TW200527706A - Structure of light emitting diode - Google Patents
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- TW200527706A TW200527706A TW93102479A TW93102479A TW200527706A TW 200527706 A TW200527706 A TW 200527706A TW 93102479 A TW93102479 A TW 93102479A TW 93102479 A TW93102479 A TW 93102479A TW 200527706 A TW200527706 A TW 200527706A
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- 239000000758 substrate Substances 0.000 claims abstract description 12
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- 239000004065 semiconductor Substances 0.000 claims description 38
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- NPXOKRUENSOPAO-UHFFFAOYSA-N Raney nickel Chemical compound [Al].[Ni] NPXOKRUENSOPAO-UHFFFAOYSA-N 0.000 claims description 31
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- 229910052719 titanium Inorganic materials 0.000 claims description 30
- 229910052763 palladium Inorganic materials 0.000 claims description 28
- 239000011241 protective layer Substances 0.000 claims description 22
- 229910010421 TiNx Inorganic materials 0.000 claims description 19
- 229910052718 tin Inorganic materials 0.000 claims description 13
- 229910052759 nickel Inorganic materials 0.000 claims description 12
- 229910052726 zirconium Inorganic materials 0.000 claims description 12
- 229910052779 Neodymium Inorganic materials 0.000 claims description 11
- -1 Na5Al3F14 Inorganic materials 0.000 claims description 10
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 9
- 239000012792 core layer Substances 0.000 claims description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 8
- 229910052697 platinum Inorganic materials 0.000 claims description 8
- NJXPYZHXZZCTNI-UHFFFAOYSA-N 3-aminobenzonitrile Chemical compound NC1=CC=CC(C#N)=C1 NJXPYZHXZZCTNI-UHFFFAOYSA-N 0.000 claims description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 5
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(III) oxide Inorganic materials O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 101100500407 Caenorhabditis elegans dyf-2 gene Proteins 0.000 claims description 4
- 229910020187 CeF3 Inorganic materials 0.000 claims description 4
- 229910005693 GdF3 Inorganic materials 0.000 claims description 4
- 229910004650 HoF3 Inorganic materials 0.000 claims description 4
- 229910002319 LaF3 Inorganic materials 0.000 claims description 4
- 229910017557 NdF3 Inorganic materials 0.000 claims description 4
- 229910004366 ThF4 Inorganic materials 0.000 claims description 4
- 101000929049 Xenopus tropicalis Derriere protein Proteins 0.000 claims description 4
- 229910009520 YbF3 Inorganic materials 0.000 claims description 4
- 229910001632 barium fluoride Inorganic materials 0.000 claims description 4
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 claims description 4
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 4
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims description 4
- 229910001634 calcium fluoride Inorganic materials 0.000 claims description 4
- 229910052681 coesite Inorganic materials 0.000 claims description 4
- 229910052593 corundum Inorganic materials 0.000 claims description 4
- 229910052906 cristobalite Inorganic materials 0.000 claims description 4
- 229910001610 cryolite Inorganic materials 0.000 claims description 4
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 4
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052682 stishovite Inorganic materials 0.000 claims description 4
- 229910001637 strontium fluoride Inorganic materials 0.000 claims description 4
- FVRNDBHWWSPNOM-UHFFFAOYSA-L strontium fluoride Chemical compound [F-].[F-].[Sr+2] FVRNDBHWWSPNOM-UHFFFAOYSA-L 0.000 claims description 4
- 229910052905 tridymite Inorganic materials 0.000 claims description 4
- FDIFPFNHNADKFC-UHFFFAOYSA-K trifluoroholmium Chemical compound F[Ho](F)F FDIFPFNHNADKFC-UHFFFAOYSA-K 0.000 claims description 4
- BYMUNNMMXKDFEZ-UHFFFAOYSA-K trifluorolanthanum Chemical compound F[La](F)F BYMUNNMMXKDFEZ-UHFFFAOYSA-K 0.000 claims description 4
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 4
- 101000864098 Homo sapiens Small muscular protein Proteins 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- FPHIOHCCQGUGKU-UHFFFAOYSA-L difluorolead Chemical compound F[Pb]F FPHIOHCCQGUGKU-UHFFFAOYSA-L 0.000 claims description 3
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 claims description 3
- HWSZZLVAJGOAAY-UHFFFAOYSA-L lead(II) chloride Chemical compound Cl[Pb]Cl HWSZZLVAJGOAAY-UHFFFAOYSA-L 0.000 claims description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims 2
- QAHFOPIILNICLA-UHFFFAOYSA-N Diphenamid Chemical compound C=1C=CC=CC=1C(C(=O)N(C)C)C1=CC=CC=C1 QAHFOPIILNICLA-UHFFFAOYSA-N 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- 238000005286 illumination Methods 0.000 abstract 1
- 239000010936 titanium Substances 0.000 description 44
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 241001391944 Commicarpus scandens Species 0.000 description 1
- 241000219112 Cucumis Species 0.000 description 1
- 235000015510 Cucumis melo subsp melo Nutrition 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- BEQNOZDXPONEMR-UHFFFAOYSA-N cadmium;oxotin Chemical compound [Cd].[Sn]=O BEQNOZDXPONEMR-UHFFFAOYSA-N 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 210000004508 polar body Anatomy 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
Abstract
Description
200527706 玖、發明說明： 發明所屬之技篮領域 本發明是有關於一種由瓜-V族兀素(瓜· v group element)構成 的發光二極體(light emitting diode，簡稱LED)，且特別是有關於一種 覆蓋一透明保護層的發光二極體。 先前技術 近幾年來，由於發光二極體的發光效率不斷提升， 使得發光二極體在某些領域已漸漸取代日光燈與白熱燈 泡’例如需要高速反應的掃描器燈源、液晶顯示器的背光 源或前光源汽車的儀表板照明、交通號誌燈，以及一般的 照明裝置等。發光二極體與傳統燈泡比較具有絕對的優 勢，例如體積小、壽命長、低電壓/電流驅動、不易破裂、 發光時無顯著之熱問題、不含水銀（沒有污染問題）、發 光效率佳（省電）等特性。 由III-V族元素所構成的發光二極體爲―種寬能隙(bandgap)的材 質，其發光波長從紫外光一直涵蓋到紅光，因此可說是幾乎涵蓋所有 可見光的波段，其中氮化鎵(GaN)發光二極體元件深受注目。如第i 圖與第2圖所示，其繪示爲習知的一種發光二極體之剖面示意圖。 請參照第1圖，此類型的發光二極體係形成在一基材100上， 其材質爲氧化銘(Al2〇3)。基材100上依序爲晶核層(nucleation layer)112 與N型摻雜導電之緩衝層(n-type conductive buffer layer) 114、緩衝層114 之上爲第一束縛層(confinement layer)l 16、於第一束縛層(confinement layei〇116上有一作爲發光用的發光層118，且於其上形成第二束縛層 11704twf.doc 5 200527706 120。 其中，第一束縛層116以及第二束縛層120的摻雜型是相反的， 第一束縛層116爲N型摻雜的氮化鎵(n-GaN)，而第二束縛層120爲 P型摻雜的氮化鎵(p-GaN)。之後，於第二束縛層120之上形成接觸層 122，其爲P型摻雜的氮化鎵。接著，於接觸層的部分區域上形成第 二電極124，形成第二電極124之材質通常爲N型摻雜的氧化銦錫 (Indium tin oxide)、氧化錫鎘(Cadmium tin oxide)或極薄之金屬，並做 爲發光二極體的陽極。此外，在緩衝層114的部分區域上與第一束縛 層116隔離的區域上形成第一電極126，作爲發光二極體的陰極。 請參照第2圖，此發光二極體元件係包括一半導體層210、 一透明導電層228、一第一電極226、一第二電極224。其中半導體層 210至少包括一第一型摻雜半導體層220、一第二型摻雜半導體層 232，以及一發光層222。 其中，發光層222係位於第一型摻雜半導體層220上、第二型 摻雜半導體層232位於發光層222上、透明導電層228位在第二型摻 雜半導體層232上、第一電極226電性連接於第一型摻雜半導體層220 上以及第二電極224位在透明導電層228之部分區域上。 至於發光二極體的材質，第一電極226之材質係鈦/鋁合金等， 第二電極224包括N型透明導電氧化層以及P型透明導電氧化層。其 中，N型透明導電氧化層之材質爲IT0以及P型透明導電氧化層之材 11704twf.doc 6 200527706 質爲CuA102等。 習知發光二極體之結構，其所產生的亮度有限，且 在長期使用之下，容易遭受到濕氣的破壞，其於發光二極體之 表面產生氧化物，減低發光二極體的使用壽命。 發明內容 有鑑於此，本發明之目的就是提供一種發光二極體 的結構，於習知發光二極體之結構的電極上覆蓋一層透明 保護層，以增加發光二極體之亮度。 本發明之再一目的就是提供一種發光二極體的結 構，於習知發光二極體之結構的電極上覆蓋一層透明保護 層，以隔絕濕氣保護發光二極體，以提升發光二極體之壽命。 爲達上述目的，本發明提出一種發光二極體的結構， 此結構係包括一基材、一晶核層、一緩衝層、一第一束縛層、一發 光層、一第二束縛層、一接觸層、一透明導電層、一第一電極、一第 二電極、一透明保護層。其中晶核層、緩衝層、第一束縛層、發光層、 第二束縛層與接觸層例如爲一系列磊晶過程所形成之半導體層。 而上述發光二極體結構中各部件的配置係晶核層位於基 材上、緩衝層位在晶核層上、第一束縛層位在緩衝層之部分區域上， 其中第一束縛層之摻雜型與緩衝層之摻雜型相同、發光層位在第一束 縛層上、第二束縛層位在發光層上，其中第二束縛層之摻雜型與第一 11704twf.doc 7 200527706 束縛層之摻雜型不同、接觸層位在第二束縛層上、透明導電層位在接 觸層上、第一電極位在第一束縛層分佈區域以外之緩衝層上、第二電 極位在透明導電層之部分區域上、透明保護層配置於透明導電層以及 第二電極的部分區域上。 爲達上述目的，本發明另提出一種發光二極體的結 構，此結構係包括一半導體層、一透明導電層、一第一電極、一 第二電極以及一透明保護層。其中半導體層至少包括一第一型摻雜半 導體層、一第二型摻雜半導體層，以及一發光層。 而上述發光二極體結構中各部件的配置係發光層位於第 一型摻雜半導體層上、第二型摻雜半導體層位於該發光層上、透明導 電層位在第二型摻雜半導體層上、第一電極電性連接於第一型摻雜半 導體層上、第二電極位在透明導電層之部分區域上、透明保護層配置 於透明導電層以及第二電極的部分區域上。 本發明因爲在製作發光二極體之結構中加入透明保護層，此透 明保護層例如以折射率>1.2之光學薄膜材料所製成，除了可增加元件 亮度之外，並可隔絕濕氣保護元件，以提升元件壽命。 爲讓本發明之上述目的、特徵和優點能更明顯易懂， 下文特舉一較佳實施例，並配合所附圖式，作詳細說明如 下。 實施方式 本發明之主要槪念係在製作發光二極體之結構中加入透明 11704twf.doc 8 200527706 保護層，此透明保護層的作用除了可增加元件亮度之外，並可隔絕濕 氣保護元件，以提升元件壽命。依此槪念所形成的二極體結構至少有 兩種型態。以下將配合第3圖以及第4圖做更進一步的說明。 第3圖繪示爲依照本發明一較佳實施例發光二極體 之剖面示意圖。請參照第3圖，本實施例之發光二極體元 件主要係由一基材300、一晶核層312、一緩衝層314、一第一束 縛層316、一發光層318、一第二束縛層320、一接觸層322、一透明 導電層328、一第一電極326、一第二電極324以及一透明保護層330 所構成，其中晶核層312、緩衝層314、第一束縛層316、發光層318、 第二束縛層320與接觸層322可統稱爲一半導體層，其例如係藉由磊 晶製程進行製作。 而上述發光二極體結構中各部件之配置係晶核層312位於基材 300上、緩衝層314位在晶核層312上、第一束縛層316位在緩衝層 314之部分區域上，其中第一束縛層316之摻雜型與緩衝層314之摻 雜型相同、發光層318位在第一束縛層316上、第二束縛層320位在 發光層318上，其中第二束縛層320之摻雜型與第一束縛層316之摻 雜型不同、接觸層322位在第二束縛層320上、透明導電層328位在 接觸層322上、第一電極324位在第一束縛層316分佈區域以外之緩 衝層314上、第二電極324位在透明導電層328的部分區域上以及透 明保護層336位於透明導電層328以及第二電極324的部分區域上。 承上述，發光二極體結構中各部件之材質分別說明如下：基 材300之材質例如係氧化鋁、碳化矽(SiC)、氧化辞(ZnO)、矽(Si)、 磷化鎵(GaP)，以及砷化鎵(GaAs琪中之一。晶核層312之材質例如是 11704twf.doc 9 200527706200527706 (1) Description of the invention: Field of the invention to which the invention belongs The present invention relates to a light emitting diode (light emitting diode (LED)) composed of melons-V group elements (melons) Related to a light emitting diode covered with a transparent protective layer. In recent years, due to the continuous improvement of the luminous efficiency of light-emitting diodes, light-emitting diodes have gradually replaced fluorescent lamps and incandescent light bulbs in certain fields, such as scanner lamps that require high-speed response, backlight sources of liquid crystal displays, or Front-light vehicle dashboard lighting, traffic lights, and general lighting. Compared with traditional light bulbs, light-emitting diodes have absolute advantages, such as small size, long life, low voltage / current drive, not easy to break, no significant thermal problems when emitting light, no mercury (no pollution problems), and good luminous efficiency ( Power saving) and other characteristics. The light-emitting diode composed of III-V elements is a kind of material with a wide bandgap. Its light emission wavelength covers ultraviolet light to red light, so it can be said that it covers almost all visible light bands, of which nitrogen Gallium nitride (GaN) light-emitting diode devices have attracted much attention. As shown in Fig. I and Fig. 2, it is a schematic cross-sectional view of a conventional light emitting diode. Please refer to FIG. 1. This type of light-emitting diode system is formed on a substrate 100, and its material is an oxide (Al203). On the substrate 100, a nucleation layer 112 and an n-type conductive buffer layer 114 are sequentially formed. The buffer layer 114 is a first confinement layer 116. 1. On the first restraint layer (confinement layer 116), there is a light emitting layer 118 for emitting light, and a second restraint layer 11704twf.doc 5 200527706 120 is formed thereon. Among them, the first restraint layer 116 and the second restraint layer 120 The doping type is the opposite, the first tie layer 116 is N-type doped gallium nitride (n-GaN), and the second tie layer 120 is P-type doped gallium nitride (p-GaN). A contact layer 122 is formed on the second constraining layer 120, which is P-type doped gallium nitride. Next, a second electrode 124 is formed on a part of the contact layer, and the material of the second electrode 124 is usually N. Type doped indium tin oxide, cadmium tin oxide, or extremely thin metal, and used as the anode of the light emitting diode. In addition, a part of the buffer layer 114 and the first A first electrode 126 is formed on the area separated by the tie layer 116 to serve as the cathode of the light emitting diode. 2, the light emitting diode element system includes a semiconductor layer 210, a transparent conductive layer 228, a first electrode 226, and a second electrode 224. The semiconductor layer 210 includes at least a first type doped semiconductor layer 220 A second type doped semiconductor layer 232, and a light emitting layer 222. The light emitting layer 222 is located on the first type doped semiconductor layer 220, the second type doped semiconductor layer 232 is located on the light emitting layer 222, and is transparent and conductive. The layer 228 is located on the second-type doped semiconductor layer 232, the first electrode 226 is electrically connected to the first-type doped semiconductor layer 220, and the second electrode 224 is located on a part of the transparent conductive layer 228. The material of the polar body, the material of the first electrode 226 is titanium / aluminum alloy, etc., and the second electrode 224 includes an N-type transparent conductive oxide layer and a P-type transparent conductive oxide layer. The material of the N-type transparent conductive oxide layer is IT0 and The material of the P-type transparent conductive oxide layer is 11704twf.doc 6 200527706. The quality is CuA102, etc. The structure of the known light-emitting diode has limited brightness, and it is easy to be damaged by moisture under long-term use. to An oxide is generated on the surface of the photodiode, which reduces the service life of the light-emitting diode. SUMMARY OF THE INVENTION In view of this, an object of the present invention is to provide a structure of a light-emitting diode on an electrode of a conventional structure of the light-emitting diode. Cover a transparent protective layer to increase the brightness of the light-emitting diode. Another object of the present invention is to provide a structure of a light emitting diode, and a transparent protective layer is covered on the electrode of the conventional structure of the light emitting diode to protect the light emitting diode from moisture, thereby improving the light emitting diode. Of life. To achieve the above object, the present invention provides a structure of a light emitting diode. The structure includes a substrate, a nucleus layer, a buffer layer, a first binding layer, a light emitting layer, a second binding layer, a The contact layer, a transparent conductive layer, a first electrode, a second electrode, and a transparent protective layer. The crystal core layer, the buffer layer, the first binding layer, the light emitting layer, the second binding layer, and the contact layer are, for example, semiconductor layers formed by a series of epitaxial processes. The configuration of each component in the above light-emitting diode structure is that the crystal core layer is located on the substrate, the buffer layer is on the crystal core layer, and the first restraint layer is on a part of the buffer layer. The heterotype is the same as the doping type of the buffer layer, the light emitting layer is on the first binding layer, and the second binding layer is on the light emitting layer. The doping type of the second binding layer is the same as the first 11704twf.doc 7 200527706 binding layer. The doping type is different, the contact layer is on the second tie layer, the transparent conductive layer is on the contact layer, the first electrode is on the buffer layer outside the first tie layer distribution area, and the second electrode is on the transparent conductive layer. On a part of the area, the transparent protective layer is disposed on the part of the transparent conductive layer and the second electrode. To achieve the above object, the present invention further provides a light emitting diode structure. The structure includes a semiconductor layer, a transparent conductive layer, a first electrode, a second electrode, and a transparent protective layer. The semiconductor layer includes at least a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a light-emitting layer. The arrangement of each component in the light-emitting diode structure is that the light-emitting layer is located on the first-type doped semiconductor layer, the second-type doped semiconductor layer is on the light-emitting layer, and the transparent conductive layer is located on the second-type doped semiconductor layer. The upper and first electrodes are electrically connected to the first type doped semiconductor layer, the second electrode is located on a partial region of the transparent conductive layer, and the transparent protective layer is disposed on the transparent conductive layer and a partial region of the second electrode. In the present invention, a transparent protective layer is added to the structure of the light-emitting diode. The transparent protective layer is made of, for example, an optical film material with a refractive index > 1.2. In addition to increasing the element brightness, it can also protect from moisture. Components to increase component life. In order to make the above-mentioned objects, features, and advantages of the present invention more comprehensible, a preferred embodiment is given below and described in detail with the accompanying drawings. The main idea of the present invention is to add a transparent 11704twf.doc 8 200527706 protective layer to the structure of the light-emitting diode. The role of this transparent protective layer is to increase the brightness of the device and to protect the device from moisture. To improve component life. There are at least two types of diode structures formed by this thinking. The following description will be made with reference to FIGS. 3 and 4. FIG. 3 is a schematic cross-sectional view of a light emitting diode according to a preferred embodiment of the present invention. Referring to FIG. 3, the light-emitting diode element of this embodiment is mainly composed of a substrate 300, a crystal core layer 312, a buffer layer 314, a first restraint layer 316, a light-emitting layer 318, and a second restraint. Layer 320, a contact layer 322, a transparent conductive layer 328, a first electrode 326, a second electrode 324, and a transparent protective layer 330, wherein the crystal core layer 312, the buffer layer 314, the first tie layer 316, The light-emitting layer 318, the second tie layer 320, and the contact layer 322 may be collectively referred to as a semiconductor layer, and are manufactured by, for example, an epitaxial process. The configuration of each component in the above light-emitting diode structure is that the core layer 312 is located on the substrate 300, the buffer layer 314 is located on the core layer 312, and the first restraint layer 316 is located on a part of the buffer layer 314. The doping type of the first binding layer 316 is the same as the doping type of the buffer layer 314. The light emitting layer 318 is located on the first binding layer 316 and the second binding layer 320 is located on the light emitting layer 318. The doping type is different from the doping type of the first tie layer 316. The contact layer 322 is located on the second tie layer 320, the transparent conductive layer 328 is located on the contact layer 322, and the first electrode 324 is located on the first tie layer 316. On the buffer layer 314 outside the region, the second electrode 324 is located on a part of the transparent conductive layer 328 and the transparent protective layer 336 is located on a part of the transparent conductive layer 328 and the second electrode 324. Following the above, the material of each component in the light-emitting diode structure is described as follows: The material of the substrate 300 is, for example, alumina, silicon carbide (SiC), oxide (ZnO), silicon (Si), and gallium phosphide (GaP). And gallium arsenide (GaAs). The material of the crystal core layer 312 is, for example, 11704twf.doc 9 200527706
AlJnfGawN/、fkO ; 0分+K1，其爲N型摻雜。緩衝層314之材質例 如爲AyndGa^dN/、肐0 ; 0<c+d<l，其爲N型摻雜。第一束縛層316 之材質例如係 AlJnyGa^yHx、y^O ; 〇Sx+y<l ; x〉c。 此外，發光層318例如是摻雜型態之AlJnbGa^bN/AynyGa^N 量子井結構，且 a、b2〇 ; 0<a+b<l ; X、y>0 ; 〇Sx+y<l ; x〉c〉a，其爲 N型摻雜或是P型摻雜。且發光層318例如爲未摻雜之 bN/AlJiiyGa^yN 量子井結構，而 a、b20 ; 〇Sa+b<l ; X、y20 ; (Kx+y<l ; x>c>a。第二束縛層320之材質例如係AlJnyGa—ΝΛ、泠0 ; (Kx+y<l ; x>c。接觸層322例如爲一超晶格應變層，該超晶格應變層包括 調變摻雜之AUr^Ga^N/AynyGa^yN量子井結構，且u、00 ; 0<u+v幺1 ; X、於0;0幺x+y<l ; x〉u，此超晶格應變層爲N型摻雜或是P 型摻雜。 另外，第一電極326之材質例如是Ti/Al、Ti/Al/Ti/Au、 Ti/Al/Pt/Au > Ti/Al/Ni/Au ^ Ti/Al/Pd/Au > Ti/Al/Cr/Au > Ti/Al/Co/Au > Cr/Au、Cr/Pt/Au、Cr/Pd/Au、Cr/Ti/Au、Cr/TiWx/Au、Cr/Al/Cr/Au、AlJnfGawN /, fkO; 0 points + K1, which is N-type doped. The material of the buffer layer 314 is, for example, AyndGa ^ dN /, 0; 0 < c + d < l, which is N-type doped. The material of the first tie layer 316 is, for example, AlJnyGa ^ yHx, y ^ O; 0Sx + y <l; x> c. In addition, the light-emitting layer 318 is, for example, an AlJnbGa ^ bN / AynyGa ^ N quantum well structure in a doped state, and a, b2; 0 < a + b <l; X, y >0; 〇Sx + y <l; x> c> a, which is N-type doping or P-type doping. And the light emitting layer 318 is, for example, an undoped bN / AlJiiyGa ^ yN quantum well structure, and a, b20; 〇Sa + b <l; X, y20; (Kx + y <l; x > c > a. Second) The material of the tie layer 320 is, for example, AlJnyGa-NΛ, 00; (Kx + y <l; x > c. The contact layer 322 is, for example, a superlattice strained layer, and the superlattice strained layer includes a modulation-doped AUr ^ Ga ^ N / AynyGa ^ yN quantum well structure, and u, 00; 0 < u + v 幺 1; X, at 0; 0 幺 x + y <l; x> u, this superlattice strain layer is N Doped or P-doped. In addition, the material of the first electrode 326 is, for example, Ti / Al, Ti / Al / Ti / Au, Ti / Al / Pt / Au > Ti / Al / Ni / Au ^ Ti / Al / Pd / Au > Ti / Al / Cr / Au > Ti / Al / Co / Au > Cr / Au, Cr / Pt / Au, Cr / Pd / Au, Cr / Ti / Au, Cr / TiWx / Au, Cr / Al / Cr / Au,
Cr/Al/Pt/Au ^ Cr/Al/Pd/Au ^ Cr/Al/Ti/Au > Cr/Al/Co/Au ^ Cr/Al/Ni/Au 'Cr / Al / Pt / Au ^ Cr / Al / Pd / Au ^ Cr / Al / Ti / Au > Cr / Al / Co / Au ^ Cr / Al / Ni / Au ''
Pd/Al/Ti/Au、Pd/Al/Pt/Au、Pd/Al/Ni/Au、Pd/Al/Pd/Au、Pd/Al/Cr/Au、Pd / Al / Ti / Au, Pd / Al / Pt / Au, Pd / Al / Ni / Au, Pd / Al / Pd / Au, Pd / Al / Cr / Au,
Pd/Al/Co/Au > Nd/Al/Pt/Au ' Nd/Al/Ti/Au ' Nd/Al/Ni/Au ' Nd/Al/Cr/Au > Nd/Al/Co/A、Hf/Al/Ti/Au、Hf/Al/Pt/Au、Hf/Al/Ni/Au、Hf/Al/Pd/Au、Pd / Al / Co / Au > Nd / Al / Pt / Au 'Nd / Al / Ti / Au' Nd / Al / Ni / Au 'Nd / Al / Cr / Au > Nd / Al / Co / A, Hf / Al / Ti / Au, Hf / Al / Pt / Au, Hf / Al / Ni / Au, Hf / Al / Pd / Au,
Hf/Al/Cr/Au、Hf/Al/Co/Au、Zr/Al/Ti/Au、Zr/Al/Pt/Au、Zr/Al/Ni/Au、 Zr/Al/Pd/Au > Zr/Al/Cr/Au > Zr/Al/Co/Au > TiNx/Ti/Au ' TiNx/Pt/Au ' TiNx/Ni/Au - TiNx/Pd/Au > TiNx/Cr/Au ' TiNx/Co/Au ^ TiWNx/Ti/Au > TiWNx/Pt/Au、TiWNx/Ni/Au、TiWNx/Pd/Au、TiWNx/Cr/Au、 TiWNx/Co/Au、NiAl/Pt/Au、NiAl/Cr/Au、NiAl/Ni/Au、NiAl/Ti/Au、 Ti/NiAl/Pt/Au、Ti/NiAl/Ti/Au、Ti/NiAl/Ni/Au 或是 Ti/NiAl/Cr/Au 〇 11704twf.doc 10 200527706 並且，第二電極324之材質例如係Ni/Au、Ni/Pt、Ni/Pd、Ni/Co、 Pd/Au、Pt/Au、Ti/Au、Cr/Au、Sn/Au、Ta/Au、TiN、TiWNx 或是 WSix。 此外，第二電極224之材質例如爲一N型透明導電氧化層或是一 P型 透明導電氧化層，其中此N型透明導電氧化層例如係ΠΌ、CTO、 ZnO:A卜 ZnGa204、Sn02:Sb、Ga203:Sn、AgIn02:Sn 或是 Ιη203:Ζη， 此外，此P型透明導電氧化層例如是CuA102、LaCuOS、NiO、QiGa02 或是 SrCu202。 而且，透明保護層330之材質例如係A1F3、AIN、Al2〇3、BaF2、 BeO、Bi203、BiF3、CaF2、CdSe、CdS、CeF3、Ce02、Csl、 DyF2、GdF3、Gd203、Hf02、HoF3、Ho203、LaF3、La203、 LiF、MgF2、MgO、NaF、Na3AlF6、Na5Al3F14、Nb205、NdF3、 Nd203、PbCl2、PbF2、PbO、Pr6〇u、Sb203、Sc203、Si3N4、 SiO、Si203、Si02、SrF2、A1203、Substancel、Substance2、 SubstanceMl、SubstanceH4、Ta205、Ti02、TiN、T1C1、ThF4、 Th02、V205、W03、YF3、Y203、YbF3、Yb203、ZnS、ZnSe、 Zr02 o 第4圖繪示爲依照本發明另一較佳實施例發光二極 體之剖面示意圖。請參照第4圖，本實施例之發光二極體 元件包括一半導體層410、一透明導電層428、一第一電極426、一 第二電極424以及一透明保護層430。其中半導體層410至少包括一 第一型摻雜半導體層420、一第二型摻雜半導體層432以及一發光層 422 〇 發光層422係位於第一型摻雜半導體層420上、第二型摻雜半 導體層432位於發光層422上、透明導電層428位在第二型摻雜半導 體層432上、第一電極426電性連接於第一型摻雜半導體層420上、 11704twf.doc 11 200527706 第二電極424位在透明導電層428之部分區域上以及透明保護層430 位於第二電極424上。 上述發光二極體結構中各部件之材質分別爲：第一電極426之 材質例如係 Ti/A卜 Ti/Al/Ti/Au、Ti/Al/Pt/Au、Ή/Al/Ni/Au、Ti/Al/Pd/Au、 Ti/Al/Cr/Au、Ti/Al/Co/Au、Cr/Au、Cr/Pt/Au、Cr/Pd/Au、Cr/Ti/Au、 Cr/TiWx/Au、Cr/Al/Cr/Au、Cr/Al/Pt/Au、Cr/Al/Pd/Au、Cr/Al/Ti/Au、Hf / Al / Cr / Au, Hf / Al / Co / Au, Zr / Al / Ti / Au, Zr / Al / Pt / Au, Zr / Al / Ni / Au, Zr / Al / Pd / Au > Zr / Al / Cr / Au > Zr / Al / Co / Au > TiNx / Ti / Au 'TiNx / Pt / Au' TiNx / Ni / Au-TiNx / Pd / Au > TiNx / Cr / Au 'TiNx / Co / Au ^ TiWNx / Ti / Au > TiWNx / Pt / Au, TiWNx / Ni / Au, TiWNx / Pd / Au, TiWNx / Cr / Au, TiWNx / Co / Au, NiAl / Pt / Au, NiAl / Cr / Au, NiAl / Ni / Au, NiAl / Ti / Au, Ti / NiAl / Pt / Au, Ti / NiAl / Ti / Au, Ti / NiAl / Ni / Au or Ti / NiAl / Cr / Au 〇11704twf. doc 10 200527706 The material of the second electrode 324 is, for example, Ni / Au, Ni / Pt, Ni / Pd, Ni / Co, Pd / Au, Pt / Au, Ti / Au, Cr / Au, Sn / Au, Ta / Au, TiN, TiWNx, or WSix. In addition, the material of the second electrode 224 is, for example, an N-type transparent conductive oxide layer or a P-type transparent conductive oxide layer. The N-type transparent conductive oxide layer is, for example, ΠΌ, CTO, ZnO: A, ZnGa204, Sn02: Sb. Ga203: Sn, AgIn02: Sn, or Iη203: Zη. In addition, the P-type transparent conductive oxide layer is, for example, CuA102, LaCuOS, NiO, QiGa02, or SrCu202. The material of the transparent protective layer 330 is, for example, A1F3, AIN, Al203, BaF2, BeO, Bi203, BiF3, CaF2, CdSe, CdS, CeF3, Ce02, Csl, DyF2, GdF3, Gd203, Hf02, HoF3, Ho203, LaF3, La203, LiF, MgF2, MgO, NaF, Na3AlF6, Na5Al3F14, Nb205, NdF3, Nd203, PbCl2, PbF2, PbO, Pr60u, Sb203, Sc203, Si3N4, SiO, Si203, Si02, SrF2, A1203, Substancel Substance2, SubstanceM1, SubstanceH4, Ta205, Ti02, TiN, T1C1, ThF4, Th02, V205, W03, YF3, Y203, YbF3, Yb203, ZnS, ZnSe, Zr02 o Figure 4 shows another preferred implementation according to the present invention Example schematic cross-section of a light-emitting diode. Referring to FIG. 4, the light-emitting diode device of this embodiment includes a semiconductor layer 410, a transparent conductive layer 428, a first electrode 426, a second electrode 424, and a transparent protective layer 430. The semiconductor layer 410 includes at least a first-type doped semiconductor layer 420, a second-type doped semiconductor layer 432, and a light-emitting layer 422. The light-emitting layer 422 is located on the first-type doped semiconductor layer 420 and the second-type doped semiconductor layer 420. The hetero semiconductor layer 432 is located on the light emitting layer 422, the transparent conductive layer 428 is located on the second type doped semiconductor layer 432, the first electrode 426 is electrically connected to the first type doped semiconductor layer 420, 11704twf.doc 11 200527706 The two electrodes 424 are located on a part of the transparent conductive layer 428 and the transparent protective layer 430 is located on the second electrode 424. The material of each component in the above light-emitting diode structure is: the material of the first electrode 426 is, for example, Ti / A, Ti / Al / Ti / Au, Ti / Al / Pt / Au, Ή / Al / Ni / Au, Ti / Al / Pd / Au, Ti / Al / Cr / Au, Ti / Al / Co / Au, Cr / Au, Cr / Pt / Au, Cr / Pd / Au, Cr / Ti / Au, Cr / TiWx / Au, Cr / Al / Cr / Au, Cr / Al / Pt / Au, Cr / Al / Pd / Au, Cr / Al / Ti / Au,
Cr/Al/Co/Au、Cr/Al/Ni/Au、Pd/Al/Ti/Au、Pd/Al/Pt/Au、Pd/Al/Ni/Au、 Pd/Al/Pd/Au、Pd/Al/Cr/Au、Pd/Al/Co/Au、Nd/Al/Pt/Au、Nd/Al/Ti/Au 'Cr / Al / Co / Au, Cr / Al / Ni / Au, Pd / Al / Ti / Au, Pd / Al / Pt / Au, Pd / Al / Ni / Au, Pd / Al / Pd / Au, Pd / Al / Cr / Au, Pd / Al / Co / Au, Nd / Al / Pt / Au, Nd / Al / Ti / Au ''
Nd/Al/Ni/Au、Nd/Al/Cr/Au、Nd/Al/Co/A、Hf/Al/Ti/Au、HfAl/Pt/Au、 H舰/Ni/Au、Hf/Al/Pd/Au、Hf/Al/Cr/Au、H丽Co/Au、Zr/Al/Ti/Au、Nd / Al / Ni / Au, Nd / Al / Cr / Au, Nd / Al / Co / A, Hf / Al / Ti / Au, HfAl / Pt / Au, H-ship / Ni / Au, Hf / Al / Pd / Au, Hf / Al / Cr / Au, HLi Co / Au, Zr / Al / Ti / Au,
Zr/Al/Pt/Au ^ Zr/Al/Ni/Au ' Zr/Al/Pd/Au > Zr/Al/Cr/Au ^ Zr/Al/Co/Au >Zr / Al / Pt / Au ^ Zr / Al / Ni / Au 'Zr / Al / Pd / Au > Zr / Al / Cr / Au ^ Zr / Al / Co / Au >
TiNxm/Au、TiNx/Pt/Au、TiN厕Au、T1NX/Pd/Au、TINx/Cr/Au、 TiNx/Co/Au ^ TiWNX/Ti/Au > TiWNX/Pt/Au' TiWNx/Ni/Au ^ TiWNx/Pd/Au ^ TiWNx/Cr/Au、TiWNx/Co/Au、NiAl/Pt/Au、NiAl/Cr/Au、NiAl/Ni/Au、 NiAl/Ti/Au、Ti/NiAl/Pt/Au、TVNiAl/Ti/Au、Ti/NiAl/Ni/Au 或是 Ti/NiAl/Cr/Au 〇 而第二電極 424 之材質例如是 Ni/Au、Ni/Pt、Ni/Pd、Ni/Co、Pd/Au、 Pt/Au、Ti/Au、Cr/Au、Sn/Au、Ta/Au、TiN、TiWNx 或是 WSix。第二 電極424之材質亦例如爲一 N型透明導電氧化層或是一 P型透明導電 氧化層。其中N型透明導電氧化層例如係ITO、CTO、ZnO:A卜 ZnGa204、Sii02:Sb、Ga203:Sn、AgIn02:Sn 或是 Ιη203:Ζη。而 P 型透明 導電氧化層例如爲 CuA102、LaCnOS、NiO、CxiGa〇2 或是 SrCu202 〇 且透明保護層430之材質例如係A1F3、AIN、Al2〇3、BaF2、 BeO、Bi203、BiF3、CaF2、CdSe、CdS、CeF3、Ce02、Csl、 11704twf.doc 12 200527706TiNxm / Au, TiNx / Pt / Au, TiN toilet Au, T1NX / Pd / Au, TINx / Cr / Au, TiNx / Co / Au ^ TiWNX / Ti / Au > TiWNX / Pt / Au 'TiWNx / Ni / Au ^ TiWNx / Pd / Au ^ TiWNx / Cr / Au, TiWNx / Co / Au, NiAl / Pt / Au, NiAl / Cr / Au, NiAl / Ni / Au, NiAl / Ti / Au, Ti / NiAl / Pt / Au , TVNiAl / Ti / Au, Ti / NiAl / Ni / Au or Ti / NiAl / Cr / Au 〇 and the material of the second electrode 424 is, for example, Ni / Au, Ni / Pt, Ni / Pd, Ni / Co, Pd / Au, Pt / Au, Ti / Au, Cr / Au, Sn / Au, Ta / Au, TiN, TiWNx, or WSix. The material of the second electrode 424 is, for example, an N-type transparent conductive oxide layer or a P-type transparent conductive oxide layer. The N-type transparent conductive oxide layer is, for example, ITO, CTO, ZnO: A, ZnGa204, Sii02: Sb, Ga203: Sn, AgIn02: Sn, or Ιη203: Zη. The P-type transparent conductive oxide layer is, for example, CuA102, LaCnOS, NiO, CxiGa〇2 or SrCu202, and the material of the transparent protective layer 430 is, for example, A1F3, AIN, Al2O3, BaF2, BeO, Bi203, BiF3, CaF2, CdSe. , CdS, CeF3, Ce02, Csl, 11704twf.doc 12 200527706
DyF2、GdF3、Gd203、Hf02、HoF3、Ho203、LaF3、La203、 LiF、MgF2、MgO、NaF、Na3AlF6、Na5Al3F14、Nb205、NdF3、 Nd203、PbCl2、PbF2、PbO、Pr6〇n、Sb203、Sc203、Si3N4、 SiO、Si203、Si02、SrF2、A1203、Substancel、Substance2、 SubstanceMl、SubstanceH4、Ta205、Ti02、TiN、T1C1、ThF4、 Th02、V205、W03、YF3、Y203、YbF3、Yb203、ZnS、ZnSe、 Zr02。 爲證實本發明之功效，請參考下列之第5圖，第5 圖繪示爲依照本發明一較佳實施例發光二極體與習知發光 二極體之發光亮度比率比較圖。其係根據前述較佳實施例 所製作的發光二極體與習知的發光二極體，以藍光二極 體，在攝氏80度C、50毫安培持續72小時做點亮測試時， 所獲得的發光亮度比率比較圖。由第5圖可知，本發明之 發光二極體在發光亮度比率上較習知的發光二極體足足增 加約9.24%的功效。 雖然本發明已以一較佳實施例揭露如上，然其並非 用以限定本發明，任何熟習此技藝者，在不脫離本發明之 精神和範圍內，當可作些許之更動與潤飾，因此本發明之 保護範圍當視後附之申請專利範圍所界定者爲準。 【圖式簡單說明】 第1圖繪示爲習知發光二極體之剖面示意圖。 第2圖繪示爲習知發光二極體之剖面示意圖。 第3圖繪示爲依照本發明一較佳實施例發光二極體 之剖面示意圖。 第4圖繪示爲依照本發明另一較佳實施例發光二極 11704twf.doc 13 200527706 體之剖面示意圖。 第5圖繪示爲依照本發明一較佳實施例發光二極體 與習知發光二極體之發光亮度比率比較圖。 【圖式標示說明】 100、300 :基材 112、312 :晶核層 114、314 :緩衝層 116、316 :第一束縛層 118、318 ' 222、422 :發光層 120、320 :第二束縛層 122、322 :接觸層 124、324、224、424 :第二電極 126、326、226、426 :第一電極 128、328、228、428 :透明導電層 130、330、430 :透明保護層 210、410 :半導體層 220、420 :第一型摻雜半導體層 232、432 :第二型摻雜半導體層 11704twf.doc 14DyF2, GdF3, Gd203, Hf02, HoF3, Ho203, LaF3, La203, LiF, MgF2, MgO, NaF, Na3AlF6, Na5Al3F14, Nb205, NdF3, Nd203, PbCl2, PbF2, PbO, Pr6On, SbN4, Sc203, Si203 SiO, Si203, SiO2, SrF2, A1203, Substancel, Substance2, SubstanceMl, SubstanceH4, Ta205, Ti02, TiN, T1C1, ThF4, Th02, V205, W03, YF3, Y203, YbF3, Yb203, ZnS, ZnSe, Zr02. In order to confirm the efficacy of the present invention, please refer to FIG. 5 below. FIG. 5 shows a comparison diagram of the luminous brightness ratio between the light emitting diode and the conventional light emitting diode according to a preferred embodiment of the present invention. It is based on the light-emitting diodes and conventional light-emitting diodes made according to the foregoing preferred embodiments. The blue-light diodes were used to perform a lighting test at 80 ° C and 50 mA for 72 hours. Comparison chart of luminous brightness ratio. It can be seen from Fig. 5 that the light-emitting diode of the present invention has a light-emitting brightness ratio that is substantially more effective than conventional light-emitting diodes by about 9.24%. Although the present invention has been disclosed as above with a preferred embodiment, it is not intended to limit the present invention. Any person skilled in the art can make some changes and retouch without departing from the spirit and scope of the present invention. The scope of protection of the invention shall be determined by the scope of the attached patent application. [Schematic description] Figure 1 shows a schematic cross-sectional view of a conventional light emitting diode. FIG. 2 is a schematic cross-sectional view of a conventional light-emitting diode. FIG. 3 is a schematic cross-sectional view of a light emitting diode according to a preferred embodiment of the present invention. FIG. 4 is a schematic cross-sectional view of a light emitting diode 11704twf.doc 13 200527706 according to another preferred embodiment of the present invention. Fig. 5 is a diagram showing a comparison of the light-emitting brightness ratio of a light-emitting diode and a conventional light-emitting diode according to a preferred embodiment of the present invention. [Schematic description] 100, 300: Substrate 112, 312: Crystal nucleus layer 114, 314: Buffer layer 116, 316: First binding layer 118, 318 '222, 422: Luminous layer 120, 320: Second binding Layers 122, 322: contact layers 124, 324, 224, 424: second electrodes 126, 326, 226, 426: first electrodes 128, 328, 228, 428: transparent conductive layers 130, 330, 430: transparent protective layer 210 , 410: semiconductor layer 220, 420: first type doped semiconductor layer 232, 432: second type doped semiconductor layer 11704twf.doc 14
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103985802A (en) * | 2013-02-08 | 2014-08-13 | 晶元光电股份有限公司 | Light emitting diode and manufacturing method thereof |
| TWI584493B (en) * | 2013-02-04 | 2017-05-21 | 晶元光電股份有限公司 | Light-emitting diode and the manufactor method of the same |
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2004
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI584493B (en) * | 2013-02-04 | 2017-05-21 | 晶元光電股份有限公司 | Light-emitting diode and the manufactor method of the same |
| CN103985802A (en) * | 2013-02-08 | 2014-08-13 | 晶元光电股份有限公司 | Light emitting diode and manufacturing method thereof |
| CN103985802B (en) * | 2013-02-08 | 2018-05-15 | 晶元光电股份有限公司 | Light emitting diode and preparation method thereof |
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