TW200527710A - Light emitting diode and method for manufacturing the same - Google Patents

Abstract

A light-emitting diode (LED) and a method for manufacturing the same are disclosed. A LED epitaxial structure is grown on a silicon (Si) substrate, and a highly reflective p-type contact layer is formed on the LED epitaxial structure. Then, the Si substrate with the LED epitaxial structure are flipped on a n-type gallium arsenide (GaAs) substrate. Subsequently, the Si substrate is removed, and n-type electrodes are formed on the n-type GaAs substrate and the GaN layer of the LED structure respectively.

Description

200527710 发明. Description of the invention [Technical field to which the invention belongs] The present invention relates to a kind of light Emitting Diode (LED) and a method for manufacturing the ancient and soil a VS δ 乂 w, and particularly there is The invention relates to a high-brightness light-emitting diode and a manufacturing method thereof. [Previous technology] The light-emitting diode system uses car 1 ”+ conductor material to make a component, which is a kind of fine solid-state light source that can convert electrical energy into flowers ~ + as the moon. Because the light-emitting diode is not only small in size, but also has long life, low driving voltage, fast response rate, financial shock and other characteristics, i can meet the requirements of light, thin and miniaturized for various applications. Therefore, it has become a very popular electronic product in life. … In recent years, much attention has been focused on light-emitting elements formed of nitride-based semiconductors, such as gallium (GaN), nitride (αιν), aluminum gallium (AlGaN), and indium gallium nitride ( InGaN), and aluminum indium gallium ⑽nGaN). This type of light-emitting element semiconductor is mostly grown on a sapphire substrate, which is different from other light-emitting elements that use a conductive substrate. Since the sapphire substrate is an insulator, it is not possible to directly make electrodes on the substrate. Therefore, the electrodes must be directly contacted with the p-type semiconductor layer and the N-type semiconductor layer separately to complete the production of such light-emitting elements. Please refer to Fig. 1. Fig. 1 is a sectional view showing a conventional light emitting diode structure. This traditional light emitting diode includes at least a substrate 100 sequentially stacked, a buffer layer 102, an n-type semiconductor layer 104, an active 200527710 layer (active layer 106), and a p-type semiconductor layer 1 〇8, and a transparent transparent electrode layer 110 (Transparent Contact Layer; TCL) ', a p-type electrode 112 on the half of the transparent electrode layer 110, and an n-type electrode 114 on the exposed n-type semiconductor layer 104. In this conventional light-emitting diode, the material of the substrate 100 is sapphire, and the material of the buffer layer 102 can be nitrided nitride, nitrided nitride (A1N), nitrided nitride, indium gallium nitride, and aluminum indium gallium nitride. Etc., the p-type semiconductor layer 108 may be a GaN.based material doped with beryllium (Be), gill (Sr), barium (Ba), silicon (Zη), or magnesium (Mg) element. . Since blue fite is used as the substrate 100 ′, the P-type electric S 112 and the n-type electrode 114 are respectively located on the same-side transparent electrode layer 11 and the n-type semiconductor layer 104 of the light-emitting diode structure, so that the P-type What are the electrode type electrodes? The semiconductor layer 108 and the n-type semiconductor layer 104 are in electrical contact. However, before making the n-type electrode 114, a portion of the p-type semiconductor layer 108 and the active layer ι06 must be removed by lithography and etching to expose a portion of the n-type semiconductor I1G4. As a result, the n-type electrode 114 is formed on the exposed n-type semiconductor layer 104. Therefore, this form of light-emitting monopole is more complicated to manufacture; at the same time, because of the n-type electrode 114, a part of the p-type semiconductor layer 108 and the active part of a p-knife are removed using # 影 和 饭 刻 饭 ^ 1〇 It can be produced only after 6 years, so the light emitting area of this type of lx photopole body will be smaller, and it will also affect the luminous efficiency. In addition, because the P-type electrode 112 and the η-type electrode 114 are on the same side, and because of the use of a 疋 insulating substrate, the forced electrode configuration is an asymmetric structure. During operation, it will cause current 壅 200527710 Current Crowding Effect. This situation not only reduces the luminous efficiency of the component, but also affects the reliability of the component. At the same time, because of this (the insulation substrate and the electrode configuration are asymmetric), It also makes this type of component's poor Electrostatic Discharge (ESD). ’Secondly, due to the material-type doped nitride of the P-type semiconductor layer 108 and the doping concentration of the P-type nitride semiconductor material cannot be the same as that of the η-type material ^, the ρ-type electrode ㈣good ohmic contact ⑽ *

Contact) is not easy to produce, that is, the p-type electrode U2 is not easy to form a good ohmic contact with the p-type semiconductor layer 08. Therefore, an additional transparent electrode layer 11G needs to be formed on the p-type semiconductor layer to reduce the contact resistance by means of a surface electrode. Although the transparent electrode g 110 is a transparent structure, the addition of a transparent electrode layer will still affect the brightness of the light-emitting diode (because it is a transparent electrode layer, the transparent electrode layer is still {stacked by a thin metal layer & its light The transmittance is not 100%). In addition, the transparent electrode layer 11 is not very thin, and it is not easy to control the uniformity, and it is easy to be damaged in the subsequent manufacturing process. The content of the L] is 4L. The purpose of the present invention is to provide a light-emitting diode with a p-type contact layer made of metal rhenium, which can not only (E1 x,-the shell of the pole, but also has a very good static electricity. Elimination, cable ectrostatlc Discharge; esd) characteristics. Another object of the present invention is to provide a kind of light-emitting diode. The 1 i contact layer is a metal layer with high reflectivity. Therefore, the transparent contact layer can be omitted. 200527710 At the same time, thicker metal layers can be easily manufactured. In addition, its resistance is lower than that of the transparent contact layer. In this way, not only can the operating power of the light-emitting diode be reduced, it has excellent applicability, it can also simplify the manufacturing process and reduce production costs. Another object of the present invention is to provide a light-emitting diode, the active layer of which is close to the substrate. When the component is operated, especially in high-temperature environments and high-power applications, such a structure is susceptible to flow. 1. Shortening the "relative to traditional components" The αχ juice of the active layer of the present invention close to the substrate can make the components dissipate heat quickly and effectively. In addition to effectively improving the light emitting efficiency of the light emitting diode, the reliability and stability of the device can also be improved. Another object of the present invention is to provide a light-emitting diode manufacturing method: the silicon substrate is a conductive substrate, in addition to making the component 'completely compatible with traditional light-emitting diodes during the packaging process (package Only the nail-line is needed. Its electrodes are also vertically symmetrical. In addition to the uniform current distribution, the static dissipation characteristics of its components are also improved. At the same time, such components will not be made because of the need to make electrodes. On the same side, the area of the light-emitting area is reduced. According to the above purpose of the present invention, a light-emitting diode is proposed, which at least includes: an n-type semiconductor substrate; and a p-type contact layer on the n-type semiconductor substrate. Wherein, this type of P ^ contact layer is a reflectivity metal θ '-an active layer is located on the? -Type contact layer described above; and-n-type body contact layer is located on the aforementioned active layer. According to the above object of the present invention, it is proposed _ Kinds of light-emitting diodes, at least one contact layer composite structure includes at least the first surface opposite to the first one, wherein: the surface-connected T-junction structure includes at least-high reflectance contacts s A surface; a substrate bonded to the second layer of the contact layer composite structure 200527710 :: 'a luminescent epitaxial structure bonded to the above-mentioned contact layer composite structure: the first: a: upper' a first electrode is bonded to the above-mentioned luminescent worm crystal Structurally; and the first electrode is bonded to the above-mentioned substrate. According to a preferred embodiment of the present invention, the above-mentioned contact layer composite structure is further changed to include a metal contact layer and a substrate. In addition, according to the present invention, In another preferred embodiment, the above-mentioned contact layer composite structure further includes at least a type contact layer and an n-type semiconductor layer, wherein the n-type contact layer is located between the n-type semiconductor layer and the high reflectance contact layer, and the “type semiconductor layer” Bonded to a substrate. According to the purpose of the present invention, a method for manufacturing a light emitting diode is provided, which includes at least the following steps: first, a light emitting insect structure is formed on a silicon substrate; and then, a -P-type contact layer is formed on the above. On the light-emitting epitaxial structure, wherein the p-type contact layer is a high-reflectivity conductive layer; then, a-n-type semiconductor substrate is provided; and the light-emitting insect on the dream substrate is inverted It is structured on the n-type semiconductor substrate so that the p-type contact layer is bonded to the n-type semiconductor substrate. Next, the above silicon substrate is removed. After the silicon substrate is removed, two contact electrodes are formed on the n-type semiconductor layer and η, respectively. On a semiconductor substrate according to a preferred embodiment of the present invention, the material of the primary (Growth) substrate is an η-type stone ρ-type contact layer, which can be nickel, platinum, chromium, gold, titanium, silver, aluminum, germanium ( Ge), tungsten (W), tungsten silicide (siw), button (Ta), gold zinc alloy (AuZn), gold beryllium alloy (AuBe), gold germanium alloy (AuGe), or gold germanium nickel alloy (AuGeN〇) Reflective metals and transparent conductive materials, such as: indium tin oxide layer (ιτο), indium zinc oxide layer (IZ0), zinc oxide layer (Zn〇), nickel oxide layer (NiO), or cadmium tin oxide layer (CT0) the combined layer structure. 200527710 According to the purpose of the present invention, a method for manufacturing a light-emitting diode is described, which includes the following steps: First, a light-emitting epitaxial structure is not formed on the first soil plate, and then a south reflection is formed.拉拉 总 恩 μ. „.. The Fengfeng contact layer is on the above-mentioned light-emitting epitaxial structure. In turn, a second substrate is provided, Nongluo-/, the first substrate is a conductor; down: up: brother- The substrate is on the second substrate so that the high-reflectivity contact layer is bonded to the substrate. Next, the above-mentioned first substrate is removed; and then, the X-ray cat, the mouth structure, and the second electrode are bonded. The two substrates are bonded. According to a preferred embodiment of the present invention, the above-mentioned [the substrate further includes at least a metal contact layer and a high reflectance contact layer bonded. In addition, according to Zhao Benfa :, another-preferred embodiment ' The above second substrate further includes at least an n-type semiconductor layer and an n-type contact layer, wherein the n-type contact layer is bonded to the high-reflectivity contact layer. The n-type gallium nitride on the second substrate and the light-emitting epitaxial structure. = Faces between layers can be optimized and obtained Fractured and high-quality η-type GaN layer. In addition, the two contact electrodes are located on the upper and lower sides of the light emitting diode structure, which is easier to fabricate. The conductive material with high reflectivity as the contact layer can not only reduce the grain size Size, enhance the applicability of light-emitting diodes, and can be more extensive. The brightness of the hair-light-polarity and has a very good static dissipation characteristics. At the same time, due to the use of thermal conductivity than traditional sapphire substrates (such as: dream substrate, bang Substrate), making this component's == significantly better than traditional components made with sapphire substrates. Furthermore, because the light-emitting diode structure is specifically inverted on another substrate, this process can be effective The active layer is close to the substrate. When the component is in operation, the heat generated can quickly and effectively pass through the thermal conductivity 200527710 and the soil plate. This makes the component made by the present invention not only have the same stability, but also Under severe high temperature or high power applications, the performance and reliability can be greatly improved compared to the first and second components. ^ The present invention discloses a light emitting diode and The manufacturing method uses a conductive material with a reflectivity as the contact layer. Therefore, the size of the light emitting diode can be reduced and the brightness of the light emitting diode can be improved, and the electrostatic dissipative property is more excellent. In order to make the invention The description is more detailed and complete, you can refer to the following description and cooperate with the diagrams in Figure 2 to Figure 5. Please refer to Figures 2 to 5, Figures 2 to 5 are shown in green according to the first of the present invention. A cross-sectional view of a manufacturing process of a light-emitting diode in a preferred embodiment. In the production of the light-emitting diode of the present invention, a substrate 200 is first provided, and a preferred embodiment of the substrate 200 is an n-type silicon substrate. ^ The epitaxial structure of the light-emitting diode is grown on 2000, and the active layer 206 is grown on the substrate 2⑻n-type semiconductor @ 2〇4, the n-type semiconductor layer 2 () 4, and the active layer A p-type semiconductor layer 207 is grown on 206 to form a structure as shown in FIG. 2. Among them, the material of the n-type semiconductor layer can be n-type gallium nitride, and the active layer 206 can be a single-quantum well (81 called ^ Quantum Well; SQW), multiple quantum wells (MuUipie such as coffee leg Wen MQ MQ) or PN structure (PN Junctlon). When nitride is grown on a substrate 200 made of n-type stone, the thermal expansion coefficient between the nitride and the substrate is very different, so the appropriate material is used to grow the nitride layer under appropriate stupid crystal conditions to obtain A fragmented and high-quality gallium nitride layer is very important. 11 200527710 After the formation of the luminous stupid crystal structure, a car-thick P-type contact layer 208 is formed on the p-type semiconductor layer 20? By, for example, steaming, to form a structure as shown in FIG. Among them, the material of the p-type contact layer 208 is preferably a conductive material with high reflectivity, such as metal. In a preferred embodiment of the present invention, the material of the p-type contact layer 208 may be selected from nickel, palladium, platinum, chromium, gold, titanium, silver, Shao, germanium (Ge), thorium (W), and tungsten tungsten ( Siw), button

(Ta), gold-zinc alloy (AuZn), gold-beryllium alloy (AuBe), gold-germanium alloy (AuGe) or gold-germanium-nickel alloy (AuGeNi) and other highly reflective metals and transparent conductive materials, such as: rhenium tin oxide Layer (IT0), indium oxide layer (ιζ〇), zinc oxide layer (ZnO), nickel oxide layer (Ni0), cadmium tin oxide (ct〇) combined layer structure. In addition, the material of the p-type contact layer 208 is preferably a conductive material having high reflectance and low resistance. With the highly reflective P-type contact layer 208, the light emitted from the active layer 206 can be effectively reflected. In this way, the light emitting brightness of the light emitting diode can be greatly increased. Since the P-type contact layer 208 is made of a highly reflective conductive material such as metal and has good conductivity, there is no need to form an additional transparent contact layer on the p-type contact layer 208, which cannot achieve 100% light transmittance.

The trouble of making contact layer (TCL) is not easy. After the formation of the translucent P-type contact layer 208, the substrate 21G is provided first, and then the substrate 2000 is provided with the n-type semiconductor layer 204, the active layer 206, the p-type semiconductor layer 207, and "contact". The layer 208 is overlaid on the substrate 21o, and the p-type contact layer is uniformly bonded to the substrate 21o to form a structure as shown in FIG. 4. Among them, the material of the substrate 210 may preferably be n-type gallium sulphide, gallium sulphide, gallium nitride, gallium nitride, gallium nitride, carbites, gap, zinc oxide (Zn〇), Shi Xi / Carbide Shi Xi, Wu Za / Carbide Shi Xi, Shi Xi / Carbide 12 200527710 rr-Half tin oxide / Carbon cut indium tin oxide, simple cut / Carbonization, stone / emulsified zinc, deified gallium / oxygen cut / Carbon cutting, sec / oxygen dagger, gallium in the gas / oxygen cutting / oxidation, Shixi / polycrystalline stone / Carbonium crystal / Zinc oxide, or silicon carbide on the insulation layer.

The substrate is removed by, for example, a 4-selective chemical rhenium or mechanical lapping method. After the substrate ㈣, the present invention can further perform processing on the exposed η-type semiconductor layer 2G4, such as reducing the thickness of the η-type semiconductor layer 204 by leaving aside, and exposing the exposed surface of the η-type semiconductor layer ⑽. Rough chaining or patterning of n-type semiconductor layers. Then, 'e.g., using a general semiconductor process', the blade is separated by steaming or deposition. The n-type semiconductor layer 204 and a part of the substrate are fabricated with the ohmic electrodes 212 and 214 to form a stacked light-emitting body structure as shown in FIG. 5. Among them, the electrodes 212 and 214 are both η-type, which is not only easy to manufacture, but also has better stability and reliability than most P-type electrodes. 4

Dao Mingling, Figures 6 to 10, Figures 6 to i 〇 are drawings showing the process cross section of a light emitting diode according to the second preferred embodiment of the present invention. The n-type semiconductor layer 302, the active layer 304, and the p-type semiconductor layer 306 are sequentially formed on the substrate 300 by using, for example, stupid crystal growth. The 11-type semiconductor layer 302, the active layer 304, and the p-type semiconductor layer 3 06 The hair-gloss μ crystal structure is formed. In this embodiment, the material of the substrate 300 may be a conductive material, such as silicon, gallium arsenide, silicon / silicon carbide (SiC), silicon / silicon germanium (SiGe) / ^ Al · τα, t human sand, silicon / silicon carbide / selenium germanium (SeGe), silicon / indium tin oxide), human fossil, stone / indium tin oxide, zinc oxide (ZnO), or gallium nitride, etc. Non-material materials, such as sapphire / oxide, silicon / silicon oxide / carbonized 13 200527710 silicon, gallium arsenide / silicon oxide / carbonized broken, second / oxidized broken / zinc oxide, kunhua marrying / stone oxide / oxidized , Shi Xi / polycrystalline Shi Xi / carbide Shi Xi, Shi Xi / polycrystalline broken / oxidized, or silicon carbide (SiCOI) on the insulating layer, etc. In addition, the material of the n-type semiconductor layer 30 may be Composite layer formed of gallium nitride (GaN), aluminum nitride (A1N), aluminum gallium nitride (AlGaN), gallium gallium nitride (in (jaN), and aluminum indium gallium nitride (A1InGaN); active layer 304 Can be a single quantum formed by a composite combination of gallium nitride (GaN), nitride nitride (A1N), aluminum gallium nitride (A1GaN), gallium gallium nitride (InGaN), and aluminum indium gallium nitride (AlInGaN) (Smgle Quantum Well; SQW), Multiple Quantum Well (MQW), or PN structure (PN JunctiOn); and the p-type semiconductor layer 306 may be made of gallium nitride (GaN), aluminum nitride (A1N ), Aluminum gallium nitride (AlGaN), indium gallium nitride (InGaN), and aluminum indium gallium nitride (AUnGaN) p-type composite layer. Next, a high reflectivity contact layer is formed by evaporation or deposition 308 is bonded on the p-type semiconductor layer 306 to form a structure as shown in FIG. 6. Among them, the material of the high-reflectivity contact layer 308 is preferably a conductive material with high reflectivity, such as metal, Or a composite layer formed of a metal and a transparent conductive material. In a preferred embodiment of the present invention, the The material can be selected from nickel, palladium, platinum, chromium, gold, titanium, silver, none, germanium (Ge), thorium (w), Siw (Siw), Syria (Ta), gold zinc alloy (AuZn), gold Beryllium alloy (AuB hook, gold germanium alloy, or AuGeNi) and other highly reflective metals and transparent conductive materials, such as: indium tin oxide layer (IT〇), indium zinc oxide layer (ιζ〇) , A composite layer structure composed of a zinc oxide layer (ZnO), a nickel oxide layer (N10), and a cadmium tin oxide (CT0). The high reflectivity contact layer 308 is a composite conductive material composed of a metal and a conductive oxide having high reflectivity and low resistance. 14 200527710. With the high-reflectivity contact layer 308, the light emitted by the active layer 304 can be effectively reflected out of the element, so as to enhance the external quantum of the element (Ex-Qua-Effieieney). Increase the light / polarity of the light-polar body. After the high-reflectivity contact layer is formed, individual crystal grains may be separated by, for example, cutting or engraving to form a structure as shown in FIG. 7. Among them, after cutting or engraving, the shape of the structure removed between two adjacent crystal grains may be an inverted triangle as shown in FIG. 7, or may be U-shaped or bowl-shaped. After the die cutting is completed, a substrate 310 is first provided, where the substrate 310 has been formed-a highly reflective metal contact layer 312. In this preferred embodiment, the material of the soil plate 310 may be, for example, a conductive material, such as η-type Shishenhualu, ^, Wu, ratified inscriptions, nitride nitride ρ γ silicon nitride, gallium phosphide ( GaP), zinc oxide (ZnO), silicon / silicon carbide, silicon A ^ silicon germanium / silicon carbide, silicon / silicon carbide / selenium, sec / indium tin oxide / carbide, sec / oxide, sapphire / Zinc oxide, gallium ^ tin / carbide f1 豕 / emulsified silicon / silicon carbide, silicon / silicon oxide / emulsification, gallium arsenide / oxide crushed / oxygenated, fresh silicon, silicon / polycrystalline silicon / silicon carbide, Silicon / Xixi Shixixi / Zinc Oxide, or the insulating upper plate 300 with the reverse on it. Then the original substrate, the heart-light cat day-to-day structure, and the high-reflectivity contact layer 3008 are on the soil plate 3 1 0, so that the high-reflectivity contact is located on the substrate 3H). The eighth sheep contact layer 308 joins the dry t ^ 、 and the Mons contact layer 3 12 in a sentence, forming a structure not shown in FIG. 8. Among them, after receiving people _ 射 八 Μ # _ @. Later, the retroreflective contact layer 308 and the high-reflection contact layer 312 constitute a contact composite structure. Jinsheng: 1 The substrate is removed by, for example, 4-selective chemical engraving or mechanical polishing, and the „type semiconductor layer 3 is exposed, as shown in FIG. 9 200527710. Then, the deposition and steaming shovel are used. In the method, an electrode 316 and an electrode 3 1 4 ′ are formed on a part of the u-type semiconductor layer 302 and the substrate 31, and the stacked light-emitting diode structure shown in FIG. 8 is formed. Figures 11 to 15 and Figures ii to i 5 are green cross-sectional views of a process of a light-emitting diode according to the second preferred embodiment of the present invention. In this embodiment, it is the same as that of the present invention. The second embodiment is the same. A light emitting epitaxial structure composed of the substrate 400 is sequentially formed, and a high-reflectivity contact layer is formed on the p-type semiconductor layer 406, as shown in FIG. In the second embodiment, after the high reflectance contact layer 408% is formed, individual crystal grains may be separated by, for example, cutting or etching to form a structure as shown in FIG. 12. Then, a substrate 410 is provided. The substrate 41 has an n-type semiconductor layer 412 and an n-type contact layer 414 which are sequentially stacked. The n-type semiconductor layer 412 is bonded to the substrate 410. In this preferred embodiment, the material of the substrate 10 is preferably a conductive material, such as Shi Xi, Germanium, Gallium Tritide, Silicon Carbide, Gallium Phosphide, and Zinc Oxide. , Gallium nitride, silicon / silicon carbide, silicon / silicon germanium / silicon carbide, stone evening / carbide stone / lithium germanium, stone evening / indium tin oxide / carbide stone, or stone evening / indium oxide_tin, etc. In addition, the material of the n-type semiconductor layer 4 丨 2 is preferably n-type gallium nitride. Next, the original substrate 400 together with the light-emitting epitaxial structure and the surface reflectance contact layer 408 are overlaid on the substrate 410. The high-reflectivity contact layer 408 is uniformly bonded to the n-type contact layer 414 on the substrate 410, thereby forming a structure as shown in FIG. 13. After bonding, the high-reflectivity contact layer 408 and the n-type contact layer are formed. 414 and the ^ -type semiconductor layer 412 constitute a contact composite structure. 16 200527710 Next, as in the second embodiment—Private, # λ 贝 也 1 夕 ”, the original substrate 400 is removed, and a structure as shown in FIG. 14 is formed. And then forming n-type electrodes 418 and n-type electrodes on part of the semiconductor layer 402 and the substrate 410, respectively. 416 'is formed as a stacked structure of a light emitting diode of FIG. 15. In the present invention, a light emitting diode employed Τ basket name ,,, ° configuration of the second electrode may be fabricated directly

It is easy to make light-emitting diodes with the upper system electrodes located on the same-side at the upper and lower sides of the light-emitting diode structure. There is also no problem of reducing the light-emitting area and affecting the light-emitting efficiency because two electrodes need to be made on the same side. In addition, 'because the electrodes are symmetrically arranged up and down, when the device is energized, it will not cause the current S plug effect (Current CrGwding), which is similar to that of the traditional nitrided depletion crystal on the sapphire substrate; this situation is not only It can effectively improve the luminous efficiency and reliability of the element, and at the same time, because of the use of the conductive substrate, the components of the present invention are used, and their electrostatic dissipation characteristics (ESD) are also relatively improved.

In particular, while more and more light-emitting diodes are being used for lighting and high-power applications, the design and manufacturing process of the present invention are specifically directed to consideration of heat dissipation, and the active layer (the largest source of heat) of the light-emitting element is used to reverse The manufacturing process makes it closer to the substrate. This design can greatly reduce the stroke of heat flow and greatly increase the efficiency of heat dissipation. Therefore, in addition to the increased stability, the device made by the present invention is also very suitable for the production of high-power light-emitting devices. It is worth noting that the light emitting diode system of the present invention is a standard process, which is not only applicable to the gallium nitride light emitting diode of the above embodiment, but also suitable for the production of a filled gallium (AlinGaP) light emitting diode. . Although the present invention has been disclosed as above with a preferred embodiment, it is not intended to limit the present invention by 17 200527710. Any skilled artisan can deviate from the spirit of the present invention = within the scope, and can make various changes and decorations. Therefore, the scope of protection of the present invention shall be determined by the scope of the appended patent application. Description of the L-style room sheet] = 1 is a cross-sectional view showing a conventional light-emitting diode structure. Figures 2 to 5 are drawings-a kind of luminescence according to the present invention-a preferred embodiment 剖面 I is a cross-sectional view of the process of a particular polar body.

= 6 ^ 第 Η) The drawing shows a cross-sectional view of the manufacturing process of a light emitting diode according to the second comparison of the present invention. Figures 11 to 15 are cross-sectional views of the manufacturing process of a light-emitting diode. "-Preferred implementation [simple description of element representative symbols] 100: substrate 1 0 2 · buffer layer 104: n-type semiconductor layer 106: active layer _ 108: p-type semiconductor layer 110: transparent electrode layer 112: p-type electrode 114: n-type electrode 200: substrate 204: n-type semiconductor layer 206: active layer 18 200527710 207: 208: 210: 212: 214: 300: 302: 304: 306 ... 308: 310: 312: 314: 316: 400: 402 : 404 406 408 408 410 412 414 416 418 P-type semiconductor layer P-type contact layer substrate ohmic electrode ohmic electrode substrate n-type semiconductor layer active layer P-type semiconductor layer high reflectance contact layer substrate highly reflective metal contact layer electrode electrode substrate n-type semiconductor Layer active layer P-type semiconductor layer High reflectance contact layer • Substrate: n-type semiconductor layer: n-type contact layer • Electrode: electrode

19

Claims (1)

200527710 Scope of patent application • A light emitting diode (LED) at least includes: an n-type semiconductor substrate; a p-type contact layer on the n-type semiconductor substrate, wherein the p-type contact layer is a highly reflective conductive A layer; and a light-emitting stupid structure on the p-type contact layer. 2_ The light-emitting diode according to item 丨 in the scope of the patent application, wherein the material of the 忒 n-type semiconductor substrate is n-type gallium arsenide (GaAs). 2. The light-emitting diode according to item 1 in the scope of the patent application, wherein the material of the n-type semiconductor substrate is selected from the group consisting of n-type gallium arsenide, silicon, germanium, and nitride. Aluminum gallium, gallium nitride, silicon carbide, gap, zinc oxide (Zη〇), Xi: Fossil Xi, Shi Xi / Shi Xi Ge / Carbide Shi Xi, Shi Xi / Carbide Shi Xi / Shi Xi Ge , Shi Xi / Steel Oxide Tin Anodized Silicon, Silicon / Small Tin Oxide, Silicon / Silica Oxide / Silicon Carbide, Sapphire / Zinc Oxide, Gallium Oxide / Small Oxide / Carbon Smash, Chop / Oxidation / Zinc Oxide, Arsenic A group consisting of gallium oxide / stone oxide / zinc oxide, stone evening / polycrystalline stone evening / carbide stone evening, stone evening / multiday stone evening / oxidation, and silicon carbide on the insulating layer. According to the light-emitting diode described by the member of the scope of the patent application, the material f of the β-P contact layer may be selected from the group consisting of -metal, -transparent conductive material = combination, and the material of the metal is Selected from Yulu ::; ⑽, turn ⑼, chromium (Cr), gold (Au), titanium (τι), silver (Ag),. (A1), germanium (Ge), Yan (W), seconds Siw, Ta, Ta, 20 200527710 AuZn, AuBe, AuGe, and AuGeNi, and this group The transparent conductive material is selected from the group consisting of an indium tin oxide layer (ITO), an indium zinc oxide layer (IZ0), an oxide layer (ZnO), a nickel oxide layer (NiO), and a cadmium tin oxide layer (CT〇). A group of people. 5. The light-emitting diode according to item 1 of the scope of patent application, wherein the light-emitting stupid structure includes at least one P-type semiconductor layer, an active layer, and an n-type semiconductor layer sequentially stacked, and the active layer is located at On the p-type semiconductor layer. Lu 6. The light-emitting diode according to item 5 of the scope of patent application, wherein the n-type semiconductor layer is made of ^ -type gallium nitride. 7. The light-emitting diode described in item 1 of the scope of patent application, further comprising at least two n-type electrodes located on the light-emitting epitaxial structure and the ^ -type semiconductor substrate, respectively. 8 · A semiconductor structure suitable for manufacturing light emitting diodes, including at least: an n-type semiconductor substrate; a p-type contact layer on the n-type semiconductor substrate, wherein the p-type contact layer is a highly reflective conductive layer A light emitting stupid structure is located on the p-type contact layer; and a stone evening (Si) substrate is located on the light emitting epitaxial structure. 21 200527710 Only declared the scope of the patent 帛 8 is applicable for making light-emitting one: ΓΓ bulk structure, where the material of the ㈣ semiconductor substrate = broken gallium diarsenide, silicon, germanium, gallium nitride, gallium nitride , Silicon Carbide,: Chemical ·), Oxidation (ζη0), Shi Xi / Carbide Shi Xi, Shi Xi ... Expected anorexia, simplified tin / carbon cutting, W indium tin oxide, Shi Xi, siliconized: ¼ chemical Silicon, sapphire / zinc oxide, gallium arsenide / silicon oxide / oxycarbide cut / zinc oxide, gallium / oxon cut / oxidation, Shi Xi / polycrystalline polycrystalline mirror end 10. The semiconductor structure suitable for making a light-emitting diode is described, in which the material of the p-type contact layer may be selected from the t group consisting of -metal, -transtech electrical material, and combinations thereof, and the material of the metal is selected from Based on nickel (Nl), palladium (Pd), platinum (pt), chromium (cr), gold (U), titanium (Tl), silver (Ag), aluminum (A1), germanium (Ge), tungsten (W) , Tungsten silicide (SlW), button (Ta), gold zinc alloy (AuZn), gold beryllium alloy (AuBe), gold germanium alloy (AuGe), and gold germanium nickel alloy (AuGeNi), and the group is transparent The electrical material is selected from the group consisting of an indium tin oxide layer (ITO), a zinc oxide layer (IZO), a zinc oxide layer (Zn〇), a nickel oxide layer (Ni〇), and a cadmium tin oxide layer (CT0). ). u. A method for manufacturing a light emitting diode, at least comprising: forming a light emitting epitaxial structure on a silicon substrate; forming a p-type contact layer on the light emitting epitaxial structure, wherein the p 22 200527710 type contact layer is a A high-reflectivity conductive layer; providing an n-type semiconductor substrate; flipping the silicon substrate on the n-type semiconductor substrate so that the p-type contact layer is bonded to the n-type semiconductor substrate; and removing the second substrate. 1 2 · The method for manufacturing a light-emitting diode according to item 11 of the scope of patent application, wherein the silicon substrate is of an n-type. 1 3 · The method for manufacturing a light-emitting diode according to item 11 in the scope of the patent application, wherein the material of the p-type contact layer may be selected from a group consisting of a metal, a transparent conductive material, and a combination thereof. The material of the metal is selected from the group consisting of nickel (Ni), palladium (Pd), platinum (Pt), chromium (Cr), gold (Au), titanium (Ti), silver (Ag), aluminum (A1), and germanium (Ge), tungsten (W), tungsten silicide (SiW), button (Ta), gold zinc alloy (AuZn), gold beryllium alloy (AuBe), gold germanium alloy (AuGe), and gold germanium nickel alloy (AuGeNi) A group, and the transparent conductive material is selected from the group consisting of an indium tin oxide layer (ITO), an indium zinc oxide layer (ιζο), a zinc oxide layer (ZnO), a nickel oxide layer (NiO), and a cadmium tin oxide Stratum (CTO). 14. The method for manufacturing a light-emitting diode as described in item η of the scope of the patent application, wherein the 5H-emission stupid crystal structure includes at least a p-type semiconductor layer, an active layer, and an n-type semiconductor layer sequentially stacked, And the p-type contact layer is located on the p-type semiconductor layer. 23 200527710 15. The manufacturing method of the light-emitting diode according to item 4 of the scope of the patent application, wherein the material of the n-type semiconductor layer is n-type gallium nitride. 16. The method of manufacturing a light-emitting diode as described in item (1) of the scope of the patent application, after the step of removing the silicon substrate, it further includes at least forming a magic-type electrode located in the light-emitting epitaxial structure and the n-type semiconductor, respectively. Substrate 17 — A light-emitting diode, at least comprising: a contact layer composite structure, wherein the contact layer composite structure has an opposite first surface and a second surface, and the contact layer composite structure includes at least a high reflection The rate contact layer is located on the first surface; a substrate is bonded to the second surface of the contact layer composite structure; a light-emitting stupid structure is bonded to the first surface of the contact layer composite structure; a first electrode is bonded On the light-emitting epitaxial structure; and a second electrode is bonded on the substrate. 18 · The light-emitting diode as described in item 17 of the patent scope of Shenyan, wherein the 4-contact layer composite structure further includes at least one metal contact layer bonded to the substrate. 19 · The light-emitting diode as described in item 17 of the patent scope of Shenying, wherein the rhenium contact layer composite structure further includes at least an n-type contact layer and a ^ -type semiconductor layer, and the n-type contact layer is located at the η Between the semiconductor layer and the high reflection 24 200527710 rate contact layer, and the n-type semiconductor layer is bonded to the substrate. 20. The light-emitting diode according to item 19 of the scope of patent application, wherein the material of the n-type semiconductor layer is ^ -type gallium nitride. 2 1 · The light-emitting diode according to item 17 of the scope of patent application, wherein the material of the high-reflectivity contact layer may be selected from a group consisting of a metal, a transparent conductive material, and a combination thereof, the The material of the metal is selected from the group consisting of nickel (Ni), | bar (Pd), platinum (pt), chromium (Cr), gold (Au), titanium (Ti), silver (Ag), inscription (A1), germanium (Ge), tungsten (W), tungsten carbide (SiW), button (Ta), gold zinc alloy (AuZn), gold beryllium alloy (AuBe), gold alloy (AuGe), and gold germanium nickel alloy (AuGeNi) The transparent conductive material is selected from the group consisting of a tin oxide layer (IT0), an indium zinc oxide layer (IZ0), a zinc oxide layer (Zn0), a nickel oxide layer (NiO), and A group of cadmium tin oxide layers (CT0). 22. The material of the substrate in the light-emitting diode described in item 17 of the scope of patent application is a conductor. 23. The light-emitting diode according to item 17 in the scope of the patent application, wherein the material of the rubidium substrate is selected from n-type gallium arsenide, silicon, germanium, aluminum gallium nitride, gallium nitride, silicon carbide, Gallium phosphide (GaP), zinc oxide, silicon = cut, germanium / carbon-cut carbide germanium, ... oxidized tin inverse fossil, stone eve / indium tin oxide, stone eve / stone oxidized / carbide carbide, sapphire / Zinc Oxide, Kunhua Gallium / Stone Oxide / Fossil Breaking, Shixue / Stone Oxide / Oxidation, Kunhualu / 25 200527710 Stone Oxide / Zinc Oxide, Shixue / Polycrystalline Stone / Carbide Stone , Shi Xi / polycrystalline Shi Xi / Zinc oxide, and a group of silicon carbide on the insulating layer. 24. The light-emitting diode according to item 17 in the scope of patent application, wherein the light-emitting epitaxial structure includes at least one p-type semiconductor layer, an active layer, and an n-type semiconductor layer sequentially stacked, and the p A semiconductor layer is bonded to the high-reflectivity contact layer. 25. The light-emitting diode according to item 24 of the scope of the patent application, wherein the p-type semiconductor layer is a composite layer, and the composite layer is selected from the group consisting of gallium nitride (GaN) and aluminum nitride (aiN) , Aluminium gallium nitride (AiGaN), Indium gallium nitride (InGaN), and aluminum indium gallium nitride (AiinGaN). 26. The light-emitting diode according to item 24 in the scope of patent application, wherein the active layer is selected from the group consisting of a single quantum well (SQW), a multiple quantum well (Multiple quantum well; MQW), and a PN structure (PN Junction), and the material of the active layer is selected from the group consisting of gallium nitride (GaN), aluminum nitride (A1N), aluminum gallium nitride (AlGaN), and indium gallium nitride (inGaN). , And a group of aluminum indium gallium nitride (AlInGaN). 27. The light-emitting diode according to item 24 of the scope of patent application, wherein the n-type semiconductor layer is a composite layer, and the material of the composite layer is selected from the group consisting of gallium nitride (GaN), aluminum nitride ( A1N), aluminum gallium nitride (AlGaN), indium gallium nitride (InGaN), and aluminum indium gallium nitride (AlInGaN), a family of 26 200527710 group 0 28 · as described in the scope of patent application No. 17 A polar body, wherein the first electrode and the second electrode are n-type. 29. A method for manufacturing a light emitting diode, at least comprising: forming a light emitting epitaxial structure on a first substrate; forming a high reflectance contact layer on the light emitting epitaxial structure; providing a second substrate; Covering the first substrate on the second substrate so that the high-reflectivity contact layer is bonded to the second substrate; removing the first substrate to expose the light-emitting epitaxial structure; and forming a first electrode and The light emitting epitaxial structure is bonded and a second electrode is bonded to the second substrate. 30. The manufacturing method of the light-emitting diode according to item 29 of the applied patent, wherein the second substrate further includes at least a metal contact layer bonded to the high-reflectivity contact layer. Person 3 1 · The method for striking a light-emitting diode as described in item 29 of the scope of patent application, wherein the second substrate further includes at least one -1 pear semiconductor layer and one! !! Type contact layer, and the 11 type contact layer is bonded to the high-emissivity contact layer. q 32. The manufacturing method of the light emitting diode as described in item 31 of the scope of patent application 27 200527710, wherein the material of the n-type semiconductor layer is n-type gallium nitride. 3 3 · The manufacturing method of the light-emitting diode according to item 29 of the scope of the patent application, wherein the material of the south-reflectivity contact layer may be selected from a group consisting of a metal, a transparent conductive material, and a combination thereof The material of the metal is selected from the group consisting of nickel (Ni), palladium (Pd), platinum (Pt), chromium (Cr), gold (Au), titanium (Ti), silver (Ag), aluminum (A1), Germanium (Ge), tungsten (W), tungsten silicide (Siw), button (Ta), gold zinc alloy (AuZn), gold beryllium alloy (AuBe), gold germanium alloy (AuGe), and gold germanium nickel alloy (AuGeNi) And a transparent conductive material selected from the group consisting of an indium tin oxide layer (IT0), an indium zinc oxide layer (ιζο), a zinc oxide layer (Zη〇), a nickel oxide layer (Ni〇), and A group of cadmium tin oxide (CTO) layers. 1 34. The method of manufacturing a light emitting diode as described in item 29 of the scope of patent application, wherein the material of the second substrate is a conductor. 35. "Please refer to the light-emitting diode described in item 29 of the patent scope; method 'where the material of the second substrate is selected from the η type of Kun's'" Yong Shixi, Cu, gallium nitride, gadolinium b铉, ψ Zinc Oxide (... Xi / Carbonated Hair, Diselenium Germanium, Silicon / Indium Tin Oxide Stone / Silicon Inverted Silicon / Siliconized Silicon, M Gas Lax / Emulsified Indium Tin, Silicon / Silicon Oxide / Carbon ... Oxidation ;, God ::: Chemical: Gallium / Oxidation dream / Carbonization dream, Oxidation group. Zinc upper cut cut into a group-family 28 200527710 36. Manufacturing of light-emitting diodes as described in item 29 of the scope of patent application Method, wherein the light emitting epitaxial structure includes at least one p-type gallium nitride layer, an active layer, and an n-type gallium nitride layer sequentially stacked, and the p-type gallium nitride layer and the high-reflectivity contact layer 37. The method of manufacturing a light-emitting diode as described in item 36 of the scope of the patent application, wherein the active layer is selected from a single quantum well (Single Quantum Well; SQW) and a multiple quantum well (MultiPle Quantum Well; MQW) and PN Junction, and the material of the active layer is selected from A group of gallium nitride (GaN), aluminum nitride (A1N), aluminum gallium nitride (AlGaN), indium gallium nitride (InGaN), and aluminum indium gallium nitride (AlInGaN). 38_If you apply for a patent The method for manufacturing a light-emitting diode according to item 29 of the scope, wherein the first electrode and the second electrode are n-type.