200535271 五、發明說明（1) 【發明所屬之技術領域】 本發明是有關於一種化學氣相沈積機台，且特別是有關於 一種高密度電漿化學氣相沈積機台。 【先前技術】 近年來半導體工業發展快速，以致各項製程技術與應用材 料皆大幅開發，以持續提升積體電路中元件的積集度及操 作的效能。一般而言，半導體元件所需的薄膜材料，不論 是導體、半導體、或介電材料，皆可藉由化學氣相沈積 (chemical vapor deposition; CVD)製程而得。常見的化 學氣相沈積方法有常壓化學氣相沈積（a t m 〇 s p h e r i c pressure chemical vapor deposition; APCVD)製程、低 壓化學氣相沈積（low pressure chemical vapor deposition; LPCVD)製程、次大氣壓化學氣相沈積 (sub-atmosphere chemical vapor deposition； SACVD) 製程、電漿輔助化學氣相沈積（plasma enhanced chemical vapor deposition; PECVD)製程、及高密度電 漿化學氣相沈積（high density plasma chemical vapor deposition; HDP CVD)製程等，其中高密度電漿化學氣相 沈積製程常應用於次微米以下製程的隙縫填補及隔離區域 之形成。 第1 A圖為習知高密度電漿化學氣相沈積機台之反應室的上 視圖。第1 B圖則為根據第丨A圖所示之反應室區域i 6 〇的局 部放大示意圖。分別參照第1級丨B圖，反應氣體1 4 0由喷200535271 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a chemical vapor deposition machine, and more particularly to a high-density plasma chemical vapor deposition machine. [Previous technology] The semiconductor industry has developed rapidly in recent years, so that various process technologies and application materials have been greatly developed to continuously improve the integration degree and operating efficiency of components in integrated circuits. In general, the thin film materials required for semiconductor devices, whether they are conductors, semiconductors, or dielectric materials, can be obtained by a chemical vapor deposition (CVD) process. Common chemical vapor deposition methods include the atmospheric pressure chemical vapor deposition (APCVD) process, low pressure chemical vapor deposition (LPCVD) process, and sub-atmospheric pressure chemical vapor deposition (LPCVD) process. sub-atmosphere chemical vapor deposition (SACVD) process, plasma enhanced chemical vapor deposition (PECVD) process, and high density plasma chemical vapor deposition (HDP CVD) process Among them, the high-density plasma chemical vapor deposition process is often applied to the gap filling and the formation of isolation regions in the sub-micron process. Figure 1A is a top view of a reaction chamber of a conventional high-density plasma chemical vapor deposition machine. Fig. 1B is an enlarged view of a part of the reaction chamber area i 6 〇 shown in Fig. 丨 A. Refer to the first stage and the B diagram respectively.
200535271 五、發明說明（2) 嘴1 2 0進入反應室1 0 0後，藉著電漿内的高能電子而解離 (ionize)，被解離的氣體分子並在晶圓180表面與其他的 氣體分子反應而生成沈積薄膜。然而，由於喷嘴1 2 0被設 置與反應室1 0 0周圍之切線垂直，且指向晶圓1 8 0之中心， 因此反應氣體1 4 0在反應室1 0 0内會呈徑向分佈，而容易產 生沈積薄膜厚度不均勻的現象。例如，施以較多反應氣體 1 4 0時，易促使氣體分子於晶圓1 8 0中間區域反應而導致晶 圓1 8 0中間區域之沈積薄膜較厚。反之，若施以較小流量 的反應氣體1 4 0，則易造成晶圓1 8 0周圍區域之沈積薄膜偏 厚的問題。 【發明内容】 因此本發明之目的就是在提供一種喷嘴裝置排列結構，用 以改善沈積薄膜厚度不均的問題。 根據本發明之上述目的，提出一種高密度電漿化學氣相沈 積機台，其具有複數個被傾斜放置的喷嘴裝置，以使機台 之反應室内的氣體分佈更均勻，進而生成一均勻度佳之沈 積薄膜。 依照本發明一較佳實施例，複數個喷嘴裝置被設置與反應 室周圍之切線夾一預定角度，且使其氣體輸送方向偏離晶 座之中心軸，其中，喷嘴裝置更可設置與晶座平面平行或 與晶座平面夾一角度。如此，當反應氣體進入反應室後會 產生漩渦狀的流動，因而帶動氣體更均勻分佈於反應室 中，故可沈積均勻度更佳之薄膜。200535271 V. Description of the invention (2) After the mouth 120 enters the reaction chamber 100, it is ionized by the high-energy electrons in the plasma. The dissociated gas molecules are on the surface of the wafer 180 with other gas molecules. The reaction produces a deposited film. However, since the nozzle 120 is arranged perpendicular to the tangent line around the reaction chamber 100 and points to the center of the wafer 180, the reaction gas 140 is distributed radially in the reaction chamber 100, and The phenomenon of uneven thickness of the deposited film is easy to occur. For example, when more reactive gas is applied to 140, gas molecules are easily caused to react in the intermediate region of the wafer, resulting in a thicker deposited film in the intermediate region of the crystal circle. Conversely, if a small flow rate of the reactive gas 140 is applied, the problem of a thicker deposited film in the area around the wafer 180 may easily occur. SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a nozzle device arrangement structure to improve the problem of uneven thickness of a deposited film. According to the above object of the present invention, a high-density plasma chemical vapor deposition machine is provided, which has a plurality of nozzle devices placed obliquely to make the gas distribution in the reaction chamber of the machine more uniform, thereby generating a uniformity. Deposition of thin film. According to a preferred embodiment of the present invention, a plurality of nozzle devices are disposed at a predetermined angle with a tangent line around the reaction chamber, and the gas conveying direction thereof is deviated from the central axis of the crystal base. Among them, the nozzle device can be further disposed with the plane of the crystal base Parallel or at an angle to the plane of the base. In this way, when the reaction gas enters the reaction chamber, a swirling flow will be generated, so that the gas is more uniformly distributed in the reaction chamber, so a film with better uniformity can be deposited.
第7頁 200535271 五、發明說明（3) 【實施方式】 為了得到較佳均句 學氣相沈積機台之 應室中氣體的分佈 詳述如下。 度之沈積薄膜，本發 喷嘴裝置以特殊的^ 情形，其較佳實施例 明將高密度電漿化 式排列，來改變反 ，將參照附件圖式 參照第2A圖，其為价n7J |枚 # ^ ,μ ^ ^ ia ,, I、?、本4明一較佳實施例的一種高密度 一 一曰冋〇。、機口之反應室的上視圖。如第2A圖所 不e \ 〇放置於一晶座（susceptor ) 29 0上，且位於 晶f 之中央。複數個噴嘴裝置（nUZZle) 220則設置於反 應室2 0 0周圍’以輪送反應氣體240至反應室2 0 0中。參照 第⑼圖’其為根據第2A圖所示之反應室區域2 6 0的局部放 大圖。如第2B圖所示，此些喷嘴裝置22〇更被設置與反應 室2 0 0周圍之切線夾一預定角度（Θ1)，且使喷嘴裝置2 2 0之 氣體輸送方向偏離晶座2 9 0之中心軸。其中，噴嘴裝置2 2 〇 的設置數量可依反應室大小及形狀而定，在此較佳實施例 中，則以每三個喷嘴裝置2 2 0為一組而將八組喷嘴裝置2 2 〇 平均分散設置於反應室2 0 0周圍。此外，喷嘴裝置之材質 可由一陶瓷材料所構成，如氧化鋁等。 由於喷嘴裝置2 2 0與反應室2 0 0周圍之切線夾一預定角度而 偏離晶座的中心軸，因此當反應氣體2 4 0進入反應室2 〇 〇 後，會以旋渦狀的流動方式來帶動反應氣體2 4 0均勻分佈 於反應室2 0 0内，而使晶圓2 8 0上所生成的沈積薄膜具有較 200535271 五、發明說明（4) 佳的均勻度。再者，若一喷嘴裝置2 2 0喪失傳送氣體之功 能時，因反應氣體2 4 0為漩渦狀的流動，故可藉由相鄰之 噴嘴裝置2 2 0所送出的反應氣體2 4 0來填補其空缺位置，而 避免晶圓2 8 0上部分區域之薄膜沈積太薄的問題。另外， 上述之預定角度 （Θ1)較佳的為約15度至60度，更佳的角度 則約為3 0度至4 5度。 第3圖為依照本發明上述較佳實施例之喷嘴裝置排列結構 的示意圖。如第3圖所示，除了將噴嘴裝置3 2 0放置於一平 行晶座3 90之平面（x-y平面）上，並使喷嘴裝置3 2 0的氣體 輸送方向偏離晶座3 9 0中心軸31 0—預定角度 （Θ1)外，亦可 將喷嘴裝置3 2 0放置與晶座3 9 0平面呈一夾角 （Θ2)，即箭頭 方向340與X-y平面的夾角，此夾角可為約1 5度至60度。如 此亦能造成反應室内之氣體以漩渦狀的方式流動，而均勻 分佈於反應室中。 由上述本發明較佳實施例可知，應用本發明之傾斜放置的 噴嘴裝置，可改變反應氣體於高密度電漿化學氣相沈積機 台之反應室内的流動方式，進而使反應氣體更均勻地分佈 於反應室中。因此反應後的氣體分子將均勻地沈積於晶圓 上，故可改善沈積薄膜厚度不均的問題。 雖然本發明已以一較佳實施例揭露如上，然其並非用以限 定本發明，任何熟習此技藝者，在不脫離本發明之精神和 範圍内，當可作各種之更動與潤飾，因此本發明之保護範 圍當視後附之申請專利範圍所界定者為準。Page 7 200535271 V. Description of the invention (3) [Embodiment] In order to obtain a better uniform sentence, the gas distribution in the reaction chamber of the vapor deposition machine is described in detail below. In the case of a thin film, the nozzle device of the present invention has a special case. The preferred embodiment of the present invention is to arrange the high-density plasma type to change the inverse. # ^, μ ^ ^ ia ,, I,?, a high-density embodiment of the preferred embodiment of the present invention, namely 冋 〇. Top view of the reaction chamber of the machine port. As shown in Figure 2A, e \ 〇 is placed on a susceptor 290, and is located in the center of the crystal f. A plurality of nozzle devices (nUZZle) 220 are disposed around the reaction chamber 200 'to feed the reaction gas 240 to the reaction chamber 200 by turns. Referring to Fig. 1 ', it is a partially enlarged view of the reaction chamber area 260 according to Fig. 2A. As shown in FIG. 2B, these nozzle devices 22 are set at a predetermined angle (Θ1) from the tangent line around the reaction chamber 200, and the gas transport direction of the nozzle device 2 2 0 is deviated from the wafer seat 2 9 0. Center axis. The number of nozzle devices 2 2 0 can be set according to the size and shape of the reaction chamber. In this preferred embodiment, every three nozzle devices 2 2 0 are used as a group and eight groups of nozzle devices 2 2 0 are used. They are evenly distributed around the reaction chamber 2000. In addition, the nozzle device may be made of a ceramic material such as alumina or the like. Since the nozzle device 2 2 0 and the tangent line around the reaction chamber 2 0 are at a predetermined angle and deviate from the central axis of the crystal seat, when the reaction gas 2 4 0 enters the reaction chamber 2 0 0, it will flow in a swirling manner. The reaction gas 2 40 is driven to be uniformly distributed in the reaction chamber 200, so that the deposited film generated on the wafer 2 80 has a better uniformity than that of 200535271 V. Invention Description (4). In addition, if a nozzle device 2 2 0 loses the function of transmitting gas, the reaction gas 2 4 0 flows in a vortex, so the reaction gas 2 4 0 sent by an adjacent nozzle device 2 2 0 Fill the vacant position, and avoid the problem of too thin film deposition in some areas on the wafer 280. In addition, the above-mentioned predetermined angle (Θ1) is preferably about 15 degrees to 60 degrees, and a more preferable angle is about 30 degrees to 45 degrees. Fig. 3 is a schematic view showing the arrangement of the nozzle device according to the above-mentioned preferred embodiment of the present invention. As shown in FIG. 3, except that the nozzle device 3 2 0 is placed on a plane (xy plane) parallel to the crystal base 3 90 and the gas transport direction of the nozzle device 3 2 0 is deviated from the central axis 31 9 of the crystal base 31 0—In addition to the predetermined angle (Θ1), the nozzle device 3 2 0 can also be placed at an angle (Θ2) with the crystal plane 390, which is the angle between the direction of the arrow 340 and the Xy plane, and this angle can be about 15 degrees To 60 degrees. This can also cause the gas in the reaction chamber to flow in a swirling manner and be evenly distributed in the reaction chamber. It can be known from the above-mentioned preferred embodiments of the present invention that the application of the inclined nozzle device of the present invention can change the flow mode of the reaction gas in the reaction chamber of the high-density plasma chemical vapor deposition machine, thereby making the reaction gas more uniformly distributed. In the reaction chamber. Therefore, the gas molecules after the reaction will be uniformly deposited on the wafer, so the problem of uneven thickness of the deposited film can be improved. Although the present invention has been disclosed as above with a preferred embodiment, it is not intended to limit the present invention. Any person skilled in the art can make various changes and decorations without departing from the spirit and scope of the present invention. The scope of protection of the invention shall be determined by the scope of the attached patent application.
200535271 圖式簡單說明 【圖式簡單說明】 為讓本發明之上述與其他目的、特徵、和優點能更明顯易 懂，配合所附圖式，加以說明如下： 第1 A圖係繪示習知高密度電漿化學氣相沈積機台之反應室 的上視圖； 第1 B圖係繪示根據第1 A圖所示之反應室的局部放大圖； 第2 A圖係繪示依照本發明一較佳實施例的一種高密度電漿 化學氣相沈積機台之反應室的上視圖； 第2 B圖係繪示根據第2 A圖所示之反應室的局部放大圖；以 及 第3圖係繪示依照本發明一較佳實施例的喷嘴裝置排列結 構的示意圖。 【元件代表符號簡單說明 100、200 反應室 1 4 0、2 4 0 反應氣體. 180、 280 晶圓 310 中心軸 1 2 0、2 2 0、3 2 0 喷嘴裝置 160、26 0 區域 2 9 0、3 9 0 晶座 3 4 0 箭頭方向200535271 Brief description of the drawings [Simplified description of the drawings] In order to make the above and other objects, features, and advantages of the present invention more comprehensible, in conjunction with the attached drawings, the description is as follows: Figure 1 A is a drawing showing the conventional Top view of the reaction chamber of the high-density plasma chemical vapor deposition machine; Figure 1B is a partial enlarged view of the reaction chamber shown in Figure 1A; Figure 2A is a diagram illustrating a A top view of a reaction chamber of a high-density plasma chemical vapor deposition machine according to a preferred embodiment; FIG. 2B is a partial enlarged view of the reaction chamber shown in FIG. 2A; A schematic diagram of the arrangement of the nozzle device according to a preferred embodiment of the present invention is shown. [A brief description of the component representative symbols , 3 9 0 Crystal seat 3 4 0 Arrow direction
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