TW200528387A - Micromechanical actuator with multiple-plane comb electrodes and methods of making - Google Patents

Abstract

A micromechanical component (MEMS actuator) comprising a movable element with comb electrodes, and two stationary elements with electrodes aligned and stacked on each other but electrically insulated by a layer of insulation material. The movable element is supported by multiple torsional hinges an suspended over a cavity such that the element can oscillate about an axis defined by the hinges. The comb electrodes of the movable element are interdigitated in the same plane with the comb electrodes of one stationary element to form an in-plane comb actuator. The comb electrodes of the movable element are interdigitated in an elevated plane with the comb electrodes of another stationary element to form a vertical comb actuator. As a result, the micromechanical component is both an in-plane actuator and a vertical comb actuator, or a multiple-plane actuator. Methods of fabricating such actuator are described in details.

Description

200528387 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a micro-electro-mechanical actuator having a plurality of comb-shaped electrodes and a method for manufacturing the same. Vertical comb-shaped actuator, or a complex surface actuator. [Prior Art] MEMS mirrors have great potential in a wide range of optical applications, including optical communication, confocal microscopes, laser radars, and barcode scanning (Bar code scanning), laser printing (laser

Prin's light display is special and scaled down for the same type of use; counts a piece of electricity and the pieces are in the pinion and the ting) and the projection display (projection display), etc .; while learning to conceal applications such as laser columns In laser printing and scanning projection display, the mirror must achieve a large optical scanning angle at a frequency, and a large optical angle is also the optical resolution. The key to the production of σπ volume, and Saying 'design' ^ an actuator that generates power is challenging or difficult. At present, multiple multi-state MEMS actuator designs have been proposed to guide or scan the beam for various operations in order to achieve the deflection or movement of the micro-component outside the wafer surface. The movable part can be driven by force by a fixed part with opposite electrodes, such as: US 6,595,055, revealing a micro-electro-mechanical /, with a oscillating body and an outer frame or a fixed layer, located on the same / chip surface, the capacitive type is driven Between the side of the body and the outer frame layer, when the capacitance changes, the swinging body swings out of the wafer surface, and its structure is suspended by an insulating layer and a carrier board to allow the swinging body to have out-of-plane (0 ut_〇f-plane) action; Selected Topics in Quantum

200528387 V. Description of Invention (2)

Electronics) 2000, Vol. 6, Issue 5, "Large Deflection Micromechanical Scanning Mirrors for

Laser Scan and Pattern Generation (Linear scanning and generation of large-deflected micro-electromechanical scanning mirrors) n described that the scanning mirror can scan at a large angle at low driving voltage and low frequency; however, the movable comb-like Electrodes located on the periphery of the mirror will increase the dynamic deformation of the mirror or actuator; while on a high-speed scanning application device such as printing or scanning display, excessive dynamic deformation of the scanning mirror will increase the amount of deviation and significant deterioration of the reflected light. Optical resolution; and additional electrodes that may be insulated from the structure may interfere with the symmetry of the structure and enable rapid mirror swing. Moreover, the structure only allows analogue operation (scanning) of its actuator, but not digital operation (static angular positioning). Another example is the US patent application US2003 / 0019832 "STAGGERED TORSIONAL ELECTROSTATIC COMBDRIVE AND METHOD OF FORMING SAME", which discloses a comb-driven actuator and its process, and the actuator has a stationary comb teeth assembly. ) 'And a moving comb teeth assembly, while a mirror and a pair of twisted hinges are provided with a movable comb teeth assembly; and when stopped, the movable comb teeth assembly is all located in a fixed comb A predetermined vertical distance above the dentition. The actuator can scan at a relatively high frequency and the dynamic deformation of the mirror surface is below the Ray leigh limit. However, whether or not a relatively high driving voltage is cited, the optical scanning angle that affects the optical resolution is significantly smaller than that of US6, 5 9 5, 0 55; and its other design is to stack an additional fixed comb-shaped tooth set on the original Above the fixed comb tooth set, it is used for the purpose of sensing the capacitance between the fixed comb tooth set and the scanning frequency of the movable part (although the frequency modulation

200528387 V. Description of the invention (3) Method not described). In the process steps, one of the steps is to open a correction window, which is etched through the top wafer and reaches the insulating oxide layer, and then removes the oxide layer, so that the long wafer on the bottom wafer is used for correction in the subsequent steps; If the top wafer is designed to be thick for the purpose of reducing dynamic deformation, the above steps will be time consuming and therefore expensive. Another example is the US patent application US2 0 03/0 0 732 6 1 "SELF-ALIGNED VERTICAL COMBDRIVE ACTUATOR AND METHOD OF FABRICATION", which reveals a vertical comb drive actuator, which There is a small gap between them, a bilateral vertical comb drive actuator for dual-mode actuation, a vertical piston and scan, and the manufacturing process of the above components. Regardless of the disclosed automatic correction of the comb-shaped teeth set described in the process steps, the vertical comb-driven actuators need to be skilled in the south to etch the bottom comb-shaped teeth and twice the deep silicon on the bottom substrate. Trench Etching. For dual-mode comb drive activities, the process steps begin with the etching of deep silicon trenches in a device layer on a silicon-on-insulator (Silicon-0n-insulat0r) wafer, and then fused to another silicon wafer, thereby becoming Two complex five-layer structures, two insulating oxide layers and three silicon layers. In addition, in order to form a comb-shaped tooth at the bottom, two-times skilled auto-correction technique and double-deep deep etched trench etching are still needed. [Abstract] The purpose of the present invention is to provide a micro-electromechanical actuator and a manufacturing method thereof. The micro-electromechanical actuator (MEMS actuator) is composed of a horizontal (in-plane) comb electrode and a cavity with a specific depth. The support is composed of a carrier board.

200528387 V. Description of the invention (4) The object of the present invention is to provide a micro-electromechanical actuator and a manufacturing method thereof, and the micro-electromechanical actuator (MEMS actuator) is composed of a horizontal — 1 \ Ail ~ " pIBn6y vertical comb. The vertical comb-shaped electrode is used to increase the actuation force of the movable member on the actuator. Another object of the present invention is to provide a micro-electromechanical actuator and a manufacturing method thereof. The actuator (MEMS actuator) is composed of horizontal (in-piane) and dual-side vertical comb electrodes. The bilateral vertical comb electrodes are used to increase the driving force X (actuation force) of the movable member on the actuator. Another object of the present invention is to provide a method for supporting and drawing out the bottom electrodes of the vertical comb electrodes from the vertical comb electrodes. Another object of the present invention is to provide a torsion hinge with built-in extra electrodes, and the built-in (bui 11 i η) electrode is used to increase the effectiveness of the hinge. The torsional rigidity enables the resonance frequency of the movable member in the actuator to be adjusted. Another object of the present invention is to provide a method for reducing the effective torsional rigidity of a torsional hinge, so that the resonance frequency (RSonance frequency) of a movable member in an actuator can be adjusted. ▲ In order to make the above and other objects, features, and advantages of the present invention more comprehensible, the following describes the preferred embodiments in detail with the accompanying drawings, as follows:

200528387 V. Description of the invention (5) [Embodiment] Refer to Figures 1A, 1B, and 1C, where the top layer 10 is composed of a fixed member 11 and a movable member 12 as shown in Figure ία, and The fixed member 1] t and the movable member 1 2 s are made of conductive material, which is usually a single crystal (sing 1 ecrysta 1 silicon); and the movable member 12 includes a comb electrode 13 and a multiple torsional hinge ) 14 supports, and is electrically isolated from the fixing member 11. The fixed member 11 is provided with a comb electrode 5 and the comb electrode 5 is cross-aligned with the comb electrode 1 3 of the movable member 12 on the same horizontal plane, so that a horizontal comb electrode is formed on the top layer to drive the actuator. (In —plane comb-drive actuator *). The intermediate layer 20 is made of a non-conductive material, as shown in FIG. 1B, and is usually silicon dioxide. The bottom layer 30, as shown in FIG. 1C, includes a cavity 31 and is twisted. The fixed comb electrode 3 2 on one side of the hub 1 4 is made of a conductive material, usually a single crystal; ^; and the fixed comb electrode 3 2 on the bottom layer 30 is in a comb shape with the top layer 10 movable part 12. The electrodes 1 3 are arranged crosswise, so that the movable member 12 and the bottom layer 30 form a vertical comb-shaped electrode drive actuator (verticai comb drive actuator). The middle layer 20 and the bottom layer 30 can support the top layer 10, and the middle layer 20 can isolate the top layer 10 and the bottom layer 30. With the above structure, a molded micro-electromechanical system actuator (MEMS actuator 'micro electronic mechanic system actuator) is manufactured. It has the function of an in-plane and vertical comb-drive actuator. In the MEMS actuator 1, the movable part 12 of the top layer 10 is usually a ground (GND). While the fixing member 11 of the top i0 is connected to a voltage source AC1, and the bottom layer 30 is connected to another voltage source AC2; the third figure is the mirror tilt (or twist)

Page 11 200528387 V. Description of the invention (6) Phase and amplitude relationship between the angle of rotation and the voltage sources AC1 and AC2; and the waveforms of the voltage sources AC1 and AC2 can be square, triangular, sinusoidal, sinusoidal, Half-sinusoidal lines, or other shapes to meet the needs of special angular velocity. Referring again to Figures ID, 1E, and 1F, it is a flowchart of the process steps of the MEMS actuator shown in Figures 1A, 1B, and 1C. The first step is shown in Figure 1D. The back surface 41 of the wafer 40 (that is, the bottom layer 40) is etched or fabricated with a pattern for alignment 44, and the wafer 40 (that is, the bottom layer 40) may be a single crystal crystal sil (singie crystal sil icon); Then, a deep reactive ion etching (DRIE) method is used to etch the front surface 42 of the wafer 40 (ie, the bottom layer 40), and align the pattern 43 and the back surface 41 ( pattern f〇r

al ignment) 44 calibration; second step! bond) on the front, back, 42 and 41 above) to another wafer 50 (ie, top layer 50)) and coated with a silicon dioxide layer 60 to increase the welding strength, and after welding 50, intermediate layer 60, bottom layer Three layers of 40% are ground and polished to the desired thickness and required. 'The top layer 50 is reused by the etched shape 5 of the DRIE top layer 50 and the 45 and the 45 pieces to be removed and fixed. Building a ship: ί: 2:52 is made; Cheng; again refer to Figures 1G and ι, and install as shown in Figure 1E, refining (fusion has been engraved on the wafer 4 0 (that is, on the bottom 40, The other wafer 50 (that is, the top layer 50 (that is, the middle layer 60)), and the wafer 70 formed by the beating process becomes a structure including a top layer, and the top layer 50 can be evaluated for surface quality; the third step is The first F pattern is engraved downward to the intermediate layer 60, and the alignment pattern 4 4 of the surface 41 is aligned, then only silicon oxide (intermediate layer 60) is formed, and three layers are formed.

It is the MEMS shown in Figures IA, 1B and 1C.

200528387 V. Description of the invention (7) Another process flow chart of the actuator. As shown in FIG. 1G, the DR IE method is used to start from a silicon-on-insulator (SO I, silicon-on-insulator). The back of the wafer) 80 is etched to the middle layer of silicon dioxide 82; as shown in the first figure, 'from the front surface of the SOI wafer 80 to 830 yuan to the middle layer of SiO2, just move it again. Except for the silicon dioxide (intermediate layer) connected to the fixed part 8 4, the movable part 85 in the three-layer structure is manufactured and formed. Referring again to FIGS. 2A to 2D and FIG. 3, it is a schematic diagram of the operating state of the MEMS actuator 1 shown in FIG. 1 'wherein, as shown in FIG. 2A, the movable member 12 is grounded to GND' and The fixed comb electrode 15 of the top layer 10 and the fixed comb electrode 3 2 of the bottom layer 30 are respectively connected to the first and second (AC1) voltage sources AC1 and AC1 of the AC power source (a C v ο 1 tages 〇urce), so that The top member 10 and the movable member 12 form a horizontal comb electrode drive actuator (in-plane CC) mb-drive

actuator 30) and the bottom 30 fixed member 32 and the top 10 movable member 12 form a vertical comb electrode drive actuator (verticai comb-drive actuator), and the movable member 12 can drive the electrostatic force of the horizontal comb drive actuator Celectfostatic f〇rce) The electrostatic attraction generated by the unbalanced or vertical comb drive actuator starts to swing relative to the torsion hub 14; as shown in Figures 2A and 2B, between the horizontal comb drive electrodes The unbalanced force can be generated by manufacturing margin or deliberate design structure, and the electrostatic attraction between the vertical comb-shaped drive electrodes (as shown by the arrow in Figure 2A) can cause the movable member 12 to twist the pivot 丨 4 as Rotate the shaft to the maximum inclination angle; as shown in Figures 2B and 2C, after the movable member has reached the maximum inclination angle, the electrostatic attraction from the horizontal comb-shaped drive electrodes can act on the movable member (as shown in Figure 2B). (Shown by the arrow), return the movable member 12 to the horizontal position;

Page 13 200528387 V. Description of the invention (8), 2D As shown in Figure D, when the movable member 12 continues to rotate to reach another maximum inclination angle, the electrostatic attraction from the horizontal comb-shaped driving electrode acts on the movable member 1 again. 2, make the movable member 12 return to the horizontal position again, and complete a swing cycle (cyc 1 e) ° Refer to Figure 3 again, the movable member 12 is usually designed to swing at or near the main resonance frequency, and the movable The comb electrode 1 3 of the component 12 is grounded to GND, while the first voltage source AC1 is applied to the horizontal comb electrode 1 5 of the top 10 fixing member 1 and the second voltage source AC2 is applied to the bottom 30 fixed comb. Electrode 32; the frequency of the first voltage source AC1 is usually twice the swing frequency of the movable member 12, and the frequency of the first voltage source AC2 is usually equal to the swing frequency of the movable member 12; and the first and second electric mills The waveforms of the sources AC1 and AC2 can have various shapes so that the movable member can achieve the desired angular velocity. Generally, when the waveform is square, the amplitude given by the voltage sources AC1 and AC2 is', Drives the movable part 12 to the maximum speed with the best efficiency . As shown in FIG. 4, it is not intended that the movable member 12 of the MEMS actuator 1 of the present invention rotates to the second body with the maximum rotation angle. From the above, it can be seen that the M EMS actuator 1 of the present invention is an actuator that combines horizontal and vertical comb-shaped drive electrodes to drive the movable member 12 to swing at a high frequency and a large angle; moreover, the cavity located on the bottom layer 30 31 As shown in Figures ID, IE, and 1F, one, the depth of the cavity 31 can be appropriately designed to become the stopping point of the movable member 12, and the excessive swing tilt of the lower movable member 12 can be avoided to avoid ... … The mechanically damaged arm 0 of the actuator. Refer to Figures 5A, 5B, and 5C, which are top views of the three-layer structure of the MEms actuator 2 according to another embodiment of the present invention. 5a

200528387 V. Description of the invention (9) shows that it consists of a fixed member 91 and a movable member 92, and the fixed member 91 and the movable member 92 are made of conductive materials, usually single crystal si (single crystal si 1 i con); and the movable member 9 2 includes a comb electrode 9 3 which is supported by a multiple torsional hinge 94 (multiple torsional hinge) and is electrically isolated from the fixed member 91; and the fixed member 91 is provided with a comb electrode 9 5 The comb electrode 95 and the comb electrode 93 of the movable member 92 cross at the same horizontal plane, so that the top layer 90 forms a horizontal in-plane comb-drive actuator. The intermediate layer 100, as shown in FIG. 5B, is made of a non-conductive material, usually silicon dioxide; the bottom layer 110, as shown in FIG. 5C, includes a cavity 1 1 1 and The fixed comb electrode 1 1 2 is made of conductive material, usually single crystal silicon; and the fixed comb electrode 1 1 2 on the bottom layer 1 10 is electrically isolated into two pairs of halves 1 1 2 ', 1 1 2 π and are respectively located on different sides of the torsion hub 94, and the fixed comb electrode 11 2 on the bottom layer 11 0 intersects with the comb electrode 93 of the top layer 9 0 movable member 9 2, so that the movable member 92 and The bottom layer 110 forms a vertical comb-drive actuator with a dual-side driving capability. The middle layer 100 and the bottom layer 110 can support the top layer 90, but the middle layer 100 can isolate the top layer 90 and the bottom layer 110. With the above structure, the formed micro-electromechanical actuator (MEMS actuator) 2 has horizontal and vertical The function of comb electrode drive actuator (丨 n _ p 1 a η ε and vertical comb-drive actuator). Referring to FIGS. 6A to 6D, it is a flowchart of the process steps of the MEMS actuator 2 shown in FIGS. 5A to 5C. The first step is shown in FIG. D, starting with a semiconductor wafer 120 ( That is, the back surface 121 of the bottom layer 120 is etched or other methods are used to produce an alignment pattern 124.

Page 15 200528387 V. Description of the invention (ο) The wafer 120 may be single crystal silicon (Singie crystai siiicon); then the DRIE method (deep reactive ion etching, deep reactive ion) is used.

Etching) The front face 1 2 2 of the wafer 1 2 0, and the alignment pattern 123 of the front face 1 2 2 and the alignment pattern 124 of the back face 121 are aligned; and the cavity 125 size and depth, and fixed vertical comb electrodes 126 have been completed. The second step is shown in FIG. 6B. Weld the previously etched wafer j 2 0 to another wafer 130 (that is, the top layer 130), and coat another wafer 130 with a layer of dioxide. The silicon layer 1 40 (ie, the intermediate layer 1 40) is then subjected to a fire treatment to increase the welding strength; after the welding is completed, the wafer 150 becomes a three-layer structure, and the top layer 130 can be ground and polished to the desired thickness. The thickness and the required surface quality; the third step is shown in Figure 6C. After welding, the backside of the wafer 丨 5 〇 (that is, the bottom 丨 2 ○ ringing back 1 2 1) is divided into two using the DR IE method. For the half part 150, 150 "< and because the bottom layer 120 is welded to the top layer 130, the three-layer structure can maintain structural stability and intact. The fourth step is shown in Figure 6D As shown in the figure, the top layer 130 is engraved to the middle layer 1 40 using the β RIE method, and the remaining pattern 131 of the top layer 130 is aligned with the alignment pattern 124 of the back surface 121. Remove the silicon dioxide (that is, the middle layer 14) connected to the fixed vertical comb electrode 丨 26 J 'two-layer structure (that is, MEM The movable member 132 in S actuator 2) is produced and molded. The MEMS actuator 2 shown in Figs. 5A to 5C can also be manufactured using the process flow chart shown in Figs. As shown in Figure G, Lili first etched the silicon dioxide intermediate layer from a bottom surface of the bottom of the silicon substrate (S0I, silicon_n_in_UnQr wafer) 1 6 0 by DRIE. 2, and separate the bottom layer into two electrically isolated parts; and because the bottom layer and the top layer

Page 16 200528387 V. Description of the invention (11) The three-layer structure can keep the structure stable and complete. Then, as shown in the first figure, 'from the front of the SOI wafer 163 to the middle of the dioxide dioxide layer 162, you only need to remove the second layer of stone dioxide, which is connected to the fixing member 164, the three-layer structure. The movable parts are made into shape. θ Refer to FIG. 5D again, which is another embodiment of the bottom layer ho shown in FIG. 5C, wherein the bottom layer 170 is electrically isolated into two pairs of halves, 7 0, 1 7 0 lf ' And reinforced by the thin film deposition material 171, and the reinforcement material must be a non-conductive material such as smashed dioxide. The MEMS actuator consisting of the top layer 90, the middle layer 100, and the bottom layer 170 shown in Figs. 5A, 5B, and 5D can be manufactured and formed through the process steps shown in Figs. 7A to 7? The process steps 7A to 7C are the same as the process steps 6A to 6C ′, and as shown in FIG. 7C, after the back surface 181 of the wafer 180 is carved with # and separated into two parts 182 and 182 ′, as shown in FIG. 7D, A flexible insulating material such as silicon dioxide can be deposited on the back surface 181 and the isolation slot 183 using a thin film process (thinfi 1 m processes); as shown in FIG. 7E, another layer of material 184 (layer of material), such as Crystal silicon (or polycrystalline silicon 'P 0 1 ysi 1 ic ο η) is re-deposited on the back surface i 8 1 and the opening groove 183 to complete the reinforced connection between the two parts 182, 182; and the thin film material on the back surface 181 can be borrowed It is removed by grinding or polishing; as shown in FIG. 7F, the top layer 1 8 5 is then etched down to the middle layer 1 8 6 by the dr IE method, and the etching shape of the top layer 1 8 5 is 1 8 7 and alignment of the alignment pattern 1 8 8 on the back 1 1 1, then just remove the silicon dioxide ( Interlayer), a three-layer structure of the movable member body 189 that is formed article. Refer to FIG. 8 and FIG. 9 again, which are schematic diagrams of the operating state of the MEMS actuator shown in FIG. 5 ′. Among them, as shown in FIG. 8 A, the movable member of the top layer 90

200528387 V. Description of the invention (12) 92 is grounded GND, but the fixed comb electrode 95 on the top layer 90 is connected to the first voltage source AC1 of the AC power source (UC voltage source); and the bottom layer 110 is two sets of isolated fixed comb electrodes 1 12 It is connected to the second voltage source AC2 and the third voltage source AC3 of the alternating current source (AC v0itage source) respectively, and the movable member 92 can utilize the electrostatic force between the horizontal comb electrodes 93 and 95 (electr. Static force). Balance, or electrostatic attraction of the vertical comb electrode 12, and start to swing relative to the torsion hub 94. The unbalanced force in the horizontal comb drive actuator can be manufactured by margin or deliberately Design and construction. As shown in Figs. 8 to 8β, the electrostatic attraction force from the side between the vertical comb-shaped drive electrodes (shown by the arrow in Fig. 8A), the movable member 92 rotates to the maximum inclination angle with the torsion pivot 94 as the rotation axis; As shown in figure m ', after the movable member 92 has reached the maximum tilt angle, ί ί :: ί ΐ ΐ! The electrostatic attraction between the poles (as shown by the arrow in Figure 8B, the movable member 92 returns to the horizontal position; Rotate the movable member 92 to reach another maximum = pole J-side of the electrostatic attraction can be: the movable member 92 can be rotated to reach; the other? Shown in Figure 8ΗΑ 'the electrostatic attraction between the moving electrodes (such as after 8 圄' from the horizontal Comb drive < moving parts to make the moving parts return to the front of the water) will be applied to (cycle) 0 to ^ position 'to complete a swing cycle. Refer to Figure 9 again. The relationship between the phase and the tilt of the mirror surface of the MEMS actuator 2 shown in the figure, and the phase of the voltage source used. Usually, the main resonance is not considered or close to the main resonance. H rate to swing, while the movable member 92 includes d series ground GND, and the first voltage source AC1 Department of Application

Page 18 200528387 V. Description of the invention (13) Horizontal comb electrode 95 in the fixed structure of the top layer 90. The second voltage source AC 2 is applied to a set of fixed comb electrodes 112 (112,) in the bottom layer 110. The third voltage source AC 3 is applied to another group of fixed comb electrodes 1 1 2 (1 1 2 ,,) in the bottom layer. The frequency of the first voltage source AC 1 is usually twice the swing frequency of the movable member Q 2. The frequencies of the second voltage source AC2 and the third voltage source AC3 are usually equal to the swing frequency of the movable member 92, but with different phases; and the waveforms of the first, second, and third voltage sources AC1, AC2, and AC3 may have various shapes. In order to achieve the desired angular velocity of the movable part; usually when the waveform is square 'and the voltage sources AC 1, AC 2, AC 3 are at the given amplitude, the movable part can be driven with the best efficiency to the maximum Corner. Referring to FIG. 10A again, it is a method for forming an electrical connection between the MEMS actuator 2 structure and the bottom layer 110 of the actuator 2. The mems actuator 2 can use a 501 chip (with 14 〇11-〇1 ^ 113111 is formed by 〇1 ^% ^^ 『, with a marginal stone eve wafer; it uses the DRIE method (deep reactive ion etching), such as if, iH, 6D, or 71? As shown in the figure, an additional opening 190 is etched at the top layer 90 to expose the access to the intermediate layer 丨 00, and then the middle of the opening 190 area ^ 100 is electrically removed at the same time in the structure forming process. Insulation materials can be connected (as shown by the left and right arrow lines in Figure 10A); and the electrical connection of the bottom layer 110 can be performed by traditional submerged circuit packaging methods, such as depositing a metal contact board and then proceeding: :: Wi re-bond i ng 〇 Refer to Figures 10B and 10C again, which is shown on the _MEMS actuator 2 structure and its actuator 2 bottom layer 1 1 0 Another method of electrical connection, where 'Actuator 2 is connected to a carrier board by a conductive material layer 200

200528387 V. Description of the invention (14) 201, and the conductive material layer 200 is divided into two pairs of halves, 200, 200 "to avoid electrical bridging, and the conductive material layer 200 can be λ remote Paste, conductive film (fllm), solder paste (solder guide, etc.); and substrate 201 (substrate) 201 is shaped for the fan-out operation of the bottom comb electrode; and the insulating material ( (Or dielectric material) 002 is arranged on the carrier board 201, thereby isolating the metal conductor pads 203 on the carrier board 200 and the fan-out operation can be performed from the top conductor on the carrier board 201 The pad 20 is carried out as shown in FIG. 10B, or is connected to the top conductor pad 203 through the perforation 205 from the bottom conductor pad 204 of the carrier board 201. Refer to FIG. 11 for explanation. The invention can adjust the structural resonance frequency of the movable member by increasing the effective / effective torsional rigidity of the torsional hinge; the torsional hinge 211 is designed to have a set of comb electrodes 212, and an additional comb electrode 2 on the top layer 21 fixed structure 1 and 3 are aligned, and the additional comb electrodes 2 丨 3 are connected to a DC voltage source (DC), and The top layer 21 〇 The voltage source AC1 connected to the other comb electrodes 214 is insulated and isolated; when the movable member is driven by ^ (system ground), the voltage difference between the direct current voltage source (DC) and the ground (gnd) is wide. The comb electrode 212, 213 generates electrostatic attraction, which can produce a braking effect on torsional rotation of the 'Wu 2 & with additional comb electrode 212; SUPPressing) effect; then by adjusting the DC voltage source right # Γ #GND (GND The voltage difference between) can relatively increase the torsional hinge 211 ^ = turn rigidity, so that the resonance frequency of the movable member can be adjusted. Another tone # = Ϊ12, is the division of the structural resonance frequency of the movable member of the present invention ii? It is a part of a torsion hub 2 2 0 2-2 4-4 or 4 points trimming operation 'to adjust the resonance frequency of the moving parts _; page 20 200528387 V. Description of the invention (15) The pivot 2 2 The selective removal of the upper protrusion 221 can be achieved by using techniques such as laser trimming and E-beam lithography, without destroying the integrity of the structure. Small so that the resonance frequency of the moving parts To adjust. Although the present invention has been disclosed as above with a preferred embodiment, it is not intended to limit the present invention. Any person skilled in the art can make various changes and decorations without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be determined by the scope of the appended patent application.

Page 21 200528387 Brief description of the drawings [Simplified description of the drawings] Figures 1A, ΐβ, and κ are the MEMS actuator of the present invention—the top and middle of the embodiment

ID ID 1G 2A Top and bottom view. = 1F: It is the flow chart of the process steps of the first, 1B, and "maps.": It is the flow chart of the other process steps of the drawings 1A and 1M1C. 2D is the other side view of the embodiment shown in Fig. 1, It also indicates that the “moving force relationship between the horizontal and vertical comb electrodes of the top movable part when swinging, while the vertical comb electrode of the bottom layer is only on one side of the button: it is the mirror tilt angle phase of the MEMS actuator shown in Figure 2 Relation diagram with the phase of the used voltage source. • It is a three-dimensional schematic view of the movable part of the present invention supported by a pair of torsion hinges and driven by horizontal and vertical comb electrodes. Figures 5A, 5B, 5C: another embodiment of the present invention Top view of the top layer, the middle layer and the bottom layer 'wherein the vertical comb electrodes on the bottom layer are halved and electrically isolated on different sides of the torsion hub, so that three voltage sources can be used to achieve larger Driving force. Fig. 5 is another embodiment of the bottom layer shown in Fig. 5C, in which two sets of electrically isolated vertical comb electrodes are reinforced and connected by a film deposition step. Figs. 6A to 6D Figures 7A to 7F are shown in Figure 5A. Figures 5A and 5B are flowcharts. The process steps of the embodiment shown in the figure 5 B, 5 D Another process steps of the embodiment shown in page 22, 200528387 The diagram briefly illustrates the 8 A to 8 D diagrams. A side view showing the relationship between the horizontal and vertical comb electrodes when the top movable part is swinging, and the vertical comb electrodes at the bottom are electrically isolated on each side of the torsion hub. Figure 9: Figure 8 The relationship between the phase of the mirror tilt angle of the MEMS actuator and the phase of the used voltage source. Figures 10A, 10B, and 10C: Figure 2 shows the two sets of electrical isolation at the bottom of the moving body shown in Figures 1 and 5. Method for connecting vertical comb electrodes. Figure 11 is a top view of another embodiment of the present invention, in which an additional horizontal comb electrode is added to each of the twisting pivot of the actuator and the fixing member on the top layer, and is applied to the additional The voltage difference on the horizontal comb electrode can increase the effective rigidity of the torsion hub. Figure 12: A schematic diagram of the top of the torsion hub protrusion, which can be removed by laser or other means to reduce the torsion hub. Torsional rigidity. [In the drawing Reference number] 1,2 MEMS (micro-electro-mechanical) actuator 10 Top layer 11 Fixing member 12 Movable member 13 Comb electrode 14 Twist hinge 15 Comb electrode 20 Intermediate layer 30 Bottom layer 31 Cavity 32 Comb electrode 40 Wafer (bottom layer ) 41 Back face 42 Front face 43 Etched shape 44 Alignment pattern 45 Fixture 50 Wafer (top layer) 51 Etched shape

Page 23 200528387 Brief description of the diagram 5 2 Movable parts 60 Silicon dioxide layer (intermediate layer) 70 Wafer 80 Wafer 81 Back surface 82 Intermediate layer 83 Front face 84 Fixing piece 85 Moving piece 90 Top piece 91 Fixing piece 92 Moving piece 93 Comb electrode 94 Twist hub 95 Comb electrode 100 Intermediate layer 110 Bottom layer 111 Cavity 112 Comb electrode U29, 1 1 2 " 120 wafer (bottom layer) 121 back surface 122 front 123 etched pattern 124 alignment pattern 125 cavity 126 comb electrode 130 wafers (top layer) 140 — oxidized hard layer (middle layer) 150 wafers 150, 160, 1 5 0 " partial wafers 161 back 162 middle layer 163 front 164 fixture 170 bottom layer 170, 1 7 0π part 171 deposition Material 180 Wafer 181 Back 182 ， 1 8 2 'Part 183 Opening groove 184 Material 185 Top layer 186 Intermediate layer 187 Etching shape 188 Alignment pattern 189 Movable member 190 Opening 200 Conductive material layer 201 Carrier board 2 00, ， 2 0 0 π Half 202 Insulating material (dielectric material) 203 Conductor pad 204 Conductor pad 205 Perforation 210 Top layer 211 Twist hub 212 Comb phase 213 Comb phase 214 of the movable comb electrodes 215 New Zealand 221 220 Cassia twisted projection

Page 24

Claims (1)

200528387 VI. Scope of patent application 1. A kind of electric barrier with a first half of the movable member in the shaft phase and a movable member with an electric barrier between two semiconductors and two semiconductors can be tilted if they are electromechanically actuated and they can be made like an application. Electromechanical actuating electrodes, ancient women and movable ^ If applying for special micro-electromechanical-semiconducting] The solid layer is as additional as applying for electromechanical actuating poles. 2 3 4 Complex surface conductor layers are separated by multiple opposite edges. The layer is separated from the layer, the layer is between the layers, its sharp range device, its moving parts are mechanical sharp range devices, its fixed comb is a comb sharp range actuator layer, and its fixed parts are comb-shaped electrical, Its coefficient is twisted. Two groups are provided with comb electrodes, and the branched electrical partition is provided with the first rotating gear in the first item which is damaged. The first electrode in item 1 crosses the first or the electrode, and the fixed part is the electrode and the microelectromechanical actuator of the first item in the first item, including: a movable part and a fixed part, and The pivot is supported and can be rotated around a rotation axis, and the comb-shaped electrode; and the fixed member is arranged with the movable electrode, and the comb-shaped electrode of the fixed member is arranged in a fork; One or two semiconductor layers; and a first cavity. The cavity of the micro-semiconductor layer having a plurality of comb-shaped electrodes has a proper depth and a dead point to prevent the movable member from swinging excessively. The system having the two-semiconductor layer is arranged on the movable fork. The movable member described in item 3 is connected to the first connector to the second member having a half-layer of the conductive layer and a plurality of comb-shaped electrodes on the fixed member. One side has a plurality of comb-shaped electrodes that are conductively grounded (GND), while the first voltage source is the second half voltage source. A comb-shaped electrode system with movable comb electrodes and movable 200528387 200528387 13 Scope of application for patents Electromechanical fixed electrical absolute source voltage such as applying electromechanical limit pieces and solid electrodes such as electromechanical application, so if applying for electromechanical application department, the pattern can be aligned with 11 12 14 comb t The second semi-conductive insulation is calibrated in which the movable member is grounded, the first half is connected to the first voltage source, and the second semiconductor layered electrode system is respectively connected to the second voltage source and a pair of electrodes including The quasi-plan etch and fixed-to-first actuators are the comb source of the leading edge. The patented fan actuator, the external fixed fixed piece of electricity, makes its patented fan actuator, adjustable patentable fan actuator, thinning or having a series of steps engraved or its case, which surrounds the eighth half of the piece, and is insulated. It is separated from the first half of the moving part, the first half of the moving part, and the first half of the shaving comb-like item, and the additional solid structure of the fixed item is the torsional pivot shear. It has a conductor layer fixed part and a twisted comb with a fixed part system vibration frequency and a button. The micro-electromechanical complex surface can be adjusted to set a movable member actuator. Another method is provided on the back of the first semiconductor wafer for subsequent steps. For calibration use; the front surface of the body wafer is to a certain depth to form a pole, and the oxide pattern is oxidized on at least one surface of the body wafer, and the oxide layer is formed on the front surface of the body wafer; The comb-shaped electrode system is provided with a plurality of electrode cross-arranged comb-shaped conductances connected to the direct-current comb-shaped electrical part on the pivot of the comb electrode, and the resonance The third electrode of the second set of manufacturing a micro comb-shaped electrically conductive layers and movable / micro-electro group waste source electrode of the comb electrode of square micro-projections of the frequency. Method ’making // the back of the cavity Page 27 200528387 The scope of the patent application is to dissolve the first and second semiconductor wafers mentioned above, and make the oxidation layer of the second semiconductor wafer to the cavity and the fixed comb electrode etched on the first semiconductor wafer; etch the first semiconductor wafer to form The movable part and the fixed part are aligned by the alignment pattern of the back surface of the first 2 conductor wafer, so that the comb electrodes of the movable part = the comb electrodes of the fixed part are arranged alternately, and the comb electrodes of the fixed part are placed in the Above the fixed comb electrode of the first semiconductor wafer, it is electrically insulated and isolated by an oxide layer. A method for manufacturing a micro-electromechanical actuator having a plurality of comb-shaped electrodes includes the following steps: a wafer (SOI, silicon-on-insulator (to form a cavity, a fixed comb-shaped electrode, and a quasi-pattern for calibration in subsequent steps) ; The front of Shi Xi wafer is aligned to form the quasi-pattern of the movable element and the fixed element, so that the comb electrodes of the movable element are arranged in parallel, and the comb electrode of the fixed element is above the electrode, but by s〇I Method for manufacturing a micro-electromechanical actuator with an oxide layer and an electrically insulated comb-shaped electrode, ^ ΐ 'Fabricated on the back of the first semiconductor wafer-^ steps used for calibration; 3 is * to form a cavity and fixed comb phase etching The shape is engraved with a back side alignment pattern on the back by the alignment pattern on the back. The pair of buttons is engraved with the above-mentioned side on the back and the comb-shaped electrical components on the back are stacked on the fixed comb. Isolation of the edge. A type having a plurality of faces includes the following steps: The first semiconductor electrode is etched by etching or other alignment patterns, and the front side is 200528387 VI. The scope of patent application is qualified; oxidize at least one surface of a second semiconductor wafer to form an electrically insulating oxide layer; weld the first and second semiconductor wafers and make the second semiconductor wafer oxide layer Facing the cavity etched on the first semiconductor wafer and fixing the comb-shaped electrode; etching an opening groove on the back of the first semiconductor wafer, so that the first semiconductor wafer is divided into two parts that are electrically insulated; The second semiconductor wafer is etched to form a movable member and a fixed member, and the alignment pattern of the alignment pattern on the back of the first semiconductor wafer is used to cross-align the comb-shaped electrode of the movable member and the comb-shaped electrode of the fixed member, and the comb of the fixed member The electrode electrodes are stacked on top of the fixed comb electrodes of the first semiconductor wafer, but are electrically insulated and isolated by an oxide layer. 17. A method for manufacturing a micro-electro-mechanical actuator with a plurality of comb-shaped electrodes, comprising the following steps: using an etching or other method, making an alignment pattern on the back of the first semiconductor wafer for subsequent steps for calibration; etching The front surface of the first semiconductor wafer forms a cavity and a fixed comb electrode, and the titanium engraved pattern formed on the front is aligned by the alignment pattern on the back surface; Oxidizing at least one surface of a second semiconductor wafer to form an electrically insulating oxide layer; welding the first and second semiconductor wafers, and etching the oxidation layer of the second semiconductor wafer to the first semiconductor wafer Formed cavity and fixed comb Page 29, 200528387 6. For the patent application electrode, an opening groove is etched on the back of the first semiconductor wafer, so that the first semiconductor wafer is separated into two parts of electrical insulation; a protective layer such as silicon nitride is deposited, On the back surface of the first semiconductor wafer; depositing or generating a barrier layer such as silicon dioxide on an open trench separating the first semiconductor wafer into two parts; depositing a thin film material such as polycrystalline spar (ρ ο 1 ysi 1 ic ο η), on the back of the first semiconductor wafer and the opening groove, so that the first semiconductor wafer is connected by the separated two parts, but is still electrically insulated by the barrier layer of the previous step; removed in the first Polycrystalline silicon, barrier layer and protective layer on the back of the semiconductor wafer; etch the second semiconductor wafer to form the movable part and the fixed part, and make the comb-shaped electrode of the movable part by the alignment pattern alignment on the back of the first semiconductor wafer Crossed with the comb-shaped electrode of the fixing member, and the comb-shaped electrode of the fixing member is superposed on the fixed comb-shaped electrode of the first semiconductor wafer, but is electrically charged by the oxide layer Sexual insulation. 18. A micro-electro-mechanical actuator having a plurality of comb-shaped electrodes, comprising: a substrate having two electrically isolated conductive bodies on one side, and the two conductive systems are partially exposed to be separately provided A voltage source is externally connected; a microelectromechanical actuator having a plurality of comb-shaped electrodes, the bottom layer of which is composed of two parts of electrical insulation; and Page 30, 200528387 VI. Application scope: An adhesive layer, which is made of conductive material and is divided into two parts of electrical insulation; by this, the carrier board and the actuator are connected together by the adhesive layer, and The two electrically isolated conductive bodies on the carrier board are electrically connected to the two electrically insulated portions of the bottom layer of the actuator, respectively. 19. The micro-electromechanical actuator with a plurality of comb-shaped electrodes as described in item 18 of the scope of the patent application, wherein the carrier board can further be provided with a via hole to make the carrier board have two electrical properties on one side. The isolated conductive body can be electrically connected to the other side of the carrier board through the perforation for externally connecting the voltage source. Page 31