inner recording area. Those who have distinguished the above-mentioned recording range to control the increase in the number of rotations in stages. 03. The method of creating a master film for the information recording medium as described in the first or second scope of the patent application. The above-mentioned recording range of the above-mentioned master film that is distinguished is to control the ratio of the maximum linear velocity to the minimum linear velocity to 1.3 or less. 4 · The method of making a master film for an information recording medium as described in any one of the items 1 to 3 of the scope of patent application, wherein the above-mentioned master-46-200535992 (2) films are distinguished for each of the rotations The ratio between the maximum 値 of the average linear velocity and the minimum 値 of the average linear velocity between the above recording ranges is controlled to be less than or equal to 1.1. 5. The method of making a master film for an information recording medium as described in any one of the scope of claims 1 to 4, wherein the width of the above-mentioned divided recording range is set on the inner peripheral side of the master film , Which is narrower than the width of the above-mentioned divided recording range provided on the outer peripheral side of the above-mentioned mother film. 6 · As described in any of items 1 to 5 of the scope of the patent application. • A method of making a master film for the information recording medium, in which 'system use is more equipped with the ability of the electron beam to be almost perpendicular to the above track. The mother plate irradiation device of the electron beam deflection means that vibrates in the direction irradiates the electron beam; for each of the above-mentioned recorded ranges, the deviation vector of the electron beam is increased and controlled from the inner periphery to the outer periphery. 7 · —A mother sheet irradiation device for an information recording medium, which is characterized by having an electron beam irradiation means for irradiating an electron beam with a film having a resistance change of the electron beam induced by the electron beam ^ φ agent film; And driving means for holding and rotating the mother sheet; and changing means for changing the relative position of the electron beam irradiation means and the mother sheet in a horizontal direction; and dividing the range of the mother sheet irradiating the electron beam into a radial direction Divided into concentric circular plural recording ranges, and keeping the amount of electron beam irradiation per unit time in each of the divided recording ranges fixed, and for each of the divided recording ranges, the number of rotations of the master film is made Control means for certain control. -47- 200535992 (3) 8 · The master film irradiation device for the information recording medium as described in item 7 of the scope of patent application, which further has a boundary portion for the above-mentioned recording range which is distinguished from the outer periphery. The division of the above-mentioned record range toward the inner range of the above-mentioned record range is controlled in stages to increase the number of rotations to control the hand killer. 9 · The parent piece irradiation device for the information recording medium as described in item 7 or item 8 of the patent application scope, wherein the number of rotations of the parent piece is changed for the boundary portion of the distinguished recording range ^ φ Come with 10 spins or less • Performer. 10. The master film irradiating device for the information recording medium as described in any one of items 7 to 9 of the scope of the patent application, wherein the master film irradiation device further includes a rotation control of the master film and outputs the rotated master film at the same time. For angle information, rotation angle information output means. 1 1 · As claimed in § 靑 Patent Chaowei, any of the items 7 to 10 described in the information recording medium for the master film irradiation device, which is more equipped with control. Φ said electron beam bias vector Control-oriented people. 12. The device for irradiating a mother sheet for an information recording medium as described in item 11 of the scope of patent application, wherein the above-mentioned deflection control means of the electron beam is an electrostatic deflection. 1 3 · A method for manufacturing an information recording medium, which is a method for manufacturing an information recording medium having a specific spiral or concentric circular track, and is directed to a master having a master sheet for forming an information recording medium including a specific concave track Sheet forming process and forming a metal mold having the shape of the concave rail of the mother sheet for the information recording medium formed thereon, a mold forming process; and -48- 200535992 (4) and the above-mentioned mother sheet project, having Electron beam irradiation means, and means for changing the relative position of the mother sheet in the horizontal direction, and driving means for rotating the mother sheet, specific electron beam irradiation devices; characterized in that the mother part is rotated by the driving means. The electron beam sensing resist film on the surface of the sheet is irradiated with the electron beam by the above electron beam irradiation means, and then the above-mentioned changing means is used to change the relative position of the electron beam irradiation means and the horizontal direction of the mother sheet, and the electron beam irradiation means is used to When the electron beam φ is irradiated, the area of the mother substrate to be irradiated with the electron beam is divided into radial directions. Cutting a plurality of concentric recording range, the range of electron beam irradiation of the master of the electron beam irradiation amount per unit of time remains constant, and so that the number of rotation of the master to be constant electron beam irradiation. 14. An information recording medium is an information recording medium on which a spiral or concentric circular recording track is formed on a substrate; it is characterized in that it has a plurality of recording ranges divided into concentric circles with a specific width on the substrate, • In the boundary part of each of the above-mentioned recording ranges, the width of the substrate in the radial direction is a migration range of 10 tracks or less. 15. The information recording medium described in item 14 of the scope of patent application, wherein the ratio of the radius position on the outer peripheral side to the radius position on the inner peripheral side of each of the above-mentioned recorded ranges is 1.3 or less. By. ] 6. The information recording medium described in item 14 or item 15 of the scope of patent application, wherein the width of the above-mentioned divided recording range provided on the inner peripheral side of the substrate is wider than that provided in the The width of the above-mentioned divided recording range on the outer peripheral side of the substrate is narrow. -49-